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Journal Articles

Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

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V. Lopes-Oliveira, L. K. S. Herval, V. Orsi Gordo, D. F. Cesar, M. P. F. de Godoy, Y. Galvão Gobato, M. Henini, A. Khatab, M. Sadeghi, S. Wang, M. Schmidbauer
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 233703 (2014)
https://doi.org/10.1063/1.4904357
Published: December 2014
View articletitled, Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
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Journal Articles

Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

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I. T. Awan, H. V. A. Galeti, Y. Galvão Gobato, M. J. S. P. Brasil, D. Taylor, M. Henini
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 054506 (2014)
https://doi.org/10.1063/1.4891996
Published: August 2014
View articletitled, Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes
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Journal Articles

Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing

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Ł. Gelczuk, R. Kudrawiec, M. Henini
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 013705 (2014)
https://doi.org/10.1063/1.4886856
Published: July 2014
View articletitled, Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing
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Journal Articles

Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers

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J. A. Steele, R. A. Lewis, M. Henini, O. M. Lemine, A. Alkaoud
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 193516 (2013)
https://doi.org/10.1063/1.4831947
Published: November 2013
View articletitled, Raman scattering studies of strain effects in (100) and (311)B GaAs1−xBix epitaxial layers
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Journal Articles

Correlations between the band structure, activation energies of electron traps, and photoluminescence in n-type GaNAs layers

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R. Kudrawiec, M. Latkowska, M. Welna, J. Misiewicz, M. Shafi, R. H. Mari, M. Henini, W. Walukiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 082109 (2012)
https://doi.org/10.1063/1.4747504
Published: August 2012
View articletitled, Correlations between the band structure, activation energies of electron traps, and photoluminescence in n-type GaNAs layers
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Journal Articles

Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques

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J. F. Felix, M. Aziz, D. L. da Cunha, K. F. Seidel, I. A. Hümmelgen, W. M. de Azevedo, E. F. da Silva, Jr., D. Taylor, M. Henini
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 014505 (2012)
https://doi.org/10.1063/1.4733569
Published: July 2012
View articletitled, Investigation of deep-level defects in conductive polymer on n-type 4H- and 6H-silicon carbide substrates using I-V and deep level transient spectroscopy techniques
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Journal Articles

Unusual broadening of E and E + ΔSO transitions in GaAsBi studied by electromodulation spectroscopy

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R. Kudrawiec, J. Kopaczek, P. Sitarek, J. Misiewicz, M. Henini, S. V. Novikov
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 066103 (2012)
https://doi.org/10.1063/1.3692763
Published: March 2012
View articletitled, Unusual broadening of E and E + ΔSO transitions in GaAsBi studied by electromodulation spectroscopy
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Journal Articles

Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

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R. Oliva, J. Ibáñez, R. Cuscó, R. Kudrawiec, J. Serafinczuk, O. Martínez, J. Jiménez, M. Henini, C. Boney, A. Bensaoula, L. Artús
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 063502 (2012)
https://doi.org/10.1063/1.3693579
Published: March 2012
View articletitled, Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN epilayers (0.25 &lt; x &lt; 0.75) grown by molecular beam epitaxy
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Journal Articles

Ultrafast Acoustic Gating of Photocurrent in Nanodevices With a Quantum Well

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D. Moss, A. V. Akimov, B. A. Glavin, O. Makarovsky, R. P. Campion, M. Henini, C. T. Foxon, L. Eaves, A. J. Kent
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 271–272 (2011)
https://doi.org/10.1063/1.3666358
Published: December 2011
View articletitled, Ultrafast Acoustic Gating of Photocurrent in Nanodevices With a Quantum Well
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Journal Articles

Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy

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M. Shafi, R. H. Mari, A. Khatab, M. Henini, A. Polimeni, M. Capizzi, M. Hopkinson
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 124508 (2011)
https://doi.org/10.1063/1.3664823
Published: December 2011
View articletitled, Deep levels in H-irradiated GaAs1-xNx (x &lt; 0.01) grown by molecular beam epitaxy
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Journal Articles

