1-20 of 46
Kyeongjae Cho
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Si-doped HZO and ZrO2 for hysteresis free high-k dielectric

Editor’s Pick
Harshil Kashyap, Ping-Che Lee, Kisung Chae, Matthias Passlack, Ajay K. Yadav, Keith Wong, Srini Nemani, Ellie Yieh, Jeffrey Spiegelman, Kyeongjae Cho, Asif Islam Khan, Andrew C. Kummel
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 022401 (2025)
https://doi.org/10.1116/6.0003895
Published: January 2025
View articletitled, Si-doped HZO and ZrO2 for hysteresis free high-k dielectric
Open the PDF for Si-doped HZO and ZrO2 for hysteresis free high-k dielectric in another window
Journal Articles

First principles reaction processes of Co(CO)3NO as an atomic layer deposition precursor on SiO2 and Co surfaces

Editor’s Pick
Nickolas M. Ashburn, Xiuyao Lang, Youhwan Jo, Yeonghun Lee, Xiaolong Yao, Kyeongjae Cho
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 052401 (2024)
https://doi.org/10.1116/6.0003769
Published: July 2024
View articletitled, First principles reaction processes of Co(CO)3NO as an atomic layer deposition precursor on SiO2 and Co surfaces
Open the PDF for First principles reaction processes of Co(CO)3NO as an atomic layer deposition precursor on SiO2 and Co surfaces in another window
Journal Articles

Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors

Yaoqiao Hu, Kyeongjae Cho
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 015701 (2024)
https://doi.org/10.1063/5.0210247
Published: July 2024
View articletitled, Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors
Open the PDF for Universal strain engineering for enhancing the hole mobility and dopability in p-type semiconductors in another window
Journal Articles

Density functional theory study on reaction mechanisms of Co(tbu2DAD)2 for area selective-atomic layer deposition of Co films on metal surfaces

Editor’s Pick
Nickolas Ashburn, Xiuyao Lang, Sumeet Pandey, Steven Wolf, Steve Kramer, John Smythe, Gurtej Sandhu, Charles Winter, Andrew C. Kummel, Kyeongjae Cho
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052403 (2023)
https://doi.org/10.1116/6.0002840
Published: August 2023
View articletitled, Density functional theory study on reaction mechanisms of Co(tbu2DAD)2 for area selective-atomic layer deposition of Co films on metal surfaces
Open the PDF for Density functional theory study on reaction mechanisms of Co(tbu2DAD)2 for area selective-atomic layer deposition of Co films on metal surfaces in another window
Includes: Supplementary data
Journal Articles

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

J. Zach Lentz, J. C. Woicik, Matthew Bergschneider, Ryan Davis, Apurva Mehta, Kyeongjae Cho, Paul C. McIntyre
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 062103 (2023)
https://doi.org/10.1063/5.0136746
Published: February 2023
View articletitled, Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)
Open the PDF for Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS) in another window
Includes: Supplementary data
Journal Articles

Role of dose optimization in Ru atomic layer deposition for low resistivity films

Victor Wang, Michael Breeden, Nickolas Ashburn, Matthew Bergschneider, Jacob Spiegelman, Harsono Simka, Kyeongjae Cho, Andrew C. Kummel
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 012201 (2023)
https://doi.org/10.1116/6.0002153
Published: December 2022
View articletitled, Role of dose optimization in Ru atomic layer deposition for low resistivity films
Open the PDF for Role of dose optimization in Ru atomic layer deposition for low resistivity films in another window
Includes: Supplementary data
Journal Articles

A new route of synthesizing atomically thin 2D materials embedded in bulk oxides

Jeongwoon Hwang, Jongchan Kim, Yifan Nie, Byoung Hun Lee, Jinho Ahn, Jiyoung Kim, Myung Mo Sung, Kyeongjae Cho
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 035302 (2021)
https://doi.org/10.1063/5.0055054
Published: July 2021
View articletitled, A new route of synthesizing atomically thin 2D materials embedded in bulk oxides
Open the PDF for A new route of synthesizing atomically thin 2D materials embedded in bulk oxides in another window
Includes: Supplementary data
Journal Articles

Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films

Kisung Chae, Jeongwoon Hwang, Evgueni Chagarov, Andrew Kummel, Kyeongjae Cho
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 054101 (2020)
https://doi.org/10.1063/5.0011547
Published: August 2020
View articletitled, Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films
Open the PDF for Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films in another window
Includes: Supplementary data
Journal Articles

First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6

Yaoqiao Hu, Jeongwoon Hwang, Yeonghun Lee, Patrick Conlin, Darrell G. Schlom, Suman Datta, Kyeongjae Cho
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 185701 (2019)
https://doi.org/10.1063/1.5109265
Published: November 2019
View articletitled, First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6
Open the PDF for First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6 in another window
Journal Articles

Improved carrier doping strategy of monolayer MoS2 through two-dimensional solid electrolyte of YBr3

