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M. G. Lagally
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Journal Articles

Erratum: “The critical role of substrate disorder in valley splitting in Si quantum wells” [Appl. Phys. Lett. 112 , 243107 (2018)]

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Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson, T. J. Knapp, Thomas McJunkin, L. M. K. Vandersypen, Payam Amin, Nicole K. Thomas, James S. Clarke, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 049901 (2020)
https://doi.org/10.1063/1.5144986
Published: January 2020
View article titled, Erratum: “The critical role of substrate disorder in valley splitting in Si quantum wells” [Appl. Phys. Lett. 112 , 243107 (2018)]
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Journal Articles

The critical role of substrate disorder in valley splitting in Si quantum wells

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Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson, T. J. Knapp, Thomas McJunkin, L. M. K. Vandersypen, Payam Amin, Nicole K. Thomas, James S. Clarke, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 243107 (2018)
https://doi.org/10.1063/1.5033447
Published: June 2018
View article titled, The critical role of substrate disorder in valley splitting in Si quantum wells
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Includes: Supplementary data
Journal Articles

Rolling-based direct-transfer printing: A process for large-area transfer of micro- and nanostructures onto flexible substrates

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D. S. Grierson, F. S. Flack, M. G. Lagally, K. T. Turner
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 093103 (2016)
https://doi.org/10.1063/1.4961407
Published: September 2016
View article titled, Rolling-based direct-transfer printing: A process for large-area transfer of micro- and nanostructures onto flexible substrates
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Includes: Supplementary data
Journal Articles

Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

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J. A. Tilka, J. Park, Y. Ahn, A. Pateras, K. C. Sampson, D. E. Savage, J. R. Prance, C. B. Simmons, S. N. Coppersmith, M. A. Eriksson, M. G. Lagally, M. V. Holt, P. G. Evans
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 015304 (2016)
https://doi.org/10.1063/1.4955043
Published: July 2016
View article titled, Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures
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Journal Articles

Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

Open Access
J. Park, Y. Ahn, J. A. Tilka, K. C. Sampson, D. E. Savage, J. R. Prance, C. B. Simmons, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, M. V. Holt, P. G. Evans
Journal: APL Materials
APL Mater. 4, 066102 (2016)
https://doi.org/10.1063/1.4954054
Published: June 2016
View article titled, Electrode-stress-induced nanoscale disorder in Si quantum electronic devices
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Includes: Supplementary data
Journal Articles

Direct evidence of strain transfer for InAs island growth on compliant Si substrates

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L. A. B. Marçal, M.-I. Richard, R. Magalhães-Paniago, F. Cavallo, M. G. Lagally, O. G. Schmidt, T. Ü. Schülli, Ch. Deneke, Angelo Malachias
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 151905 (2015)
https://doi.org/10.1063/1.4918615
Published: April 2015
View article titled, Direct evidence of strain transfer for InAs island growth on compliant Si substrates
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Journal Articles

Excitation of a Si/SiGe quantum dot using an on-chip microwave antenna

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E. Kawakami, P. Scarlino, L. R. Schreiber, J. R. Prance, D. E. Savage, M. G. Lagally, M. A. Eriksson, L. M. K. Vandersypen
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 132410 (2013)
https://doi.org/10.1063/1.4821995
Published: September 2013
View article titled, Excitation of a Si/SiGe quantum dot using an on-chip microwave antenna
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Includes: Supplementary data
Journal Articles

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

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D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 213107 (2013)
https://doi.org/10.1063/1.4807768
Published: May 2013
View article titled, Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing
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Journal Articles

Charge sensing in a Si/SiGe quantum dot with a radio frequency superconducting single-electron transistor

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Mingyun Yuan, Zhen Yang, D. E. Savage, M. G. Lagally, M. A. Eriksson, A. J. Rimberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 142103 (2012)
https://doi.org/10.1063/1.4754827
Published: October 2012
View article titled, Charge sensing in a Si/SiGe quantum dot with a radio frequency superconducting single-electron transistor
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Journal Articles

Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

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Zhan Shi, C. B. Simmons, J. R. Prance, John King Gamble, Mark Friesen, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 233108 (2011)
https://doi.org/10.1063/1.3666232
Published: December 2011
View article titled, Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot
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Journal Articles

