1-20 of 149
L. J. Brillson
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions

Free
G. M. Foster, G. Faber, Y.-F. Yao, C. C. Yang, E. R. Heller, D. C. Look, L. J. Brillson
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 143506 (2016)
https://doi.org/10.1063/1.4963888
Published: October 2016
View articletitled, Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions
Open the PDF for Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions in another window
Includes: Supplementary data
Journal Articles

Native point defect formation in flash sintered ZnO studied by depth-resolved cathodoluminescence spectroscopy

Free
Hantian Gao, Thaddeus J. Asel, Jon W. Cox, Yuanyao Zhang, Jian Luo, L. J. Brillson
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 105302 (2016)
https://doi.org/10.1063/1.4962316
Published: September 2016
View articletitled, Native point defect formation in flash sintered ZnO studied by depth-resolved cathodoluminescence spectroscopy
Open the PDF for Native point defect formation in flash sintered ZnO studied by depth-resolved cathodoluminescence spectroscopy in another window
Journal Articles

Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO3

Available to Purchase
Z. Q. Zeng, A. Podpirka, S. W. Kirchoefer, T. J. Asel, L. J. Brillson
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 182903 (2015)
https://doi.org/10.1063/1.4919891
Published: May 2015
View articletitled, Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO3
Open the PDF for Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO3 in another window
Includes: Supplementary data
Journal Articles

Impact of Mg content on native point defects in MgxZn1−xO (0 ≤ x ≤ 0.56)

Open Access
J. Perkins, G. M. Foster, M. Myer, S. Mehra, J. M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl, L. J. Brillson
Journal: APL Materials
APL Mater. 3, 062801 (2015)
https://doi.org/10.1063/1.4915491
Published: March 2015
View articletitled, Impact of Mg content on native point defects in MgxZn1−xO (0 ≤ x ≤ 0.56)
Open the PDF for Impact of Mg content on native point defects in MgxZn1−xO (0 ≤ x ≤ 0.56) in another window
Includes: Supplementary data
Journal Articles

Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO

Available to Purchase
Zhichun Zhang, V. Quemener, C.-H. Lin, B. G. Svensson, L. J. Brillson
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 072107 (2013)
https://doi.org/10.1063/1.4818712
Published: August 2013
View articletitled, Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO
Open the PDF for Characterization of polishing induced defects and hydrofluoric acid passivation effect in ZnO in another window
Journal Articles

Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system

Available to Purchase
M. M. Rutkowski, K. M. McNicholas, Zhaoquan Zeng, L. J. Brillson
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 84, 065105 (2013)
https://doi.org/10.1063/1.4804195
Published: June 2013
View articletitled, Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system
Open the PDF for Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system in another window
Journal Articles

Depth resolved studies of SrTiO3 defects using x-ray excited optical luminescence and cathodoluminescence

Available to Purchase
R. A. Rosenberg, Y. Choi, K. Vijayalakshmi, M. Kareev, J. Tchakhalian, Snjezana Balaz, L. J. Brillson
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 192910 (2013)
https://doi.org/10.1063/1.4807117
Published: May 2013
View articletitled, Depth resolved studies of SrTiO3 defects using x-ray excited optical luminescence and cathodoluminescence
Open the PDF for Depth resolved studies of SrTiO3 defects using x-ray excited optical luminescence and cathodoluminescence in another window
Journal Articles

Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO

Available to Purchase
Z. Zhang, K. E. Knutsen, T. Merz, A. Yu. Kuznetsov, B. G. Svensson, L. J. Brillson
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 042107 (2012)
https://doi.org/10.1063/1.3679708
Published: January 2012
View articletitled, Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO
Open the PDF for Thermal process dependence of Li configuration and electrical properties of Li-doped ZnO in another window
Journal Articles

Impact of ultrathin Al 2 O 3 diffusion barriers on defects in high- k   LaLuO 3 on Si

Available to Purchase
S. Shen, Y. Liu, R. G. Gordon, L. J. Brillson
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 172902 (2011)
https://doi.org/10.1063/1.3583462
Published: April 2011
View articletitled, Impact of ultrathin Al 2 O 3 diffusion barriers on defects in high- k   LaLuO 3 on Si
Open the PDF for Impact of ultrathin Al 2 O 3 diffusion barriers on defects in high- k   LaLuO 3 on Si in another window
Journal Articles

Nanoscale depth-resolved electronic properties of SiO 2 / SiO x / SiO 2 for device-tolerant electronics

Available to Purchase
E. J. Katz, Z. Zhang, H. L. Hughes, K. -B. Chung, G. Lucovsky, L. J. Brillson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 011027 (2011)
https://doi.org/10.1116/1.3543712
Published: January 2011
View articletitled, Nanoscale depth-resolved electronic properties of SiO 2 / SiO x / SiO 2 for device-tolerant electronics
Open the PDF for Nanoscale depth-resolved electronic properties of SiO 2 / SiO x / SiO 2 for device-tolerant electronics in another window
Journal Articles

