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Journal Articles

Guard Digits vs. Roundoff Error vs. Overall Uncertainty

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John Denker, Larry Smith
Journal: The Physics Teacher
Phys. Teach. 56, 532–534 (2018)
https://doi.org/10.1119/1.5064563
Published: November 2018
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Journal Articles

Preface: Stress-Induced Phenomena and Reliability in 3D Microelectronics

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Paul S. Ho, Chao-Kun Hu, Mark Nakamoto, Shinichi Ogawa, Larry Smith, Valeriy Sukharev, Ehrenfried Zschech
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1601, 1–2 (2014)
https://doi.org/10.1063/1.4881337
Published: June 2014
View articletitled, Preface: Stress-Induced Phenomena and Reliability in 3D Microelectronics
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Journal Articles

PREFACE

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Ehrenfried Zschech, Riko Radojcic, Valeriy Sukharev, Larry Smith
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1378, 1 (2011)
https://doi.org/10.1063/1.3615692
Published: September 2011
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Journal Articles

Electromigration behavior of 60 nm dual damascene Cu interconnects

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Jung Woo Pyun, Won-Chong Baek, Lijuan Zhang, Jay Im, Paul S. Ho, Larry Smith, Gregory Smith
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 093516 (2007)
https://doi.org/10.1063/1.2805425
Published: November 2007
View articletitled, Electromigration behavior of 60 nm dual damascene Cu interconnects
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Journal Articles

Effect of barrier process on electromigration reliability of Cu/porous low- k interconnects

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Jung Woo Pyun, Won-Chong Baek, Jay Im, Paul S. Ho, Larry Smith, Kyle Neuman, Klaus Pfeifer
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 023532 (2006)
https://doi.org/10.1063/1.2219003
Published: July 2006
View articletitled, Effect of barrier process on electromigration reliability of Cu/porous low- k interconnects
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Journal Articles

Effect of barrier thickness on electromigration reliability of Cu/porous low k interconnects

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Jung Woo Pyun, Xia Lu, Jayhoon Chung, Sean Yoon, Paul S. Ho, Neil Henis, Kyle Neuman, Larry Smith, Klaus Pfeifer
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 061907 (2005)
https://doi.org/10.1063/1.2008382
Published: August 2005
View articletitled, Effect of barrier thickness on electromigration reliability of Cu/porous low k interconnects
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