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Journal Articles

Interfacial energy barrier height of Al₂O₃/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy

A. Maréchal, Y. Kato, M. Liao, S. Koizumi

Appl. Phys. Lett. 111, 141605 (2017)

https://doi.org/10.1063/1.5001070

Published: October 2017

View articletitled, Interfacial energy barrier height of Al2O3/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy

Journal Articles

Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO₂ crystal film

G. M. Liao, S. Chen, L. L. Fan, Y. L. Chen, X. Q. Wang, H. Ren, Z. M. Zhang, C. W. Zou

AIP Advances 6, 045014 (2016)

https://doi.org/10.1063/1.4948311

Published: April 2016

View articletitled, Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO2 crystal film

Includes: Supplementary data

Journal Articles

Epitaxial growth of high mobility Bi 2 Se 3 thin films on CdS

X. F. Kou, L. He, F. X. Xiu, M. R. Lang, Z. M. Liao, Y. Wang, A. V. Fedorov, X. X. Yu, J. S. Tang, G. Huang, X. W. Jiang, J. F. Zhu, J. Zou, K. L. Wang

Appl. Phys. Lett. 98, 242102 (2011)

https://doi.org/10.1063/1.3599540

Published: June 2011

View articletitled, Epitaxial growth of high mobility Bi 2 Se 3 thin films on CdS

Journal Articles

Effect of initial stress/strain state on formation of (001) preferred orientation in L1_{FePt thin films}

J. K. Mei, F. T. Yuan, W. M. Liao, Y. D. Yao, H. M. Lin, H. Y. Lee, J. H. Hsu

J. Appl. Phys. 109, 07A737 (2011)

https://doi.org/10.1063/1.3564950

Published: April 2011

View articletitled, Effect of initial stress/strain state on formation of (001) preferred orientation in L1 FePt thin films

Journal Articles

Low temperature growth of FePt and CoPt films on MgO(111) substrate

Fu-Te Yuan, A. C. Sun, Jui-Kuo Mei, W. M. Liao, Jen-Hwa Hsu, H. Y. Lee

J. Appl. Phys. 109, 07B743 (2011)

https://doi.org/10.1063/1.3560046

Published: April 2011

View articletitled, Low temperature growth of FePt and CoPt films on MgO(111) substrate

Journal Articles

Coercivity enhancement in L1₁ Co_50-xCu_xPt₅₀ thin films

Fu-Te Yuan, An-Cheng Sun, Jen-Hwa Hsu, C. S. Tan, P. C. Kuo, W. M. Liao, H. Y. Lee

J. Appl. Phys. 109, 07B714 (2011)

https://doi.org/10.1063/1.3545821

Published: March 2011

View articletitled, Coercivity enhancement in L11 Co50-xCuxPt50 thin films

Journal Articles

Enhancement of perpendicular coercivity in L 1 1 CoPt thin films by replacement of Co with Cu

Fu-Te Yuan, An-Cheng Sun, Jen-Hwa Hsu, C. S. Tan, P. C. Kuo, W. M. Liao, H. Y. Lee

J. Appl. Phys. 108, 113909 (2010)

https://doi.org/10.1063/1.3520662

Published: December 2010

View articletitled, Enhancement of perpendicular coercivity in L 1 1 CoPt thin films by replacement of Co with Cu

Journal Articles

Three-dimensional modeling of transport phenomena and their effect on the formation of ripples in gas metal arc welding

Z. H. Rao, J. Zhou, S. M. Liao, H. L. Tsai

J. Appl. Phys. 107, 054905 (2010)

https://doi.org/10.1063/1.3326163

Published: March 2010

View articletitled, Three-dimensional modeling of transport phenomena and their effect on the formation of ripples in gas metal arc welding

Journal Articles

Effects of shielding gas compositions on arc plasma and metal transfer in gas metal arc welding

Z. H. Rao, S. M. Liao, H. L. Tsai

J. Appl. Phys. 107, 044902 (2010)

https://doi.org/10.1063/1.3291121

Published: February 2010

View articletitled, Effects of shielding gas compositions on arc plasma and metal transfer in gas metal arc welding

Journal Articles

Structure and electrical properties of Bi 3.15 Nd 0.85 Ti 3 O 12 nanofibers synthesized by electrospinning and sol-gel method

M. Liao, X. L. Zhong, J. B. Wang, S. H. Xie, Y. C. Zhou

Appl. Phys. Lett. 96, 012904 (2010)

https://doi.org/10.1063/1.3276688

Published: January 2010

View articletitled, Structure and electrical properties of Bi 3.15 Nd 0.85 Ti 3 O 12 nanofibers synthesized by electrospinning and sol-gel method

Includes: Supplementary data

Journal Articles

A new soft x-ray pulse height analysis array in the HL-2A tokamak

Y. P. Zhang, Yi Liu, J. W. Yang, X. Y. Song, M. Liao, X. Li, G. L. Yuan, Q. W. Yang, X. R. Duan, C. H. Pan

Rev. Sci. Instrum. 80, 126104 (2009)

https://doi.org/10.1063/1.3263910

Published: December 2009

View articletitled, A new soft x-ray pulse height analysis array in the HL-2A tokamak

Journal Articles

Effect of bombardment with different ions (H, He, Ar) on ordering transformation of Fe 48 Pt 52 films

A. C. Sun, F. T. Yuan, Jen-Hwa Hsu, W. M. Liao, H. Y. Lee

J. Appl. Phys. 105, 07B719 (2009)

https://doi.org/10.1063/1.3072751

Published: March 2009

View articletitled, Effect of bombardment with different ions (H, He, Ar) on ordering transformation of Fe 48 Pt 52 films

