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Journal Articles

Deep level traps in (010) β-Ga₂O₃ epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga₂O₃ substrates

C. A. Dawe, V. P. Markevich, M. P. Halsall, I. D. Hawkins, A. R. Peaker, A. Nandi, I. Sanyal, M. Kuball

J. Appl. Phys. 136, 045705 (2024)

https://doi.org/10.1063/5.0202581

Published: July 2024

View article titled, Deep level traps in (010) β-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga2O3 substrates

Journal Articles

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

P. Chauhan, S. Hasenöhrl, E. Dobročka, M. P. Chauvat, A. Minj, F. Gucmann, Ľ. Vančo, J. Kováč, Jr., S. Kret, P. Ruterana, M. Kuball, P. Šiffalovič, J. Kuzmík

J. Appl. Phys. 125, 105304 (2019)

https://doi.org/10.1063/1.5079756

Published: March 2019

View article titled, Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Journal Articles

Leakage mechanisms in GaN-on-GaN vertical pn diodes

B. Rackauskas, S. Dalcanale, M. J. Uren, T. Kachi, M. Kuball

Appl. Phys. Lett. 112, 233501 (2018)

https://doi.org/10.1063/1.5033436

Published: June 2018

View article titled, Leakage mechanisms in GaN-on-GaN vertical pn diodes

Journal Articles

Solid immersion lenses for enhancing the optical resolution of thermal and electroluminescence mapping of GaN-on-SiC transistors

J. W. Pomeroy, M. Kuball

J. Appl. Phys. 118, 144501 (2015)

https://doi.org/10.1063/1.4932029

Published: October 2015

View article titled, Solid immersion lenses for enhancing the optical resolution of thermal and electroluminescence mapping of GaN-on-SiC transistors

Journal Articles

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

N. Killat, M. J. Uren, S. Keller, S. Kolluri, U. K. Mishra, M. Kuball

Appl. Phys. Lett. 105, 063506 (2014)

https://doi.org/10.1063/1.4892449

Published: August 2014

View article titled, Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

Journal Articles

Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

M. Montes Bajo, H. Sun, M. J. Uren, M. Kuball

Appl. Phys. Lett. 104, 223506 (2014)

https://doi.org/10.1063/1.4881637

Published: June 2014

View article titled, Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

Journal Articles

Terahertz oscillations in an In_0.53Ga_0.47As submicron planar Gunn diode

Ata Khalid, G. M. Dunn, R. F. Macpherson, S. Thoms, D. Macintyre, C. Li, M. J. Steer, V. Papageorgiou, I. G. Thayne, M. Kuball, C. H. Oxley, M. Montes Bajo, A. Stephen, J. Glover, D. R. S. Cumming

J. Appl. Phys. 115, 114502 (2014)

https://doi.org/10.1063/1.4868705

Published: March 2014

View article titled, Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Journal Articles

Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

J. W. Pomeroy, M. Bernardoni, D. C. Dumka, D. M. Fanning, M. Kuball

Appl. Phys. Lett. 104, 083513 (2014)

https://doi.org/10.1063/1.4865583

Published: February 2014

View article titled, Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

Journal Articles

Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

C. Hodges, J. Pomeroy, M. Kuball

J. Appl. Phys. 115, 064504 (2014)

https://doi.org/10.1063/1.4865296

Published: February 2014

View article titled, Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

Journal Articles

Micro-cooler enhancements by barrier interface analysis

A. Stephen, G. M. Dunn, J. Glover, C. H. Oxley, M. Montes Bajo, D. R. S. Cumming, A. Khalid, M. Kuball

AIP Advances 4, 027105 (2014)

https://doi.org/10.1063/1.4865251

Published: February 2014

View article titled, Micro-cooler enhancements by barrier interface analysis

Journal Articles

AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

C. Hodges, J. Anaya Calvo, S. Stoffels, D. Marcon, M. Kuball

Appl. Phys. Lett. 103, 202108 (2013)

https://doi.org/10.1063/1.4831688

Published: November 2013

View article titled, AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

Journal Articles

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

N. Killat, M. Montes Bajo, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins, M. Kuball

Appl. Phys. Lett. 103, 193507 (2013)

https://doi.org/10.1063/1.4829062

Published: November 2013

View article titled, Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Journal Articles

Improvements in thermionic cooling through engineering of the heterostructure interface using Monte Carlo simulations

A. Stephen, G. M. Dunn, C. H. Oxley, J. Glover, M. Montes Bajo, D. R. S. Cumming, A. Khalid, M. Kuball

J. Appl. Phys. 114, 043717 (2013)

https://doi.org/10.1063/1.4817087

Published: July 2013

View article titled, Improvements in thermionic cooling through engineering of the heterostructure interface using Monte Carlo simulations

Journal Articles

Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping non-uniformities

M. Montes Bajo, G. Dunn, A. Stephen, Ata Khalid, D. R. S. Cumming, C. H. Oxley, J. Glover, M. Kuball

J. Appl. Phys. 113, 124505 (2013)

https://doi.org/10.1063/1.4798270

Published: March 2013

View article titled, Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping non-uniformities

Journal Articles

Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping

N. Killat, M. J. Uren, D. J. Wallis, T. Martin, M. Kuball

Appl. Phys. Lett. 101, 153505 (2012)

https://doi.org/10.1063/1.4757993

Published: October 2012

View article titled, Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping

Journal Articles

On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

M. Montes Bajo, C. Hodges, M. J. Uren, M. Kuball

Appl. Phys. Lett. 101, 033508 (2012)

https://doi.org/10.1063/1.4737904

Published: July 2012

View article titled, On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

Journal Articles

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

C. Hodges, N. Killat, S. W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck, D. Wolverson, M. Kuball

Appl. Phys. Lett. 100, 112106 (2012)

https://doi.org/10.1063/1.3693427

Published: March 2012

View article titled, Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Journal Articles

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

M. Ťapajna, S. W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck, M. Kuball

Appl. Phys. Lett. 99, 223501 (2011)

https://doi.org/10.1063/1.3663573

Published: November 2011

View article titled, Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

Journal Articles

Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide

Y. Gong, Y. Zhang, M. Dudley, Y. Zhang, J. H. Edgar, P. J. Heard, M. Kuball

J. Appl. Phys. 108, 084906 (2010)

https://doi.org/10.1063/1.3486518

Published: October 2010

View article titled, Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide

Journal Articles

Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence

R. J. T. Simms, F. Gao, Y. Pei, T. Palacios, U. K. Mishra, M. Kuball

Appl. Phys. Lett. 97, 033502 (2010)

https://doi.org/10.1063/1.3464959

Published: July 2010

View article titled, Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence

NARROW

Topics

Deep level traps in (010) β-Ga₂O₃ epilayers grown by metal organic chemical vapor deposition on Sn-doped β-Ga₂O₃ substrates

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Leakage mechanisms in GaN-on-GaN vertical pn diodes

Solid immersion lenses for enhancing the optical resolution of thermal and electroluminescence mapping of GaN-on-SiC transistors

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

Terahertz oscillations in an In_0.53Ga_0.47As submicron planar Gunn diode

Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

Micro-cooler enhancements by barrier interface analysis

AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Improvements in thermionic cooling through engineering of the heterostructure interface using Monte Carlo simulations

Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping non-uniformities

Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping

On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide

Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence

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