Page 1 | Search Results | AIP Publishing

1-20 of 30

Sort by

Sort Order Select

Journal Articles

Augmenting machine learning of Grad–Shafranov equilibrium reconstruction with Green's functions

J. McClenaghan, C. Akçay, T. B. Amara, X. Sun, S. Madireddy, L. L. Lao, S. E. Kruger, O. M. Meneghini

Phys. Plasmas 31, 082507 (2024)

https://doi.org/10.1063/5.0213625

Published: August 2024

View article titled, Augmenting machine learning of Grad–Shafranov equilibrium reconstruction with Green's functions

Journal Articles

Elevating zero dimensional global scaling predictions to self-consistent theory-based simulations

T. Slendebroek, J. McClenaghan, O. M. Meneghini, B. C. Lyons, S. P. Smith, T. F. Neiser, N. Shi, J. Candy

Phys. Plasmas 30, 072511 (2023)

https://doi.org/10.1063/5.0148886

Published: July 2023

View article titled, Elevating zero dimensional global scaling predictions to self-consistent theory-based simulations

Journal Articles

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

F. Piva, M. Pilati, M. Buffolo, N. Roccato, N. Susilo, D. Hauer Vidal, A. Muhin, L. Sulmoni, T. Wernicke, M. Kneissl, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini

Appl. Phys. Lett. 122, 181102 (2023)

https://doi.org/10.1063/5.0144783

Published: May 2023

View article titled, Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

Journal Articles

Transition from ITG to MTM linear instabilities near pedestals of high density plasmas

J. McClenaghan, T. Slendebroek, G. M. Staebler, S. P. Smith, O. M. Meneghini, B. A. Grierson, K. E. Thome, G. Avdeeva, L. L. Lao, J. Candy, W. Guttenfelder

Phys. Plasmas 30, 042512 (2023)

https://doi.org/10.1063/5.0141179

Published: April 2023

View article titled, Transition from ITG to MTM linear instabilities near pedestals of high density plasmas

Journal Articles

Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs

F. Piva, M. Grigoletto, R. Brescancin, C. De Santi, M. Buffolo, J. Ruschel, J. Glaab, D. Hauer Vidal, M. Guttmann, J. Rass, S. Einfeldt, N. Susilo, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni, M. Meneghini

Appl. Phys. Lett. 122, 151108 (2023)

https://doi.org/10.1063/5.0142054

Published: April 2023

View article titled, Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs

Journal Articles

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

K. Mukherjee, C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, B. Bakeroot, P. Diehle, F. Altmann, G. Meneghesso, E. Zanoni, M. Meneghini

Appl. Phys. Lett. 120, 143501 (2022)

https://doi.org/10.1063/5.0087245

Published: April 2022

View article titled, Study and characterization of GaN MOS capacitors: Planar vs trench topographies

Includes: Supplementary data

Journal Articles

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

F. Masin, C. De Santi, J. Lettens, J. Franchi, M. Domeij, P. Moens, M. Meneghini, G. Meneghesso, E. Zanoni

J. Appl. Phys. 130, 145702 (2021)

https://doi.org/10.1063/5.0057285

Published: October 2021

View article titled, Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

Includes: Supplementary data

Journal Articles

Carrier capture kinetics, deep levels, and isolation properties of β -Ga₂O₃ Schottky-barrier diodes damaged by nitrogen implantation

C. De Santi, M. Fregolent, M. Buffolo, M. H. Wong, M. Higashiwaki, G. Meneghesso, E. Zanoni, M. Meneghini

Appl. Phys. Lett. 117, 262108 (2020)

https://doi.org/10.1063/5.0029295

Published: December 2020

View article titled, Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

Journal Articles

Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

N. Renso, C. De Santi, A. Caria, F. Dalla Torre, L. Zecchin, G. Meneghesso, E. Zanoni, M. Meneghini

J. Appl. Phys. 127, 185701 (2020)

https://doi.org/10.1063/1.5135633

Published: May 2020

View article titled, Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

Journal Articles

Vertical breakdown of GaN on Si due to V-pits

S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. A. Freitas, Jr., J. Derluyn, F. Medjdoub, G. Meneghesso, J. Friedrich, T. Erlbacher

