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L. H. Kuo
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Journal Articles

The role of zinc pre-exposure in low-defect ZnSe growth on As-stabilized GaAs (001)

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S. Miwa, L. H. Kuo, K. Kimura, T. Yasuda, A. Ohtake, C. G. Jin, T. Yao
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 939–941 (1998)
https://doi.org/10.1063/1.122045
Published: August 1998
View articletitled, The role of zinc pre-exposure in low-defect ZnSe growth on As-stabilized GaAs (001)
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Journal Articles

Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters

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H. Akinaga, J. De Boeck, G. Borghs, S. Miyanishi, A. Asamitsu, W. Van Roy, Y. Tomioka, L. H. Kuo
Journal: Applied Physics Letters
Appl. Phys. Lett. 72, 3368–3370 (1998)
https://doi.org/10.1063/1.121606
Published: June 1998
View articletitled, Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters
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Journal Articles

ZnSe epitaxy on a GaAs(110) surface

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S. Miwa, L. H. Kuo, K. Kimura, A. Ohtake, T. Yasuda, C. G. Jin, T. Yao
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 1192–1194 (1997)
https://doi.org/10.1063/1.119622
Published: September 1997
View articletitled, ZnSe epitaxy on a GaAs(110) surface
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Journal Articles

Atomic nitrogen doping in p -ZnSe molecular beam epitaxial growth with almost 100% activation ratio

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K. Kimura, S. Miwa, C. G. Jin, L. H. Kuo, T. Yasuda, A. Ohtake, K. Tanaka, T. Yao, H. Kobayashi
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 1077–1079 (1997)
https://doi.org/10.1063/1.119733
Published: August 1997
View articletitled, Atomic nitrogen doping in p -ZnSe molecular beam epitaxial growth with almost 100% activation ratio
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Journal Articles

The effect of nitrogen ions emitted from a plasma source on molecular beam epitaxial growth of p-ZnSe:N

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K. Kimura, S. Miwa, H. Kajiyama, T. Yasuda, L. H. Kuo, C. G. Jin, K. Tanaka, T. Yao
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 485–487 (1997)
https://doi.org/10.1063/1.119586
Published: July 1997
View articletitled, The effect of nitrogen ions emitted from a plasma source on molecular beam epitaxial growth of p-ZnSe:N
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Journal Articles

Reflectance-difference studies of interface-formation and initial-growth processes in ZnSe/GaAs(001) heteroepitaxy

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T. Yasuda, K. Kimura, S. Miwa, L. H. Kuo, A. Ohtake, C. G. Jin, K. Tanaka, T. Yao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 15, 1212–1220 (1997)
https://doi.org/10.1116/1.589441
Published: July 1997
View articletitled, Reflectance-difference studies of interface-formation and initial-growth processes in ZnSe/GaAs(001) heteroepitaxy
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Journal Articles

Nature and origins of stacking faults from a ZnSe/GaAs interface

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L. H. Kuo, K. Kimura, A. Ohtake, S. Miwa, T. Yasuda, T. Yao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 15, 1241–1253 (1997)
https://doi.org/10.1116/1.589445
Published: July 1997
View articletitled, Nature and origins of stacking faults from a ZnSe/GaAs interface
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Journal Articles

Growth mode and defect generation in ZnSe heteroepitaxy on Te-terminated GaAs(001) surfaces

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A. Ohtake, L. H. Kuo, T. Yasuda, K. Kimura, S. Miwa, T. Yao, K. Nakajima, K. Kimura
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 15, 1254–1259 (1997)
https://doi.org/10.1116/1.589446
Published: July 1997
View articletitled, Growth mode and defect generation in ZnSe heteroepitaxy on Te-terminated GaAs(001) surfaces
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Journal Articles

Structural and magnetic properties of epitaxial (0001) MnSb thin films grown on (111) B GaAs: Influence of interface quality

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H. Akinaga, S. Miyanishi, W. Van Roy, L. H. Kuo
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 2472–2474 (1997)
https://doi.org/10.1063/1.118860
Published: May 1997
View articletitled, Structural and magnetic properties of epitaxial (0001) MnSb thin films grown on (111) B GaAs: Influence of interface quality
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Journal Articles

Efficient doping of nitrogen with high activation ratio into ZnSe using a high-power plasma source

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K. Kimura, S. Miwa, T. Yasuda, L. H. Kuo, C. G. Jin, K. Tanaka, T. Yao
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 81–83 (1997)
https://doi.org/10.1063/1.119314
Published: January 1997
View articletitled, Efficient doping of nitrogen with high activation ratio into ZnSe using a high-power plasma source
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Journal Articles

Dependence of generation and structures of stacking faults on growing surface stoichiometries in ZnSe/GaAs

