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Journal Articles

Highly stable InZnSnTbO_X thin-film transistors

Yan Wang, Penghui He, Shiyue Zuo, Yu Song, Lin Tang, Ruohao Hong, Guoli Li, Lei Liao, Xuming Zou, Xingqiang Liu

Appl. Phys. Lett. 126, 173501 (2025)

https://doi.org/10.1063/5.0255013

Published: April 2025

View articletitled, Highly stable InZnSnTbOX thin-film transistors

Journal Articles

Tunable optoelectronic response in van der Waals heterojunction transistors for artificial visual recognition

Mengli Dang, Xinpei Duan, Chang Liu, Sen Zhang, Xitong Hong, Wencheng Niu, Pengfei Luo, Bei Jiang, Tong Bu, Lin Tang, Weijie Jiang, Da Wan, Xuming Zou, Lei Liao, Xingqiang Liu

Appl. Phys. Lett. 124, 123502 (2024)

https://doi.org/10.1063/5.0192497

Published: March 2024

View articletitled, Tunable optoelectronic response in van der Waals heterojunction transistors for artificial visual recognition

Includes: Supplementary data

Journal Articles

Epitaxial Hf_0.5Zr_0.5O₂ films: A temperature dependence study

Ke Xiong, Xinning Huang, Yong Zhou, Yongguang Xiao, Lei Liao, Haoran Yan, Tie Lin, Hong Shen, Pan Chen, Lifen Wang, Xuedong Bai, Xiangjian Meng, Xudong Wang, Junhao Chu, Jianlu Wang

Appl. Phys. Lett. 124, 052901 (2024)

https://doi.org/10.1063/5.0177773

Published: January 2024

View articletitled, Epitaxial Hf0.5Zr0.5O2 films: A temperature dependence study

Includes: Supplementary data

Journal Articles

Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel

Penghui He, Chunchun Ding, Xuming Zou, Guoli Li, Wei Hu, Chao Ma, Denis Flandre, Benjamín Iñíguez, Lei Liao, Linfeng Lan, Xingqiang Liu

Appl. Phys. Lett. 121, 193301 (2022)

https://doi.org/10.1063/5.0098765

Published: November 2022

View articletitled, Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel

Includes: Supplementary data

Journal Articles

Epitaxial growth and phase evolution of ferroelectric La-doped HfO₂ films

Appl. Phys. Lett. 120, 162904 (2022)

https://doi.org/10.1063/5.0087976

Published: April 2022

View articletitled, Epitaxial growth and phase evolution of ferroelectric La-doped HfO2 films

Includes: Supplementary data

Journal Articles

Efficient modulation of MoS₂/WSe₂ interlayer excitons via uniaxial strain

Liwang Ren, Zhiwei Li, Yawei Lv, Xin Li, Danliang Zhang, Wanying Li, Liting Liu, Lingan Kong, Xidong Duan, Xiao Wang, Anlian Pan, Lei Liao, Yuan Liu

Appl. Phys. Lett. 120, 053107 (2022)

https://doi.org/10.1063/5.0078073

Published: February 2022

View articletitled, Efficient modulation of MoS2/WSe2 interlayer excitons via uniaxial strain

Includes: Supplementary data

Journal Articles

Eulerian–Eulerian multiphase models for simulating collapse of submarine sediment column with rheological characteristics in air–water flow

Wenkang Meng (孟文康), Lei Liao (廖磊), Ching-Hao Yu (游景皓), Jia Li (李嘉), Ruidong An (安瑞冬)

Physics of Fluids 33, 113301 (2021)

https://doi.org/10.1063/5.0067840

Published: November 2021

View articletitled, Eulerian–Eulerian multiphase models for simulating collapse of submarine sediment column with rheological characteristics in air–water flow

Journal Articles

Origin of low-temperature negative transconductance in multilayer MoS₂ transistors

Qi Chen, Guoli Li, Yuan Liu, Nicolas André, Xingqiang Liu, Zhen Xia, Denis Flandre, Lei Liao

Appl. Phys. Lett. 119, 043502 (2021)

https://doi.org/10.1063/5.0058545

Published: July 2021

View articletitled, Origin of low-temperature negative transconductance in multilayer MoS2 transistors

Journal Articles

Gate-tunable the interface properties of GaAs–WSe₂ (1D–2D) vdWs heterojunction for high-responsivity, self-powered photodetector

Xue Chen, Bei Jiang, Dengkui Wang, Guoli Li, Hailu Wang, Hao Wang, Fang Wang, Peng Wang, Lei Liao, Zhipeng Wei

Appl. Phys. Lett. 118, 041102 (2021)

https://doi.org/10.1063/5.0035275

Published: January 2021

View articletitled, Gate-tunable the interface properties of GaAs–WSe2 (1D–2D) vdWs heterojunction for high-responsivity, self-powered photodetector

Includes: Supplementary data

Journal Articles

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Bei Jiang, Hao Huang, Rui Chen, Guoli Li, Denis Flandre, Da Wan, Xue Chen, Xingqiang Liu, Cong Ye, Lei Liao

Appl. Phys. Lett. 117, 111602 (2020)

https://doi.org/10.1063/5.0021335

Published: September 2020

View articletitled, Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Includes: Supplementary data

Journal Articles

The photovoltaic and photoconductive photodetector based on GeSe/2D semiconductor van der Waals heterostructure

Zhenyu Yang, Bei Jiang, Zhijie Zhang, Zhongzheng Wang, Xiaobo He, Da Wan, Xuming Zou, Xingqiang Liu, Lei Liao, Fukai Shan

