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Journal Articles

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

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D. Martin, J. Napierala, M. Ilegems, R. Butté, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 241914 (2006)
https://doi.org/10.1063/1.2213175
Published: June 2006
View articletitled, High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates
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Journal Articles

Stranski-Krastanov Ga N ∕ Al N quantum dots grown by metal organic vapor phase epitaxy

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D. Simeonov, E. Feltin, J.-F. Carlin, R. Butté, M. Ilegems, N. Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 083509 (2006)
https://doi.org/10.1063/1.2189975
Published: May 2006
View articletitled, Stranski-Krastanov Ga N ∕ Al N quantum dots grown by metal organic vapor phase epitaxy
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Journal Articles

Indium surfactant effect on Al N ∕ Ga N heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

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S. Nicolay, E. Feltin, J.-F. Carlin, M. Mosca, L. Nevou, M. Tchernycheva, F. H. Julien, M. Ilegems, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 151902 (2006)
https://doi.org/10.1063/1.2186971
Published: April 2006
View articletitled, Indium surfactant effect on Al N ∕ Ga N heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions
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Journal Articles

Crack-free highly reflective Al In N ∕ Al Ga N Bragg mirrors for UV applications

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E. Feltin, J.-F. Carlin, J. Dorsaz, G. Christmann, R. Butté, M. Laügt, M. Ilegems, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 051108 (2006)
https://doi.org/10.1063/1.2167399
Published: January 2006
View articletitled, Crack-free highly reflective Al In N ∕ Al Ga N Bragg mirrors for UV applications
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Journal Articles

Midinfrared intersubband absorption in lattice-matched Al In N ∕ Ga N multiple quantum wells

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S. Nicolay, J.-F. Carlin, E. Feltin, R. Butté, M. Mosca, N. Grandjean, M. Ilegems, M. Tchernycheva, L. Nevou, F. H. Julien
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 111106 (2005)
https://doi.org/10.1063/1.2045559
Published: September 2005
View articletitled, Midinfrared intersubband absorption in lattice-matched Al In N ∕ Ga N multiple quantum wells
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Journal Articles

Selective oxidation of AlInN layers for current confinement in III–nitride devices

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J. Dorsaz, H.-J. Bühlmann, J.-F. Carlin, N. Grandjean, M. Ilegems
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 072102 (2005)
https://doi.org/10.1063/1.2012533
Published: August 2005
View articletitled, Selective oxidation of AlInN layers for current confinement in III–nitride devices
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Journal Articles

Progress in AlInN–GaN Bragg reflectors: Application to a microcavity light emitting diode

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J. Dorsaz, J.-F. Carlin, S. Gradecak, M. Ilegems
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 084505 (2005)
https://doi.org/10.1063/1.1872197
Published: April 2005
View articletitled, Progress in AlInN–GaN Bragg reflectors: Application to a microcavity light emitting diode
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Journal Articles

Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors

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J.-F. Carlin, J. Dorsaz, E. Feltin, R. Butté, N. Grandjean, M. Ilegems, M. Laügt
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 031107 (2005)
https://doi.org/10.1063/1.1849851
Published: January 2005
View articletitled, Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors
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Journal Articles

Bending of dislocations in GaN during epitaxial lateral overgrowth

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S. Gradečak, P. Stadelmann, V. Wagner, M. Ilegems
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 4648–4650 (2004)
https://doi.org/10.1063/1.1823593
Published: November 2004
View articletitled, Bending of dislocations in GaN during epitaxial lateral overgrowth
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Journal Articles

High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

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J.-F. Carlin, M. Ilegems
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 668–670 (2003)
https://doi.org/10.1063/1.1596733
Published: July 2003
View articletitled, High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
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Journal Articles

Comparison of radiative and structural properties of 1.3 μm In x Ga (1−x) As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

