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M. Grundmann
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Journal Articles

Retraction: “Dependence of structural and optical properties of In0.23Ga0.77As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties” [J. Vac. Sci. Technol. B 8 , 751–757 (1990)]

M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J. N. Miller
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 063402 (2023)
https://doi.org/10.1116/6.0003220
Published: November 2023
View article titled, Retraction: “Dependence of structural and optical properties of In<sub>0.23</sub>Ga<sub>0.77</sub>As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties” [J. Vac. Sci. Technol. B 8 , 751–757 (1990)]
Open the PDF for Retraction: “Dependence of structural and optical properties of In<sub>0.23</sub>Ga<sub>0.77</sub>As/GaAs quantum wells on misfit dislocations: Different critical thickness for dislocation generation and degradation of optical properties” [J. Vac. Sci. Technol. B 8 , 751–757 (1990)] in another window
Journal Articles

Retraction: “Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates” [Appl. Phys. Lett. 58 , 2090 (1991)]

M. Grundmann, J. Christen, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 259901 (2023)
https://doi.org/10.1063/5.0146966
Published: June 2023
View article titled, Retraction: “Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates” [Appl. Phys. Lett. 58 , 2090 (1991)]
Open the PDF for Retraction: “Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates” [Appl. Phys. Lett. 58 , 2090 (1991)] in another window
Journal Articles

Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films

Editor’s Pick
S. Köpp, C. Petersen, D. Splith, M. Grundmann, H. von Wenckstern
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043411 (2023)
https://doi.org/10.1116/6.0002651
Published: June 2023
View article titled, Properties of Schottky barrier diodes on heteroeptixial <em>α</em>-<em>Ga</em><sub>2</sub>O<sub>3</sub> thin films
Open the PDF for Properties of Schottky barrier diodes on heteroeptixial <em>α</em>-<em>Ga</em><sub>2</sub>O<sub>3</sub> thin films in another window
Includes: Supplementary data
Journal Articles

Raman tensor determination of transparent uniaxial crystals and their thin films—a-plane GaN as exemplary case

R. Hildebrandt, C. Sturm, M. Wieneke, A. Dadgar, M. Grundmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 121109 (2021)
https://doi.org/10.1063/5.0060198
Published: September 2021
View article titled, Raman tensor determination of transparent uniaxial crystals and their thin films—a-plane GaN as exemplary case
Open the PDF for Raman tensor determination of transparent uniaxial crystals and their thin films—a-plane GaN as exemplary case in another window
Includes: Supplementary data
Journal Articles

Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy

M. Kneiß, D. Splith, P. Schlupp, A. Hassa, H. von Wenckstern, M. Lorenz, M. Grundmann
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 084502 (2021)
https://doi.org/10.1063/5.0056630
Published: August 2021
View article titled, Realization of highly rectifying Schottky barrier diodes and <em>pn</em> heterojunctions on <em>κ</em>-Ga<sub>2</sub>O<sub>3</sub> by overcoming the conductivity anisotropy
Open the PDF for Realization of highly rectifying Schottky barrier diodes and <em>pn</em> heterojunctions on <em>κ</em>-Ga<sub>2</sub>O<sub>3</sub> by overcoming the conductivity anisotropy in another window
Includes: Supplementary data
Journal Articles

Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical properties

P. John, M. Al Khalfioui, C. Deparis, A. Welk, C. Lichtensteiger, R. Bachelet, G. Saint-Girons, H. Rotella, M. Hugues, M. Grundmann, J. Zúñiga-Pérez
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 065104 (2021)
https://doi.org/10.1063/5.0057307
Published: August 2021
View article titled, Epitaxial Zn<sub>3</sub>N<sub>2</sub> thin films by molecular beam epitaxy: Structural, electrical, and optical properties
Open the PDF for Epitaxial Zn<sub>3</sub>N<sub>2</sub> thin films by molecular beam epitaxy: Structural, electrical, and optical properties in another window
Journal Articles

Evidence for oxygen being a dominant shallow acceptor in p-type CuI

P. Storm, S. Gierth, S. Selle, M. S. Bar, H. von Wenckstern, M. Grundmann, M. Lorenz
Journal: APL Materials
APL Mater. 9, 051101 (2021)
https://doi.org/10.1063/5.0047723
Published: April 2021
View article titled, Evidence for oxygen being a dominant shallow acceptor in <em>p</em>-type CuI
Open the PDF for Evidence for oxygen being a dominant shallow acceptor in <em>p</em>-type CuI in another window
Includes: Supplementary data
Journal Articles

