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M. B. Panish
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Journal Articles

Beryllium δ doping studies in InP and Ga0.47In0.53As during metalorganic molecular beam epitaxy

Dan Ritter, R. A. Hamm, M. B. Panish, M. Geva
Journal: Applied Physics Letters
Appl. Phys. Lett. 63, 1543–1545 (1993)
https://doi.org/10.1063/1.110743
Published: September 1993
View article titled, Beryllium δ doping studies in InP and Ga<sub>0.47</sub>In<sub>0.53</sub>As during metalorganic molecular beam epitaxy
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Journal Articles

Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy

R. A. Hamm, A. Feygenson, D. Ritter, Y. L. Wang, H. Temkin, R. D. Yadvish, M. B. Panish
Journal: Applied Physics Letters
Appl. Phys. Lett. 61, 592–594 (1992)
https://doi.org/10.1063/1.107846
Published: August 1992
View article titled, Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy
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Journal Articles

Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors

D. Ritter, R. A. Hamm, A. Feygenson, H. Temkin, M. B. Panish, S. Chandrasekhar
Journal: Applied Physics Letters
Appl. Phys. Lett. 61, 70–72 (1992)
https://doi.org/10.1063/1.107672
Published: July 1992
View article titled, Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors
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Journal Articles

Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors

D. Ritter, R. A. Hamm, A. Feygenson, M. B. Panish
Journal: Applied Physics Letters
Appl. Phys. Lett. 60, 3150–3152 (1992)
https://doi.org/10.1063/1.106751
Published: June 1992
View article titled, Anomalous electric field and temperature dependence of collector multiplication in InP/Ga<sub>0.47</sub>In<sub>0.53</sub>As heterojunction bipolar transistors
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Journal Articles

InGaAs/InP hole intersubband normal incidence quantum well infrared photodetector

S. D. Gunapala, B. F. Levine, D. Ritter, R. Hamm, M. B. Panish
Journal: Journal of Applied Physics
J. Appl. Phys. 71, 2458–2460 (1992)
https://doi.org/10.1063/1.351111
Published: March 1992
View article titled, InGaAs/InP hole intersubband normal incidence quantum well infrared photodetector
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Journal Articles

Lattice‐matched InGaAsP/InP long‐wavelength quantum well infrared photodetectors

S. D. Gunapala, B. F. Levine, D. Ritter, R. A. Hamm, M. B. Panish
Journal: Applied Physics Letters
Appl. Phys. Lett. 60, 636–638 (1992)
https://doi.org/10.1063/1.106577
Published: February 1992
View article titled, Lattice‐matched InGaAsP/InP long‐wavelength quantum well infrared photodetectors
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Journal Articles

Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors

D. Ritter, R. A. Hamm, A. Feygenson, M. B. Panish, S. Chandrasekhar
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 3431–3433 (1991)
https://doi.org/10.1063/1.105698
Published: December 1991
View article titled, Diffusive base transport in narrow base InP/Ga<sub>0.47</sub>In<sub>0.53</sub>As heterojunction bipolar transistors
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Journal Articles

Erratum: Metalorganic molecular beam epitaxial growth of InP/GaInAs multiquantum wells for infrared photodetection [Appl. Phys. Lett. 59 , 552 (1991)]

D. Ritter, R. A. Hamm, M. B. Panish, J. M. Vandenberg, D. Gershoni, S. D. Gunapala, B. F. Levine
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 2472 (1991)
https://doi.org/10.1063/1.106371
Published: November 1991
View article titled, Erratum: Metalorganic molecular beam epitaxial growth of InP/GaInAs multiquantum wells for infrared photodetection [Appl. Phys. Lett. 59 , 552 (1991)]
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Journal Articles

Metalorganic molecular beam epitaxy of 1.3 μm quaternary layers and heterostructure lasers

R. A. Hamm, D. Ritter, H. Temkin, M. B. Panish, J. M. Vandenberg, R. D. Yadvish
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 1893–1895 (1991)
https://doi.org/10.1063/1.106180
Published: October 1991
View article titled, Metalorganic molecular beam epitaxy of 1.3 μm quaternary layers and heterostructure lasers
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Journal Articles

Photoinduced intersubband absorption in lattice‐matched InGaAs/InP multiquantum well

J. Oiknine‐Schlesinger, E. Ehrenfreund, D. Gershoni, D. Ritter, M. B. Panish, R. A. Hamm
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 970–972 (1991)
https://doi.org/10.1063/1.106318
Published: August 1991
View article titled, Photoinduced intersubband absorption in lattice‐matched InGaAs/InP multiquantum well
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Journal Articles