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L. H. Kuo, K. Kimura, S. Miwa, T. Yasuda, T. Yao
Journal: Applied Physics Letters
Appl. Phys. Lett. 69, 1408–1410 (1996)
https://doi.org/10.1063/1.117597
Published: September 1996
View articletitled, Dependence of generation and structures of stacking faults on growing surface stoichiometries in ZnSe/GaAs
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Journal Articles

Epitaxial MnGa/(Mn,Ga,As)/MnGa trilayers: Growth and magnetic properties

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W. Van Roy, H. Akinaga, S. Miyanishi, K. Tanaka, L. H. Kuo
Journal: Applied Physics Letters
Appl. Phys. Lett. 69, 711–713 (1996)
https://doi.org/10.1063/1.117815
Published: July 1996
View articletitled, Epitaxial MnGa/(Mn,Ga,As)/MnGa trilayers: Growth and magnetic properties
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Journal Articles

In situ characterization of ZnSe/GaAs(100) interfaces by reflectance difference spectroscopy

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T. Yasuda, L. H. Kuo, K. Kimura, S. Miwa, C. G. Jin, K. Tanaka, T. Yao
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 14, 3052–3057 (1996)
https://doi.org/10.1116/1.589063
Published: July 1996
View articletitled, In situ characterization of ZnSe/GaAs(100) interfaces by reflectance difference spectroscopy
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Journal Articles

Molecular beam epitaxy of low defect density ( ⩽ 1×104 cm−2) ZnSSe on GaAs

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B. J. Wu, G. M. Haugen, J. M. DePuydt, L. H. Kuo, L. Salamanca‐Riba
Journal: Applied Physics Letters
Appl. Phys. Lett. 68, 2828–2830 (1996)
https://doi.org/10.1063/1.116338
Published: May 1996
View articletitled, Molecular beam epitaxy of low defect density ( ⩽ 1×104 cm−2) ZnSSe on GaAs
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Journal Articles

Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs

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L. H. Kuo, K. Kimura, T. Yasuda, S. Miwa, C. G. Jin, K. Tanaka, T. Yao
Journal: Applied Physics Letters
Appl. Phys. Lett. 68, 2413–2415 (1996)
https://doi.org/10.1063/1.116151
Published: April 1996
View articletitled, Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs
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Journal Articles

Growth and characterization of II–VI blue light‐emitting diodes using short period superlattices

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B. J. Wu, L. H. Kuo, J. M. DePuydt, G. M. Haugen, M. A. Haase, L. Salamanca‐Riba
Journal: Applied Physics Letters
Appl. Phys. Lett. 68, 379–381 (1996)
https://doi.org/10.1063/1.116691
Published: January 1996
View articletitled, Growth and characterization of II–VI blue light‐emitting diodes using short period superlattices
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Journal Articles

Dependence of the density and type of stacking faults on the surface treatment of the substrate and growth mode in ZnSxSe1−x/ZnSe buffer layer/GaAs heterostructures

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L. H. Kuo, L. Salamanca‐Riba, B. J. Wu, G. Hofler, J. M. DePuydt, H. Cheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 67, 3298–3300 (1995)
https://doi.org/10.1063/1.115226
Published: November 1995
View articletitled, Dependence of the density and type of stacking faults on the surface treatment of the substrate and growth mode in ZnSxSe1−x/ZnSe buffer layer/GaAs heterostructures
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Journal Articles

Generation of degradation defects, stacking faults, and misfit dislocations in ZnSe‐based films grown on GaAs

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L. H. Kuo, L. Salamanca‐Riba, B. J. Wu, G. M. Haugen, J. M. DePuydt, G. Hofler, H. Cheng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 13, 1694–1704 (1995)
https://doi.org/10.1116/1.587880
Published: July 1995
View articletitled, Generation of degradation defects, stacking faults, and misfit dislocations in ZnSe‐based films grown on GaAs
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Journal Articles

Wide band gap MgZnSSe grown on (001) GaAs by molecular beam epitaxy

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B. J. Wu, J. M. DePuydt, G. M. Haugen, G. E. Höfler, M. A. Haase, H. Cheng, S. Guha, J. Qiu, L. H. Kuo, L. Salamanca‐Riba
Journal: Applied Physics Letters
Appl. Phys. Lett. 66, 3462–3464 (1995)
https://doi.org/10.1063/1.113388
Published: June 1995
View articletitled, Wide band gap MgZnSSe grown on (001) GaAs by molecular beam epitaxy
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Journal Articles

Composition modulation in lattice matched Zn1−xMgxSySe1−y/ZnSe buffer layer/GaAs heterostructures

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L. H. Kuo, L. Salamanca‐Riba, B. J. Wu, J. M. DePuydt, G. M. Haugen, H. Cheng, S. Guha, M. A. Haase
Journal: Applied Physics Letters
Appl. Phys. Lett. 65, 1230–1232 (1994)
https://doi.org/10.1063/1.112079
Published: September 1994
View articletitled, Composition modulation in lattice matched Zn1−xMgxSySe1−y/ZnSe buffer layer/GaAs heterostructures
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