Tuning material properties of amorphous zinc oxynitride thin films by magnesium addition

A. Welk, A. Reinhardt, O. Herrfurth, T. Schultz, H. von Wenckstern, N. Koch, M. Grundmann
Journal: APL Materials
APL Mater. 9, 021120 (2021)
https://doi.org/10.1063/5.0035147
Published: February 2021
View article titled, Tuning material properties of amorphous zinc oxynitride thin films by magnesium addition
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Includes: Supplementary data
Journal Articles

Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)2O3 thin films from pulsed laser deposition at 1000 °C on r-plane Al2O3

M. Grundmann, T. Stralka, M. Lorenz
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 242102 (2020)
https://doi.org/10.1063/5.0030675
Published: December 2020
View article titled, Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)<sub>2</sub>O<sub>3</sub> thin films from pulsed laser deposition at 1000 °C on r-plane Al<sub>2</sub>O<sub>3</sub>
Open the PDF for Epitaxial growth and strain relaxation of corundum-phase (Al,Ga)<sub>2</sub>O<sub>3</sub> thin films from pulsed laser deposition at 1000 °C on r-plane Al<sub>2</sub>O<sub>3</sub> in another window
Journal Articles

Control of magnetic properties in spinel ZnFe2O4 thin films through intrinsic defect manipulation

V. Zviagin, C. Sturm, P. D. Esquinazi, M. Grundmann, R. Schmidt-Grund
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 165702 (2020)
https://doi.org/10.1063/5.0019712
Published: October 2020
View article titled, Control of magnetic properties in spinel ZnFe<sub>2</sub>O<sub>4</sub> thin films through intrinsic defect manipulation
Open the PDF for Control of magnetic properties in spinel ZnFe<sub>2</sub>O<sub>4</sub> thin films through intrinsic defect manipulation in another window
Journal Articles

High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition

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P. Storm, M. S. Bar, G. Benndorf, S. Selle, C. Yang, H. von Wenckstern, M. Grundmann, M. Lorenz
Journal: APL Materials
APL Mater. 8, 091115 (2020)
https://doi.org/10.1063/5.0021781
Published: September 2020
View article titled, High mobility, highly transparent, smooth, <em>p</em>-type CuI thin films grown by pulsed laser deposition
Open the PDF for High mobility, highly transparent, smooth, <em>p</em>-type CuI thin films grown by pulsed laser deposition in another window
Includes: Supplementary data
Journal Articles

Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates

P. Schlupp, S. Vogt, H. von Wenckstern, M. Grundmann
Journal: APL Materials
APL Mater. 8, 061112 (2020)
https://doi.org/10.1063/1.5143217
Published: June 2020
View article titled, Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates
Open the PDF for Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates in another window
Includes: Supplementary data
Journal Articles

Growth, structural and optical properties of coherent κ-(AlxGa1−x)2O3/κ-Ga2O3 quantum well superlattice heterostructures

M. Kneiß, P. Storm, A. Hassa, D. Splith, H. von Wenckstern, M. Lorenz, M. Grundmann
Journal: APL Materials
APL Mater. 8, 051112 (2020)
https://doi.org/10.1063/5.0007137
Published: May 2020
View article titled, Growth, structural and optical properties of coherent <em>κ</em>-(Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>/<em>κ</em>-Ga<sub>2</sub>O<sub>3</sub> quantum well superlattice heterostructures
Open the PDF for Growth, structural and optical properties of coherent <em>κ</em>-(Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>/<em>κ</em>-Ga<sub>2</sub>O<sub>3</sub> quantum well superlattice heterostructures in another window
Includes: Supplementary data
Journal Articles

Anisotropic strain relaxation through prismatic and basal slip in α -(Al, Ga)2O3 on R-plane Al2O3

M. Grundmann, M. Lorenz
Journal: APL Materials
APL Mater. 8, 021108 (2020)
https://doi.org/10.1063/1.5144744
Published: February 2020
View article titled, Anisotropic strain relaxation through prismatic and basal slip in α -(Al, Ga)<sub>2</sub>O<sub>3</sub> on R-plane Al<sub>2</sub>O<sub>3</sub>
Open the PDF for Anisotropic strain relaxation through prismatic and basal slip in α -(Al, Ga)<sub>2</sub>O<sub>3</sub> on R-plane Al<sub>2</sub>O<sub>3</sub> in another window
Includes: Supplementary data
Journal Articles

