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Journal Articles

High extinction ratio thermo-optic based reconfigurable optical logic gates for programmable PICs

S. Hassan, D. Chack, L. Pavesi
Journal: AIP Advances
AIP Advances 12, 055304 (2022)
https://doi.org/10.1063/5.0086185
Published: May 2022
View article titled, High extinction ratio thermo-optic based reconfigurable optical logic gates for programmable PICs
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Journal Articles

A silicon source of heralded single photons at 2 μm

Editor’s Pick
S. Signorini, M. Sanna, S. Piccione, M. Ghulinyan, P. Tidemand-Lichtenberg, C. Pedersen, L. Pavesi
Journal: APL Photonics
APL Photonics 6, 126103 (2021)
https://doi.org/10.1063/5.0063393
Published: December 2021
View article titled, A silicon source of heralded single photons at 2 <em>μ</em>m
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Includes: Supplementary data
Journal Articles

On-chip heralded single photon sources

Editor’s Pick
S. Signorini, L. Pavesi
Journal: AVS Quantum Science
AVS Quantum Sci. 2, 041701 (2020)
https://doi.org/10.1116/5.0018594
Published: October 2020
View article titled, On-chip heralded single photon sources
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Journal Articles

Thermo-optic coefficient and nonlinear refractive index of silicon oxynitride waveguides

A. Trenti, M. Borghi, S. Biasi, M. Ghulinyan, F. Ramiro-Manzano, G. Pucker, L. Pavesi
Journal: AIP Advances
AIP Advances 8, 025311 (2018)
https://doi.org/10.1063/1.5018016
Published: February 2018
View article titled, Thermo-optic coefficient and nonlinear refractive index of silicon oxynitride waveguides
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Journal Articles

Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

S. Tondini, G. Pucker, L. Pavesi
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 093108 (2016)
https://doi.org/10.1063/1.4961873
Published: September 2016
View article titled, Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices
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Journal Articles

Multi-mode interference revealed by two photon absorption in silicon rich SiO2 waveguides

S. Manna, F. Ramiro-Manzano, M. Ghulinyan, M. Mancinelli, F. Turri, G. Pucker, L. Pavesi
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 071109 (2015)
https://doi.org/10.1063/1.4913440
Published: February 2015
View article titled, Multi-mode interference revealed by two photon absorption in silicon rich SiO<sub>2</sub> waveguides
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Journal Articles

Infrared photoconductivity of Er-doped Si nanoclusters embedded in a slot waveguide

A. Anopchenko, N. Prtljaga, A. Tengattini, J.-M. Fedeli, L. Pavesi
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 061105 (2013)
https://doi.org/10.1063/1.4817818
Published: August 2013
View article titled, Infrared photoconductivity of Er-doped Si nanoclusters embedded in a slot waveguide
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Journal Articles

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

A. Anopchenko, A. Tengattini, A. Marconi, N. Prtljaga, J. M. Ramírez, O. Jambois, Y. Berencén, D. Navarro-Urrios, B. Garrido, F. Milesi, J.-P. Colonna, J.-M. Fedeli, L. Pavesi
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 063102 (2012)
https://doi.org/10.1063/1.3694680
Published: March 2012
View article titled, Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes
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Journal Articles

Modeling of silicon nanocrystals based down-shifter for enhanced silicon solar cell performance

F. Sgrignuoli, G. Paternoster, A. Marconi, P. Ingenhoven, A. Anopchenko, G. Pucker, L. Pavesi
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 034303 (2012)
https://doi.org/10.1063/1.3679140
Published: February 2012
View article titled, Modeling of silicon nanocrystals based down-shifter for enhanced silicon solar cell performance
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Journal Articles

Copropagating pump and probe experiments on Si-nc in SiO2 rib waveguides doped with Er: The optical role of non-emitting ions

D. Navarro-Urrios, F. Ferrarese Lupi, N. Prtljaga, A. Pitanti, O. Jambois, J. M. Ramírez, Y. Berencén, N. Daldosso, B. Garrido, L. Pavesi
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 231114 (2011)
https://doi.org/10.1063/1.3665950
Published: December 2011
View article titled, Copropagating pump and probe experiments on Si-nc in SiO<sub>2</sub> rib waveguides doped with Er: The optical role of non-emitting ions
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Journal Articles