J. Appl. Phys. 127, 015701 (2020)

https://doi.org/10.1063/1.5129248

Published: January 2020

View article titled, Vertical breakdown of GaN on Si due to V-pits

Journal Articles

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

F. Masin, M. Meneghini, E. Canato, C. De Santi, A. Stockman, E. Zanoni, P. Moens, G. Meneghesso

Appl. Phys. Lett. 115, 052103 (2019)

https://doi.org/10.1063/1.5109301

Published: July 2019

View article titled, Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

Journal Articles

On trapping mechanisms at oxide-traps in Al₂O₃/GaN metal-oxide-semiconductor capacitors

D. Bisi, S. H. Chan, X. Liu, R. Yeluri, S. Keller, M. Meneghini, G. Meneghesso, E. Zanoni, U. K. Mishra

Appl. Phys. Lett. 108, 112104 (2016)

https://doi.org/10.1063/1.4944466

Published: March 2016

View article titled, On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Journal Articles

Role of defects in the thermal droop of InGaN-based light emitting diodes

C. De Santi, M. Meneghini, M. La Grassa, B. Galler, R. Zeisel, M. Goano, S. Dominici, M. Mandurrino, F. Bertazzi, D. Robidas, G. Meneghesso, E. Zanoni

J. Appl. Phys. 119, 094501 (2016)

https://doi.org/10.1063/1.4942438

Published: March 2016

View article titled, Role of defects in the thermal droop of InGaN-based light emitting diodes

Journal Articles

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

M. Musolino, D. van Treeck, A. Tahraoui, L. Scarparo, C. De Santi, M. Meneghini, E. Zanoni, L. Geelhaar, H. Riechert

J. Appl. Phys. 119, 044502 (2016)

https://doi.org/10.1063/1.4940949

Published: January 2016

View article titled, A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Journal Articles

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

C. De Santi, M. Meneghini, N. Trivellin, S. Gerardin, M. Bagatin, A. Paccagnella, G. Meneghesso, E. Zanoni

Appl. Phys. Lett. 105, 213506 (2014)

https://doi.org/10.1063/1.4902870

Published: November 2014

View article titled, Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Journal Articles

Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

C. de Santi, M. Meneghini, H. Ishida, T. Ueda, G. Meneghesso, E. Zanoni

Appl. Phys. Lett. 105, 073507 (2014)

https://doi.org/10.1063/1.4893607

Published: August 2014

View article titled, Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

Journal Articles

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

M. Meneghini, D. Bisi, D. Marcon, S. Stoffels, M. Van Hove, T.-L. Wu, S. Decoutere, G. Meneghesso, E. Zanoni

Appl. Phys. Lett. 104, 143505 (2014)

https://doi.org/10.1063/1.4869680

Published: April 2014

View article titled, Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Journal Articles

Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

M. Meneghini, M. la Grassa, S. Vaccari, B. Galler, R. Zeisel, P. Drechsel, B. Hahn, G. Meneghesso, E. Zanoni

Appl. Phys. Lett. 104, 113505 (2014)

https://doi.org/10.1063/1.4868719

Published: March 2014

View article titled, Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

Journal Articles

Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

A. Vinattieri, F. Batignani, F. Bogani, M. Meneghini, G. Meneghesso, E. Zanoni, D. Zhu, C. J. Humphreys

AIP Conf. Proc. 1583, 282–286 (2014)

https://doi.org/10.1063/1.4865653

Published: February 2014

View article titled, Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

Journal Articles

Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

M. Meneghini, S. Carraro, G. Meneghesso, N. Trivellin, G. Mura, F. Rossi, G. Salviati, K. Holc, T. Weig, L. Schade, M. A. Karunakaran, J. Wagner, U. T. Schwarz, E. Zanoni

Appl. Phys. Lett. 103, 233506 (2013)

https://doi.org/10.1063/1.4834697

Published: December 2013

View article titled, Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

NARROW

Topics

Augmenting machine learning of Grad–Shafranov equilibrium reconstruction with Green's functions

Elevating zero dimensional global scaling predictions to self-consistent theory-based simulations

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

Transition from ITG to MTM linear instabilities near pedestals of high density plasmas

Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

Carrier capture kinetics, deep levels, and isolation properties of β -Ga₂O₃ Schottky-barrier diodes damaged by nitrogen implantation

Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

Vertical breakdown of GaN on Si due to V-pits

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

On trapping mechanisms at oxide-traps in Al₂O₃/GaN metal-oxide-semiconductor capacitors

Role of defects in the thermal droop of InGaN-based light emitting diodes

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only