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Journal Articles

Spin-lattice relaxation processes of transition metal ions in a heavily cobalt doped ZnO: Phonon heating effect

D. V. Azamat, A. G. Badalyan, P. G. Baranov, M. Fanciulli, J. Lanc̆ok, M. Hrabovsky, L. Jastrabik, A. Dejneka
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 123903 (2019)
https://doi.org/10.1063/1.5088588
Published: September 2019
View article titled, Spin-lattice relaxation processes of transition metal ions in a heavily cobalt doped ZnO: Phonon heating effect
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Journal Articles

Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires

S. Selmo, R. Cecchini, S. Cecchi, C. Wiemer, M. Fanciulli, E. Rotunno, L. Lazzarini, M. Rigato, D. Pogany, A. Lugstein, M. Longo
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 213103 (2016)
https://doi.org/10.1063/1.4968510
Published: November 2016
View article titled, Low power phase change memory switching of ultra-thin In<sub>3</sub>Sb<sub>1</sub>Te<sub>2</sub> nanowires
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Journal Articles

Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices

S. Brivio, E. Covi, A. Serb, T. Prodromakis, M. Fanciulli, S. Spiga
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 133504 (2016)
https://doi.org/10.1063/1.4963675
Published: September 2016
View article titled, Experimental study of gradual/abrupt dynamics of HfO<sub>2</sub>-based memristive devices
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Includes: Supplementary data
Journal Articles

Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

R. Mantovan, S. Vangelista, C. Wiemer, A. Lamperti, G. Tallarida, E. Chikoidze, Y. Dumont, M. Fanciulli
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 115, 17D907 (2014)
https://doi.org/10.1063/1.4865774
Published: February 2014
View article titled, Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition
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Journal Articles

Interstitial Fe in MgO

T. E. Mølholt, R. Mantovan, H. P. Gunnlaugsson, A. Svane, H. Masenda, D. Naidoo, K. Bharuth-Ram, M. Fanciulli, H. P. Gislason, K. Johnston, G. Langouche, S. Ólafsson, R. Sielemann, G. Weyer, ISOLDE collaboration
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 023508 (2014)
https://doi.org/10.1063/1.4861403
Published: January 2014
View article titled, Interstitial Fe in MgO
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Journal Articles

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

P. Tsipas, S. Kassavetis, D. Tsoutsou, E. Xenogiannopoulou, E. Golias, S. A. Giamini, C. Grazianetti, D. Chiappe, A. Molle, M. Fanciulli, A. Dimoulas
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 251605 (2013)
https://doi.org/10.1063/1.4851239
Published: December 2013
View article titled, Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)
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Journal Articles

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

S. Spiga, R. Rao, L. Lamagna, C. Wiemer, G. Congedo, A. Lamperti, A. Molle, M. Fanciulli, F. Palma, F. Irrera
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 014107 (2012)
https://doi.org/10.1063/1.4731746
Published: July 2012
View article titled, Structural and electrical properties of atomic layer deposited Al-doped ZrO<sub>2</sub> films and of the interface with TaN electrode
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Journal Articles

Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon

G. Mazzeo, E. Prati, M. Belli, G. Leti, S. Cocco, M. Fanciulli, F. Guagliardo, G. Ferrari
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 213107 (2012)
https://doi.org/10.1063/1.4721433
Published: May 2012
View article titled, Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon
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Includes: Supplementary data
Journal Articles

The effect of a ferromagnetic Gd marker on the effective work function of Fe in contact with Al2O3/Si

A. V. Zenkevich, Yu. A. Matveyev, Yu. Yu. Lebedinskii, R. Mantovan, M. Fanciulli, S. Thiess, W. Drube
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 111, 07C506 (2012)
https://doi.org/10.1063/1.3672398
Published: February 2012
View article titled, The effect of a ferromagnetic Gd marker on the effective work function of Fe in contact with Al<sub>2</sub>O<sub>3</sub>/Si
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Journal Articles

Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge(001)

C. Wiemer, A. Debernardi, A. Lamperti, A. Molle, O. Salicio, L. Lamagna, M. Fanciulli
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 232907 (2011)
https://doi.org/10.1063/1.3666237
Published: December 2011
View article titled, Influence of lattice parameters on the dielectric constant of tetragonal ZrO<sub>2</sub> and La-doped ZrO<sub>2</sub> crystals in thin films deposited by atomic layer deposition on Ge(001)
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Journal Articles

Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

A. Molle, L. Lamagna, C. Grazianetti, G. Brammertz, C. Merckling, M. Caymax, S. Spiga, M. Fanciulli
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 193505 (2011)
https://doi.org/10.1063/1.3659688
Published: November 2011
View article titled, Reconstruction dependent reactivity of As-decapped In<sub>0.53</sub>Ga<sub>0.47</sub>As(001) surfaces and its influence on the electrical quality of the interface with Al<sub>2</sub>O<sub>3</sub> grown by atomic layer deposition
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Journal Articles

Fe/BaTiO3 interface: Band alignment and chemical properties

A. Zenkevich, R. Mantovan, M. Fanciulli, M. Minnekaev, Yu. Matveyev, Yu. Lebedinskii, S. Thiess, W. Drube
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 182905 (2011)
https://doi.org/10.1063/1.3657769
Published: November 2011
View article titled, Fe/BaTiO<sub>3</sub> interface: Band alignment and chemical properties
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Journal Articles

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

D. Ielmini, S. Spiga, F. Nardi, C. Cagli, A. Lamperti, E. Cianci, M. Fanciulli
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 034506 (2011)
https://doi.org/10.1063/1.3544499
Published: February 2011
View article titled, Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
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Journal Articles

Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack

A. Lamperti, E. Cianci, U. Russo, S. Spiga, O. Salicio, G. Congedo, M. Fanciulli
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01AE03 (2011)
https://doi.org/10.1116/1.3534024
Published: January 2011
View article titled, Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack
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Journal Articles

Evaluation of DyScO x as an alternative blocking dielectric in TANOS memories with Si 3 N 4 or Si-rich SiN charge trapping layers

G. Congedo, S. Spiga, U. Russo, A. Lamperti, O. Salicio, E. Cianci, M. Fanciulli
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01AE04 (2011)
https://doi.org/10.1116/1.3533765
Published: January 2011
View article titled, Evaluation of DyScO x as an alternative blocking dielectric in TANOS memories with Si 3 N 4 or Si-rich SiN charge trapping layers
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Journal Articles

O 3 -based atomic layer deposition of hexagonal La 2 O 3 films on Si(100) and Ge(100) substrates

L. Lamagna, C. Wiemer, M. Perego, S. N. Volkos, S. Baldovino, D. Tsoutsou, S. Schamm-Chardon, P. E. Coulon, M. Fanciulli
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 084108 (2010)
https://doi.org/10.1063/1.3499258
Published: October 2010
View article titled, O 3 -based atomic layer deposition of hexagonal La 2 O 3 films on Si(100) and Ge(100) substrates
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Journal Articles

Paramagnetism in Mn/Fe implanted ZnO

H. P. Gunnlaugsson, T. E. Mølholt, R. Mantovan, H. Masenda, D. Naidoo, W. B. Dlamini, R. Sielemann, K. Bharuth-Ram, G. Weyer, K. Johnston, G. Langouche, S. Ólafsson, H. P. Gíslason, Y. Kobayashi, Y. Yoshida, M. Fanciulli, ISOLDE Collaboration
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 142501 (2010)
https://doi.org/10.1063/1.3490708
Published: October 2010
View article titled, Paramagnetism in Mn/Fe implanted ZnO
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Journal Articles

Ultraviolet optical near-fields of microspheres imprinted in phase change films

J. Siegel, D. Puerto, J. Solis, F. J. García de Abajo, C. N. Afonso, M. Longo, C. Wiemer, M. Fanciulli, P. Kühler, M. Mosbacher, P. Leiderer
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 193108 (2010)
https://doi.org/10.1063/1.3428582
Published: May 2010
View article titled, Ultraviolet optical near-fields of microspheres imprinted in phase change films
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Journal Articles

Dielectric properties of Er − doped HfO 2   ( Er ∼ 15 % ) grown by atomic layer deposition for high- κ gate stacks

C. Wiemer, L. Lamagna, S. Baldovino, M. Perego, S. Schamm-Chardon, P. E. Coulon, O. Salicio, G. Congedo, S. Spiga, M. Fanciulli
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 182901 (2010)
https://doi.org/10.1063/1.3400213
Published: May 2010
View article titled, Dielectric properties of Er − doped HfO 2   ( Er ∼ 15 % ) grown by atomic layer deposition for high- κ gate stacks
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Journal Articles

Compact silicon double and triple dots realized with only two gates

M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer, M. Vinet, E. Prati, M. Belli, M. Fanciulli
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 242107 (2009)
https://doi.org/10.1063/1.3273857
Published: December 2009
View article titled, Compact silicon double and triple dots realized with only two gates
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