Graded-size Si quantum dot ensembles for efficient light-emitting diodes

A. Anopchenko, A. Marconi, M. Wang, G. Pucker, P. Bellutti, L. Pavesi
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 181108 (2011)
https://doi.org/10.1063/1.3658625
Published: November 2011
View article titled, Graded-size Si quantum dot ensembles for efficient light-emitting diodes
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Journal Articles

Electroluminescence and charge storage characteristics of quantum confined germanium nanocrystals

S. Das, R. K. Singha, A. Dhar, S. K. Ray, A. Anopchenko, N. Daldosso, L. Pavesi
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 024310 (2011)
https://doi.org/10.1063/1.3610396
Published: July 2011
View article titled, Electroluminescence and charge storage characteristics of quantum confined germanium nanocrystals
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Journal Articles

Power efficiency estimation of silicon nanocrystals based light emitting devices in alternating current regime

A. Marconi, A. Anopchenko, G. Pucker, L. Pavesi
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 201103 (2011)
https://doi.org/10.1063/1.3592566
Published: May 2011
View article titled, Power efficiency estimation of silicon nanocrystals based light emitting devices in alternating current regime
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Journal Articles

Energy transfer mechanism and Auger effect in Er 3 + coupled silicon nanoparticle samples

A. Pitanti, D. Navarro-Urrios, N. Prtljaga, N. Daldosso, F. Gourbilleau, R. Rizk, B. Garrido, L. Pavesi
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 053518 (2010)
https://doi.org/10.1063/1.3476286
Published: September 2010
View article titled, Energy transfer mechanism and Auger effect in Er 3 + coupled silicon nanoparticle samples
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Journal Articles

Optically active Er 3 + ions in SiO 2 codoped with Si nanoclusters

D. Navarro-Urrios, Y. Lebour, O. Jambois, B. Garrido, A. Pitanti, N. Daldosso, L. Pavesi, J. Cardin, K. Hijazi, L. Khomenkova, F. Gourbilleau, R. Rizk
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 093107 (2009)
https://doi.org/10.1063/1.3253753
Published: November 2009
View article titled, Optically active Er 3 + ions in SiO 2 codoped with Si nanoclusters
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Journal Articles

Low-voltage onset of electroluminescence in nanocrystalline- Si / SiO 2 multilayers

A. Anopchenko, A. Marconi, E. Moser, S. Prezioso, M. Wang, L. Pavesi, G. Pucker, P. Bellutti
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 033104 (2009)
https://doi.org/10.1063/1.3194315
Published: August 2009
View article titled, Low-voltage onset of electroluminescence in nanocrystalline- Si / SiO 2 multilayers
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Journal Articles

High power efficiency in Si-nc / SiO 2 multilayer light emitting devices by bipolar direct tunneling

A. Marconi, A. Anopchenko, M. Wang, G. Pucker, P. Bellutti, L. Pavesi
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 221110 (2009)
https://doi.org/10.1063/1.3147164
Published: June 2009
View article titled, High power efficiency in Si-nc / SiO 2 multilayer light emitting devices by bipolar direct tunneling
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Journal Articles

Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices

S. Prezioso, S. M. Hossain, A. Anopchenko, L. Pavesi, M. Wang, G. Pucker, P. Bellutti
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 062108 (2009)
https://doi.org/10.1063/1.3081410
Published: February 2009
View article titled, Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices
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Journal Articles

Light emission properties and mechanism of low-temperature prepared amorphous SiN X films. II. Defect states electroluminescence

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, L. Pavesi
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 083505 (2008)
https://doi.org/10.1063/1.2996299
Published: October 2008
View article titled, Light emission properties and mechanism of low-temperature prepared amorphous SiN X films. II. Defect states electroluminescence
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Journal Articles

Light emission properties and mechanism of low-temperature prepared amorphous SiN X films. I. Room-temperature band tail states photoluminescence

M. Wang, M. Xie, L. Ferraioli, Z. Yuan, D. Li, D. Yang, L. Pavesi
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 083504 (2008)
https://doi.org/10.1063/1.2996292
Published: October 2008
View article titled, Light emission properties and mechanism of low-temperature prepared amorphous SiN X films. I. Room-temperature band tail states photoluminescence
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