1-20 of 91
M. Heyns
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Low dephasing and robust micromagnet designs for silicon spin qubits

Available to Purchase
N. I. Dumoulin Stuyck, F. A. Mohiyaddin, R. Li, M. Heyns, B. Govoreanu, I. P. Radu
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 094001 (2021)
https://doi.org/10.1063/5.0059939
Published: August 2021
View articletitled, Low dephasing and robust micromagnet designs for silicon spin qubits
Open the PDF for Low dephasing and robust micromagnet designs for silicon spin qubits in another window
Includes: Supplementary data
Journal Articles

First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2

Editor’s PickOpen Access
Md Nur K Alam, S. Clima, B. J. O'Sullivan, B. Kaczer, G. Pourtois, M. Heyns, J. Van Houdt
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 084102 (2021)
https://doi.org/10.1063/5.0033957
Published: February 2021
View articletitled, First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2
Open the PDF for First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2 in another window
Journal Articles

Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies

Available to Purchase
D. Claes, J. Franco, N. Collaert, D. Linten, M. Heyns
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 104101 (2020)
https://doi.org/10.1063/5.0006110
Published: September 2020
View articletitled, Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies
Open the PDF for Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies in another window
Journal Articles

Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature

Available to Purchase
B. Groven, D. Claes, A. Nalin Mehta, H. Bender, W. Vandervorst, M. Heyns, M. Caymax, I. Radu, A. Delabie
Journal: The Journal of Chemical Physics
J. Chem. Phys. 150, 104703 (2019)
https://doi.org/10.1063/1.5048346
Published: March 2019
View articletitled, Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature
Open the PDF for Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature in another window
Includes: Supplementary data
Journal Articles

Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

Available to Purchase
S. Gupta, E. Simoen, R. Loo, Q. Smets, A. S. Verhulst, J. Lauwaert, H. Vrielinck, M. Heyns
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 232101 (2018)
https://doi.org/10.1063/1.5058201
Published: December 2018
View articletitled, Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra
Open the PDF for Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra in another window
Journal Articles

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

Available to Purchase
S. Gupta, Y. Shimura, O. Richard, B. Douhard, E. Simoen, H. Bender, O. Nakatsuka, S. Zaima, R. Loo, M. Heyns
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 192103 (2018)
https://doi.org/10.1063/1.5048683
Published: November 2018
View articletitled, Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si
Open the PDF for Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si in another window
Journal Articles

MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates

Available to Purchase
S. El Kazzi, W. Mortelmans, T. Nuytten, J. Meersschaut, P. Carolan, L. Landeloos, T. Conard, I. Radu, M. Heyns, C. Merckling
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 135702 (2018)
https://doi.org/10.1063/1.5008933
Published: April 2018
View articletitled, MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates
Open the PDF for MoS2 synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates in another window
Journal Articles

Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements

Available to Purchase
Quentin Smets, Anne S. Verhulst, Salim El Kazzi, Devin Verreck, Olivier Richard, Hugo Bender, Nadine Collaert, Anda Mocuta, Aaron Thean, Marc M. Heyns
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 072101 (2015)
https://doi.org/10.1063/1.4928761
Published: August 2015
View articletitled, Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements
Open the PDF for Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements in another window
Journal Articles

Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1−xSnx films

Available to Purchase
F. Gencarelli, D. Grandjean, Y. Shimura, B. Vincent, D. Banerjee, A. Vantomme, W. Vandervorst, R. Loo, M. Heyns, K. Temst
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 095702 (2015)
https://doi.org/10.1063/1.4913856
Published: March 2015
View articletitled, Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1−xSnx films
Open the PDF for Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1−xSnx films in another window
Journal Articles

Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Available to Purchase
Kuo-Hsing Kao, Anne S. Verhulst, Rita Rooyackers, Bastien Douhard, Joris Delmotte, Hugo Bender, Olivier Richard, Wilfried Vandervorst, Eddy Simoen, Andriy Hikavyy, Roger Loo, Kai Arstila, Nadine Collaert, Aaron Thean, Marc M. Heyns, Kristin De Meyer
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 214506 (2014)
https://doi.org/10.1063/1.4903288
Published: December 2014
View articletitled, Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors
Open the PDF for Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors in another window
Journal Articles

Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

Available to Purchase
Quentin Smets, Anne S. Verhulst, Koen Martens, Han Chung Lin, Salim El Kazzi, Devin Verreck, Eddy Simoen, Nadine Collaert, Aaron Thean, Jean-Pierre Raskin, Marc M. Heyns
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 203507 (2014)
https://doi.org/10.1063/1.4902117
Published: November 2014
View articletitled, Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification
Open the PDF for Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification in another window
Journal Articles

InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models

Available to Purchase
Quentin Smets, Devin Verreck, Anne S. Verhulst, Rita Rooyackers, Clément Merckling, Maarten Van De Put, Eddy Simoen, Wilfried Vandervorst, Nadine Collaert, Voon Y. Thean, Bart Sorée, Guido Groeseneken, Marc M. Heyns
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 184503 (2014)
https://doi.org/10.1063/1.4875535
Published: May 2014
View articletitled, InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models
Open the PDF for InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models in another window
Journal Articles

Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

Available to Purchase
C. Merckling, N. Waldron, S. Jiang, W. Guo, N. Collaert, M. Caymax, E. Vancoille, K. Barla, A. Thean, M. Heyns, W. Vandervorst
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 023710 (2014)
https://doi.org/10.1063/1.4862044
Published: January 2014
View articletitled, Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
Open the PDF for Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering in another window
Journal Articles

Evolution of (001) and (111) facets for selective epitaxial growth inside submicron trenches

Available to Purchase
S. Jiang, C. Merckling, W. Guo, N. Waldron, M. Caymax, W. Vandervorst, M. Seefeldt, M. Heyns
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 023517 (2014)
https://doi.org/10.1063/1.4861416
Published: January 2014
View articletitled, Evolution of (001) and (111) facets for selective epitaxial growth inside submicron trenches
Open the PDF for Evolution of (001) and (111) facets for selective epitaxial growth inside submicron trenches in another window
Journal Articles

Graphene as anode electrode for colloidal quantum dots based light emitting diodes

Available to Purchase
Alexander V. Klekachev, Sergey N. Kuznetsov, Inge Asselberghs, Mirco Cantoro, Jeong Hun Mun, Byung Jin Cho, André L. Stesmans, Marc M. Heyns, Stefan De Gendt
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 043124 (2013)
https://doi.org/10.1063/1.4816745
Published: July 2013
View articletitled, Graphene as anode electrode for colloidal quantum dots based light emitting diodes
Open the PDF for Graphene as anode electrode for colloidal quantum dots based light emitting diodes in another window
Includes: Supplementary data
Journal Articles

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Available to Purchase
C. Merckling, N. Waldron, S. Jiang, W. Guo, O. Richard, B. Douhard, A. Moussa, D. Vanhaeren, H. Bender, N. Collaert, M. Heyns, A. Thean, M. Caymax, W. Vandervorst
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 033708 (2013)
https://doi.org/10.1063/1.4815959
Published: July 2013
View articletitled, Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique
Open the PDF for Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique in another window
Journal Articles

The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

Available to Purchase
K. Martens, I. P. Radu, S. Mertens, X. Shi, L. Nyns, S. Cosemans, P. Favia, H. Bender, T. Conard, M. Schaekers, S. De Gendt, V. Afanas'ev, J. A. Kittl, M. Heyns, M. Jurczak
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 124501 (2012)
https://doi.org/10.1063/1.4767473
Published: December 2012
View articletitled, The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance
Open the PDF for The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance in another window
Includes: Supplementary data
Journal Articles

Time-resolved monitoring of cavitation activity in megasonic cleaning systems

Available to Purchase
M. Hauptmann, S. Brems, H. Struyf, P. Mertens, M. Heyns, S. De Gendt, C. Glorieux
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 83, 034904 (2012)
https://doi.org/10.1063/1.3697710
Published: March 2012
View articletitled, Time-resolved monitoring of cavitation activity in megasonic cleaning systems
Open the PDF for Time-resolved monitoring of cavitation activity in megasonic cleaning systems in another window
Journal Articles

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Available to Purchase
B. Vincent, F. Gencarelli, H. Bender, C. Merckling, B. Douhard, D. H. Petersen, O. Hansen, H. H. Henrichsen, J. Meersschaut, W. Vandervorst, M. Heyns, R. Loo, M. Caymax
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 152103 (2011)
https://doi.org/10.1063/1.3645620
Published: October 2011
View articletitled, Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
Open the PDF for Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition in another window
Journal Articles

Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Available to Purchase
L. K. Chu, C. Merckling, A. Alian, J. Dekoster, J. Kwo, M. Hong, M. Caymax, M. Heyns
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 042908 (2011)
https://doi.org/10.1063/1.3617436
Published: July 2011
View articletitled, Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
Open the PDF for Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics in another window