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Journal Articles

Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template

Junwei Hu, Kun Xing, Zhihu Xia, Yimeng Sang, Xiaoping Yang, Tao Tao, Zhe Zhuang, Rong Zhang, Bin Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 111107 (2023)
https://doi.org/10.1063/5.0162548
Published: September 2023
View article titled, Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an <em>in situ</em> InGaN decomposition template
Open the PDF for Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an <em>in situ</em> InGaN decomposition template in another window
Journal Articles

Semi-polar (11–22) GaN epitaxial films with significantly reduced defect densities grown on m-plane sapphire using a sequence of two in situ SiNx interlayers

Kun Xing, Chiyao Tseng, Liancheng Wang, Pingfeng Chi, Jiangtao Wang, Posung Chen, Huaguo Liang
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 131105 (2019)
https://doi.org/10.1063/1.5085012
Published: April 2019
View article titled, Semi-polar (11–22) GaN epitaxial films with significantly reduced defect densities grown on m-plane sapphire using a sequence of two <em>in situ</em> SiN<sub>x</sub> interlayers
Open the PDF for Semi-polar (11–22) GaN epitaxial films with significantly reduced defect densities grown on m-plane sapphire using a sequence of two <em>in situ</em> SiN<sub>x</sub> interlayers in another window