Journal Articles

Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors

Jingfeng Yang, Jiaqi Yang, Baoguang Yan, Gang Du, Xiaoyan Liu, Ruqi Han, Jinfeng Kang, C. C. Liao, Z. H. Gan, M. Liao, J. P. Wang, W. Wong

Appl. Phys. Lett. 94, 082103 (2009)

https://doi.org/10.1063/1.3079406

Published: February 2009

View articletitled, Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors

Journal Articles

Highly ordered arrays of macroscopically long Pb nanobelts with atomic-level controlled thickness and width on Si

Z. L. Guan, R. Wu, Y. X. Ning, C. L. Song, L. Tang, D. Hao, Xu-Cun Ma, J. F. Jia, X. Chen, Q. K. Xue, Z. M. Liao, D. P. Yu

Appl. Phys. Lett. 93, 023115 (2008)

https://doi.org/10.1063/1.2955823

Published: July 2008

View articletitled, Highly ordered arrays of macroscopically long Pb nanobelts with atomic-level controlled thickness and width on Si

Journal Articles

Preannealing effect on ordering transformation and magnetic properties of CoPt thin films

F. T. Yuan, H. W. Chang, W. M. Liao, S. N. Hsiao, S. K. Chen, Y. D. Yao, H. Y. Lee

J. Appl. Phys. 101, 09K526 (2007)

https://doi.org/10.1063/1.2712531

Published: May 2007

View articletitled, Preannealing effect on ordering transformation and magnetic properties of CoPt thin films

Journal Articles

Multiferroic nanoparticulate Bi 3.15 Nd 0.85 Ti 3 O 12 – Co Fe 2 O 4 composite thin films prepared by a chemical solution deposition technique

X. L. Zhong, J. B. Wang, M. Liao, G. J. Huang, S. H. Xie, Y. C. Zhou, Y. Qiao, J. P. He

Appl. Phys. Lett. 90, 152903 (2007)

https://doi.org/10.1063/1.2709946

Published: April 2007

View articletitled, Multiferroic nanoparticulate Bi 3.15 Nd 0.85 Ti 3 O 12 – Co Fe 2 O 4 composite thin films prepared by a chemical solution deposition technique

Journal Articles

Ferroelectric and dielectric properties of Nd 3 + ∕ Zr 4 + cosubstituted Bi 4 Ti 3 O 12 thin films

X. L. Zhong, J. B. Wang, M. Liao, L. Z. Sun, H. B. Shu, C. B. Tan, Y. C. Zhou

Appl. Phys. Lett. 90, 102906 (2007)

https://doi.org/10.1063/1.2711415

Published: March 2007

View articletitled, Ferroelectric and dielectric properties of Nd 3 + ∕ Zr 4 + cosubstituted Bi 4 Ti 3 O 12 thin films

Journal Articles

Poststress recovery mechanism of the negative bias temperature instability based on dispersive transport

Jingfeng Yang, Baoguang Yan, Xiaoyan Liu, Ruqi Han, Jinfeng Kang, C. C. Liao, Z. H. Gan, M. Liao, J. P. Wang, W. Wong

Appl. Phys. Lett. 90, 082908 (2007)

https://doi.org/10.1063/1.2696959

Published: February 2007

View articletitled, Poststress recovery mechanism of the negative bias temperature instability based on dispersive transport

Journal Articles

Study of tunneling currents through germanium quantum-dot single-hole and -electron transistors

P. W. Li, David M. T. Kuo, W. M. Liao, W. T. Lai

Appl. Phys. Lett. 88, 213117 (2006)

https://doi.org/10.1063/1.2207494

Published: May 2006

View articletitled, Study of tunneling currents through germanium quantum-dot single-hole and -electron transistors

Journal Articles

Room-temperature transient carrier transport in germanium single-hole/electron transistors

W. M. Liao, P. W. Li, David M. T. Kuo, W. T. Lai

Appl. Phys. Lett. 88, 182109 (2006)

https://doi.org/10.1063/1.2200765

Published: May 2006

View articletitled, Room-temperature transient carrier transport in germanium single-hole/electron transistors

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Interfacial energy barrier height of Al₂O₃/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy

Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO₂ crystal film

Epitaxial growth of high mobility Bi 2 Se 3 thin films on CdS

Effect of initial stress/strain state on formation of (001) preferred orientation in L1_{FePt thin films}

Low temperature growth of FePt and CoPt films on MgO(111) substrate

Coercivity enhancement in L1₁ Co_50-xCu_xPt₅₀ thin films

Enhancement of perpendicular coercivity in L 1 1 CoPt thin films by replacement of Co with Cu

Three-dimensional modeling of transport phenomena and their effect on the formation of ripples in gas metal arc welding

Effects of shielding gas compositions on arc plasma and metal transfer in gas metal arc welding

Structure and electrical properties of Bi 3.15 Nd 0.85 Ti 3 O 12 nanofibers synthesized by electrospinning and sol-gel method

A new soft x-ray pulse height analysis array in the HL-2A tokamak

Effect of bombardment with different ions (H, He, Ar) on ordering transformation of Fe 48 Pt 52 films

Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors

Highly ordered arrays of macroscopically long Pb nanobelts with atomic-level controlled thickness and width on Si

Preannealing effect on ordering transformation and magnetic properties of CoPt thin films

Multiferroic nanoparticulate Bi 3.15 Nd 0.85 Ti 3 O 12 – Co Fe 2 O 4 composite thin films prepared by a chemical solution deposition technique

Ferroelectric and dielectric properties of Nd 3 + ∕ Zr 4 + cosubstituted Bi 4 Ti 3 O 12 thin films

Poststress recovery mechanism of the negative bias temperature instability based on dispersive transport

Study of tunneling currents through germanium quantum-dot single-hole and -electron transistors

Room-temperature transient carrier transport in germanium single-hole/electron transistors

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