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Journal Articles

On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

P. Vennéguès, L. Largeau, V. Brändli, B. Damilano, K. Tavernier, R. Bernard, A. Courville, S. Rennesson, F. Semond, G. Feuillet, C. Cornet
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 165102 (2022)
https://doi.org/10.1063/5.0111558
Published: October 2022
View article titled, On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations
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Includes: Supplementary data
Journal Articles

Exploring the shear strain contribution to the uniaxial magnetic anisotropy of (Ga,Mn)As

M. Kraimia, L. Largeau, K. Boujdaria, B. Croset, C. Mocuta, A. Lemaître, C. Gourdon, L. Thevenard
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 093901 (2020)
https://doi.org/10.1063/1.5140078
Published: March 2020
View article titled, Exploring the shear strain contribution to the uniaxial magnetic anisotropy of (Ga,Mn)As
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Journal Articles

Proposition of a model elucidating the AlN-on-Si (111) microstructure

N. Mante, S. Rennesson, E. Frayssinet, L. Largeau, F. Semond, J. L. Rouvière, G. Feuillet, P. Vennéguès
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 215701 (2018)
https://doi.org/10.1063/1.5017550
Published: May 2018
View article titled, Proposition of a model elucidating the AlN-on-Si (111) microstructure
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Journal Articles

Vector network analyzer measurement of the amplitude of an electrically excited surface acoustic wave and validation by X-ray diffraction

I. S. Camara, B. Croset, L. Largeau, P. Rovillain, L. Thevenard, J.-Y. Duquesne
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 044503 (2017)
https://doi.org/10.1063/1.4974947
Published: January 2017
View article titled, Vector network analyzer measurement of the amplitude of an electrically excited surface acoustic wave and validation by X-ray diffraction
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Journal Articles

Abrupt GaP/Si hetero-interface using bistepped Si buffer

Y. Ping Wang, J. Stodolna, M. Bahri, J. Kuyyalil, T. Nguyen Thanh, S. Almosni, R. Bernard, R. Tremblay, M. Da Silva, A. Létoublon, T. Rohel, K. Tavernier, L. Largeau, G. Patriarche, A. Le Corre, A. Ponchet, C. Magen, C. Cornet, O. Durand
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 191603 (2015)
https://doi.org/10.1063/1.4935494
Published: November 2015
View article titled, Abrupt GaP/Si hetero-interface using bistepped Si buffer
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Journal Articles

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

L. Cerutti, A. Castellano, J.-B. Rodriguez, M. Bahri, L. Largeau, A. Balocchi, K. Madiomanana, F. Lelarge, G. Patriarche, X. Marie, E. Tournié
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 101102 (2015)
https://doi.org/10.1063/1.4914884
Published: March 2015
View article titled, GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-<em>μ</em>m
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Journal Articles

Ferroelectric Pb(Zr,Ti)O3 epitaxial layers on GaAs

L. Louahadj, D. Le Bourdais, L. Largeau, G. Agnus, L. Mazet, R. Bachelet, P. Regreny, D. Albertini, V. Pillard, C. Dubourdieu, B. Gautier, P. Lecoeur, G. Saint-Girons
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 212901 (2013)
https://doi.org/10.1063/1.4831738
Published: November 2013
View article titled, Ferroelectric Pb(Zr,Ti)O<sub>3</sub> epitaxial layers on GaAs
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Journal Articles

Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate

K. Naji, G. Saint-Girons, J. Penuelas, G. Patriarche, L. Largeau, H. Dumont, P. Rojo-Romeo, M. Gendry
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 243113 (2013)
https://doi.org/10.1063/1.4811782
Published: June 2013
View article titled, Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate
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Journal Articles

Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

A. Talneau, C. Roblin, A. Itawi, O. Mauguin, L. Largeau, G. Beaudouin, I. Sagnes, G. Patriarche, C. Pang, H. Benisty
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 212101 (2013)
https://doi.org/10.1063/1.4807890
Published: May 2013
View article titled, Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon
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Journal Articles

Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers

M. de Kersauson, M. Prost, A. Ghrib, M. El Kurdi, S. Sauvage, G. Beaudoin, L. Largeau, O. Mauguin, R. Jakomin, I. Sagnes, G. Ndong, M. Chaigneau, R. Ossikovski, P. Boucaud
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 183508 (2013)
https://doi.org/10.1063/1.4804266
Published: May 2013
View article titled, Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers
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Journal Articles

Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer

T. Niazi, M. Cormier, D. Lucot, L. Largeau, V. Jeudy, J. Cibert, A. Lemaître
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 122403 (2013)
https://doi.org/10.1063/1.4798258
Published: March 2013
View article titled, Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer
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Journal Articles

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

M. Abid, T. Moudakir, G. Orsal, S. Gautier, A. En Naciri, Z. Djebbour, J.-H. Ryou, G. Patriarche, L. Largeau, H. J. Kim, Z. Lochner, K. Pantzas, D. Alamarguy, F. Jomard, R. D. Dupuis, J.-P. Salvestrini, P. L. Voss, A. Ougazzaden
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 051101 (2012)
https://doi.org/10.1063/1.3679703
Published: January 2012
View article titled, Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
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Journal Articles

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

G. Jacopin, L. Rigutti, L. Largeau, F. Fortuna, F. Furtmayr, F. H. Julien, M. Eickhoff, M. Tchernycheva
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 064313 (2011)
https://doi.org/10.1063/1.3638698
Published: September 2011
View article titled, Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires
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Journal Articles

High quality tensile-strained n -doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition

R. Jakomin, M. de Kersauson, M. El Kurdi, L. Largeau, O. Mauguin, G. Beaudoin, S. Sauvage, R. Ossikovski, G. Ndong, M. Chaigneau, I. Sagnes, P. Boucaud
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 091901 (2011)
https://doi.org/10.1063/1.3559231
Published: February 2011
View article titled, High quality tensile-strained n -doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition
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Journal Articles

Atomic structure of tip apex for spin-polarized scanning tunneling microscopy

G. Rodary, J.-C. Girard, L. Largeau, C. David, O. Mauguin, Z.-Z. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 082505 (2011)
https://doi.org/10.1063/1.3558920
Published: February 2011
View article titled, Atomic structure of tip apex for spin-polarized scanning tunneling microscopy
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Journal Articles

Injection of midinfrared surface plasmon polaritons with an integrated device

J.-P. Tetienne, A. Bousseksou, D. Costantini, R. Colombelli, A. Babuty, I. Moldovan-Doyen, Y. De Wilde, C. Sirtori, G. Beaudoin, L. Largeau, O. Mauguin, I. Sagnes
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 211110 (2010)
https://doi.org/10.1063/1.3519985
Published: November 2010
View article titled, Injection of midinfrared surface plasmon polaritons with an integrated device
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Journal Articles

Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO 3 / Si templates

B. Gobaut, J. Penuelas, J. Cheng, A. Chettaoui, L. Largeau, G. Hollinger, G. Saint-Girons
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 201908 (2010)
https://doi.org/10.1063/1.3520143
Published: November 2010
View article titled, Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO 3 / Si templates
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Journal Articles

Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)

A. Ouerghi, R. Belkhou, M. Marangolo, M. G. Silly, S. El Moussaoui, M. Eddrief, L. Largeau, M. Portail, F. Sirotti
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 161905 (2010)
https://doi.org/10.1063/1.3497287
Published: October 2010
View article titled, Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)
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Journal Articles

Epitaxial growth of germanium on silicon using a Gd 2 O 3 / Si (111) crystalline template

G. Niu, L. Largeau, G. Saint-Girons, B. Vilquin, J. Cheng, O. Mauguin, G. Hollinger
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 28, 1187–1190 (2010)
https://doi.org/10.1116/1.3478301
Published: September 2010
View article titled, Epitaxial growth of germanium on silicon using a Gd 2 O 3 / Si (111) crystalline template
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Journal Articles

Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires

J.-M. Jancu, K. Gauthron, L. Largeau, G. Patriarche, J.-C. Harmand, P. Voisin
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 041910 (2010)
https://doi.org/10.1063/1.3473779
Published: July 2010
View article titled, Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires
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