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A. Passaseo, M. De Vittorio, M. T. Todaro, I. Tarantini, M. De Giorgi, R. Cingolani, A. Taurino, M. Catalano, A. Fiore, A. Markus, J. X. Chen, C. Paranthoen, U. Oesterle, M. Ilegems
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 3632–3634 (2003)
https://doi.org/10.1063/1.1578182
Published: May 2003
View articletitled, Comparison of radiative and structural properties of 1.3 μm In x Ga (1−x) As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties
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Journal Articles

Scaling quantum-dot light-emitting diodes to submicrometer sizes

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A. Fiore, J. X. Chen, M. Ilegems
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 1756–1758 (2002)
https://doi.org/10.1063/1.1504880
Published: September 2002
View articletitled, Scaling quantum-dot light-emitting diodes to submicrometer sizes
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Journal Articles

Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy

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V. Wagner, O. Parillaud, H. J. Bühlmann, M. Ilegems, S. Gradecak, P. Stadelmann, T. Riemann, J. Christen
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 1307–1316 (2002)
https://doi.org/10.1063/1.1489711
Published: August 2002
View articletitled, Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy
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Journal Articles

Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications

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J. X. Chen, A. Markus, A. Fiore, U. Oesterle, R. P. Stanley, J. F. Carlin, R. Houdré, M. Ilegems, L. Lazzarini, L. Nasi, M. T. Todaro, E. Piscopiello, R. Cingolani, M. Catalano, J. Katcki, J. Ratajczak
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 6710–6716 (2002)
https://doi.org/10.1063/1.1476069
Published: May 2002
View articletitled, Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications
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Journal Articles

Microscopic evidence of point defect incorporation in laterally overgrown GaN

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S. Gradečak, V. Wagner, M. Ilegems, T. Riemann, J. Christen, P. Stadelmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 80, 2866–2868 (2002)
https://doi.org/10.1063/1.1470696
Published: April 2002
View articletitled, Microscopic evidence of point defect incorporation in laterally overgrown GaN
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Journal Articles

Experimental determination of the internal quantum efficiency of AlGaInP microcavity light-emitting diodes

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P. Royo, R. P. Stanley, M. Ilegems, K. Streubel, K. H. Gulden
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 2563–2568 (2002)
https://doi.org/10.1063/1.1433938
Published: March 2002
View articletitled, Experimental determination of the internal quantum efficiency of AlGaInP microcavity light-emitting diodes
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Journal Articles

Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μ m

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A. Markus, A. Fiore, J. D. Ganière, U. Oesterle, J. X. Chen, B. Deveaud, M. Ilegems, H. Riechert
Journal: Applied Physics Letters
Appl. Phys. Lett. 80, 911–913 (2002)
https://doi.org/10.1063/1.1447595
Published: February 2002
View articletitled, Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μ m
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Journal Articles

Matrix effects on the structural and optical properties of InAs quantum dots

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J. X. Chen, U. Oesterle, A. Fiore, R. P. Stanley, M. Ilegems, T. Todaro
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 3681–3683 (2001)
https://doi.org/10.1063/1.1416162
Published: November 2001
View articletitled, Matrix effects on the structural and optical properties of InAs quantum dots
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Journal Articles

Planar dielectric microcavity light-emitting diodes: Analytical analysis of the extraction efficiency

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P. Royo, R. P. Stanley, M. Ilegems
Journal: Journal of Applied Physics
J. Appl. Phys. 90, 283–293 (2001)
https://doi.org/10.1063/1.1372366
Published: July 2001
View articletitled, Planar dielectric microcavity light-emitting diodes: Analytical analysis of the extraction efficiency
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Journal Articles

Deconvolution of the intrinsic spontaneous spectrum of vertical-cavity surface-emitting devices

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P. Royo, R. P. Stanley, M. Ilegems, K. Streubel, K. H. Gulden
Journal: Applied Physics Letters
Appl. Phys. Lett. 77, 3899–3901 (2000)
https://doi.org/10.1063/1.1332819
Published: December 2000
View articletitled, Deconvolution of the intrinsic spontaneous spectrum of vertical-cavity surface-emitting devices
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