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

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Mingyun Yuan, Feng Pan, Zhen Yang, T. J. Gilheart, Fei Chen, D. E. Savage, M. G. Lagally, M. A. Eriksson, A. J. Rimberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 142104 (2011)
https://doi.org/10.1063/1.3572033
Published: April 2011
View article titled, Si/SiGe quantum dot with superconducting single-electron transistor charge sensor
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Journal Articles

Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

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Madhu Thalakulam, C. B. Simmons, B. M. Rosemeyer, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 183104 (2010)
https://doi.org/10.1063/1.3425892
Published: May 2010
View article titled, Fast tunnel rates in Si/SiGe one-electron single and double quantum dots
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Journal Articles

Single-electron quantum dot in Si ∕ Si Ge with integrated charge sensing

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C. B. Simmons, Madhu Thalakulam, Nakul Shaji, Levente J. Klein, Hua Qin, R. H. Blick, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 213103 (2007)
https://doi.org/10.1063/1.2816331
Published: November 2007
View article titled, Single-electron quantum dot in Si ∕ Si Ge with integrated charge sensing
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Journal Articles

Silicon on insulator for symmetry-converted growth

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Y. Fujikawa, Y. Yamada-Takamura, G. Yoshikawa, T. Ono, M. Esashi, P. P. Zhang, M. G. Lagally, T. Sakurai
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 243107 (2007)
https://doi.org/10.1063/1.2748099
Published: June 2007
View article titled, Silicon on insulator for symmetry-converted growth
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Journal Articles

Polymer light emitting diodes and poly(di- n -octylfluorene) thin films as fabricated with a microfluidics applicator

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H. Cheun, P. P. Rugheimer, B. J. Larson, P. Gopalan, M. G. Lagally, M. J. Winokur
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 073510 (2006)
https://doi.org/10.1063/1.2349467
Published: October 2006
View article titled, Polymer light emitting diodes and poly(di- n -octylfluorene) thin films as fabricated with a microfluidics applicator
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Journal Articles

Germanium hut nanostressors on freestanding thin silicon membranes

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P. G. Evans, D. S. Tinberg, M. M. Roberts, M. G. Lagally, Y. Xiao, B. Lai, Z. Cai
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 073112 (2005)
https://doi.org/10.1063/1.2031941
Published: August 2005
View article titled, Germanium hut nanostressors on freestanding thin silicon membranes
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Journal Articles

Template-directed carbon nanotube network using self-organized Si nanocrystals

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B. Yang, M. S. Marcus, D. G. Keppel, P. P. Zhang, Z. W. Li, B. J. Larson, D. E. Savage, J. M. Simmons, O. M. Castellini, M. A. Eriksson, M. G. Lagally
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 263107 (2005)
https://doi.org/10.1063/1.1952585
Published: June 2005
View article titled, Template-directed carbon nanotube network using self-organized Si nanocrystals
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Journal Articles

Mechanical stability of ultrathin Ge ∕ Si film on Si O 2 : The effect of Si ∕ Si O 2 interface

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Minghuang Huang, John A. Nairn, Feng Liu, M. G. Lagally
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 116108 (2005)
https://doi.org/10.1063/1.1926421
Published: June 2005
View article titled, Mechanical stability of ultrathin Ge ∕ Si film on Si O 2 : The effect of Si ∕ Si O 2 interface
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Journal Articles

Microfabricated strained substrates for Ge epitaxial growth

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P. G. Evans, P. P. Rugheimer, M. G. Lagally, C. H. Lee, A. Lal, Y. Xiao, B. Lai, Z. Cai
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 103501 (2005)
https://doi.org/10.1063/1.1894579
Published: April 2005
View article titled, Microfabricated strained substrates for Ge epitaxial growth
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Journal Articles

Quantitative analysis of electric force microscopy: The role of sample geometry

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Emma Tevaarwerk, D. G. Keppel, P. Rugheimer, M. G. Lagally, M. A. Eriksson
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 76, 053707 (2005)
https://doi.org/10.1063/1.1898183
Published: April 2005
View article titled, Quantitative analysis of electric force microscopy: The role of sample geometry
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