1-19 of 19
L. F. Voss
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Monte Carlo transport analysis to assess intensity dependent response of a carbon-doped GaN photoconductor

W. Milestone, D. Guo, M. Sanati, K. M. Dowling, S. Hau-Riege, L. F. Voss, A. Conway, R. P. Joshi
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 195703 (2021)
https://doi.org/10.1063/5.0040173
Published: May 2021
View article titled, Monte Carlo transport analysis to assess intensity dependent response of a carbon-doped GaN photoconductor
Open the PDF for Monte Carlo transport analysis to assess intensity dependent response of a carbon-doped GaN photoconductor in another window
Journal Articles

High temperature isotropic and anisotropic etching of silicon carbide using forming gas

C. D. Frye, Devin Funaro, A. M. Conway, D. L. Hall, P. V. Grivickas, M. Bora, L. F. Voss
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 013203 (2021)
https://doi.org/10.1116/6.0000533
Published: January 2021
View article titled, High temperature isotropic and anisotropic etching of silicon carbide using forming gas
Open the PDF for High temperature isotropic and anisotropic etching of silicon carbide using forming gas in another window
Journal Articles

Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing

P. Grivickas, P. Ščajev, N. Kazuchits, S. Lastovskii, L. F. Voss, A. M. Conway, A. Mazanik, O. Korolik, V. Bikbajevas, V. Grivickas
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 242103 (2020)
https://doi.org/10.1063/5.0028363
Published: December 2020
View article titled, Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing
Open the PDF for Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing in another window
Journal Articles

Carrier recombination parameters in diamond after surface boron implantation and annealing

P. Grivickas, P. Ščajev, N. Kazuchits, A. Mazanik, O. Korolik, L. F. Voss, A. M. Conway, D. L. Hall, M. Bora, L. Subačius, V. Bikbajevas, V. Grivickas
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 245707 (2020)
https://doi.org/10.1063/5.0004881
Published: June 2020
View article titled, Carrier recombination parameters in diamond after surface boron implantation and annealing
Open the PDF for Carrier recombination parameters in diamond after surface boron implantation and annealing in another window
Journal Articles

Intrinsic shape of free carrier absorption spectra in 4H-SiC

P. Grivickas, K. Redeckas, K. Gulbinas, A. M. Conway, L. F. Voss, M. Bora, S. Sampayan, M. Vengris, V. Grivickas
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 225701 (2019)
https://doi.org/10.1063/1.5095161
Published: June 2019
View article titled, Intrinsic shape of free carrier absorption spectra in 4H-SiC
Open the PDF for Intrinsic shape of free carrier absorption spectra in 4H-SiC in another window
Journal Articles

Selenium-iodide: A low melting point eutectic semiconductor

L. F. Voss, J. W. Murphy, Q. Shao, R. A. Henderson, C. D. Frye, M. A. Stoyer, R. J. Nikolic
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 242103 (2018)
https://doi.org/10.1063/1.5060269
Published: December 2018
View article titled, Selenium-iodide: A low melting point eutectic semiconductor
Open the PDF for Selenium-iodide: A low melting point eutectic semiconductor in another window
Journal Articles

Blue shift of GaAs micropillars strained with silicon nitride

L. F. Voss, Q. Shao, A. M. Conway, C. E. Reinhardt, T. A. Laurence, R. J. Nikolic
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 212104 (2013)
https://doi.org/10.1063/1.4831798
Published: November 2013
View article titled, Blue shift of GaAs micropillars strained with silicon nitride
Open the PDF for Blue shift of GaAs micropillars strained with silicon nitride in another window
Journal Articles

X-ray photoemission analysis of chemically modified TlBr surfaces for improved radiation detectors

A. J. Nelson, L. F. Voss, P. R. Beck, R. T. Graff, A. M. Conway, R. J. Nikolic, S. A. Payne, J.-S. Lee, H. Kim, L. Cirignano, K. Shah
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 143713 (2013)
https://doi.org/10.1063/1.4801793
Published: April 2013
View article titled, X-ray photoemission analysis of chemically modified TlBr surfaces for improved radiation detectors
Open the PDF for X-ray photoemission analysis of chemically modified TlBr surfaces for improved radiation detectors in another window
Journal Articles

High aspect ratio composite structures with 48.5% thermal neutron detection efficiency

Q. Shao, L. F. Voss, A. M. Conway, R. J. Nikolic, M. A. Dar, C. L. Cheung
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 063505 (2013)
https://doi.org/10.1063/1.4792703
Published: February 2013
View article titled, High aspect ratio composite structures with 48.5% thermal neutron detection efficiency
Open the PDF for High aspect ratio composite structures with 48.5% thermal neutron detection efficiency in another window
Journal Articles

Planarization of high aspect ratio p - i - n diode pillar arrays for blanket electrical contacts