Editor’s Pick
Maokun Wu, Pan Liu, Baojuan Xin, Luyan Li, Hong Dong, Yahui Cheng, Weichao Wang, Feng Lu, Kyeongjae Cho, Wei-Hua Wang, Hui Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 171601 (2019)
https://doi.org/10.1063/1.5093712
Published: April 2019
View articletitled, Improved carrier doping strategy of monolayer MoS2 through two-dimensional solid electrolyte of YBr3
Open the PDF for Improved carrier doping strategy of monolayer MoS2 through two-dimensional solid electrolyte of YBr3 in another window
Includes: Supplementary data
Journal Articles

Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition

Jeongwoon Hwang, Young Jun Oh, Jiyoung Kim, Myung Mo Sung, Kyeongjae Cho
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 154301 (2018)
https://doi.org/10.1063/1.5024200
Published: April 2018
View articletitled, Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition
Open the PDF for Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition in another window
Includes: Supplementary data
Journal Articles

Electromechanical scale-bridging model for piezoelectric nanostructures

Jin-Myoung Lim, Kyeongjae Cho, Maenghyo Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 013104 (2017)
https://doi.org/10.1063/1.4973631
Published: January 2017
View articletitled, Electromechanical scale-bridging model for piezoelectric nanostructures
Open the PDF for Electromechanical scale-bridging model for piezoelectric nanostructures in another window
Journal Articles

Erratum: “Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors” [Appl. Phys. Lett. 103 , 053513 (2013)]

Cheng Gong, Hengji Zhang, Weihua Wang, Luigi Colombo, Robert M. Wallace, Kyeongjae Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 139904 (2015)
https://doi.org/10.1063/1.4932088
Published: October 2015
View articletitled, Erratum: “Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors” [Appl. Phys. Lett. 103 , 053513 (2013)]
Open the PDF for Erratum: “Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors” [Appl. Phys. Lett. 103 , 053513 (2013)] in another window
Journal Articles

Surface oxidation energetics and kinetics on MoS2 monolayer

Santosh KC, Roberto C. Longo, Robert M. Wallace, Kyeongjae Cho
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 135301 (2015)
https://doi.org/10.1063/1.4916536
Published: April 2015
View articletitled, Surface oxidation energetics and kinetics on MoS2 monolayer
Open the PDF for Surface oxidation energetics and kinetics on MoS2 monolayer in another window
Journal Articles

Modulation of contact resistance between metal and graphene by controlling the graphene edge, contact area, and point defects: An ab initio study

Bo Ma, Cheng Gong, Yanwei Wen, Rong Chen, Kyeongjae Cho, Bin Shan
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 183708 (2014)
https://doi.org/10.1063/1.4876738
Published: May 2014
View articletitled, Modulation of contact resistance between metal and graphene by controlling the graphene edge, contact area, and point defects: An ab initio study
Open the PDF for Modulation of contact resistance between metal and graphene by controlling the graphene edge, contact area, and point defects: An ab initio study in another window
Includes: Supplementary data
Journal Articles

MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

Angelica Azcatl, Stephen McDonnell, Santosh K. C., Xin Peng, Hong Dong, Xiaoye Qin, Rafik Addou, Greg I. Mordi, Ning Lu, Jiyoung Kim, Moon J. Kim, Kyeongjae Cho, Robert M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 111601 (2014)
https://doi.org/10.1063/1.4869149
Published: March 2014
View articletitled, MoS2 functionalization for ultra-thin atomic layer deposited dielectrics
Open the PDF for MoS2 functionalization for ultra-thin atomic layer deposited dielectrics in another window
Includes: Supplementary data
Journal Articles

Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2×1) surface

Roberto C. Longo, Stephen McDonnell, D. Dick, R. M. Wallace, Yves J. Chabal, James H. G. Owen, Josh B. Ballard, John N. Randall, Kyeongjae Cho
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 03D112 (2014)
https://doi.org/10.1116/1.4864619
Published: February 2014
View articletitled, Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2×1) surface
Open the PDF for Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2×1) surface in another window
Journal Articles

Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si(100): The role of liberated hydrogen

Joshua B. Ballard, James H. G. Owen, Justin D. Alexander, William R. Owen, Ehud Fuchs, John N. Randall, Roberto C. Longo, Kyeongjae Cho
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 021805 (2014)
https://doi.org/10.1116/1.4864302
Published: February 2014
View articletitled, Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si(100): The role of liberated hydrogen
Open the PDF for Spurious dangling bond formation during atomically precise hydrogen depassivation lithography on Si(100): The role of liberated hydrogen in another window
Journal Articles

Electronic properties of InP (001)/HfO2 (001) interface: Band offsets and oxygen dependence

Santosh KC, Hong Dong, Roberto C. Longo, Weichao Wang, Ka Xiong, Robert M. Wallace, Kyeongjae Cho
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 023703 (2014)
https://doi.org/10.1063/1.4861177
Published: January 2014
View articletitled, Electronic properties of InP (001)/HfO2 (001) interface: Band offsets and oxygen dependence
Open the PDF for Electronic properties of InP (001)/HfO2 (001) interface: Band offsets and oxygen dependence in another window
Journal Articles

Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

Cheng Gong, Hengji Zhang, Weihua Wang, Luigi Colombo, Robert M. Wallace, Kyeongjae Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 053513 (2013)
https://doi.org/10.1063/1.4817409
Published: August 2013
View articletitled, Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
Open the PDF for Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors in another window