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

Available to Purchase
Chung-Han Lin, D. R. Doutt, U. K. Mishra, T. A. Merz, L. J. Brillson
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 223502 (2010)
https://doi.org/10.1063/1.3521392
Published: November 2010
View articletitled, Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale
Open the PDF for Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale in another window
Journal Articles

X-ray photoemission spectroscopy of Sr 2 FeMoO 6 film stoichiometry and valence state

Available to Purchase
M. Rutkowski, A. J. Hauser, F. Y. Yang, R. Ricciardo, T. Meyer, P. M. Woodward, A Holcombe, P. A. Morris, L. J. Brillson
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 28, 1240–1244 (2010)
https://doi.org/10.1116/1.3478677
Published: September 2010
View articletitled, X-ray photoemission spectroscopy of Sr 2 FeMoO 6 film stoichiometry and valence state
Open the PDF for X-ray photoemission spectroscopy of Sr 2 FeMoO 6 film stoichiometry and valence state in another window
Journal Articles

Surface, bulk, and interface electronic states of epitaxial BiFeO 3 films

Available to Purchase
Jun Zhang, M. Rutkowski, L. W. Martin, T. Conry, R. Ramesh, J. F. Ihlefeld, A. Melville, D. G. Schlom, L. J. Brillson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 2012–2014 (2009)
https://doi.org/10.1116/1.3130152
Published: July 2009
View articletitled, Surface, bulk, and interface electronic states of epitaxial BiFeO 3 films
Open the PDF for Surface, bulk, and interface electronic states of epitaxial BiFeO 3 films in another window
Journal Articles

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Available to Purchase
Chung-Han Lin, T. A. Merz, D. R. Doutt, M. J. Hetzer, Jungwoo Joh, Jesús A. del Alamo, U. K. Mishra, L. J. Brillson
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 033510 (2009)
https://doi.org/10.1063/1.3189102
Published: July 2009
View articletitled, Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors
Open the PDF for Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors in another window
Journal Articles

Polarity-related asymetry at ZnO surfaces and metal interfaces

Available to Purchase
Yufeng Dong, Z.-Q. Fang, D. C. Look, D. R. Doutt, M. J. Hetzer, L. J. Brillson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 1710–1716 (2009)
https://doi.org/10.1116/1.3119681
Published: May 2009
View articletitled, Polarity-related asymetry at ZnO surfaces and metal interfaces
Open the PDF for Polarity-related asymetry at ZnO surfaces and metal interfaces in another window
Journal Articles

Depth-resolved subsurface defects in chemically etched SrTiO 3

Available to Purchase
Jun Zhang, D. Doutt, T. Merz, J. Chakhalian, M. Kareev, J. Liu, L. J. Brillson
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 092904 (2009)
https://doi.org/10.1063/1.3093671
Published: March 2009
View articletitled, Depth-resolved subsurface defects in chemically etched SrTiO 3
Open the PDF for Depth-resolved subsurface defects in chemically etched SrTiO 3 in another window
Journal Articles

Impact of near-surface defects and morphology on ZnO luminescence

Available to Purchase
D. Doutt, H. L. Mosbacker, G. Cantwell, J. Zhang, J. J. Song, L. J. Brillson
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 042111 (2009)
https://doi.org/10.1063/1.3077015
Published: January 2009
View articletitled, Impact of near-surface defects and morphology on ZnO luminescence
Open the PDF for Impact of near-surface defects and morphology on ZnO luminescence in another window
Journal Articles

Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy

Available to Purchase
Z.-Q. Fang, B. Claflin, D. C. Look, Y. F. Dong, H. L. Mosbacker, L. J. Brillson
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 063707 (2008)
https://doi.org/10.1063/1.2978374
Published: September 2008
View articletitled, Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy
Open the PDF for Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy in another window
Journal Articles

Zn- and O-face polarity effects at ZnO surfaces and metal interfaces

Available to Purchase
Yufeng Dong, Z-Q. Fang, D. C. Look, G. Cantwell, J. Zhang, J. J. Song, L. J. Brillson
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 072111 (2008)
https://doi.org/10.1063/1.2974983
Published: August 2008
View articletitled, Zn- and O-face polarity effects at ZnO surfaces and metal interfaces
Open the PDF for Zn- and O-face polarity effects at ZnO surfaces and metal interfaces in another window
Journal Articles

Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces

Available to Purchase
D. R. Doutt, C. Zgrabik, H. L. Mosbacker, L. J. Brillson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1477–1482 (2008)
https://doi.org/10.1116/1.2919158
Published: August 2008
View articletitled, Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces
Open the PDF for Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces in another window