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Journal Articles

Slowing DNA translocation through a solid-state nanopore by applying hydrophobic microchannel-guided walls

Jae-Hyun Kang, Kidan Lee, Hyun-Mi Kim, Ki-Bum Kim

J. Vac. Sci. Technol. A 38, 043401 (2020)

https://doi.org/10.1116/6.0000182

Published: May 2020

View article titled, Slowing DNA translocation through a solid-state nanopore by applying hydrophobic microchannel-guided walls

Includes: Supplementary data

Journal Articles

Direct formation of graphene on dielectric substrate: Controlling the location of graphene formation adopting carbon diffusion barrier

Ki-Ju Kim, Seong-Yong Cho, Hyun-Mi Kim, Ki-Bum Kim

J. Vac. Sci. Technol. B 36, 021802 (2018)

https://doi.org/10.1116/1.5016591

Published: February 2018

View article titled, Direct formation of graphene on dielectric substrate: Controlling the location of graphene formation adopting carbon diffusion barrier

Journal Articles

Nanopore formation in TiN membranes by the focused electron beam of a transmission electron microscope

Hyun-Mi Kim, Seong-Yong Cho, Ki-Bum Kim

J. Vac. Sci. Technol. B 33, 06F502 (2015)

https://doi.org/10.1116/1.4935504

Published: November 2015

View article titled, Nanopore formation in TiN membranes by the focused electron beam of a transmission electron microscope

Journal Articles

Investigation of analog memristive switching of iron oxide nanoparticle assembly between Pt electrodes

Jae-Deuk Kim, Yoon-Jae Baek, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, Hyun-Mi Kim, Ki-Bum Kim, Tae-Sik Yoon

J. Appl. Phys. 114, 224505 (2013)

https://doi.org/10.1063/1.4846759

Published: December 2013

View article titled, Investigation of analog memristive switching of iron oxide nanoparticle assembly between Pt electrodes

Journal Articles

Multimode threshold and bipolar resistive switching in bi-layered Pt-Fe₂O₃ core-shell and Fe₂O₃ nanoparticle assembly

Jin-Yong Lee, Yoon-Jae Baek, Quanli Hu, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, Hyun-Mi Kim, Ki-Bum Kim, Tae-Sik Yoon

Appl. Phys. Lett. 102, 122111 (2013)

https://doi.org/10.1063/1.4798534

Published: March 2013

View article titled, Multimode threshold and bipolar resistive switching in bi-layered Pt-Fe2O3 core-shell and Fe2O3 nanoparticle assembly

Journal Articles

Interface-controlled thermal transport properties in nano-clustered phase change materials

Dongbok Lee, Stephen Dongmin Kang, Hyun-Mi Kim, Dae-Hwan Kang, Ho-Ki Lyeo, Ki-Bum Kim

J. Appl. Phys. 111, 073528 (2012)

https://doi.org/10.1063/1.3703071

Published: April 2012

View article titled, Interface-controlled thermal transport properties in nano-clustered phase change materials

Journal Articles

Fabrication of ultra-high-density nanodot array patterns (∼3 Tbits/in.²) using electron-beam lithography

Min-Hyun Lee, Hyun-Mi Kim, Seong-Yong Cho, Kipil Lim, Soo-Yeon Park, Jae Jong Lee, Ki-Bum Kim

J. Vac. Sci. Technol. B 29, 061602 (2011)

https://doi.org/10.1116/1.3646469

Published: October 2011

View article titled, Fabrication of ultra-high-density nanodot array patterns (∼3 Tbits/in.2) using electron-beam lithography

Includes: Supplementary data

Journal Articles

Homogeneous dispersion of organic p -dopants in an organic semiconductor as an origin of high charge generation efficiency

Jae-Hyun Lee, Hyun-Mi Kim, Ki-Bum Kim, Ryota Kabe, Pavel Anzenbacher, Jr., Jang-Joo Kim

Appl. Phys. Lett. 98, 173303 (2011)

https://doi.org/10.1063/1.3569144

Published: April 2011

View article titled, Homogeneous dispersion of organic p -dopants in an organic semiconductor as an origin of high charge generation efficiency

