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Journal Articles

Effect of surface treatments on ALD Al₂O₃/4H-SiC metal–oxide–semiconductor field-effect transistors

I. U. Jayawardhena, R. P. Ramamurthy, D. Morisette, A. C. Ahyi, R. Thorpe, M. A. Kuroda, L. C. Feldman, S. Dhar

J. Appl. Phys. 129, 075702 (2021)

https://doi.org/10.1063/5.0040586

Published: February 2021

View article titled, Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors

Journal Articles

MgB₂ Josephson junctions produced by focused helium ion beam irradiation

L. Kasaei, T. Melbourne, V. Manichev, L. C. Feldman, T. Gustafsson, Ke Chen, X. X. Xi, B. A. Davidson

AIP Advances 8, 075020 (2018)

https://doi.org/10.1063/1.5030751

Published: July 2018

View article titled, MgB2 Josephson junctions produced by focused helium ion beam irradiation

Journal Articles

Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence

C. Jiao, A. C. Ahyi, C. Xu, D. Morisette, L. C. Feldman, S. Dhar

J. Appl. Phys. 119, 155705 (2016)

https://doi.org/10.1063/1.4947117

Published: April 2016

View article titled, Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence

Journal Articles

Concentration, chemical bonding, and etching behavior of P and N at the SiO₂/SiC(0001) interface

Y. Xu, C. Xu, G. Liu, H. D. Lee, S. M. Shubeita, C. Jiao, A. Modic, A. C. Ahyi, Y. Sharma, A. Wan, J. R. Williams, T. Gustafsson, S. Dhar, E. L. Garfunkel, L. C. Feldman

J. Appl. Phys. 118, 235303 (2015)

https://doi.org/10.1063/1.4937400

Published: December 2015

View article titled, Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface

Journal Articles

Effects of sodium ions on trapping and transport of electrons at the SiO₂/4H-SiC interface

A. F. Basile, A. C. Ahyi, L. C. Feldman, J. R. Williams, P. M. Mooney

J. Appl. Phys. 115, 034502 (2014)

https://doi.org/10.1063/1.4861646

Published: January 2014

View article titled, Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface

Journal Articles

Atomic state and characterization of nitrogen at the SiC/SiO₂ interface

Y. Xu, X. Zhu, H. D. Lee, C. Xu, S. M. Shubeita, A. C. Ahyi, Y. Sharma, J. R. Williams, W. Lu, S. Ceesay, B. R. Tuttle, A. Wan, S. T. Pantelides, T. Gustafsson, E. L. Garfunkel, L. C. Feldman

J. Appl. Phys. 115, 033502 (2014)

https://doi.org/10.1063/1.4861626

Published: January 2014

View article titled, Atomic state and characterization of nitrogen at the SiC/SiO2 interface

Journal Articles

Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

A. Steigerwald, A. B. Hmelo, K. Varga, L. C. Feldman, N. Tolk

J. Appl. Phys. 112, 013514 (2012)

https://doi.org/10.1063/1.4732072

Published: July 2012

View article titled, Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

Journal Articles

Surface damage on diamond membranes fabricated by ion implantation and lift-off

V. S. Drumm, A. D. C. Alves, B. A. Fairchild, K. Ganesan, J. C. McCallum, D. N. Jamieson, S. Prawer, S. Rubanov, R. Kalish, L. C. Feldman

Appl. Phys. Lett. 98, 231904 (2011)

https://doi.org/10.1063/1.3597223

Published: June 2011

View article titled, Surface damage on diamond membranes fabricated by ion implantation and lift-off

Journal Articles

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO₂/SiC interfaces

A. F. Basile, J. Rozen, J. R. Williams, L. C. Feldman, P. M. Mooney

J. Appl. Phys. 109, 064514 (2011)

https://doi.org/10.1063/1.3552303

Published: March 2011

View article titled, Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

Journal Articles

High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

B. R. Tuttle, S. Dhar, S.-H. Ryu, X. Zhu, J. R. Williams, L. C. Feldman, S. T. Pantelides

J. Appl. Phys. 109, 023702 (2011)

https://doi.org/10.1063/1.3533767

Published: January 2011

View article titled, High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

Journal Articles

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO 2 on SiC

John Rozen, Sarit Dhar, M. E. Zvanut, J. R. Williams, L. C. Feldman

J. Appl. Phys. 105, 124506 (2009)

https://doi.org/10.1063/1.3131845

Published: June 2009

View article titled, Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO 2 on SiC

Journal Articles

Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

A. Steigerwald, Y. Xu, J. Qi, J. Gregory, X. Liu, J. K. Furdyna, K. Varga, A. B. Hmelo, G. Lüpke, L. C. Feldman, N. Tolk

Appl. Phys. Lett. 94, 111910 (2009)

https://doi.org/10.1063/1.3099341

Published: March 2009

View article titled, Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

Journal Articles

Erratum: “Pressure dependence of SiO 2 growth kinetics and electrical properties on SiC” [J. Appl. Phys. 103, 023522 (2008)]

