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Journal Articles

Publisher’s Note: “Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes” [Appl. Phys. Lett. 70, 2978 (1997)]

C. J. Sun, M. Zubair Anwar, Q. Chen, J. W. Yang, M. Asif Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, H. X. Jiang

Appl. Phys. Lett. 98, 149901 (2011)

https://doi.org/10.1063/1.3576116

Published: April 2011

View article titled, Publisher’s Note: “Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes” [Appl. Phys. Lett. 70, 2978 (1997)]

Journal Articles

Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates

J. Mei, F. A. Ponce, R. S. Qhalid Fareed, J. W. Yang, M. Asif Khan

Appl. Phys. Lett. 90, 221909 (2007)

https://doi.org/10.1063/1.2745207

Published: May 2007

View article titled, Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates

Journal Articles

Photoluminescence dynamics in highly nonhomogeneously excited GaN

E. Kuokstis, G. Tamulaitis, K. Liu, M. S. Shur, J. W. Li, J. W. Yang, M. Asif Khan

Appl. Phys. Lett. 90, 161920 (2007)

https://doi.org/10.1063/1.2721121

Published: April 2007

View article titled, Photoluminescence dynamics in highly nonhomogeneously excited GaN

Journal Articles

III-nitride transistors with capacitively coupled contacts

G. Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, J. Yang, M. Asif Khan

Appl. Phys. Lett. 89, 033510 (2006)

https://doi.org/10.1063/1.2234725

Published: July 2006

View article titled, III-nitride transistors with capacitively coupled contacts

Journal Articles

Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers

E. Kuokstis, W. H. Sun, M. Shatalov, J. W. Yang, M. Asif Khan

Appl. Phys. Lett. 88, 261905 (2006)

https://doi.org/10.1063/1.2218275

Published: June 2006

View article titled, Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers

Journal Articles

Digital oxide deposition of Si O 2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors

V. Adivarahan, S. Rai, N. Tipirneni, A. Koudymov, J. Yang, G. Simin, M. Asif Khan

Appl. Phys. Lett. 88, 182507 (2006)

https://doi.org/10.1063/1.2198508

Published: May 2006

View article titled, Digital oxide deposition of Si O 2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors

Journal Articles

Optical power degradation mechanisms in AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire

Z. Gong, M. Gaevski, V. Adivarahan, W. Sun, M. Shatalov, M. Asif Khan

Appl. Phys. Lett. 88, 121106 (2006)

https://doi.org/10.1063/1.2187429

Published: March 2006

View article titled, Optical power degradation mechanisms in AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire

Journal Articles

Reduction of threading dislocation densities in AlN ∕ sapphire epilayers driven by growth mode modification

J. Bai, M. Dudley, W. H. Sun, H. M. Wang, M. Asif Khan

Appl. Phys. Lett. 88, 051903 (2006)

https://doi.org/10.1063/1.2170407

Published: January 2006

View article titled, Reduction of threading dislocation densities in AlN ∕ sapphire epilayers driven by growth mode modification

Journal Articles

Fine structure of Al N ∕ Al Ga N superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

W. H. Sun, J. P. Zhang, J. W. Yang, H. P. Maruska, M. Asif Khan, R. Liu, F. A. Ponce

Appl. Phys. Lett. 87, 211915 (2005)

https://doi.org/10.1063/1.2136424

Published: November 2005

View article titled, Fine structure of Al N ∕ Al Ga N superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

Journal Articles

Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures

S. Saygi, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan, J. Deng, R. Gaska, M. S. Shur

Appl. Phys. Lett. 87, 043505 (2005)

https://doi.org/10.1063/1.2001745

Published: July 2005

View article titled, Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures

Journal Articles

Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

M. Shatalov, A. Chitnis, P. Yadav, Md. F. Hasan, J. Khan, V. Adivarahan, H. P. Maruska, W. H. Sun, M. Asif Khan

Appl. Phys. Lett. 86, 201109 (2005)

https://doi.org/10.1063/1.1927695

Published: May 2005

View article titled, Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

Journal Articles

Internal polarization fields in GaN ∕ AlGaN multiple quantum wells with different crystallographic orientations

E. Kuokstis, W. H. Sun, C. Q. Chen, J. W. Yang, M. Asif Khan

J. Appl. Phys. 97, 103719 (2005)

https://doi.org/10.1063/1.1900287

Published: May 2005

View article titled, Internal polarization fields in GaN ∕ AlGaN multiple quantum wells with different crystallographic orientations

