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Journal Articles

Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies

M. L. Green, C. L. Choi, J. R. Hattrick-Simpers, A. M. Joshi, I. Takeuchi, S. C. Barron, E. Campo, T. Chiang, S. Empedocles, J. M. Gregoire, A. G. Kusne, J. Martin, A. Mehta, K. Persson, Z. Trautt, J. Van Duren, A. Zakutayev

Appl. Phys. Rev. 4, 011105 (2017)

https://doi.org/10.1063/1.4977487

Published: March 2017

View article titled, Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies

Journal Articles

An apparatus for spatially resolved, temperature dependent reflectance measurements for identifying thermochromism in combinatorial thin film libraries

S. C. Barron, M. P. Patel, Nam Nguyen, N. V. Nguyen, M. L. Green

Rev. Sci. Instrum. 86, 113903 (2015)

https://doi.org/10.1063/1.4935477

Published: November 2015

View article titled, An apparatus for spatially resolved, temperature dependent reflectance measurements for identifying thermochromism in combinatorial thin film libraries

Includes: Supplementary data

Journal Articles

Physical and chemical characterization of combinatorial metal gate electrode Ta–C–N library film

K.-S. Chang, M. L. Green, I. Levin, J. R. Hattrick-Simpers, C. Jaye, D. A. Fischer, I. Takeuchi, S. De Gendt

Appl. Phys. Lett. 96, 192114 (2010)

https://doi.org/10.1063/1.3428788

Published: May 2010

View article titled, Physical and chemical characterization of combinatorial metal gate electrode Ta–C–N library film

Journal Articles

Manipulation of the crystallinity boundary of pulsed laser deposited high-k HfO 2 – TiO 2 – Y 2 O 3 combinatorial thin films

J. L. Klamo, P. K. Schenck, P. G. Burke, K.-S. Chang, M. L. Green

J. Appl. Phys. 107, 054101 (2010)

https://doi.org/10.1063/1.3294607

Published: March 2010

View article titled, Manipulation of the crystallinity boundary of pulsed laser deposited high-k HfO 2 – TiO 2 – Y 2 O 3 combinatorial thin films

Journal Articles

Annealing behavior of atomic layer deposited HfO 2 films studied by synchrotron x-ray reflectivity and grazing incidence small angle scattering

M. L. Green, A. J. Allen, J. L. Jordan-Sweet, J. Ilavsky

J. Appl. Phys. 105, 103522 (2009)

https://doi.org/10.1063/1.3125510

Published: May 2009

View article titled, Annealing behavior of atomic layer deposited HfO 2 films studied by synchrotron x-ray reflectivity and grazing incidence small angle scattering

Journal Articles

Combinatorial Methodologies Applied to the Advanced CMOS Gate Stack

K.‐S. Chang, N. D. Bassim, P. K. Schenck, J. Suehle, I. Takeuchi, M. L. Green

AIP Conf. Proc. 931, 297–302 (2007)

https://doi.org/10.1063/1.2799387

Published: September 2007

View article titled, Combinatorial Methodologies Applied to the Advanced CMOS Gate Stack

Journal Articles

Thin‐Film Nanocalorimetry: A New Approach to the Evaluation of Interfacial Stability for Nanoelectronic Applications

L. P. Cook, R. E. Cavicchi, M. L. Green, C. B. Montgomery, W. F. Egelhoff

AIP Conf. Proc. 931, 151–155 (2007)

https://doi.org/10.1063/1.2799361

Published: September 2007

View article titled, Thin‐Film Nanocalorimetry: A New Approach to the Evaluation of Interfacial Stability for Nanoelectronic Applications

Journal Articles

A high-throughput thermoelectric power-factor screening tool for rapid construction of thermoelectric property diagrams

M. Otani, N. D. Lowhorn, P. K. Schenck, W. Wong-Ng, M. L. Green, K. Itaka, H. Koinuma

Appl. Phys. Lett. 91, 132102 (2007)

https://doi.org/10.1063/1.2789289

Published: September 2007

View article titled, A high-throughput thermoelectric power-factor screening tool for rapid construction of thermoelectric property diagrams

Journal Articles

Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO 2 gate stack structures

K. Ohmori, P. Ahmet, M. Yoshitake, T. Chikyow, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, Y. Nara, K.-S. Chang, M. L. Green, K. Yamada

J. Appl. Phys. 101, 084118 (2007)

https://doi.org/10.1063/1.2721384

Published: April 2007

View article titled, Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO 2 gate stack structures

Journal Articles

Combinatorial study of Ni–Ti–Pt ternary metal gate electrodes on Hf O 2 for the advanced gate stack

K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, J. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner

Appl. Phys. Lett. 89, 142108 (2006)

https://doi.org/10.1063/1.2357011

Published: October 2006

View article titled, Combinatorial study of Ni–Ti–Pt ternary metal gate electrodes on Hf O 2 for the advanced gate stack

Journal Articles

Nucleation of atomic-layer-deposited HfO 2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

M. L. Green, A. J. Allen, X. Li, J. Wang, J. Ilavsky, A. Delabie, R. L. Puurunen, B. Brijs

Appl. Phys. Lett. 88, 032907 (2006)

https://doi.org/10.1063/1.2164417

Published: January 2006

View article titled, Nucleation of atomic-layer-deposited HfO 2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

Journal Articles

Strain relaxation in patterned strained silicon directly on insulator structures

R. Z. Lei, W. Tsai, I. Aberg, T. B. O’Reilly, J. L. Hoyt, D. A. Antoniadis, Henry I. Smith, A. J. Paul, M. L. Green, J. Li, R. Hull