Appl. Phys. Lett. 116, 141101 (2020)

https://doi.org/10.1063/1.5143961

Published: April 2020

View articletitled, The photovoltaic and photoconductive photodetector based on GeSe/2D semiconductor van der Waals heterostructure

Includes: Supplementary data

Journal Articles

High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer

Yudan Wang, Facai Wu, Xingqiang Liu, Jun Lin, Jui-Yuan Chen, Wen-Wei Wu, Jingsong Wei, Yuan Liu, Qi Liu, Lei Liao

Appl. Phys. Lett. 115, 193503 (2019)

https://doi.org/10.1063/1.5115531

Published: November 2019

View articletitled, High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer

Includes: Supplementary data

Journal Articles

Comprehensive insights into effect of van der Waals contact on carbon nanotube network field-effect transistors

Hao Huang, Xingqiang Liu, Fang Liu, Chuansheng Liu, Xuelei Liang, Zhihong Zhang, Kaihui Liu, Xingzhong Zhao, Lei Liao

Appl. Phys. Lett. 115, 173503 (2019)

https://doi.org/10.1063/1.5100011

Published: October 2019

View articletitled, Comprehensive insights into effect of van der Waals contact on carbon nanotube network field-effect transistors

Includes: Supplementary data

Journal Articles

Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors

Guoli Li, Ablat Abliz, Lei Xu, Nicolas André, Xingqiang Liu, Yun Zeng, Denis Flandre, Lei Liao

Appl. Phys. Lett. 112, 253504 (2018)

https://doi.org/10.1063/1.5032169

Published: June 2018

View articletitled, Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors

Journal Articles

High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

Hongzheng Tian, Xudong Wang, Yuankun Zhu, Lei Liao, Xianying Wang, Jianlu Wang, Weida Hu

Appl. Phys. Lett. 110, 043505 (2017)

https://doi.org/10.1063/1.4975061

Published: January 2017

View articletitled, High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

Journal Articles

Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

Ablat Abliz, Jingli Wang, Lei Xu, Da Wan, Lei Liao, Cong Ye, Chuansheng Liu, Changzhong Jiang, Huipeng Chen, Tailiang Guo

Appl. Phys. Lett. 108, 213501 (2016)

https://doi.org/10.1063/1.4952445

Published: May 2016

View articletitled, Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

Includes: Supplementary data

Journal Articles

Short channel field-effect transistors from ultrathin GaTe nanosheets

Kai Xu, Zhangyuan Zhang, Zhenxing Wang, Feng Wang, Yun Huang, Lei Liao, Jun He

Appl. Phys. Lett. 107, 153507 (2015)

https://doi.org/10.1063/1.4933346

Published: October 2015

View articletitled, Short channel field-effect transistors from ultrathin GaTe nanosheets

Journal Articles

Highly sensitive phototransistor based on GaSe nanosheets

Hai Huang, Peng Wang, Yanqing Gao, Xudong Wang, Tie Lin, Jianlu Wang, Lei Liao, Jinglan Sun, Xiangjian Meng, Zhiming Huang, Xiaoshuang Chen, Junhao Chu

Appl. Phys. Lett. 107, 143112 (2015)

https://doi.org/10.1063/1.4933034

Published: October 2015

View articletitled, Highly sensitive phototransistor based on GaSe nanosheets

Journal Articles

The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistors

Lei Xu, Chun-Wei Huang, Ablat Abliz, Yang Hua, Lei Liao, Wen-Wei Wu, Xiangheng Xiao, Changzhong Jiang, Wei Liu, Jinchai Li

Appl. Phys. Lett. 106, 051607 (2015)

https://doi.org/10.1063/1.4907680

Published: February 2015

View articletitled, The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistors

Journal Articles

Side-to-side alignment of gold nanorods with polarization-free characteristic for highly reproducible surface enhanced Raman scattering

Zhigao Dai, Xiangheng Xiao, Wei Wu, Lei Liao, Fei Mei, Xuefeng Yu, Shishang Guo, Jianjian Ying, Feng Ren, Changzhong Jiang

Appl. Phys. Lett. 105, 211902 (2014)

https://doi.org/10.1063/1.4902812

Published: November 2014

View articletitled, Side-to-side alignment of gold nanorods with polarization-free characteristic for highly reproducible surface enhanced Raman scattering

Includes: Supplementary data

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Highly stable InZnSnTbO_X thin-film transistors

Tunable optoelectronic response in van der Waals heterojunction transistors for artificial visual recognition

Epitaxial Hf_0.5Zr_0.5O₂ films: A temperature dependence study

Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel

Epitaxial growth and phase evolution of ferroelectric La-doped HfO₂ films

Efficient modulation of MoS₂/WSe₂ interlayer excitons via uniaxial strain

Eulerian–Eulerian multiphase models for simulating collapse of submarine sediment column with rheological characteristics in air–water flow

Origin of low-temperature negative transconductance in multilayer MoS₂ transistors

Gate-tunable the interface properties of GaAs–WSe₂ (1D–2D) vdWs heterojunction for high-responsivity, self-powered photodetector

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

The photovoltaic and photoconductive photodetector based on GeSe/2D semiconductor van der Waals heterostructure

High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer

Comprehensive insights into effect of van der Waals contact on carbon nanotube network field-effect transistors

Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors

High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

Short channel field-effect transistors from ultrathin GaTe nanosheets

Highly sensitive phototransistor based on GaSe nanosheets

The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistors

Side-to-side alignment of gold nanorods with polarization-free characteristic for highly reproducible surface enhanced Raman scattering

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