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Journal Articles

Single-domain epitaxial silicene on diboride thin films

A. Fleurence, T. G. Gill, R. Friedlein, J. T. Sadowski, K. Aoyagi, M. Copel, R. M. Tromp, C. F. Hirjibehedin, Y. Yamada-Takamura
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 151902 (2016)
https://doi.org/10.1063/1.4945370
Published: April 2016
View articletitled, Single-domain epitaxial silicene on diboride thin films
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Journal Articles

Medium energy ion scattering of Gr on SiC(0001) and Si(100)

M. Copel, S. Oida, A. Kasry, A. A. Bol, J. B. Hannon, R. M. Tromp
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 113103 (2011)
https://doi.org/10.1063/1.3565968
Published: March 2011
View articletitled, Medium energy ion scattering of Gr on SiC(0001) and Si(100)
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Journal Articles

Stability of terbium scandate on Si(100)

M. Copel, N. Bojarczuk, L. F. Edge, S. Guha
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 182901 (2010)
https://doi.org/10.1063/1.3513314
Published: November 2010
View articletitled, Stability of terbium scandate on Si(100)
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Journal Articles

Determination of band offsets, chemical bonding, and microstructure of the ( Tb x Sc 1 − x ) 2 O 3 / Si system

I. Geppert, M. Eizenberg, N. A. Bojarczuk, L. F. Edge, M. Copel, S. Guha
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 024105 (2010)
https://doi.org/10.1063/1.3427554
Published: July 2010
View articletitled, Determination of band offsets, chemical bonding, and microstructure of the ( Tb x Sc 1 − x ) 2 O 3 / Si system
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Journal Articles

Interaction of La 2 O 3 capping layers with HfO 2 gate dielectrics

M. Copel, S. Guha, N. Bojarczuk, E. Cartier, V. Narayanan, V. Paruchuri
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 212903 (2009)
https://doi.org/10.1063/1.3268456
Published: November 2009
View articletitled, Interaction of La 2 O 3 capping layers with HfO 2 gate dielectrics
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Journal Articles

Oxygen passivation of vacancy defects in metal-nitride gated HfO 2 / SiO 2 / Si devices

E. Cartier, M. Hopstaken, M. Copel
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 042901 (2009)
https://doi.org/10.1063/1.3186075
Published: July 2009
View articletitled, Oxygen passivation of vacancy defects in metal-nitride gated HfO 2 / SiO 2 / Si devices
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Journal Articles

Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia

C. D’Emic, J. Newbury, C. Scerbo, M. Copel, M. Gordon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1382–1389 (2008)
https://doi.org/10.1116/1.2953730
Published: August 2008
View articletitled, Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia
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Journal Articles

Reaction of barium oxide threshold voltage tuning layers with Si O 2 and Hf O 2 ∕ Si O 2 gate dielectrics

M. Copel
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 152909 (2008)
https://doi.org/10.1063/1.2912533
Published: April 2008
View articletitled, Reaction of barium oxide threshold voltage tuning layers with Si O 2 and Hf O 2 ∕ Si O 2 gate dielectrics
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Journal Articles

Control of homoepitaxial Si nanostructures by locally modified surface reactivity

A. Portavoce, R. Hull, M. C. Reuter, M. Copel, F. M. Ross
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 053106 (2008)
https://doi.org/10.1063/1.2841673
Published: February 2008
View articletitled, Control of homoepitaxial Si nanostructures by locally modified surface reactivity
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Journal Articles

Evidence for segregation of Te in Ge 2 Sb 2 Te 5 films: Effect on the “phase-change” stress

L. Krusin-Elbaum, C. Cabral, Jr., K. N. Chen, M. Copel, D. W. Abraham, K. B. Reuter, S. M. Rossnagel, J. Bruley, V. R. Deline
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 141902 (2007)
https://doi.org/10.1063/1.2719148
Published: April 2007
View articletitled, Evidence for segregation of Te in Ge 2 Sb 2 Te 5 films: Effect on the “phase-change” stress
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Journal Articles

Examination of flatband and threshold voltage tuning of Hf O 2 ∕ Ti N field effect transistors by dielectric cap layers

