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Journal Articles

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

M. Hrytsaienko, M. Gallart, M. Ziegler, O. Crégut, S. Tamariz, R. Butté, N. Grandjean, B. Hönerlage, P. Gilliot
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 054301 (2021)
https://doi.org/10.1063/5.0038733
Published: February 2021
View article titled, Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in <em>c</em>-plane GaN/AlN quantum dots emitting in the UV range
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Journal Articles

Optical gain observation on silicon nanocrystals embedded in silicon nitride under femtosecond pumping

B. M. Monroy, O. Crégut, M. Gallart, B. Hönerlage, P. Gilliot
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 261108 (2011)
https://doi.org/10.1063/1.3607276
Published: July 2011
View article titled, Optical gain observation on silicon nanocrystals embedded in silicon nitride under femtosecond pumping
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Journal Articles

Optical and spin coherence of excitons in zinc-blende GaN

C. Brimont, M. Gallart, O. Crégut, B. Hönerlage, P. Gilliot, D. Lagarde, A. Balocchi, T. Amand, X. Marie, S. Founta, H. Mariette
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 053514 (2009)
https://doi.org/10.1063/1.3197035
Published: September 2009
View article titled, Optical and spin coherence of excitons in zinc-blende GaN
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Journal Articles

Structural and photoluminescence properties of ZnO thin films prepared by sol-gel process

J. Petersen, C. Brimont, M. Gallart, O. Crégut, G. Schmerber, P. Gilliot, B. Hönerlage, C. Ulhaq-Bouillet, J. L. Rehspringer, C. Leuvrey, S. Colis, H. Aubriet, C. Becker, D. Ruch, A. Slaoui, A. Dinia
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 113539 (2008)
https://doi.org/10.1063/1.3021358
Published: December 2008
View article titled, Structural and photoluminescence properties of ZnO thin films prepared by sol-gel process
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Journal Articles

Propagation dependent exciton-spin dephasing and relaxation due to exchange interaction

H. Rahimpour Soleimani, T. Ostatnicky, S. Cronenberger, M. Gallart, P. Gilliot, B. Hönerlage
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 023705 (2006)
https://doi.org/10.1063/1.2214219
Published: July 2006
View article titled, Propagation dependent exciton-spin dephasing and relaxation due to exchange interaction
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Journal Articles

Direct electron- and hole-spin relaxation measurements in undoped piezoelectric CdTe quantum wells

H. Rahimpour Soleimani, S. Cronenberger, M. Gallart, P. Gilliot, J. Cibert, O. Crégut, B. Hönerlage, J.-P. Likforman
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 192104 (2005)
https://doi.org/10.1063/1.2126146
Published: November 2005
View article titled, Direct electron- and hole-spin relaxation measurements in undoped piezoelectric CdTe quantum wells
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Journal Articles

Time‐Resolved Optical‐Phonon Emission and Electron‐Hole Relaxation Dynamics in ZnCdTe Quantum Wells and Quantum Dots

P. Gilliot, S. Cronenberger, Y. Viale, M. Gallart, B. Hönerlage, K. Kheng, H. Mariette
Journal: AIP Conference Proceedings
AIP Conf. Proc. 772, 631–632 (2005)
https://doi.org/10.1063/1.1994265
Published: June 2005
View article titled, Time‐Resolved Optical‐Phonon Emission and Electron‐Hole Relaxation Dynamics in ZnCdTe Quantum Wells and Quantum Dots
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Journal Articles

Study of exciton-polariton spin dynamics

H. Rahimpour Soleimani, S. Cronenberger, O. Crégut, J.-P. Likforman, M. Gallart, T. Ostatnicky, P. Gilliot, B. Hönerlage
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 5263–5265 (2004)
https://doi.org/10.1063/1.1830080
Published: November 2004
View article titled, Study of exciton-polariton spin dynamics
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Journal Articles

Single photon emission from site-controlled pyramidal quantum dots

M. H. Baier, E. Pelucchi, E. Kapon, S. Varoutsis, M. Gallart, I. Robert-Philip, I. Abram
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 648–650 (2004)
https://doi.org/10.1063/1.1643533
Published: February 2004
View article titled, Single photon emission from site-controlled pyramidal quantum dots
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Journal Articles

Single photon emission from individual GaAs quantum dots

J. Hours, S. Varoutsis, M. Gallart, J. Bloch, I. Robert-Philip, A. Cavanna, I. Abram, F. Laruelle, J. M. Gérard
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 2206–2208 (2003)
https://doi.org/10.1063/1.1563050
Published: April 2003
View article titled, Single photon emission from individual GaAs quantum dots
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Journal Articles

Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes

P. Lefebvre, T. Taliercio, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 1538–1540 (2001)
https://doi.org/10.1063/1.1352664
Published: March 2001
View article titled, Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
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Journal Articles

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. Allègre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 1252–1254 (2001)
https://doi.org/10.1063/1.1351517
Published: February 2001
View article titled, High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
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Journal Articles

Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate

N. Grandjean, B. Damilano, J. Massies, G. Neu, M. Teissere, I. Grzegory, S. Porowski, M. Gallart, P. Lefebvre, B. Gil, M. Albrecht
Journal: Journal of Applied Physics
J. Appl. Phys. 88, 183–187 (2000)
https://doi.org/10.1063/1.373640
Published: July 2000
View article titled, Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate
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