Solubility limit and material properties of a κ -(Alx Ga 1 − x )2O3 thin film with a lateral cation gradient on (00.1)Al2O3 by tin-assisted PLD

A. Hassa, C. Sturm, M. Kneiß, D. Splith, H. von Wenckstern, T. Schultz, N. Koch, M. Lorenz, M. Grundmann
Journal: APL Materials
APL Mater. 8, 021103 (2020)
https://doi.org/10.1063/1.5141041
Published: February 2020
View article titled, Solubility limit and material properties of a κ -(Al<sub><em>x</em></sub> Ga 1 − x )<sub>2</sub>O<sub>3</sub> thin film with a lateral cation gradient on (00.1)Al<sub>2</sub>O<sub>3</sub> by tin-assisted PLD
Open the PDF for Solubility limit and material properties of a κ -(Al<sub><em>x</em></sub> Ga 1 − x )<sub>2</sub>O<sub>3</sub> thin film with a lateral cation gradient on (00.1)Al<sub>2</sub>O<sub>3</sub> by tin-assisted PLD in another window
Journal Articles

Epitaxial κ-(AlxGa1−x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD

Editor’s Pick
P. Storm, M. Kneiß, A. Hassa, T. Schultz, D. Splith, H. von Wenckstern, N. Koch, M. Lorenz, M. Grundmann
Journal: APL Materials
APL Mater. 7, 111110 (2019)
https://doi.org/10.1063/1.5124231
Published: November 2019
View article titled, Epitaxial <em>κ</em>-(Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> thin films and heterostructures grown by tin-assisted VCCS-PLD
Open the PDF for Epitaxial <em>κ</em>-(Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> thin films and heterostructures grown by tin-assisted VCCS-PLD in another window
Includes: Supplementary data
Journal Articles

Femtosecond-time-resolved imaging of the dielectric function of ZnO in the visible to near-IR spectral range

Editor’s Pick
O. Herrfurth, T. Pflug, M. Olbrich, M. Grundmann, A. Horn, R. Schmidt-Grund
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 212103 (2019)
https://doi.org/10.1063/1.5128069
Published: November 2019
View article titled, Femtosecond-time-resolved imaging of the dielectric function of ZnO in the visible to near-IR spectral range
Open the PDF for Femtosecond-time-resolved imaging of the dielectric function of ZnO in the visible to near-IR spectral range in another window
Includes: Supplementary data
Journal Articles

Epitaxial stabilization of single phase κ-(InxGa1−x)2O3 thin films up to x = 0.28 on c-sapphire and κ-Ga2O3(001) templates by tin-assisted VCCS-PLD

Editor’s Pick
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, M. Lorenz, M. Grundmann
Journal: APL Materials
APL Mater. 7, 101102 (2019)
https://doi.org/10.1063/1.5120578
Published: October 2019
View article titled, Epitaxial stabilization of single phase <em>κ</em>-(In<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> thin films up to <em>x</em> = 0.28 on c-sapphire and <em>κ</em>-Ga<sub>2</sub>O<sub>3</sub>(001) templates by tin-assisted VCCS-PLD
Open the PDF for Epitaxial stabilization of single phase <em>κ</em>-(In<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> thin films up to <em>x</em> = 0.28 on c-sapphire and <em>κ</em>-Ga<sub>2</sub>O<sub>3</sub>(001) templates by tin-assisted VCCS-PLD in another window
Includes: Supplementary data
Journal Articles

Erratum: “Structural, optical, and electrical properties of orthorhombic κ -(InxGa1−x)2O3 thin films” [APL Mater. 7, 022525 (2019)]

A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiß, V. Prozheeva, M. Grundmann
Journal: APL Materials
APL Mater. 7, 079901 (2019)
https://doi.org/10.1063/1.5099518
Published: July 2019
View article titled, Erratum: “Structural, optical, and electrical properties of orthorhombic κ -(In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films” [APL Mater. 7, 022525 (2019)]
Open the PDF for Erratum: “Structural, optical, and electrical properties of orthorhombic κ -(In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> thin films” [APL Mater. 7, 022525 (2019)] in another window
Journal Articles

Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

S. Prucnal, Y. Berencén, M. Wang, L. Rebohle, R. Kudrawiec, M. Polak, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Grenzer, M. Turek, A. Droździel, K. Pyszniak, J. Zuk, M. Helm, W. Skorupa, S. Zhou
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 203105 (2019)
https://doi.org/10.1063/1.5082889
Published: May 2019
View article titled, Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing
Open the PDF for Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing in another window