S. Guha, V. K. Paruchuri, M. Copel, V. Narayanan, Y. Y. Wang, P. E. Batson, N. A. Bojarczuk, B. Linder, B. Doris
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 092902 (2007)
https://doi.org/10.1063/1.2709642
Published: March 2007
View articletitled, Examination of flatband and threshold voltage tuning of Hf O 2 ∕ Ti N field effect transistors by dielectric cap layers
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Journal Articles

Atomic transport and integrity of Al 2 O 3 ( 2.0 nm ) ∕ Hf O 2 ( 2.5 nm ) gate stacks on Si

L. Miotti, R. P. Pezzi, M. Copel, C. Krug, I. J. R. Baumvol
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 052913 (2007)
https://doi.org/10.1063/1.2437708
Published: February 2007
View articletitled, Atomic transport and integrity of Al 2 O 3 ( 2.0 nm ) ∕ Hf O 2 ( 2.5 nm ) gate stacks on Si
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Journal Articles

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with Hf O 2 gate dielectrics and α - Si ∕ Si O 2 interlayers

S. J. Koester, E. W. Kiewra, Yanning Sun, D. A. Neumayer, J. A. Ott, M. Copel, D. K. Sadana, D. J. Webb, J. Fompeyrine, J.-P. Locquet, C. Marchiori, M. Sousa, R. Germann
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 042104 (2006)
https://doi.org/10.1063/1.2235862
Published: July 2006
View articletitled, Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with Hf O 2 gate dielectrics and α - Si ∕ Si O 2 interlayers
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Journal Articles

Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si

R. P. Pezzi, M. Copel, M. Gordon, E. Cartier, I. J. R. Baumvol
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 243509 (2006)
https://doi.org/10.1063/1.2209720
Published: June 2006
View articletitled, Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
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Journal Articles

Reduction of hafnium oxide and hafnium silicate by rhenium and platinum

M. Copel, R. P. Pezzi, D. Neumayer, P. Jamison
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 072914 (2006)
https://doi.org/10.1063/1.2177360
Published: February 2006
View articletitled, Reduction of hafnium oxide and hafnium silicate by rhenium and platinum
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Journal Articles

Aluminum mobility and interfacial segregation in fully silicided gate contacts

R. P. Pezzi, M. Copel, C. Cabral, Jr., I. J. R. Baumvol
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 162902 (2005)
https://doi.org/10.1063/1.2103392
Published: October 2005
View articletitled, Aluminum mobility and interfacial segregation in fully silicided gate contacts
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Journal Articles

High Resolution Profiling Using Ion Scattering and Resonant Nuclear Reactions

R. P. Pezzi, R. M. Wallace, M. Copel, I. J. R. Baumvol
Journal: AIP Conference Proceedings
AIP Conf. Proc. 788, 571–578 (2005)
https://doi.org/10.1063/1.2063020
Published: September 2005
View articletitled, High Resolution Profiling Using Ion Scattering and Resonant Nuclear Reactions
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Journal Articles

Interfacial segregation of dopants in fully silicided metal-oxide-semiconductor gates

M. Copel, R. P. Pezzi, C. Cabral, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 251904 (2005)
https://doi.org/10.1063/1.1951046
Published: June 2005
View articletitled, Interfacial segregation of dopants in fully silicided metal-oxide-semiconductor gates
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Journal Articles

Interfacial oxide formation from intrinsic oxygen in W – Hf O 2 gated silicon field-effect transistors

E. J. Preisler, S. Guha, M. Copel, N. A. Bojarczuk, M. C. Reuter, E. Gusev
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 6230–6232 (2004)
https://doi.org/10.1063/1.1834995
Published: December 2004
View articletitled, Interfacial oxide formation from intrinsic oxygen in W – Hf O 2 gated silicon field-effect transistors
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Journal Articles

Microstructure and thermal stability of HfO 2 gate dielectric deposited on Ge ( 100 )

E. P. Gusev, H. Shang, M. Copel, M. Gribelyuk, C. D’Emic, P. Kozlowski, T. Zabel
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 2334–2336 (2004)
https://doi.org/10.1063/1.1794849
Published: September 2004
View articletitled, Microstructure and thermal stability of HfO 2 gate dielectric deposited on Ge ( 100 )
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