Journal Articles

Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO 2 / Al 2 O 3 bilayered tunnel barrier

Do-Joong Lee, Sung-Soo Yim, Ki-Su Kim, Soo-Hyun Kim, Ki-Bum Kim

J. Appl. Phys. 107, 013707 (2010)

https://doi.org/10.1063/1.3275346

Published: January 2010

View article titled, Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO 2 / Al 2 O 3 bilayered tunnel barrier

Journal Articles

Understanding of hydrogen silsesquioxane electron resist for sub- 5 - nm -half-pitch lithography

Joel K. W. Yang, Bryan Cord, Huigao Duan, Karl K. Berggren, Joseph Klingfus, Sung-Wook Nam, Ki-Bum Kim, Michael J. Rooks

J. Vac. Sci. Technol. B 27, 2622–2627 (2009)

https://doi.org/10.1116/1.3253652

Published: December 2009

View article titled, Understanding of hydrogen silsesquioxane electron resist for sub- 5 - nm -half-pitch lithography

Journal Articles

Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer

Sung-Wook Nam, Michael J. Rooks, Joel K. W. Yang, Karl K. Berggren, Hyun-Mi Kim, Min-Hyun Lee, Ki-Bum Kim, Jae Hwan Sim, Do Yeung Yoon

J. Vac. Sci. Technol. B 27, 2635–2639 (2009)

https://doi.org/10.1116/1.3245991

Published: December 2009

View article titled, Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer

Journal Articles

Method of improving the quality of nanopatterning in atomic image projection electron-beam lithography

Hyun-Mi Kim, Min Hyun Lee, Hyo-Sung Lee, Jung-Sub Wi, Kipil Lim, Ki-Bum Kim

J. Vac. Sci. Technol. B 27, 2553–2557 (2009)

https://doi.org/10.1116/1.3250262

Published: December 2009

View article titled, Method of improving the quality of nanopatterning in atomic image projection electron-beam lithography

Journal Articles

Analysis of the electric field induced elemental separation of Ge 2 Sb 2 Te 5 by transmission electron microscopy

Dongmin Kang, Dongbok Lee, Hyun-Mi Kim, Sung-Wook Nam, Min-Ho Kwon, Ki-Bum Kim

Appl. Phys. Lett. 95, 011904 (2009)

https://doi.org/10.1063/1.3168517

Published: July 2009

View article titled, Analysis of the electric field induced elemental separation of Ge 2 Sb 2 Te 5 by transmission electron microscopy

Journal Articles

Low thermal conductivity in Ge 2 Sb 2 Te 5 – SiO x for phase change memory devices

Tae-Yon Lee (이태연), Kijoon H. P. Kim (김기준), Dong-Seok Suh (서동석), Cheolkyu Kim (김철규), Youn-Seon Kang (강윤선), David G. Cahill, Dongbok Lee (이동복), Min-Hyun Lee (이민현), Min-Ho Kwon (권민호), Ki-Bum Kim (김기범), Yoonho Khang (강윤호)

Appl. Phys. Lett. 94, 243103 (2009)

https://doi.org/10.1063/1.3155202

Published: June 2009

View article titled, Low thermal conductivity in Ge 2 Sb 2 Te 5 – SiO x for phase change memory devices

Journal Articles

Direct evidence of phase separation in Ge 2 Sb 2 Te 5 in phase change memory devices

Cheolkyu Kim (김철규), Dongmin Kang (강동민), Tae-Yon Lee (이태연), Kijoon H. P. Kim (김기준), Youn-Seon Kang (강윤선), Junho Lee (이준호), Sung-Wook Nam (남성욱), Ki-Bum Kim (김기범), Yoonho Khang (강윤호)

Appl. Phys. Lett. 94, 193504 (2009)

https://doi.org/10.1063/1.3127223

Published: May 2009

View article titled, Direct evidence of phase separation in Ge 2 Sb 2 Te 5 in phase change memory devices

