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Journal Articles

Concentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As

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H. L. Aldridge, Jr., A. G. Lind, M. E. Law, C. Hatem, K. S. Jones
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 042113 (2014)
https://doi.org/10.1063/1.4892079
Published: July 2014
View articletitled, Concentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As
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Journal Articles

Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors

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M. R. Holzworth, N. G. Rudawski, P. G. Whiting, S. J. Pearton, K. S. Jones, L. Lu, T. S. Kang, F. Ren, E. Patrick, M. E. Law
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 023503 (2013)
https://doi.org/10.1063/1.4813535
Published: July 2013
View articletitled, Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors
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Journal Articles

B segregation to grain boundaries and diffusion in polycrystalline Si with flash annealing

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S. Jin, K. S. Jones, M. E. Law, R. Camillo-Castillo
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 044508 (2012)
https://doi.org/10.1063/1.3688246
Published: February 2012
View articletitled, B segregation to grain boundaries and diffusion in polycrystalline Si with flash annealing
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Journal Articles

Interface stability in stressed solid-phase epitaxial growth

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S. Morarka, S. Jin, N. G. Rudawski, K. S. Jones, M. E. Law, R. G. Elliman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 041210 (2011)
https://doi.org/10.1116/1.3610172
Published: August 2011
View articletitled, Interface stability in stressed solid-phase epitaxial growth
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Journal Articles

Effect of n - and p -type dopants on patterned amorphous regrowth

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S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, R. G. Elliman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1F1–C1F5 (2010)
https://doi.org/10.1116/1.3207953
Published: March 2010
View articletitled, Effect of n - and p -type dopants on patterned amorphous regrowth
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Journal Articles

Stressed multidirectional solid-phase epitaxial growth of Si

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N. G. Rudawski, K. S. Jones, S. Morarka, M. E. Law, R. G. Elliman
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 081101 (2009)
https://doi.org/10.1063/1.3091395
Published: April 2009
View articletitled, Stressed multidirectional solid-phase epitaxial growth of Si
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Journal Articles

Modeling two-dimensional solid-phase epitaxial regrowth using level set methods

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S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, R. G. Elliman
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 053701 (2009)
https://doi.org/10.1063/1.3082086
Published: March 2009
View articletitled, Modeling two-dimensional solid-phase epitaxial regrowth using level set methods
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Journal Articles

Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals

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R. A. Camillo-Castillo, M. E. Law, K. S. Jones, R. Lindsay, K. Maex, B. J. Pawlak, S. McCoy
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 450–455 (2006)
https://doi.org/10.1116/1.2140003
Published: January 2006
View articletitled, Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals
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Journal Articles

Dislocation loops in silicon-germanium alloys: The source of interstitials

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R. T. Crosby, K. S. Jones, M. E. Law, L. Radic, P. E. Thompson, J. Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 192111 (2005)
https://doi.org/10.1063/1.2123389
Published: November 2005
View articletitled, Dislocation loops in silicon-germanium alloys: The source of interstitials
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Journal Articles

Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profiles

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R. A. Camillo-Castillo, M. E. Law, K. S. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 4939–4944 (2004)
https://doi.org/10.1063/1.1776624
Published: November 2004
View articletitled, Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profiles
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Journal Articles

Observation of fluorine-vacancy complexes in silicon

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P. J. Simpson, Z. Jenei, P. Asoka-Kumar, R. R. Robison, M. E. Law
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 1538–1540 (2004)
https://doi.org/10.1063/1.1784045
Published: August 2004
View articletitled, Observation of fluorine-vacancy complexes in silicon
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Journal Articles

{311} defect evolution in ion-implanted, relaxed Si 1−x Ge x

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Robert Crosby, K. S. Jones, M. E. Law, A. Nylandsted Larsen, J. Lundsgaard Hansen
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 468–470 (2004)
https://doi.org/10.1116/1.1619423
Published: February 2004
View articletitled, {311} defect evolution in ion-implanted, relaxed Si 1−x Ge x
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Journal Articles

Influence of low temperature preanneals on dopant and defect behavior for low energy Ge preamorphized silicon

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R. A. Camillo-Castillo, M. E. Law, K. S. Jones, L. M. Rubin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 312–316 (2004)
https://doi.org/10.1116/1.1627791
Published: February 2004
View articletitled, Influence of low temperature preanneals on dopant and defect behavior for low energy Ge preamorphized silicon
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Journal Articles

Fluorine-enhanced boron diffusion in amorphous silicon

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J. M. Jacques, L. S. Robertson, K. S. Jones, M. E. Law, Mike Rendon, Joe Bennett
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 3469–3471 (2003)
https://doi.org/10.1063/1.1576508
Published: May 2003
View articletitled, Fluorine-enhanced boron diffusion in amorphous silicon
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Journal Articles

Influence of the surface Si/buried oxide interface on extended defect evolution in silicon-on-insulator scaled to 300 Å

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A. F. Saavedra, J. Frazer, K. S. Jones, I. Avci, S. K. Earles, M. E. Law, E. C. Jones
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 20, 2243–2247 (2002)
https://doi.org/10.1116/1.1517410
Published: December 2002
View articletitled, Influence of the surface Si/buried oxide interface on extended defect evolution in silicon-on-insulator scaled to 300 Å
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Journal Articles

Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon

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L. S. Robertson, M. E. Law, K. S. Jones, L. M. Rubin, J. Jackson, P. Chi, D. S. Simons
Journal: Applied Physics Letters
Appl. Phys. Lett. 75, 3844–3846 (1999)
https://doi.org/10.1063/1.125475
Published: December 1999
View articletitled, Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon
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Journal Articles

Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron–interstitial cluster formation

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A. D. Lilak, S. K. Earles, M. E. Law, K. S. Jones
Journal: Applied Physics Letters
Appl. Phys. Lett. 74, 2038–2040 (1999)
https://doi.org/10.1063/1.123749
Published: April 1999
View articletitled, Evolution of {311} type defects in boron-doped structures: Experimental evidence of boron–interstitial cluster formation
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Journal Articles

Effect of surface proximity on end-of-range loop dissolution in silicon

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R. Raman, M. E. Law, V. Krishnamoorthy, K. S. Jones, S. B. Herner
Journal: Applied Physics Letters
Appl. Phys. Lett. 74, 1591–1593 (1999)
https://doi.org/10.1063/1.123626
Published: March 1999
View articletitled, Effect of surface proximity on end-of-range loop dissolution in silicon
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Journal Articles

Effect of the end-of-range loop layer depth on the evolution of {311} defects

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R. Raman, M. E. Law, V. Krishnamoorthy, K. S. Jones
Journal: Applied Physics Letters
Appl. Phys. Lett. 74, 700–702 (1999)
https://doi.org/10.1063/1.122992
Published: February 1999
View articletitled, Effect of the end-of-range loop layer depth on the evolution of {311} defects
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Journal Articles

Effect of the silicon/oxide interface on interstitials: Di-interstitial recombination

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M. E. Law, Y. M. Haddara, K. S. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 84, 3555–3560 (1998)
https://doi.org/10.1063/1.368530
Published: October 1998
View articletitled, Effect of the silicon/oxide interface on interstitials: Di-interstitial recombination
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