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M. L. Lee
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Journal Articles

Optical constants of polycrystalline Al0.25Ga0.75P and Al0.9Ga0.1As determined by variable-angle spectroscopic ellipsometry

D. Quispe, B. Eng, M. Kim, A. L. Onno, B. J. Coppa, Z. J. Yu, M. L. Lee, Z. C. Holman
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 073104 (2023)
https://doi.org/10.1063/5.0155214
Published: August 2023
View article titled, Optical constants of polycrystalline Al<sub>0.25</sub>Ga<sub>0.75</sub>P and Al<sub>0.9</sub>Ga<sub>0.1</sub>As determined by variable-angle spectroscopic ellipsometry
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Includes: Supplementary data
Journal Articles

8.1 μ m-emitting InP-based quantum cascade laser grown on Si by metalorganic chemical vapor deposition

S. Xu, S. Zhang, J. D. Kirch, H. Gao, Y. Wang, M. L. Lee, S. R. Tatavarti, D. Botez, L. J. Mawst
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 031110 (2023)
https://doi.org/10.1063/5.0155202
Published: July 2023
View article titled, 8.1 <em>μ</em> m-emitting InP-based quantum cascade laser grown on Si by metalorganic chemical vapor deposition
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Journal Articles

∼8.5 μm-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition

S. Xu, S. Zhang, J. D. Kirch, S. Suri, N. Pokharel, H. Gao, H. Kim, P. Dhingra, M. L. Lee, D. Botez, L. J. Mawst
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 171103 (2022)
https://doi.org/10.1063/5.0122272
Published: October 2022
View article titled, ∼8.5 <em>μ</em>m-emitting InP-based quantum cascade lasers grown on GaAs by metal-organic chemical vapor deposition
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Includes: Supplementary data
Journal Articles

Graded buffer Bragg reflectors with high reflectivity and transparency for metamorphic optoelectronics

R. M. France, J. Buencuerpo, M. Bradsby, J. F. Geisz, Y. Sun, P. Dhingra, M. L. Lee, M. A. Steiner
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 173102 (2021)
https://doi.org/10.1063/5.0050588
Published: May 2021
View article titled, Graded buffer Bragg reflectors with high reflectivity and transparency for metamorphic optoelectronics
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Journal Articles

Toward deterministic construction of low noise avalanche photodetector materials

A. K. Rockwell, M. Ren, M. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S. J. Maddox, M. L. Lee, A. W. Ghosh, J. C. Campbell, S. R. Bank
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 102106 (2018)
https://doi.org/10.1063/1.5040592
Published: September 2018
View article titled, Toward deterministic construction of low noise avalanche photodetector materials
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Includes: Supplementary data
Journal Articles

Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation

R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, S. R. Bank
Journal: APL Materials
APL Mater. 5, 096106 (2017)
https://doi.org/10.1063/1.4991589
Published: September 2017
View article titled, Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation
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Journal Articles

High-efficiency AlGaInP solar cells grown by molecular beam epitaxy

J. Faucher, Y. Sun, D. Jung, D. Martin, T. Masuda, M. L. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 172105 (2016)
https://doi.org/10.1063/1.4965979
Published: October 2016
View article titled, High-efficiency AlGaInP solar cells grown by molecular beam epitaxy
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Journal Articles

Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

R. Salas, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, S. R. Bank
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 182102 (2016)
https://doi.org/10.1063/1.4948581
Published: May 2016
View article titled, Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
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Journal Articles

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

C. S. Schulze, X. Huang, C. Prohl, V. Füllert, S. Rybank, S. J. Maddox, S. D. March, S. R. Bank, M. L. Lee, A. Lenz
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 143101 (2016)
https://doi.org/10.1063/1.4945598
Published: April 2016
View article titled, Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate
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Journal Articles

Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation

R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, E. M. Krivoy, D. Jung, M. L. Lee, S. R. Bank
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 081103 (2015)
https://doi.org/10.1063/1.4913611
Published: February 2015
View article titled, Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
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Journal Articles

Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy

M. Vaisman, S. Tomasulo, T. Masuda, J. R. Lang, J. Faucher, M. L. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 063903 (2015)
https://doi.org/10.1063/1.4908181
Published: February 2015
View article titled, Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy
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Journal Articles

Increased InAs quantum dot size and density using bismuth as a surfactant

Vaishno D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, S. R. Bank
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 253104 (2014)
https://doi.org/10.1063/1.4904825
Published: December 2014
View article titled, Increased InAs quantum dot size and density using bismuth as a surfactant
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Journal Articles

Controlling quantum dot energies using submonolayer bandstructure engineering

L. Yu, D. Jung, S. Law, J. Shen, J. J. Cha, M. L. Lee, D. Wasserman
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 081103 (2014)
https://doi.org/10.1063/1.4893983
Published: August 2014
View article titled, Controlling quantum dot energies using submonolayer bandstructure engineering
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Includes: Supplementary data
Journal Articles

Metamorphic 2.1-2.2 eV InGaP solar cells on GaP substrates

S. Tomasulo, K. Nay Yaung, J. Faucher, M. Vaisman, M. L. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 173903 (2014)
https://doi.org/10.1063/1.4874615
Published: May 2014
View article titled, Metamorphic 2.1-2.2 eV InGaP solar cells on GaP substrates
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Journal Articles

Single-junction GaAsP solar cells grown on SiGe graded buffers on Si

J. Faucher, A. Gerger, S. Tomasulo, C. Ebert, A. Lochtefeld, A. Barnett, M. L. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 191901 (2013)
https://doi.org/10.1063/1.4828879
Published: November 2013
View article titled, Single-junction GaAsP solar cells grown on SiGe graded buffers on Si
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Journal Articles

GaAsP solar cells on GaP substrates by molecular beam epitaxy

S. Tomasulo, K. Nay Yaung, J. Simon, M. L. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 033911 (2012)
https://doi.org/10.1063/1.4738373
Published: July 2012
View article titled, GaAsP solar cells on GaP substrates by molecular beam epitaxy
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Journal Articles

Graphitized carbon on GaAs(100) substrates

J. Simon, P. J. Simmonds, J. M. Woodall, M. L. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 073113 (2011)
https://doi.org/10.1063/1.3555442
Published: February 2011
View article titled, Graphitized carbon on GaAs(100) substrates
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Journal Articles

Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells

J. Simon, S. Tomasulo, P. J. Simmonds, M. Romero, M. L. Lee
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 013708 (2011)
https://doi.org/10.1063/1.3525599
Published: January 2011
View article titled, Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells
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Journal Articles

Polarized edge emission from GaN-based light-emitting diodes sandwiched by dielectric/metal hybrid reflectors

L. J. Yan, J. K. Sheu, F. W. Huang, M. L. Lee
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 113102 (2010)
https://doi.org/10.1063/1.3516472
Published: December 2010
View article titled, Polarized edge emission from GaN-based light-emitting diodes sandwiched by dielectric/metal hybrid reflectors
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Journal Articles

Tensile strained island growth at step-edges on GaAs(110)

P. J. Simmonds, M. L. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 153101 (2010)
https://doi.org/10.1063/1.3498676
Published: October 2010
View article titled, Tensile strained island growth at step-edges on GaAs(110)
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