Metalorganic molecular beam epitaxial growth of InP/GaInAs multiquantum wells for infrared photodetection

D. Ritter, R. A. Hamm, M. B. Panish, J. M. Vandenberg, D. Gershoni, S. D. Gunapala, B. F. Levine
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 552–554 (1991)
https://doi.org/10.1063/1.105411
Published: July 1991
View article titled, Metalorganic molecular beam epitaxial growth of InP/GaInAs multiquantum wells for infrared photodetection
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Journal Articles

Optical and electrical properties of InP/InGaAs grown selectively on SiO2‐masked InP

Y. L. Wang, A. Feygenson, R. A. Hamm, D. Ritter, J. S. Weiner, H. Temkin, M. B. Panish
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 443–445 (1991)
https://doi.org/10.1063/1.105457
Published: July 1991
View article titled, Optical and electrical properties of InP/InGaAs grown selectively on SiO<sub>2</sub>‐masked InP
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Journal Articles

p‐type doping of InP and Ga0.47In0.53As using diethylzinc during metalorganic molecular beam epitaxy

R. A. Hamm, D. Ritter, H. Temkin, M. B. Panish, M. Geva
Journal: Applied Physics Letters
Appl. Phys. Lett. 58, 2378–2380 (1991)
https://doi.org/10.1063/1.104876
Published: May 1991
View article titled, <em>p</em>‐type doping of InP and Ga<sub>0.47</sub>In<sub>0.53</sub>As using diethylzinc during metalorganic molecular beam epitaxy
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Journal Articles

InGaAs/InP long wavelength quantum well infrared photodetectors

S. D. Gunapala, B. F. Levine, D. Ritter, R. Hamm, M. B. Panish
Journal: Applied Physics Letters
Appl. Phys. Lett. 58, 2024–2026 (1991)
https://doi.org/10.1063/1.105001
Published: May 1991
View article titled, InGaAs/InP long wavelength quantum well infrared photodetectors
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Journal Articles

Selective growth of InP/GaInAs heterostructures using metalorganic molecular beam epitaxy

Y. L. Wang, A. Feygenson, R. A. Hamm, D. Ritter, J. S. Weiner, H. Temkin, M. B. Panish
Journal: AIP Conference Proceedings
AIP Conf. Proc. 227, 21–24 (1991)
https://doi.org/10.1063/1.40614
Published: May 1991
View article titled, Selective growth of InP/GaInAs heterostructures using metalorganic molecular beam epitaxy
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Journal Articles

Decay times of excitons in lattice‐matched InGaAs/InP single quantum wells

I. Brener, D. Gershoni, D. Ritter, M. B. Panish, R. A. Hamm
Journal: Applied Physics Letters
Appl. Phys. Lett. 58, 965–967 (1991)
https://doi.org/10.1063/1.104457
Published: March 1991
View article titled, Decay times of excitons in lattice‐matched InGaAs/InP single quantum wells
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Journal Articles

Optical properties of InGaAs/InP semiconductor nanostructures

J. S. Weiner, Y. L. Wang, H. Temkin, L. R. Harriott, R. A. Hamm, M. B. Panish
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 8, 1371–1373 (1990)
https://doi.org/10.1116/1.585080
Published: November 1990
View article titled, Optical properties of InGaAs/InP semiconductor nanostructures
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Journal Articles

Sn incorporation into InP grown by molecular beam epitaxy: A secondary‐ion mass spectrometry study

M. B. Panish, R. A. Hamm, L. C. Hopkins
Journal: Applied Physics Letters
Appl. Phys. Lett. 56, 2301–2303 (1990)
https://doi.org/10.1063/1.102947
Published: June 1990
View article titled, Sn incorporation into InP grown by molecular beam epitaxy: A secondary‐ion mass spectrometry study
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Journal Articles

Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine

D. Ritter, M. B. Panish, R. A. Hamm, D. Gershoni, I. Brener
Journal: Applied Physics Letters
Appl. Phys. Lett. 56, 1448–1450 (1990)
https://doi.org/10.1063/1.102494
Published: April 1990
View article titled, Metalorganic molecular beam epitaxy of InP, Ga<sub>0.47</sub>In<sub>0.53</sub>As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine
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Journal Articles

Base doping limits in heterostructure bipolar transistors

B. Jalali, R. N. Nottenburg, A. F. J. Levi, R. A. Hamm, M. B. Panish, D. Sivco, A. Y. Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 56, 1460–1462 (1990)
https://doi.org/10.1063/1.102498
Published: April 1990
View article titled, Base doping limits in heterostructure bipolar transistors
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