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Krishna C. Saraswat
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Journal Articles

Carrier-selective interlayer materials for silicon solar cell contacts

Muyu Xue, Raisul Islam, Yusi Chen, Junyan Chen, Ching-Ying Lu, A. Mitchell Pleus, Christian Tae, Ke Xu, Yi Liu, Theodore I. Kamins, Krishna C. Saraswat, James S. Harris
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 143101 (2018)
https://doi.org/10.1063/1.5020056
Published: April 2018
View article titled, Carrier-selective interlayer materials for silicon solar cell contacts
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Journal Articles

Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors

Matthew Morea, Corinna E. Brendel, Kai Zang, Junkyo Suh, Colleen S. Fenrich, Yi-Chiau Huang, Hua Chung, Yijie Huo, Theodore I. Kamins, Krishna C. Saraswat, James S. Harris
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 091109 (2017)
https://doi.org/10.1063/1.4977878
Published: March 2017
View article titled, Passivation of multiple-quantum-well Ge<sub>0.97</sub>Sn<sub>0.03</sub>/Ge p-i-n photodetectors
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Includes: Supplementary data
Journal Articles

Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts

Raisul Islam, Gautam Shine, Krishna C. Saraswat
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 182103 (2014)
https://doi.org/10.1063/1.4901193
Published: November 2014
View article titled, Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts
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Journal Articles

Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment

Suyog Gupta, Robert Chen, James S. Harris, Krishna C. Saraswat
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 241601 (2013)
https://doi.org/10.1063/1.4850518
Published: December 2013
View article titled, Atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment
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Journal Articles

Achieving direct band gap in germanium through integration of Sn alloying and external strain

Suyog Gupta, Blanka Magyari-Köpe, Yoshio Nishi, Krishna C. Saraswat
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 073707 (2013)
https://doi.org/10.1063/1.4792649
Published: February 2013
View article titled, Achieving direct band gap in germanium through integration of Sn alloying and external strain
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Journal Articles

Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application

Woo-Shik Jung, Jin-Hong Park, Aneesh Nainani, Donguk Nam, Krishna C. Saraswat
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 072104 (2012)
https://doi.org/10.1063/1.4746389
Published: August 2012
View article titled, Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application
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Journal Articles

Enhancing hole mobility in III-V semiconductors

Aneesh Nainani, Brian R. Bennett, J. Brad Boos, Mario G. Ancona, Krishna C. Saraswat
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 103706 (2012)
https://doi.org/10.1063/1.4718381
Published: May 2012
View article titled, Enhancing hole mobility in III-V semiconductors
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Journal Articles

Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

Ze Yuan, Aneesh Nainani, Brian R. Bennett, J. Brad Boos, Mario G. Ancona, Krishna C. Saraswat
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 143503 (2012)
https://doi.org/10.1063/1.3699226
Published: April 2012
View article titled, Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors
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Journal Articles

Impact of fixed charge on metal-insulator-semiconductor barrier height reduction

Jenny Hu, Aneesh Nainani, Yun Sun, Krishna C. Saraswat, H.-S. Philip Wong
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 252104 (2011)
https://doi.org/10.1063/1.3669414
Published: December 2011
View article titled, Impact of fixed charge on metal-insulator-semiconductor barrier height reduction
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Journal Articles

Metal/III-V effective barrier height tuning using atomic layer deposition of high-κ/high-κ bilayer interfaces

Jenny Hu, Krishna C. Saraswat, H.-S. Philip Wong
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 092107 (2011)
https://doi.org/10.1063/1.3633118
Published: September 2011
View article titled, Metal/III-V effective barrier height tuning using atomic layer deposition of high-κ/high-κ bilayer interfaces
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Journal Articles

InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design

Aneesh Nainani, Ze Yuan, Tejas Krishnamohan, Brian R. Bennett, J. Brad Boos, Matthew Reason, Mario G. Ancona, Yoshio Nishi, Krishna C. Saraswat
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 014503 (2011)
https://doi.org/10.1063/1.3600220
Published: July 2011
View article titled, In<sub>x</sub>Ga<sub>1-x</sub>Sb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design
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Journal Articles

Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning

Aneesh Nainani, Yun Sun, Toshifumi Irisawa, Ze Yuan, Masaharu Kobayashi, Piero Pianetta, Brian. R. Bennett, J. Brad Boos, Krishna C. Saraswat
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 114908 (2011)
https://doi.org/10.1063/1.3590167
Published: June 2011
View article titled, Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning
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Journal Articles

Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO 2 interfacial layer with low tunneling resistance

Ze Yuan, Aneesh Nainani, Yun Sun, J.-Y. Jason Lin, Piero Pianetta, Krishna C. Saraswat
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 172106 (2011)
https://doi.org/10.1063/1.3584862
Published: April 2011
View article titled, Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO 2 interfacial layer with low tunneling resistance
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Journal Articles

Increase in current density for metal contacts to n-germanium by inserting TiO 2 interfacial layer to reduce Schottky barrier height

J.-Y. Jason Lin, Arunanshu M. Roy, Aneesh Nainani, Yun Sun, Krishna C. Saraswat
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 092113 (2011)
https://doi.org/10.1063/1.3562305
Published: March 2011
View article titled, Increase in current density for metal contacts to n-germanium by inserting TiO 2 interfacial layer to reduce Schottky barrier height
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Journal Articles

Experimental demonstration of In 0.53 Ga 0.47 As field effect transistors with scalable nonalloyed source/drain contacts

Jenny Hu, Krishna C. Saraswat, H.-S. Philip Wong
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 062107 (2011)
https://doi.org/10.1063/1.3553192
Published: February 2011
View article titled, Experimental demonstration of In 0.53 Ga 0.47 As field effect transistors with scalable nonalloyed source/drain contacts
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Journal Articles

Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Eun Ji Kim, Michael Shandalov, Krishna C. Saraswat, Paul C. McIntyre
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 032108 (2011)
https://doi.org/10.1063/1.3527977
Published: January 2011
View article titled, Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics
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Journal Articles

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Hyun-Yong Yu, Szu-lin Cheng, Jin-Hong Park, Ali K. Okyay, M. Cengiz Onbaşlı, Burcu Ercan, Yoshio Nishi, Krishna C. Saraswat
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 063503 (2010)
https://doi.org/10.1063/1.3478242
Published: August 2010
View article titled, High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing
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Journal Articles

Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments

Aneesh Nainani, Jung Yum, Joel Barnett, Richard Hill, Niti Goel, Jeff Huang, Prashant Majhi, Raj Jammy, Krishna C. Saraswat
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 242110 (2010)
https://doi.org/10.1063/1.3436561
Published: June 2010
View article titled, Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments
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Journal Articles

Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts

Jenny Hu, Krishna C. Saraswat, H.-S. Philip Wong
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 063712 (2010)
https://doi.org/10.1063/1.3327434
Published: March 2010
View article titled, Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts
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Journal Articles

Conductivity mismatch and voltage dependence of magnetoresistance in a semiconductor spin injection device

Arunanshu M. Roy, Dmitri E. Nikonov, Krishna C. Saraswat
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 064504 (2010)
https://doi.org/10.1063/1.3319570
Published: March 2010
View article titled, Conductivity mismatch and voltage dependence of magnetoresistance in a semiconductor spin injection device
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