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M. Kneissl
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Journal Articles

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

F. Piva, M. Pilati, M. Buffolo, N. Roccato, N. Susilo, D. Hauer Vidal, A. Muhin, L. Sulmoni, T. Wernicke, M. Kneissl, C. De Santi, G. Meneghesso, E. Zanoni, M. Meneghini
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 181102 (2023)
https://doi.org/10.1063/5.0144783
Published: May 2023
View article titled, Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
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Journal Articles

Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs

F. Piva, M. Grigoletto, R. Brescancin, C. De Santi, M. Buffolo, J. Ruschel, J. Glaab, D. Hauer Vidal, M. Guttmann, J. Rass, S. Einfeldt, N. Susilo, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni, M. Meneghini
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 151108 (2023)
https://doi.org/10.1063/5.0142054
Published: April 2023
View article titled, Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs
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Journal Articles

Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates

Editor’s Pick
A. Knauer, T. Kolbe, S. Hagedorn, J. Hoepfner, M. Guttmann, H. K. Cho, J. Rass, J. Ruschel, S. Einfeldt, M. Kneissl, M. Weyers
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 011102 (2023)
https://doi.org/10.1063/5.0134253
Published: January 2023
View article titled, Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
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Journal Articles

Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning

G. Cardinali, F. Hjort, N. Prokop, J. Enslin, M. Cobet, M. A. Bergmann, J. Gustavsson, J. Ciers, I. Häusler, T. Kolbe, T. Wernicke, Å. Haglund, M. Kneissl
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 103501 (2022)
https://doi.org/10.1063/5.0097903
Published: September 2022
View article titled, Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning
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Journal Articles

Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs

J. Glaab, J. Ruschel, N. Lobo Ploch, H. K. Cho, F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, M. Weyers, S. Einfeldt, M. Kneissl
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 014501 (2022)
https://doi.org/10.1063/5.0069590
Published: January 2022
View article titled, Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs
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Journal Articles

Vertical conductivity and Poole–Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction

A. Muhin, M. Guttmann, C. Kuhn, E. Mickein, J. R. Aparici, E. Ziffer, N. Susilo, L. Sulmoni, T. Wernicke, M. Kneissl
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 252101 (2020)
https://doi.org/10.1063/5.0027336
Published: December 2020
View article titled, Vertical conductivity and Poole–Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction
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Journal Articles

Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

I. Prozheev, F. Mehnke, T. Wernicke, M. Kneissl, F. Tuomisto
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 142103 (2020)
https://doi.org/10.1063/5.0016494
Published: October 2020
View article titled, Electrical compensation and cation vacancies in Al rich Si-doped AlGaN
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Journal Articles

Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs

J. Ruschel, J. Glaab, M. Brendel, J. Rass, C. Stölmacker, N. Lobo-Ploch, T. Kolbe, T. Wernicke, F. Mehnke, J. Enslin, S. Einfeldt, M. Weyers, M. Kneissl
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 084504 (2018)
https://doi.org/10.1063/1.5028047
Published: August 2018
View article titled, Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs
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Journal Articles

The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers

M. Martens, C. Kuhn, T. Simoneit, S. Hagedorn, A. Knauer, T. Wernicke, M. Weyers, M. Kneissl
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 081103 (2017)
https://doi.org/10.1063/1.4977029
Published: February 2017
View article titled, The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers
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Journal Articles

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, M. Kneissl
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 151108 (2016)
https://doi.org/10.1063/1.4947102
Published: April 2016
View article titled, Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes
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Journal Articles

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan
Journal: AIP Advances
AIP Advances 4, 127101 (2014)
https://doi.org/10.1063/1.4903227
Published: December 2014
View article titled, Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors
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Journal Articles

Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes

J. Jeschke, U. Zeimer, L. Redaelli, S. Einfeldt, M. Kneissl, M. Weyers
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 173501 (2014)
https://doi.org/10.1063/1.4899298
Published: October 2014
View article titled, Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes
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Journal Articles

Impact of electron irradiation on electron holographic potentiometry

J. B. Park, T. Niermann, D. Berger, A. Knauer, I. Koslow, M. Weyers, M. Kneissl, M. Lehmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 094102 (2014)
https://doi.org/10.1063/1.4894718
Published: September 2014
View article titled, Impact of electron irradiation on electron holographic potentiometry
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Includes: Supplementary data
Journal Articles

Polarity determination of polar and semipolar ( 11 2 ¯ 2 )   InN and GaN layers by valence band photoemission spectroscopy

D. Skuridina, D. V. Dinh, B. Lacroix, P. Ruterana, M. Hoffmann, Z. Sitar, M. Pristovsek, M. Kneissl, P. Vogt
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 173503 (2013)
https://doi.org/10.1063/1.4828487
Published: November 2013
View article titled, Polarity determination of polar and semipolar ( 11 2 ¯ 2 )   InN and GaN layers by valence band photoemission spectroscopy
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Journal Articles

Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes

L. Redaelli, H. Wenzel, M. Martens, S. Einfeldt, M. Kneissl, G. Tränkle
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 113102 (2013)
https://doi.org/10.1063/1.4821064
Published: September 2013
View article titled, Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes
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Journal Articles

Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure

T. Kolbe, F. Mehnke, M. Guttmann, C. Kuhn, J. Rass, T. Wernicke, M. Kneissl
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 031109 (2013)
https://doi.org/10.1063/1.4813859
Published: July 2013
View article titled, Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure
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Journal Articles

Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells

R. Debusmann, U. Brauch, V. Hoffmann, M. Weyers, M. Kneissl
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 033110 (2012)
https://doi.org/10.1063/1.4745025
Published: August 2012
View article titled, Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells
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Journal Articles

Preparation and atomic structure of reconstructed (0001) InGaN surfaces

C. Friedrich, A. Biermann, V. Hoffmann, M. Kneissl, N. Esser, P. Vogt
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 033509 (2012)
https://doi.org/10.1063/1.4743000
Published: August 2012
View article titled, Preparation and atomic structure of reconstructed (0001) InGaN surfaces
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Journal Articles

Growth and characterizations of semipolar ( 11 2 ¯ 2 ) InN

Duc V. Dinh, D. Skuridina, S. Solopow, M. Frentrup, M. Pristovsek, P. Vogt, M. Kneissl, F. Ivaldi, S. Kret, A. Szczepańska
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 013530 (2012)
https://doi.org/10.1063/1.4733997
Published: July 2012
View article titled, Growth and characterizations of semipolar ( 11 2 ¯ 2 ) InN
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Journal Articles

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, T. Kolbe
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 021101 (2012)
https://doi.org/10.1063/1.3675451
Published: January 2012
View article titled, Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
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