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Journal Articles

Atomic-layer deposited thulium oxide as a passivation layer on germanium

I. Z. Mitrovic, S. Hall, M. Althobaiti, D. Hesp, V. R. Dhanak, A. Santoni, A. D. Weerakkody, N. Sedghi, P. R. Chalker, C. Henkel, E. Dentoni Litta, P.-E. Hellström, M. Östling, H. Tan, S. Schamm-Chardon
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 214104 (2015)
https://doi.org/10.1063/1.4922121
Published: June 2015
View articletitled, Atomic-layer deposited thulium oxide as a passivation layer on germanium
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Journal Articles

Bias-temperature instability in single-layer graphene field-effect transistors

Yu. Yu. Illarionov, A. D. Smith, S. Vaziri, M. Ostling, T. Mueller, M. C. Lemme, T. Grasser
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 143507 (2014)
https://doi.org/10.1063/1.4897344
Published: October 2014
View articletitled, Bias-temperature instability in single-layer graphene field-effect transistors
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Journal Articles

Characterization of SiGe/Si multi-quantum wells for infrared sensing

M. Moeen, A. Salemi, M. Kolahdouz, M. Östling, H. H. Radamson
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 251609 (2013)
https://doi.org/10.1063/1.4855595
Published: December 2013
View articletitled, Characterization of SiGe/Si multi-quantum wells for infrared sensing
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Journal Articles

On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

S. M. Thomas, M. J. Prest, T. E. Whall, D. R. Leadley, P. Toniutti, F. Conzatti, D. Esseni, L. Donetti, F. Gámiz, R. J. P. Lander, G. Vellianitis, P.-E. Hellström, M. Östling
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 124503 (2011)
https://doi.org/10.1063/1.3669490
Published: December 2011
View articletitled, On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
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Journal Articles

Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

L. Donetti, F. Gámiz, S. Thomas, T. E. Whall, D. R. Leadley, P.-E. Hellström, G. Malm, M. Östling
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 063711 (2011)
https://doi.org/10.1063/1.3639281
Published: September 2011
View articletitled, Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
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Journal Articles

Surface passivation oxide effects on the current gain of 4 H - Si C bipolar junction transistors

H.-S. Lee, M. Domeij, C.-M. Zetterling, M. Östling, F. Allerstam, E. Ö. Sveinbjörnsson
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 082113 (2008)
https://doi.org/10.1063/1.2888965
Published: February 2008
View articletitled, Surface passivation oxide effects on the current gain of 4 H - Si C bipolar junction transistors
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Journal Articles

Carrier transport through a dry-etched InP-based two-dimensional photonic crystal

A. Berrier, M. Mulot, G. Malm, M. Östling, S. Anand
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 123101 (2007)
https://doi.org/10.1063/1.2747222
Published: June 2007
View articletitled, Carrier transport through a dry-etched InP-based two-dimensional photonic crystal
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Journal Articles

Ni 2 Si nanowires of extraordinarily low resistivity

Z. Zhang, J. Lu, P.-E. Hellström, M. Östling, S.-L. Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 213103 (2006)
https://doi.org/10.1063/1.2207222
Published: May 2006
View articletitled, Ni 2 Si nanowires of extraordinarily low resistivity
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Journal Articles

Robust, scalable self-aligned platinum silicide process

Z. Zhang, S.-L. Zhang, M. Östling, J. Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 142114 (2006)
https://doi.org/10.1063/1.2194313
Published: April 2006
View articletitled, Robust, scalable self-aligned platinum silicide process
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Journal Articles

Low‐frequency Noise in SiGe Channel pMOSFETs on Ultra‐Thin Body SOI with Ni‐Silicided Source/Drain

M. von Haartman, J. Hållstedt, J. Seger, B. G. Malm, P.‐E. Hellström, M. Östling
Journal: AIP Conference Proceedings
AIP Conf. Proc. 780, 307–310 (2005)
https://doi.org/10.1063/1.2036756
Published: August 2005
View articletitled, Low‐frequency Noise in SiGe Channel pMOSFETs on Ultra‐Thin Body SOI with Ni‐Silicided Source/Drain
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Journal Articles

Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator

J. Seger, P.-E. Hellström, J. Lu, B. G. Malm, M. von Haartman, M. Östling, S.-L. Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 253507 (2005)
https://doi.org/10.1063/1.1944888
Published: June 2005
View articletitled, Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator
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Journal Articles

Ferroelectric Pb ( Zr,Ti ) O 3 / Al 2 O 3 /4 H–SiC diode structures

S.-M. Koo, S. I. Khartsev, C.-M. Zetterling, A. M. Grishin, M. Östling
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 895–897 (2002)
https://doi.org/10.1063/1.1497443
Published: July 2002
View articletitled, Ferroelectric Pb ( Zr,Ti ) O 3 / Al 2 O 3 /4 H–SiC diode structures
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Journal Articles

Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

S.-K. Lee, C.-M. Zetterling, M. Östling
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 253–260 (2002)
https://doi.org/10.1063/1.1481201
Published: July 2002
View articletitled, Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications
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Journal Articles

Characterization of strained Si/Si 1−x Ge x / Si heterostructures annealed in oxygen or argon

A.-C. Lindgren, C. Chen, S.-L. Zhang, M. Östling, Y. Zhang, D. Zhu
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 2708–2712 (2002)
https://doi.org/10.1063/1.1436290
Published: March 2002
View articletitled, Characterization of strained Si/Si 1−x Ge x / Si heterostructures annealed in oxygen or argon
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Journal Articles

Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H–SiC

E. Danielsson, C.-M. Zetterling, M. Östling, D. Tsvetkov, V. A. Dmitriev
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 2372–2379 (2002)
https://doi.org/10.1063/1.1430892
Published: February 2002
View articletitled, Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H–SiC
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Journal Articles

Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide

S.-K. Lee, C.-M. Zetterling, E. Danielsson, M. Östling, J.-P. Palmquist, H. Högberg, U. Jansson
Journal: Applied Physics Letters
Appl. Phys. Lett. 77, 1478–1480 (2000)
https://doi.org/10.1063/1.1290690
Published: September 2000
View articletitled, Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H–silicon carbide
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Journal Articles

Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

J. Pejnefors, S.-L. Zhang, H. H. Radamson, J. V. Grahn, M. Östling
Journal: Journal of Applied Physics
J. Appl. Phys. 88, 1655–1663 (2000)
https://doi.org/10.1063/1.373867
Published: August 2000
View articletitled, Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure
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Journal Articles

Schottky diode formation and characterization of titanium tungsten to n- and p-type 4H silicon carbide

S.-K. Lee, C.-M. Zetterling, M. Östling
Journal: Journal of Applied Physics
J. Appl. Phys. 87, 8039–8044 (2000)
https://doi.org/10.1063/1.373494
Published: June 2000
View articletitled, Schottky diode formation and characterization of titanium tungsten to n- and p-type 4H silicon carbide
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Journal Articles

Ultradeep, low-damage dry etching of SiC

H. Cho, P. Leerungnawarat, D. C. Hays, S. J. Pearton, S. N. G. Chu, R. M. Strong, C.-M. Zetterling, M. Östling, F. Ren
Journal: Applied Physics Letters
Appl. Phys. Lett. 76, 739–741 (2000)
https://doi.org/10.1063/1.125879
Published: February 2000
View articletitled, Ultradeep, low-damage dry etching of SiC
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Journal Articles

Via-hole etching for SiC

P. Leerungnawarat, D. C. Hays, H. Cho, S. J. Pearton, R. M. Strong, C.-M. Zetterling, M. Östling
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 2050–2054 (1999)
https://doi.org/10.1116/1.590870
Published: September 1999
View articletitled, Via-hole etching for SiC
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