Journal Articles

Composite-layered solid-state field controlled emitter for a better control of the cathode surface barrier

V. Semet, Vu Thien Binh, J. P. Zhang, J. Yang, M. Asif Khan, R. Tsu

J. Vac. Sci. Technol. B 23, 824–830 (2005)

https://doi.org/10.1116/1.1864065

Published: April 2005

View article titled, Composite-layered solid-state field controlled emitter for a better control of the cathode surface barrier

Journal Articles

Simulation of gate lag and current collapse in gallium nitride field-effect transistors

N. Braga, R. Mickevicius, R. Gaska, M. S. Shur, M. Asif Khan, G. Simin

Appl. Phys. Lett. 85, 4780–4782 (2004)

https://doi.org/10.1063/1.1823018

Published: November 2004

View article titled, Simulation of gate lag and current collapse in gallium nitride field-effect transistors

Journal Articles

250 nm AlGaN light-emitting diodes

V. Adivarahan, W. H. Sun, A. Chitnis, M. Shatalov, S. Wu, H. P. Maruska, M. Asif Khan

Appl. Phys. Lett. 85, 2175–2177 (2004)

https://doi.org/10.1063/1.1796525

Published: September 2004

View article titled, 250 nm AlGaN light-emitting diodes

Journal Articles

Below band gap photoreflectance transitions in epitaxial GaN

Phil W. Yu, Jerry D. Clark, David C. Look, C. Q. Chen, Jinwei Yang, Edmundas Koutstis, M. Asif Khan, Denis V. Tsvertkov, Vladimir A. Dmitriev

Appl. Phys. Lett. 85, 1931–1933 (2004)

https://doi.org/10.1063/1.1780602

Published: September 2004

View article titled, Below band gap photoreflectance transitions in epitaxial GaN

Journal Articles

High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design

V. Adivarahan, S. Wu, W. H. Sun, V. Mandavilli, M. S. Shatalov, G. Simin, J. W. Yang, H. P. Maruska, M. Asif Khan

Appl. Phys. Lett. 85, 1838–1840 (2004)

https://doi.org/10.1063/1.1784882

Published: September 2004

View article titled, High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design

Journal Articles

Increase of free carrier lifetime in nonpolar a -plane GaN grown by epitaxial lateral overgrowth

S. Juršènas, E. Kuokštis, S. Miasojedovas, G. Kurilčik, A. Žukauskas, C. Q. Chen, J. W. Yang, V. Adivarahan, M. Asif Khan

Appl. Phys. Lett. 85, 771–773 (2004)

https://doi.org/10.1063/1.1777409

Published: August 2004

View article titled, Increase of free carrier lifetime in nonpolar a -plane GaN grown by epitaxial lateral overgrowth

Journal Articles

High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

V. Adivarahan, S. Wu, J. P. Zhang, A. Chitnis, M. Shatalov, V. Mandavilli, R. Gaska, M. Asif Khan

Appl. Phys. Lett. 84, 4762–4764 (2004)

https://doi.org/10.1063/1.1756202

Published: June 2004

View article titled, High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

Journal Articles

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

N. Braga, R. Mickevicius, R. Gaska, X. Hu, M. S. Shur, M. Asif Khan, G. Simin, J. Yang

J. Appl. Phys. 95, 6409–6413 (2004)

https://doi.org/10.1063/1.1719262

Published: June 2004

View article titled, Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

NARROW

Topics

Publisher’s Note: “Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes” [Appl. Phys. Lett. 70, 2978 (1997)]

Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates

Photoluminescence dynamics in highly nonhomogeneously excited GaN

III-nitride transistors with capacitively coupled contacts

Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers

Digital oxide deposition of Si O 2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors

Optical power degradation mechanisms in AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire

Reduction of threading dislocation densities in AlN ∕ sapphire epilayers driven by growth mode modification

Fine structure of Al N ∕ Al Ga N superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures

Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

Internal polarization fields in GaN ∕ AlGaN multiple quantum wells with different crystallographic orientations

Composite-layered solid-state field controlled emitter for a better control of the cathode surface barrier

Simulation of gate lag and current collapse in gallium nitride field-effect transistors

250 nm AlGaN light-emitting diodes

Below band gap photoreflectance transitions in epitaxial GaN

High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design

Increase of free carrier lifetime in nonpolar a -plane GaN grown by epitaxial lateral overgrowth

High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

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