L. F. Voss, Q. Shao, C. E. Reinhardt, R. T. Graff, A. M. Conway, R. J. Nikolić, Nirmalendu Deo, Chin Li Cheung
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 916–920 (2010)
https://doi.org/10.1116/1.3478306
Published: August 2010
View article titled, Planarization of high aspect ratio p - i - n diode pillar arrays for blanket electrical contacts
Open the PDF for Planarization of high aspect ratio p - i - n diode pillar arrays for blanket electrical contacts in another window
Journal Articles

Surface current reduction in (211) oriented Cd 0.46 Zn 0.04 Te .50 crystals by Ar bombardment

L. F. Voss, P. R. Beck, A. M. Conway, R. T. Graff, R. J. Nikolic, A. J. Nelson, S. A. Payne
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 014510 (2010)
https://doi.org/10.1063/1.3459859
Published: July 2010
View article titled, Surface current reduction in (211) oriented Cd 0.46 Zn 0.04 Te .50 crystals by Ar bombardment
Open the PDF for Surface current reduction in (211) oriented Cd 0.46 Zn 0.04 Te .50 crystals by Ar bombardment in another window
Journal Articles

SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

L. F. Voss, K. Ip, S. J. Pearton, R. J. Shul, M. E. Overberg, A. G. Baca, C. Sanchez, J. Stevens, M. Martinez, M. G. Armendariz, G. A. Wouters
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 487–494 (2008)
https://doi.org/10.1116/1.2837849
Published: March 2008
View article titled, SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices
Open the PDF for SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices in another window
Journal Articles

W 2 B and Cr B 2 diffusion barriers for Ni ∕ Au contacts to p - Ga N

L. F. Voss, L. Stafford, J. S. Wright, S. J. Pearton, F. Ren, I. I. Kravchenko
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 042105 (2007)
https://doi.org/10.1063/1.2762280
Published: July 2007
View article titled, W 2 B and Cr B 2 diffusion barriers for Ni ∕ Au contacts to p - Ga N
Open the PDF for W 2 B and Cr B 2 diffusion barriers for Ni ∕ Au contacts to p - Ga N in another window
Journal Articles

Improved long-term thermal stability of In Ga N ∕ Ga N multiple quantum well light-emitting diodes using Ti B 2 - and Ir-based p -Ohmic contacts

L. Stafford, L. F. Voss, S. J. Pearton, H. T. Wang, F. Ren
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 242103 (2007)
https://doi.org/10.1063/1.2748306
Published: June 2007
View article titled, Improved long-term thermal stability of In Ga N ∕ Ga N multiple quantum well light-emitting diodes using Ti B 2 - and Ir-based p -Ohmic contacts
Open the PDF for Improved long-term thermal stability of In Ga N ∕ Ga N multiple quantum well light-emitting diodes using Ti B 2 - and Ir-based p -Ohmic contacts in another window
Journal Articles

Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN

L. F. Voss, L. Stafford, R. Khanna, B. P. Gila, C. R. Abernathy, S. J. Pearton, F. Ren, I. I. Kravchenko
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 212107 (2007)
https://doi.org/10.1063/1.2742572
Published: May 2007
View article titled, Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN
Open the PDF for Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN in another window
Journal Articles

Schottky barrier height of boride-based rectifying contacts to p - Ga N

L. Stafford, L. F. Voss, S. J. Pearton, J.-J. Chen, F. Ren
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 132110 (2006)
https://doi.org/10.1063/1.2357855
Published: September 2006
View article titled, Schottky barrier height of boride-based rectifying contacts to p - Ga N
Open the PDF for Schottky barrier height of boride-based rectifying contacts to p - Ga N in another window
Journal Articles

Increased Schottky barrier heights for Au on n - and p -type GaN using cryogenic metal deposition

Hung-Ta Wang, S. Jang, T. Anderson, J. J. Chen, B. S. Kang, F. Ren, L. F. Voss, L. Stafford, R. Khanna, B. P. Gila, S. J. Pearton, H. Shen, Jeffrey R. LaRoche, Kurt V. Smith
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 122106 (2006)
https://doi.org/10.1063/1.2356698
Published: September 2006
View article titled, Increased Schottky barrier heights for Au on n - and p -type GaN using cryogenic metal deposition
Open the PDF for Increased Schottky barrier heights for Au on n - and p -type GaN using cryogenic metal deposition in another window
Journal Articles

Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods

L. C. Tien, P. W. Sadik, D. P. Norton, L. F. Voss, S. J. Pearton, H. T. Wang, B. S. Kang, F. Ren, J. Jun, J. Lin
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 222106 (2005)
https://doi.org/10.1063/1.2136070
Published: November 2005
View article titled, Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods
Open the PDF for Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods in another window
Journal Articles

Thermodynamic model of quasiliquid formation on H 2 O ice: Comparison with experiment

B. F. Henson, L. F. Voss, Kevin R. Wilson, J. M. Robinson
Journal: The Journal of Chemical Physics
J. Chem. Phys. 123, 144707 (2005)
https://doi.org/10.1063/1.2056541
Published: October 2005
View article titled, Thermodynamic model of quasiliquid formation on H 2 O ice: Comparison with experiment
Open the PDF for Thermodynamic model of quasiliquid formation on H 2 O ice: Comparison with experiment in another window