E. A. Ray, J. Rozen, S. Dhar, L. C. Feldman, J. R. Williams

J. Appl. Phys. 104, 039908 (2008)

https://doi.org/10.1063/1.2958315

Published: August 2008

View article titled, Erratum: “Pressure dependence of SiO 2 growth kinetics and electrical properties on SiC” [J. Appl. Phys. 103, 023522 (2008)]

Journal Articles

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO 2 / SiC interface

John Rozen, Sarit Dhar, S. K. Dixit, V. V. Afanas’ev, F. O. Roberts, H. L. Dang, Sanwu Wang, S. T. Pantelides, J. R. Williams, L. C. Feldman

J. Appl. Phys. 103, 124513 (2008)

https://doi.org/10.1063/1.2940736

Published: June 2008

View article titled, Increase in oxide hole trap density associated with nitrogen incorporation at the SiO 2 / SiC interface

Journal Articles

Ultrashallow defect states at Si O 2 ∕ 4 H – Si C interfaces

S. Dhar, X. D. Chen, P. M. Mooney, J. R. Williams, L. C. Feldman

Appl. Phys. Lett. 92, 102112 (2008)

https://doi.org/10.1063/1.2898502

Published: March 2008

View article titled, Ultrashallow defect states at Si O 2 ∕ 4 H – Si C interfaces

Journal Articles

Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO 2 / 4 H-SiC

X. D. Chen, S. Dhar, T. Isaacs-Smith, J. R. Williams, L. C. Feldman, P. M. Mooney

J. Appl. Phys. 103, 033701 (2008)

https://doi.org/10.1063/1.2837028

Published: February 2008

View article titled, Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO 2 / 4 H-SiC

Journal Articles

Pressure dependence of SiO 2 growth kinetics and electrical properties on SiC

E. A. Ray, John Rozen, Sarit Dhar, L. C. Feldman, J. R. Williams

J. Appl. Phys. 103, 023522 (2008)

https://doi.org/10.1063/1.2832408

Published: January 2008

View article titled, Pressure dependence of SiO 2 growth kinetics and electrical properties on SiC

Journal Articles

Suppression of interface state generation upon electron injection in nitrided oxides grown on 4 H - Si C

John Rozen, Sarit Dhar, S. T. Pantelides, L. C. Feldman, Sanwu Wang, J. R. Williams, V. V. Afanas’ev

Appl. Phys. Lett. 91, 153503 (2007)

https://doi.org/10.1063/1.2790374

Published: October 2007

View article titled, Suppression of interface state generation upon electron injection in nitrided oxides grown on 4 H - Si C

Journal Articles

Modulated optical transmission of subwavelength hole arrays in metal- V O 2 films

J. Y. Suh, E. U. Donev, R. Lopez, L. C. Feldman, R. F. Haglund, Jr.

Appl. Phys. Lett. 88, 133115 (2006)

https://doi.org/10.1063/1.2190463

Published: March 2006

View article titled, Modulated optical transmission of subwavelength hole arrays in metal- V O 2 films

Journal Articles

Interface trap passivation for Si O 2 ∕ ( 000 1 ¯ ) C-terminated 4H-SiC

S. Dhar, L. C. Feldman, S. Wang, T. Isaacs-Smith, J. R. Williams

J. Appl. Phys. 98, 014902 (2005)

https://doi.org/10.1063/1.1938270

Published: July 2005

View article titled, Interface trap passivation for Si O 2 ∕ ( 000 1 ¯ ) C-terminated 4H-SiC

NARROW

Topics

Effect of surface treatments on ALD Al₂O₃/4H-SiC metal–oxide–semiconductor field-effect transistors

MgB₂ Josephson junctions produced by focused helium ion beam irradiation

Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence

Concentration, chemical bonding, and etching behavior of P and N at the SiO₂/SiC(0001) interface

Effects of sodium ions on trapping and transport of electrons at the SiO₂/4H-SiC interface

Atomic state and characterization of nitrogen at the SiC/SiO₂ interface

Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy

Surface damage on diamond membranes fabricated by ion implantation and lift-off

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO₂/SiC interfaces

High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO 2 on SiC

Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

Erratum: “Pressure dependence of SiO 2 growth kinetics and electrical properties on SiC” [J. Appl. Phys. 103, 023522 (2008)]

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO 2 / SiC interface

Ultrashallow defect states at Si O 2 ∕ 4 H – Si C interfaces

Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO 2 / 4 H-SiC

Pressure dependence of SiO 2 growth kinetics and electrical properties on SiC

Suppression of interface state generation upon electron injection in nitrided oxides grown on 4 H - Si C

Modulated optical transmission of subwavelength hole arrays in metal- V O 2 films

Interface trap passivation for Si O 2 ∕ ( 000 1 ¯ ) C-terminated 4H-SiC

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