Microwave power generation by magnetic superlattices

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S. Littlejohn, A. Nogaret, S. R. Davies, M. Henini, H. E. Beere, D. A. Ritchie
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 242107 (2011)
https://doi.org/10.1063/1.3670400
Published: December 2011
View articletitled, Microwave power generation by magnetic superlattices
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Journal Articles

Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes

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Y. Galvão Gobato, H. V. A. Galeti, L. F. dos Santos, V. López-Richard, D. F. Cesar, G. E. Marques, M. J. S. P. Brasil, M. Orlita, J. Kunc, D. K. Maude, M. Henini, R. J. Airey
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 233507 (2011)
https://doi.org/10.1063/1.3668087
Published: December 2011
View articletitled, Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes
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Journal Articles

Thermal quenching of single localized excitons in GaInNAs layers

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M. Latkowska, R. Kudrawiec, G. Sęk, J. Misiewicz, J. Ibáñez, M. Henini, M. Hopkinson
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 131903 (2011)
https://doi.org/10.1063/1.3571287
Published: March 2011
View articletitled, Thermal quenching of single localized excitons in GaInNAs layers
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Journal Articles

Distribution of bismuth atoms in epitaxial GaAsBi

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D. L. Sales, E. Guerrero, J. F. Rodrigo, P. L. Galindo, A. Yáñez, M. Shafi, A. Khatab, R. H. Mari, M. Henini, S. Novikov, M. F. Chisholm, S. I. Molina
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 101902 (2011)
https://doi.org/10.1063/1.3562376
Published: March 2011
View articletitled, Distribution of bismuth atoms in epitaxial GaAsBi
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Journal Articles

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

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J. Ibáñez, R. Oliva, M. De la Mare, M. Schmidbauer, S. Hernández, P. Pellegrino, D. J. Scurr, R. Cuscó, L. Artús, M. Shafi, R. H. Mari, M. Henini, Q. Zhuang, A. Godenir, A. Krier
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 103504 (2010)
https://doi.org/10.1063/1.3509149
Published: November 2010
View articletitled, Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
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Journal Articles

Cyclotron resonance of two-dimensional electron system affected by neighboring quantum dot layer

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K. Takehana, Y. Imanaka, T. Takamasu, M. Henini
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 193110 (2010)
https://doi.org/10.1063/1.3430062
Published: May 2010
View articletitled, Cyclotron resonance of two-dimensional electron system affected by neighboring quantum dot layer
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Journal Articles

The Absence Of The Rashba Spin‐Splitting In Undoped Asymmetric Quantum Wells

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P. S. Eldridge, W. J. H. Leyland, J. D. Mar, P. G. Lagoudakis, R. Winkler, O. Z. Karimov, M. Henini, D. Taylor, R. T. Phillips, R. T. Harley
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1199, 397–398 (2010)
https://doi.org/10.1063/1.3295469
Published: January 2010
View articletitled, The Absence Of The Rashba Spin‐Splitting In Undoped Asymmetric Quantum Wells
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Journal Articles

Optical Measurement Of The Rashba Coefficient In GaAs/AlGaAs Quantum Wells

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P. S. Eldridge, W. J. H. Leyland, P. G. Lagoudakis, O. Z. Karimov, M. Henini, D. Taylor, R. T. Phillips, R. T. Harley
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1199, 395–396 (2010)
https://doi.org/10.1063/1.3295468
Published: January 2010
View articletitled, Optical Measurement Of The Rashba Coefficient In GaAs/AlGaAs Quantum Wells
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Journal Articles

Photoinduced Anomalous Hall Effect in 2‐Dimensional Hole Gases

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D. A. Vasyukov, A. S. Plaut, A. H. MacDonald, M. Henini, L. N. Pfeiffer, K. W. West
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1199, 449–450 (2010)
https://doi.org/10.1063/1.3295499
Published: January 2010
View articletitled, Photoinduced Anomalous Hall Effect in 2‐Dimensional Hole Gases
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Journal Articles

Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence

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R. Kudrawiec, M. Syperek, P. Poloczek, J. Misiewicz, R. H. Mari, M. Shafi, M. Henini, Y. Galvão Gobato, S. V. Novikov, J. Ibáñez, M. Schmidbauer, S. I. Molina
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 023518 (2009)
https://doi.org/10.1063/1.3168429
Published: July 2009
View articletitled, Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
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