Journal Articles

Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning

Hyo-Sung Lee, Jung-Sub Wi, Sung-Wook Nam, Hyun-Mi Kim, Ki-Bum Kim

J. Vac. Sci. Technol. B 27, 188–192 (2009)

https://doi.org/10.1116/1.3049482

Published: February 2009

View article titled, Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning

Journal Articles

Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition

Sung-Soo Yim, Do-Joong Lee, Ki-Su Kim, Soo-Hyun Kim, Tae-Sik Yoon, Ki-Bum Kim

J. Appl. Phys. 103, 113509 (2008)

https://doi.org/10.1063/1.2938052

Published: June 2008

View article titled, Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition

Journal Articles

Phase separation behavior of Ge 2 Sb 2 Te 5 line structure during electrical stress biasing

Sung-Wook Nam, Cheolkyu Kim, Min-Ho Kwon, Hyo-Sung Lee, Jung-Sub Wi, Dongbok Lee, Tae-Yon Lee, Yoonho Khang, Ki-Bum Kim

Appl. Phys. Lett. 92, 111913 (2008)

https://doi.org/10.1063/1.2899967

Published: March 2008

View article titled, Phase separation behavior of Ge 2 Sb 2 Te 5 line structure during electrical stress biasing

Journal Articles

Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO 2 ∕ Si substrates by high-resolution transmission electron microscopy

Tae-Sik Yoon, Hyun-Mi Kim, Ki-Bum Kim, Du Yeol Ryu, Thomas P. Russell, Zuoming Zhao, Jian Liu, Ya-Hong Xie

J. Appl. Phys. 102, 104306 (2007)

https://doi.org/10.1063/1.2812610

Published: November 2007

View article titled, Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO 2 ∕ Si substrates by high-resolution transmission electron microscopy

Journal Articles

Response to “Comment on ‘Investigation of the optical and electronic properties of Ge 2 Sb 2 Te 5 phase change material in its amorphous, cubic, and hexagonal phases’” [ J. Appl. Phys. 97 , 093509 ( 2005 ) ]

Bong-Sub Lee, John R. Abelson, Stephen G. Bishop, Dae-Hwan Kang, Byung-ki Cheong, Ki-Bum Kim

J. Appl. Phys. 101, 026112 (2007)

https://doi.org/10.1063/1.2426907

Published: January 2007

View article titled, Response to “Comment on ‘Investigation of the optical and electronic properties of Ge 2 Sb 2 Te 5 phase change material in its amorphous, cubic, and hexagonal phases’” [ J. Appl. Phys. 97 , 093509 ( 2005 ) ]

NARROW

Topics

Slowing DNA translocation through a solid-state nanopore by applying hydrophobic microchannel-guided walls

Direct formation of graphene on dielectric substrate: Controlling the location of graphene formation adopting carbon diffusion barrier

Nanopore formation in TiN membranes by the focused electron beam of a transmission electron microscope

Investigation of analog memristive switching of iron oxide nanoparticle assembly between Pt electrodes

Multimode threshold and bipolar resistive switching in bi-layered Pt-Fe₂O₃ core-shell and Fe₂O₃ nanoparticle assembly

Interface-controlled thermal transport properties in nano-clustered phase change materials

Fabrication of ultra-high-density nanodot array patterns (∼3 Tbits/in.²) using electron-beam lithography

Homogeneous dispersion of organic p -dopants in an organic semiconductor as an origin of high charge generation efficiency

Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO 2 / Al 2 O 3 bilayered tunnel barrier

Understanding of hydrogen silsesquioxane electron resist for sub- 5 - nm -half-pitch lithography

Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer

Method of improving the quality of nanopatterning in atomic image projection electron-beam lithography

Analysis of the electric field induced elemental separation of Ge 2 Sb 2 Te 5 by transmission electron microscopy

Low thermal conductivity in Ge 2 Sb 2 Te 5 – SiO x for phase change memory devices

Direct evidence of phase separation in Ge 2 Sb 2 Te 5 in phase change memory devices

Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning

Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition

Phase separation behavior of Ge 2 Sb 2 Te 5 line structure during electrical stress biasing

Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO 2 ∕ Si substrates by high-resolution transmission electron microscopy

Response to “Comment on ‘Investigation of the optical and electronic properties of Ge 2 Sb 2 Te 5 phase change material in its amorphous, cubic, and hexagonal phases’” [ J. Appl. Phys. 97 , 093509 ( 2005 ) ]

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