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Journal Articles

Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications

Open Access
L. B. Young, Y. H. G. Lin, H. W. Wan, J. Liu, Y. T. Cheng, B. Y. Chen, K. M. Chen, H. W. Chang, M. J. Wang, J. Kwo, M. Hong
Journal: APL Electronic Devices
APL Electronic Devices 1, 016113 (2025)
https://doi.org/10.1063/5.0244788
Published: March 2025
View articletitled, Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications
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Journal Articles

Nanometer-thick molecular beam epitaxy Al films capped with in situ deposited Al2O3—High-crystallinity, morphology, and superconductivity

Open Access
Y. H. G. Lin, C. K. Cheng, L. B. Young, L. S. Chiang, W. S. Chen, K. H. Lai, S. P. Chiu, C. T. Wu, C. T. Liang, J. J. Lin, C. H. Hsu, Y. H. Lin, J. Kwo, M. Hong
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 074401 (2024)
https://doi.org/10.1063/5.0213941
Published: August 2024
View articletitled, Nanometer-thick molecular beam epitaxy Al films capped with in situ deposited Al2O3—High-crystallinity, morphology, and superconductivity
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Journal Articles

Effective passivation of p- and n-type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps

Open Access
Y. H. G. Lin, H. W. Wan, L. B. Young, K. H. Lai, J. Liu, Y. T. Cheng, J. Kwo, M. Hong
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 015701 (2024)
https://doi.org/10.1063/5.0174575
Published: January 2024
View articletitled, Effective passivation of p- and n-type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps
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Journal Articles

The effect of utilitarian-based online store attributes, hedonic-based online store attributes, and online review towards online impulse buying behaviour in Malaysia: A review

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L. M. Hong, N. Che Nawi, Wan Zulkiffli
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2544, 050061 (2023)
https://doi.org/10.1063/5.0117276
Published: April 2023
View articletitled, The effect of utilitarian-based online store attributes, hedonic-based online store attributes, and online review towards online impulse buying behaviour in Malaysia: A review
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Journal Articles

In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures

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Y. H. G. Lin, H. W. Wan, L. B. Young, J. Liu, Y. T. Cheng, K. Y. Lin, Y. J. Hong, C. T. Wu, J. Kwo, M. Hong
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 252104 (2021)
https://doi.org/10.1063/5.0045845
Published: June 2021
View articletitled, In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures
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Includes: Supplementary data
Journal Articles

Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces

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C. C. Chen (陳俊嘉), K. H. M. Chen (陳可璇), Y. T. Fanchiang (范姜宇廷), C. C. Tseng (曾俊智), S. R. Yang (楊尚融), C. N. Wu (巫啓男), M. X. Guo (郭孟鑫), C. K. Cheng (鄭兆凱), S. W. Huang (黃聖文), K. Y. Lin (林耕雍), C. T. Wu (吳建霆), M. Hong (洪銘輝), J. Kwo (郭瑞年)
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 031601 (2019)
https://doi.org/10.1063/1.5054329
Published: January 2019
View articletitled, Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces
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Includes: Supplementary data
Journal Articles

A new stable, crystalline capping material for topological insulators

Open Access
H. Y. Lin, C. K. Cheng, K. H. M. Chen, C. C. Tseng, S. W. Huang, M. T. Chang, S. C. Tseng, M. Hong, J. Kwo
Journal: APL Materials
APL Mater. 6, 066108 (2018)
https://doi.org/10.1063/1.5029706
Published: June 2018
View articletitled, A new stable, crystalline capping material for topological insulators
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Journal Articles

High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering

Open Access
C. N. Wu, C. C. Tseng, K. Y. Lin, C. K. Cheng, S. L. Yeh, Y. T. Fanchiang, M. Hong, J. Kwo
Journal: AIP Advances
Series: Magnetism and Magnetic Materials
AIP Advances 8, 055904 (2018)
https://doi.org/10.1063/1.5006673
Published: December 2017
View articletitled, High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering
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Journal Articles

Investigation of the two- and three-fragment photodissociation of the tert-butyl peroxy radical at 248 nm

Free
Bethan Nichols, Erin N. Sullivan, Mikhail Ryazanov, Cynthia M. Hong, Daniel M. Neumark
Journal: The Journal of Chemical Physics
J. Chem. Phys. 147, 134304 (2017)
https://doi.org/10.1063/1.4994713
Published: October 2017
View articletitled, Investigation of the two- and three-fragment photodissociation of the tert-butyl peroxy radical at 248 nm
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Includes: Supplementary data
Journal Articles

Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition

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M. Hong, H. W. Wan, K. Y. Lin, Y. C. Chang, M. H. Chen, Y. H. Lin, T. D. Lin, T. W. Pi, J. Kwo
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 123502 (2017)
https://doi.org/10.1063/1.5003616
Published: September 2017
View articletitled, Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
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Journal Articles

Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2

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K. H. M. Chen (陳可璇), H. Y. Lin (林孝于), S. R. Yang (楊尚融), C. K. Cheng (鄭兆凱), X. Q. Zhang (張鋅權), C. M. Cheng (鄭澄懋), S. F. Lee (李尚凡), C. H. Hsu (徐嘉鴻), Y. H. Lee (李奕賢), M. Hong (洪銘輝), J. Kwo (郭瑞年)
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 083106 (2017)
https://doi.org/10.1063/1.4989805
Published: August 2017
View articletitled, Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2
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Includes: Supplementary data
Journal Articles

Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance

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T. W. Pi (皮敦文), W. S. Chen (陳婉馨), Y. H. Lin (林延勳), Y. T. Cheng (鄭伊婷), G. J. Wei (魏國珍), K. Y. Lin (林耕雍), C. -P. Cheng (鄭秋平), J. Kwo (郭瑞年), M. Hong (洪銘輝)
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 052107 (2017)
https://doi.org/10.1063/1.4975479
Published: February 2017
View articletitled, Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance
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Journal Articles

Demonstration of large field effect in topological insulator films via a high-κ back gate

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C. Y. Wang (王澄宇), H. Y. Lin (林孝于), S. R. Yang (楊尚融), K. H. M. Chen (陳可璇), Y. H. Lin (林延勳), K. H. Chen (陳冠雄), L. B. Young (楊博宇), C. K. Cheng (鄭兆凱), Y. T. Fanchiang (范姜宇廷), S. C. Tseng (曾紹欽), M. Hong (洪銘輝), J. Kwo (郭瑞年)
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 202403 (2016)
https://doi.org/10.1063/1.4950849
Published: May 2016
View articletitled, Demonstration of large field effect in topological insulator films via a high-κ back gate
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Journal Articles

Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface

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Y. C. Liu, Y. W. Chen, S. C. Tseng, M. T. Chang, S. C. Lo, Y. H. Lin, C. K. Cheng, H. Y. Hung, C. H. Hsu, J. Kwo, M. Hong
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 122402 (2015)
https://doi.org/10.1063/1.4931443
Published: September 2015
View articletitled, Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface
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Journal Articles

Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping

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C. N. Wu, Y. H. Lin, Y. T. Fanchiang, H. Y. Hung, H. Y. Lin, P. H. Lin, J. G. Lin, S. F. Lee, M. Hong, J. Kwo
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 117, 17D148 (2015)
https://doi.org/10.1063/1.4918631
Published: April 2015
View articletitled, Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping
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Journal Articles

Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

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R. L. Chu (朱瑞霖), T. H. Chiang (江宗鴻), W. J. Hsueh (薛惟仁), K. H. Chen (陳冠雄), K. Y. Lin (林耕雍), G. J. Brown, J. I. Chyi (綦振瀛), J. Kwo (郭瑞年), M. Hong (洪銘輝)
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 182106 (2014)
https://doi.org/10.1063/1.4901100
Published: November 2014
View articletitled, Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
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Journal Articles

Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures

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H. Y. Hung, T. H. Chiang, B. Z. Syu, Y. T. Fanchiang, J. G. Lin, S. F. Lee, M. Hong, J. Kwo
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 152413 (2014)
https://doi.org/10.1063/1.4898781
Published: October 2014
View articletitled, Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures
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Includes: Supplementary data
Journal Articles

High-pressure behavior of amorphous selenium from ultrasonic measurements and Raman spectroscopy

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Z. He, Z. G. Wang, H. Y. Zhu, X. R. Liu, J. P. Peng, S. M. Hong
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 011901 (2014)
https://doi.org/10.1063/1.4887005
Published: July 2014
View articletitled, High-pressure behavior of amorphous selenium from ultrasonic measurements and Raman spectroscopy
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Journal Articles

Control carrier recombination of multi-scale textured black silicon surface for high performance solar cells

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M. Hong, G. D. Yuan, Y. Peng, H. Y. Chen, Y. Zhang, Z. Q. Liu, J. X. Wang, B. Cai, Y. M. Zhu, Y. Chen, J. H. Liu, J. M. Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 253902 (2014)
https://doi.org/10.1063/1.4884899
Published: June 2014
View articletitled, Control carrier recombination of multi-scale textured black silicon surface for high performance solar cells
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Journal Articles

Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

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R. L. Chu (朱瑞霖), Y. C. Liu (劉有騏), W. C. Lee (李威縉), T. D. Lin (林宗達), M. L. Huang (黃懋霖), T. W. Pi (皮敦文), J. Kwo (郭瑞年), M. Hong (洪銘輝)
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 202102 (2014)
https://doi.org/10.1063/1.4879022
Published: May 2014
View articletitled, Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)
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