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M. L. Nakarmi
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Journal Articles

Investigation of the origin of atomic-like emission at 4.09 eV from h-BN by correlating PL and XPS spectra

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N. Maharjan, P. Joshi, E. Janzen, J. H. Edgar, M. L. Nakarmi
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 261102 (2024)
https://doi.org/10.1063/5.0243547
Published: December 2024
View articletitled, Investigation of the origin of atomic-like emission at 4.09 eV from h-BN by correlating PL and XPS spectra
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Journal Articles

Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state

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Y. Chen, N. Maharjan, Z. Liu, M. L. Nakarmi, V. V. Chaldyshev, E. V. Kundelev, A. N. Poddubny, A. P. Vasil'ev, M. A. Yagovkina, N. M. Shakya
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 103101 (2017)
https://doi.org/10.1063/1.4978252
Published: March 2017
View articletitled, Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state
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Journal Articles

Signature of structural distortion in optical spectra of YFe2O4 thin film

Open Access
R. C. Rai, J. Hinz, G. X. A. Petronilo, F. Sun, H. Zeng, M. L. Nakarmi, P. R. Niraula
Journal: AIP Advances
AIP Advances 6, 025021 (2016)
https://doi.org/10.1063/1.4942753
Published: February 2016
View articletitled, Signature of structural distortion in optical spectra of YFe2O4 thin film
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Journal Articles

Elevated temperature dependent transport properties of phosphorus and arsenic doped zinc oxide thin films

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B. Cai, M. L. Nakarmi, T. N. Oder, M. McMaster, N. Velpukonda, A. Smith
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 223709 (2013)
https://doi.org/10.1063/1.4845855
Published: December 2013
View articletitled, Elevated temperature dependent transport properties of phosphorus and arsenic doped zinc oxide thin films
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Journal Articles

Spin-charge-orbital coupling in multiferroic LuFe2O4 thin films

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R. C. Rai, A. Delmont, A. Sprow, B. Cai, M. L. Nakarmi
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 212904 (2012)
https://doi.org/10.1063/1.4720401
Published: May 2012
View articletitled, Spin-charge-orbital coupling in multiferroic LuFe2O4 thin films
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Journal Articles

Elevated temperature dependence of energy band gap of ZnO thin films grown by e-beam deposition

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R. C. Rai, M. Guminiak, S. Wilser, B. Cai, M. L. Nakarmi
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 073511 (2012)
https://doi.org/10.1063/1.3699365
Published: April 2012
View articletitled, Elevated temperature dependence of energy band gap of ZnO thin films grown by e-beam deposition
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Journal Articles

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys

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M. L. Nakarmi, N. Nepal, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 091903 (2009)
https://doi.org/10.1063/1.3094754
Published: March 2009
View articletitled, Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
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Journal Articles

Photoluminescence properties of AlN homoepilayers with different orientations

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A. Sedhain, N. Nepal, M. L. Nakarmi, T. M. Al tahtamouni, J. Y. Lin, H. X. Jiang, Z. Gu, J. H. Edgar
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 041905 (2008)
https://doi.org/10.1063/1.2965613
Published: July 2008
View articletitled, Photoluminescence properties of AlN homoepilayers with different orientations
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Journal Articles

Correlation between biaxial stress and free exciton transition in AlN epilayers

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B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 121117 (2007)
https://doi.org/10.1063/1.2789182
Published: September 2007
View articletitled, Correlation between biaxial stress and free exciton transition in AlN epilayers
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Journal Articles

Correlation between optoelectronic and structural properties and epilayer thickness of AlN

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B. N. Pantha, R. Dahal, M. L. Nakarmi, N. Nepal, J. Li, J. Y. Lin, H. X. Jiang, Q. S. Paduano, David Weyburne
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 241101 (2007)
https://doi.org/10.1063/1.2747662
Published: June 2007
View articletitled, Correlation between optoelectronic and structural properties and epilayer thickness of AlN
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Journal Articles

200 nm deep ultraviolet photodetectors based on AlN

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J. Li, Z. Y. Fan, R. Dahal, M. L Nakarmi, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 213510 (2006)
https://doi.org/10.1063/1.2397021
Published: November 2006
View articletitled, 200 nm deep ultraviolet photodetectors based on AlN
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Journal Articles

Growth and photoluminescence studies of Zn-doped AlN epilayers

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N. Nepal, M. L. Nakarmi, H. U. Jang, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 192111 (2006)
https://doi.org/10.1063/1.2387869
Published: November 2006
View articletitled, Growth and photoluminescence studies of Zn-doped AlN epilayers
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Journal Articles

Correlation between optical and electrical properties of Mg-doped AlN epilayers

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M. L. Nakarmi, N. Nepal, C. Ugolini, T. M. Altahtamouni, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 152120 (2006)
https://doi.org/10.1063/1.2362582
Published: October 2006
View articletitled, Correlation between optical and electrical properties of Mg-doped AlN epilayers
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Journal Articles

Photoluminescence studies of impurity transitions in AlGaN alloys

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N. Nepal, M. L. Nakarmi, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 092107 (2006)
https://doi.org/10.1063/1.2337856
Published: August 2006
View articletitled, Photoluminescence studies of impurity transitions in AlGaN alloys
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Journal Articles

Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy

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N. Nepal, K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 261919 (2006)
https://doi.org/10.1063/1.2217160
Published: June 2006
View articletitled, Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy
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Journal Articles

Deep ultraviolet photoluminescence studies of AlN photonic crystals

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N. Nepal, J. Shakya, M. L. Nakarmi, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 133113 (2006)
https://doi.org/10.1063/1.2190452
Published: March 2006
View articletitled, Deep ultraviolet photoluminescence studies of AlN photonic crystals
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Journal Articles

Al Ga N ∕ Ga N ∕ Al N quantum-well field-effect transistors with highly resistive AlN epilayers

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Z. Y. Fan, J. Li, M. L. Nakarmi, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 073513 (2006)
https://doi.org/10.1063/1.2174847
Published: February 2006
View articletitled, Al Ga N ∕ Ga N ∕ Al N quantum-well field-effect transistors with highly resistive AlN epilayers
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Journal Articles

Exciton localization in AlGaN alloys

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N. Nepal, J. Li, M. L. Nakarmi, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 062103 (2006)
https://doi.org/10.1063/1.2172728
Published: February 2006
View articletitled, Exciton localization in AlGaN alloys
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Journal Articles

Temperature and compositional dependence of the energy band gap of AlGaN alloys

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N. Nepal, J. Li, M. L. Nakarmi, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 242104 (2005)
https://doi.org/10.1063/1.2142333
Published: December 2005
View articletitled, Temperature and compositional dependence of the energy band gap of AlGaN alloys
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Journal Articles

Optical Reflectance of Bulk AlN Crystals and AlN Epitaxial Films

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L. Chen, B. J. Skromme, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, Z. J. Reitmeyer, R. F. Davis, R. F. Dalmau, R. Schlesser, Z. Sitar
Journal: AIP Conference Proceedings
AIP Conf. Proc. 772, 297–298 (2005)
https://doi.org/10.1063/1.1994108
Published: June 2005
View articletitled, Optical Reflectance of Bulk AlN Crystals and AlN Epitaxial Films
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