Appl. Phys. Lett. 87, 251926 (2005)

https://doi.org/10.1063/1.2149153

Published: December 2005

View article titled, Strain relaxation in patterned strained silicon directly on insulator structures

Journal Articles

Comment on “Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water” [J. Appl. Phys. 95, 4777 (2004)]

M. A. Alam, M. L. Green

J. Appl. Phys. 98, 016101 (2005)

https://doi.org/10.1063/1.1943502

Published: July 2005

View article titled, Comment on “Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water” [J. Appl. Phys. 95, 4777 (2004)]

Journal Articles

Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO 2 gate dielectric layers

M. A. Alam, M. L. Green

J. Appl. Phys. 94, 3403–3413 (2003)

https://doi.org/10.1063/1.1599978

Published: September 2003

View article titled, Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO 2 gate dielectric layers

Journal Articles

Composition-dependent crystallization of alternative gate dielectrics

R. B. van Dover, M. L. Green, L. Manchanda, L. F. Schneemeyer, T. Siegrist

Appl. Phys. Lett. 83, 1459–1461 (2003)

https://doi.org/10.1063/1.1603341

Published: August 2003

View article titled, Composition-dependent crystallization of alternative gate dielectrics

Journal Articles

Morphology and crystallization kinetics in HfO 2 thin films grown by atomic layer deposition

M.-Y. Ho, H. Gong, G. D. Wilk, B. W. Busch, M. L. Green, P. M. Voyles, D. A. Muller, M. Bude, W. H. Lin, A. See, M. E. Loomans, S. K. Lahiri, Petri I. Räisänen

J. Appl. Phys. 93, 1477–1481 (2003)

https://doi.org/10.1063/1.1534381

Published: February 2003

View article titled, Morphology and crystallization kinetics in HfO 2 thin films grown by atomic layer deposition

Journal Articles

Nucleation and growth of atomic layer deposited HfO 2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide ( SiO 2 or Si–O–N) underlayers

M. L. Green, M.-Y. Ho, B. Busch, G. D. Wilk, T. Sorsch, T. Conard, B. Brijs, W. Vandervorst, P. I. Räisänen, D. Muller, M. Bude, J. Grazul

J. Appl. Phys. 92, 7168–7174 (2002)

https://doi.org/10.1063/1.1522811

Published: December 2002

View article titled, Nucleation and growth of atomic layer deposited HfO 2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide ( SiO 2 or Si–O–N) underlayers

Journal Articles

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al 2 O 3 using atomic layer deposition

M.-Y. Ho, H. Gong, G. D. Wilk, B. W. Busch, M. L. Green, W. H. Lin, A. See, S. K. Lahiri, M. E. Loomans, Petri I. Räisänen, T. Gustafsson

Appl. Phys. Lett. 81, 4218–4220 (2002)

https://doi.org/10.1063/1.1522826

Published: November 2002

View article titled, Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al 2 O 3 using atomic layer deposition

Journal Articles

Crystallization kinetics in amorphous ( Zr 0.62 Al 0.38 ) O 1.8 thin films

R. B. van Dover, D. V. Lang, M. L. Green, L. Manchanda

J. Vac. Sci. Technol. A 19, 2779–2784 (2001)

https://doi.org/10.1116/1.1403715

Published: November 2001

View article titled, Crystallization kinetics in amorphous ( Zr 0.62 Al 0.38 ) O 1.8 thin films

Journal Articles

Ultrathin (<4 nm) SiO 2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

M. L. Green, E. P. Gusev, R. Degraeve, E. L. Garfunkel

J. Appl. Phys. 90, 2057–2121 (2001)

https://doi.org/10.1063/1.1385803

Published: September 2001

View article titled, Ultrathin (<4 nm) SiO 2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

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Topics

Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies

An apparatus for spatially resolved, temperature dependent reflectance measurements for identifying thermochromism in combinatorial thin film libraries

Physical and chemical characterization of combinatorial metal gate electrode Ta–C–N library film

Manipulation of the crystallinity boundary of pulsed laser deposited high-k HfO 2 – TiO 2 – Y 2 O 3 combinatorial thin films

Annealing behavior of atomic layer deposited HfO 2 films studied by synchrotron x-ray reflectivity and grazing incidence small angle scattering

Combinatorial Methodologies Applied to the Advanced CMOS Gate Stack

Thin‐Film Nanocalorimetry: A New Approach to the Evaluation of Interfacial Stability for Nanoelectronic Applications

A high-throughput thermoelectric power-factor screening tool for rapid construction of thermoelectric property diagrams

Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO 2 gate stack structures

Combinatorial study of Ni–Ti–Pt ternary metal gate electrodes on Hf O 2 for the advanced gate stack

Nucleation of atomic-layer-deposited HfO 2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

Strain relaxation in patterned strained silicon directly on insulator structures

Comment on “Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water” [J. Appl. Phys. 95, 4777 (2004)]

Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO 2 gate dielectric layers

Composition-dependent crystallization of alternative gate dielectrics

Morphology and crystallization kinetics in HfO 2 thin films grown by atomic layer deposition

Nucleation and growth of atomic layer deposited HfO 2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide ( SiO 2 or Si–O–N) underlayers

Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al 2 O 3 using atomic layer deposition

Crystallization kinetics in amorphous ( Zr 0.62 Al 0.38 ) O 1.8 thin films

Ultrathin (<4 nm) SiO 2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

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