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Journal Articles

Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra

I. Shlyakhov, K. Iakoubovskii, S. Banerjee, A. Gaur, D. Lin, I. Asselberghs, I. Radu, J. Chai, M. Yang, S. J. Wang, M. Houssa, A. Stesmans, V. Afanas’ev
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 155302 (2021)
https://doi.org/10.1063/5.0046305
Published: April 2021
View articletitled, Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra
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Includes: Supplementary data
Journal Articles

Impact of La–OH bonds on the retention of Co/LaSiO CBRAM

J. Radhakrishnan, A. Belmonte, L. Nyns, W. Devulder, G. Vereecke, G. L. Donadio, P. Kumbhare, R. Delhougne, M. Houssa, G. S. Kar, L. Goux
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 151902 (2020)
https://doi.org/10.1063/5.0021250
Published: October 2020
View articletitled, Impact of La–OH bonds on the retention of Co/LaSiO CBRAM
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Journal Articles

Contact resistance at graphene/MoS2 lateral heterostructures

M. Houssa, K. Iordanidou, A. Dabral, A. Lu, R. Meng, G. Pourtois, V. V. Afanas'ev, A. Stesmans
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 163101 (2019)
https://doi.org/10.1063/1.5083133
Published: April 2019
View articletitled, Contact resistance at graphene/MoS2 lateral heterostructures
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Journal Articles

Ferromagnetism in two-dimensional hole-doped SnO

Editor’s Pick
M. Houssa, K. Iordanidou, G. Pourtois, V. V. Afanas’ev, A. Stesmans
Journal: AIP Advances
AIP Advances 8, 055010 (2018)
https://doi.org/10.1063/1.5025272
Published: May 2018
View articletitled, Ferromagnetism in two-dimensional hole-doped SnO
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Journal Articles

Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

I. Shlyakhov, J. Chai, M. Yang, S. J. Wang, V. V. Afanas’ev, M. Houssa, A. Stesmans
Journal: APL Materials
APL Mater. 6, 026801 (2018)
https://doi.org/10.1063/1.5002617
Published: November 2017
View articletitled, Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
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Includes: Supplementary data
Journal Articles

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

H.-Y. Chou, E. O'Connor, A. O'Mahony, I. M. Povey, P. K. Hurley, Lin Dong, P. D. Ye, V. V. Afanas'ev, M. Houssa, A. Stesmans
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 235701 (2016)
https://doi.org/10.1063/1.4971178
Published: December 2016
View articletitled, Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3
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Journal Articles

Intrinsic electron traps in atomic-layer deposited HfO2 insulators

F. Cerbu, O. Madia, D. V. Andreev, S. Fadida, M. Eizenberg, L. Breuil, J. G. Lisoni, J. A. Kittl, J. Strand, A. L. Shluger, V. V. Afanas'ev, M. Houssa, A. Stesmans
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 222901 (2016)
https://doi.org/10.1063/1.4952718
Published: May 2016
View articletitled, Intrinsic electron traps in atomic-layer deposited HfO2 insulators
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Includes: Supplementary data
Journal Articles

Publisher's Note: “Collapse of the low temperature insulating state in Cr-doped V2O3 thin films” [Appl. Phys. Lett. 107 , 111904 (2015)]

P. Homm, L. Dillemans, M. Menghini, B. Van Bilzen, P. Bakalov, C.-Y. Su, R. Lieten, M. Houssa, D. Nasr Esfahani, L. Covaci, F. M. Peeters, J. W. Seo, J.-P. Locquet
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 149901 (2015)
https://doi.org/10.1063/1.4933042
Published: October 2015
View articletitled, Publisher's Note: “Collapse of the low temperature insulating state in Cr-doped V2O3 thin films” [Appl. Phys. Lett. 107 , 111904 (2015)]
Open the PDF for Publisher's Note: “Collapse of the low temperature insulating state in Cr-doped V2O3 thin films” [Appl. Phys. Lett. 107 , 111904 (2015)] in another window
Journal Articles

