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Kentaro Kutsukake
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Journal Articles

3D CNN and grad-CAM based visualization for predicting generation of dislocation clusters in multicrystalline silicon

Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami
Journal: APL Machine Learning
APL Mach. Learn. 1, 036106 (2023)
https://doi.org/10.1063/5.0156044
Published: July 2023
View article titled, 3D CNN and grad-CAM based visualization for predicting generation of dislocation clusters in multicrystalline silicon
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Journal Articles

A machine learning-based prediction of crystal orientations for multicrystalline materials

Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami
Journal: APL Machine Learning
APL Mach. Learn. 1, 026113 (2023)
https://doi.org/10.1063/5.0138099
Published: May 2023
View article titled, A machine learning-based prediction of crystal orientations for multicrystalline materials
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Includes: Supplementary data
Journal Articles

Study on electrical activity of grain boundaries in silicon through systematic control of structural parameters and characterization using a pretrained machine learning model

Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Yutaka Ohno, Noritaka Usami
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 025102 (2022)
https://doi.org/10.1063/5.0086193
Published: July 2022
View article titled, Study on electrical activity of grain boundaries in silicon through systematic control of structural parameters and characterization using a pretrained machine learning model
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Includes: Supplementary data
Journal Articles

Direct prediction of electrical properties of grain boundaries from photoluminescence profiles using machine learning

Kentaro Kutsukake, Kazuki Mitamura, Noritaka Usami, Takuto Kojima
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 032105 (2021)
https://doi.org/10.1063/5.0049847
Published: July 2021
View article titled, Direct prediction of electrical properties of grain boundaries from photoluminescence profiles using machine learning
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Includes: Supplementary data
Journal Articles

Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation

Kazuki Mitamura, Kentaro Kutsukake, Takuto Kojima, Noritaka Usami
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 125103 (2020)
https://doi.org/10.1063/5.0017823
Published: September 2020
View article titled, Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation
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Journal Articles

Transmission behavior of dislocations against Σ3 twin boundaries in Si

Ichiro Yonenaga, Kentaro Kutsukake
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 075107 (2020)
https://doi.org/10.1063/1.5139972
Published: February 2020
View article titled, Transmission behavior of dislocations against Σ3 twin boundaries in Si
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Journal Articles

Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon

Yutaka Ohno, Kaihei Inoue, Kozo Fujiwara, Kentaro Kutsukake, Momoko Deura, Ichiro Yonenaga, Naoki Ebisawa, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, Hideto Yoshida, Seiji Takeda, Shingo Tanaka, Masanori Kohyama
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 062105 (2017)
https://doi.org/10.1063/1.4975814
Published: February 2017
View article titled, Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon
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Journal Articles

Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals

Yutaka Ohno, Kentaro Kutsukake, Momoko Deura, Ichiro Yonenaga, Yasuo Shimizu, Naoki Ebisawa, Koji Inoue, Yasuyoshi Nagai, Hideto Yoshida, Seiji Takeda
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 142105 (2016)
https://doi.org/10.1063/1.4964440
Published: October 2016
View article titled, Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals
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Journal Articles

Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

Ichiro Yonenaga, Yasushi Ohkubo, Momoko Deura, Kentaro Kutsukake, Yuki Tokumoto, Yutaka Ohno, Akihiko Yoshikawa, Xin Qiang Wang
Journal: AIP Advances
AIP Advances 5, 077131 (2015)
https://doi.org/10.1063/1.4926966
Published: July 2015
View article titled, Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides
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Journal Articles

Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

Yutaka Ohno, Kaihei Inoue, Kozo Fujiwara, Momoko Deura, Kentaro Kutsukake, Ichiro Yonenaga, Yasuo Shimizu, Koji Inoue, Naoki Ebisawa, Yasuyoshi Nagai
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 251603 (2015)
https://doi.org/10.1063/1.4921742
Published: June 2015
View article titled, Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals
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Journal Articles

Three-dimensional evaluation of gettering ability of Σ 3 { 111 } grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy

Yutaka Ohno, Kaihei Inoue, Yuki Tokumoto, Kentaro Kutsukake, Ichiro Yonenaga, Naoki Ebisawa, Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, Hideto Yoshida, Seiji Takeda
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 102102 (2013)
https://doi.org/10.1063/1.4820140
Published: September 2013
View article titled, Three-dimensional evaluation of gettering ability of Σ 3 { 111 } grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy
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Journal Articles

Erratum: “Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation” [J. Appl. Phys. 112, 093526 (2012)]

Yuki Tokumoto, Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 129902 (2012)
https://doi.org/10.1063/1.4771927
Published: December 2012
View article titled, Erratum: “Dislocation structure in AlN films induced by <em>in situ</em> transmission electron microscope nanoindentation” [J. Appl. Phys. 112, 093526 (2012)]
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Journal Articles

Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation

Yuki Tokumoto, Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 093526 (2012)
https://doi.org/10.1063/1.4764928
Published: November 2012
View article titled, Dislocation structure in AlN films induced by <em>in situ</em> transmission electron microscope nanoindentation
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Journal Articles

Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth

Kentaro Kutsukake, Takuro Abe, Noritaka Usami, Kozo Fujiwara, Ichiro Yonenaga, Kohei Morishita, Kazuo Nakajima
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 083530 (2011)
https://doi.org/10.1063/1.3652891
Published: October 2011
View article titled, Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth
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Journal Articles

Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells

Noritaka Usami, Isao Takahashi, Kentaro Kutsukake, Kozo Fujiwara, Kazuo Nakajima
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 083527 (2011)
https://doi.org/10.1063/1.3576108
Published: April 2011
View article titled, Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells
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Journal Articles

Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth

Noritaka Usami, Ryusuke Yokoyama, Isao Takahashi, Kentaro Kutsukake, Kozo Fujiwara, Kazuo Nakajima
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 013511 (2010)
https://doi.org/10.1063/1.3276219
Published: January 2010
View article titled, Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth
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Journal Articles

Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance

Kentaro Kutsukake, Noritaka Usami, Tsuyoshi Ohtaniuchi, Kozo Fujiwara, Kazuo Nakajima
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 044909 (2009)
https://doi.org/10.1063/1.3079504
Published: February 2009
View article titled, Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance
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Journal Articles

Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis

Noritaka Usami, Kentaro Kutsukake, Kozo Fujiwara, Kazuo Nakajima
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 103504 (2007)
https://doi.org/10.1063/1.2816207
Published: November 2007
View article titled, Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis
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Journal Articles

Influence of structural imperfection of Σ 5 grain boundaries in bulk multicrystalline Si on their electrical activities

Kentaro Kutsukake, Noritaka Usami, Kozo Fujiwara, Yoshitaro Nose, Kazuo Nakajima
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 063509 (2007)
https://doi.org/10.1063/1.2710348
Published: March 2007
View article titled, Influence of structural imperfection of Σ 5 grain boundaries in bulk multicrystalline Si on their electrical activities
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Journal Articles

Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer

Noritaka Usami, Kentaro Kutsukake, Kazuo Nakajima, Sevak Amtablian, Alain Fave, Mustapha Lemiti
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 031915 (2007)
https://doi.org/10.1063/1.2433025
Published: January 2007
View article titled, Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer
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