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Journal Articles

Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability

A. Ruiz, N. Seoane, S. Claramunt, A. García-Loureiro, M. Porti, C. Couso, J. Martin-Martinez, M. Nafria
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 093502 (2019)
https://doi.org/10.1063/1.5090855
Published: March 2019
View articletitled, Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
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Journal Articles

Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation

M. Lanza, Y. Wang, A. Bayerl, T. Gao, M. Porti, M. Nafria, H. Liang, G. Jing, Z. Liu, Y. Zhang, Y. Tong, H. Duan
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 104301 (2013)
https://doi.org/10.1063/1.4794521
Published: March 2013
View articletitled, Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation
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Journal Articles

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

M. Lanza, G. Bersuker, M. Porti, E. Miranda, M. Nafría, X. Aymerich
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 193502 (2012)
https://doi.org/10.1063/1.4765342
Published: November 2012
View articletitled, Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
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Journal Articles

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, M. Nafría
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 093505 (2012)
https://doi.org/10.1063/1.4748115
Published: August 2012
View articletitled, Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale
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Journal Articles

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

M. Lanza, K. Zhang, M. Porti, M. Nafría, Z. Y. Shen, L. F. Liu, J. F. Kang, D. Gilmer, G. Bersuker
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 123508 (2012)
https://doi.org/10.1063/1.3697648
Published: March 2012
View articletitled, Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures
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Journal Articles

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker, D. C. Gilmer, D. Veksler, P. Kirsch, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, M. Nafría
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 124518 (2011)
https://doi.org/10.1063/1.3671565
Published: December 2011
View articletitled, Metal oxide resistive memory switching mechanism based on conductive filament properties
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Journal Articles

Publisher’s Note: “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]

V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, Z. Y. Shen, G. Bersuker
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 239901 (2011)
https://doi.org/10.1063/1.3666227
Published: December 2011
View articletitled, Publisher’s Note: “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]
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Journal Articles

Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon, M. R. Jennings, M. Porti, A. Bayerl, M. Lanza, M. Nafría
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 213504 (2011)
https://doi.org/10.1063/1.3661167
Published: November 2011
View articletitled, Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
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Journal Articles

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, Z. Y. Shen, G. Bersuker
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 103510 (2011)
https://doi.org/10.1063/1.3637633
Published: September 2011
View articletitled, Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress
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Journal Articles

Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy

V. Iglesias, M. Porti, M. Nafría, X. Aymerich, P. Dudek, G. Bersuker
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01AB02 (2011)
https://doi.org/10.1116/1.3532945
Published: January 2011
View articletitled, Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy
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Journal Articles

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

V. Iglesias, M. Porti, M. Nafría, X. Aymerich, P. Dudek, T. Schroeder, G. Bersuker
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 262906 (2010)
https://doi.org/10.1063/1.3533257
Published: December 2010
View articletitled, Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures
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Journal Articles

Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker, B. Hamilton
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 81, 106110 (2010)
https://doi.org/10.1063/1.3491956
Published: October 2010
View articletitled, Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces
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Journal Articles

Implanted and irradiated Si O 2 ∕ Si structure electrical properties at the nanoscale

M. Porti, N. Nafria, S. Gerardin, X. Aymerich, A. Cester, A. Paccagnella, G. Ghidini
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 421–425 (2009)
https://doi.org/10.1116/1.3043475
Published: February 2009
View articletitled, Implanted and irradiated Si O 2 ∕ Si structure electrical properties at the nanoscale
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Journal Articles

Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high- k capacitors

W. Polspoel, W. Vandervorst, L. Aguilera, M. Porti, M. Nafria, X. Aymerich
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 356–359 (2009)
https://doi.org/10.1116/1.3071845
Published: February 2009
View articletitled, Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high- k capacitors
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Journal Articles

Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability

L. Aguilera, M. Lanza, A. Bayerl, M. Porti, M. Nafria, X. Aymerich
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 360–363 (2009)
https://doi.org/10.1116/1.3021049
Published: February 2009
View articletitled, Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability
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Journal Articles

Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

L. Aguilera, W. Polspoel, A. Volodin, C. Van Haesendonck, M. Porti, W. Vandervorst, M. Nafria, X. Aymerich
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1445–1449 (2008)
https://doi.org/10.1116/1.2958246
Published: August 2008
View articletitled, Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics
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Journal Articles

Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter

L. Aguilera, M. Lanza, M. Porti, J. Grifoll, M. Nafría, X. Aymerich
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 79, 073701 (2008)
https://doi.org/10.1063/1.2952058
Published: July 2008
View articletitled, Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter
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Journal Articles

Nanoscale electrical characterization of Si-nc based memory metal-oxide-semiconductor devices

M. Porti, M. Avidano, M. Nafría, X. Aymerich, J. Carreras, O. Jambois, B. Garrido
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 064509 (2007)
https://doi.org/10.1063/1.2433749
Published: March 2007
View articletitled, Nanoscale electrical characterization of Si-nc based memory metal-oxide-semiconductor devices
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Journal Articles

Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

M. Porti, M. Avidano, M. Nafría, X. Aymerich, J. Carreras, B. Garrido
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 056101 (2005)
https://doi.org/10.1063/1.2010626
Published: September 2005
View articletitled, Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy
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Journal Articles

Breakdown-induced negative charge in ultrathin SiO 2 films measured by atomic force microscopy

M. Porti, M. Nafrı́a, M. C. Blüm, X. Aymerich, S. Sadewasser
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 3615–3617 (2002)
https://doi.org/10.1063/1.1519357
Published: November 2002
View articletitled, Breakdown-induced negative charge in ultrathin SiO 2 films measured by atomic force microscopy
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