Collapse of the low temperature insulating state in Cr-doped V2O3 thin films

P. Homm, L. Dillemans, M. Menghini, B. Van Bilzen, P. Bakalov, C.-Y. Su, R. Lieten, M. Houssa, D. Nasr Esfahani, L. Covaci, F. M. Peeters, J. W. Seo, J.-P. Locquet
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 111904 (2015)
https://doi.org/10.1063/1.4931372
Published: September 2015
View articletitled, Collapse of the low temperature insulating state in Cr-doped V2O3 thin films
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Journal Articles

Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

A. Belmonte, R. Degraeve, A. Fantini, W. Kim, M. Houssa, M. Jurczak, L. Goux
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 233508 (2014)
https://doi.org/10.1063/1.4883856
Published: June 2014
View articletitled, Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability
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Journal Articles

Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels

H.-Y. Chou, V. V. Afanas'ev, M. Houssa, A. Stesmans, B. Vincent, F. Gencarelli, Y. Shimura, C. Merckling, R. Loo, O. Nakatsuka, S. Zaima
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 202107 (2014)
https://doi.org/10.1063/1.4878558
Published: May 2014
View articletitled, Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels
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Journal Articles

High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)

V. V. Afanas'ev, A. P. D. Nguyen, M. Houssa, A. Stesmans, Zs. Tőkei, M. R. Baklanov
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 172908 (2013)
https://doi.org/10.1063/1.4801938
Published: May 2013
View articletitled, High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)
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Journal Articles

Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3

H.-Y. Chou, V. V. Afanas’ev, M. Houssa, A. Stesmans, Lin Dong, P. D. Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 082114 (2012)
https://doi.org/10.1063/1.4747797
Published: August 2012
View articletitled, Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3
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Journal Articles

Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As

V. V. Afanas’ev, H.-Y. Chou, N. H. Thoan, C. Adelmann, H. C. Lin, M. Houssa, A. Stesmans
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 202104 (2012)
https://doi.org/10.1063/1.4710553
Published: May 2012
View articletitled, Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As
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Includes: Supplementary data
Journal Articles

Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

H. Y. Chou, E. O’Connor, P. K. Hurley, V. V. Afanas’ev, M. Houssa, A. Stesmans, P. D. Ye, S. B. Newcomb
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 141602 (2012)
https://doi.org/10.1063/1.3698461
Published: April 2012
View articletitled, Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3
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Includes: Supplementary data
Journal Articles

Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories

F. De Stefano, M. Houssa, J. A. Kittl, M. Jurczak, V. V. Afanas’ev, A. Stesmans
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 142102 (2012)
https://doi.org/10.1063/1.3696672
Published: April 2012
View articletitled, Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories
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Journal Articles

Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition

H. Y. Chou, M. Badylevich, V. V. Afanas’ev, M. Houssa, A. Stesmans, J. Meersschaut, L. Goux, J. A. Kittl, D. J. Wouters
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 113724 (2011)
https://doi.org/10.1063/1.3658802
Published: December 2011
View articletitled, Electronic structure of NiO layers grown on Al2O3 and SiO2 using metallo-organic chemical vapour deposition
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Journal Articles

First-principles study of Ge dangling bonds in GeO2 and correlation with electron spin resonance at Ge/GeO2 interfaces

M. Houssa, G. Pourtois, V. V. Afanas’ev, A. Stesmans
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 212103 (2011)
https://doi.org/10.1063/1.3662860
Published: November 2011
View articletitled, First-principles study of Ge dangling bonds in GeO2 and correlation with electron spin resonance at Ge/GeO2 interfaces
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Journal Articles

Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

V. V. Afanas’ev, H.-Y. Chou, M. Houssa, A. Stesmans, L. Lamagna, A. Lamperti, A. Molle, B. Vincent, G. Brammertz
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 172101 (2011)
https://doi.org/10.1063/1.3655470
Published: October 2011
View articletitled, Transitivity of band offsets between semiconductor heterojunctions and oxide insulators
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Journal Articles

Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling

E. Scalise, M. Houssa, G. Pourtois, V. V. Afanas’ev, A. Stesmans
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 132101 (2011)
https://doi.org/10.1063/1.3644158
Published: September 2011
View articletitled, Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling
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