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Kenji Shiraishi
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Journal Articles

Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN

Open Access
Tomoki Nagase, Kenta Chokawa, Emi Kano, Keisuke Fukuta, Takuo Sasaki, Seiji Fujikawa, Masamitsu Takahashi, Kenji Shiraishi, Atsushi Oshiyama, Tsutomu Araki, Nobuyuki Ikarashi
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 055702 (2025)
https://doi.org/10.1063/5.0231584
Published: February 2025
View article titled, Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN
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Journal Articles

Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface

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Shuto Hattori, Atsushi Oshiyama, Kenji Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 161601 (2024)
https://doi.org/10.1063/5.0223569
Published: October 2024
View article titled, Passivation mechanisms of oxygen-vacancy-induced hole traps by Mg acceptor atoms at GaN/SiO2 interface
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Journal Articles

Theoretical study of the influence of GaOx interfacial layer on the GaN/SiO2 interface property

Open Access
Shuto Hattori, Atsushi Oshiyama, Kenji Shiraishi
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 175303 (2024)
https://doi.org/10.1063/5.0204285
Published: May 2024
View article titled, Theoretical study of the influence of GaOx interfacial layer on the GaN/SiO2 interface property
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Journal Articles

Atomic and electronic structures of interfaces between amorphous (Al2O3)1−x(SiO2)x and GaN polar surfaces revealed by first-principles simulated annealing technique

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Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 065301 (2023)
https://doi.org/10.1063/5.0132033
Published: February 2023
View article titled, Atomic and electronic structures of interfaces between amorphous (Al2O3)1−x(SiO2)x and GaN polar surfaces revealed by first-principles simulated annealing technique
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Journal Articles

Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process

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Yoshiki Ohata, Toru Nakanishi, Kenta Chokawa, Masaaki Araidai, Takuma Ishiguro, Hiroyuki Mitsuya, Hiroshi Toshiyoshi, Yasushi Shibata, Gen Hashiguchi, Kenji Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 243903 (2022)
https://doi.org/10.1063/5.0129247
Published: December 2022
View article titled, Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process
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Journal Articles

Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction

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Yutaro Ogawa, Masaaki Araidai, Tetsuo Endoh, Kenji Shiraishi
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 213904 (2022)
https://doi.org/10.1063/5.0126570
Published: December 2022
View article titled, Effect of interfacial nitrogen defects on tunnel magnetoresistance in an Fe/MgO/Fe magnetic tunnel junction
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Journal Articles

Geographical variability of summer- and winter-dominant onshore wind

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Zabir Mahmud, Kenji Shiraishi, Mahmoud Y. Abido, Dev Millstein, Pedro A. Sánchez-Pérez, Sarah Kurtz
Journal: Journal of Renewable and Sustainable Energy
J. Renewable Sustainable Energy 14, 023303 (2022)
https://doi.org/10.1063/5.0070430
Published: March 2022
View article titled, Geographical variability of summer- and winter-dominant onshore wind
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Includes: Supplementary data
Journal Articles

Defect-free interface between amorphous (Al2O3)1−x(SiO2)x and GaN(0001) revealed by first-principles simulated annealing technique

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Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 011602 (2021)
https://doi.org/10.1063/5.0047088
Published: July 2021
View article titled, Defect-free interface between amorphous (Al2O3)1−x(SiO2)x and GaN(0001) revealed by first-principles simulated annealing technique
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Includes: Supplementary data
Journal Articles

Negative-charge-storing mechanism of potassium-ion SiO2-based electrets for vibration-powered generators

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Toru Nakanishi, Takeshi Miyajima, Kenta Chokawa, Masaaki Araidai, Hiroshi Toshiyoshi, Tatsuhiko Sugiyama, Gen Hashiguchi, Kenji Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 193902 (2020)
https://doi.org/10.1063/5.0029012
Published: November 2020
View article titled, Negative-charge-storing mechanism of potassium-ion SiO2-based electrets for vibration-powered generators
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Journal Articles

Hydrogen desorption from silicane and germanane crystals: Toward creation of free-standing monolayer silicene and germanene

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Masaaki Araidai, Mai Itoh, Masashi Kurosawa, Akio Ohta, Kenji Shiraishi
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 125301 (2020)
https://doi.org/10.1063/5.0018855
Published: September 2020
View article titled, Hydrogen desorption from silicane and germanane crystals: Toward creation of free-standing monolayer silicene and germanene
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Journal Articles

Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SiC

Open Access
Kenta Chokawa, Masaaki Araidai, Kenji Shiraishi
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 135701 (2018)
https://doi.org/10.1063/1.5041794
Published: October 2018
View article titled, Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SiC
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Journal Articles

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1 ¯ ) metalorganic vapor phase epitaxy

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Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 141602 (2017)
https://doi.org/10.1063/1.4991608
Published: October 2017
View article titled, DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1 ¯ ) metalorganic vapor phase epitaxy
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Journal Articles

Physical origins of ON-OFF switching in ReRAM via VO based conducting channels

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Katsumasa Kamiya, Moon Young Yang, Seong-Geon Park, Blanka Magyari-Köpe, Yoshio Nishi, Masaaki Niwa, Kenji Shiraishi
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1566, 11–12 (2013)
https://doi.org/10.1063/1.4848260
Published: December 2013
View article titled, Physical origins of ON-OFF switching in ReRAM via VO based conducting channels
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Journal Articles

Interstitial oxygen induced Fermi level pinning in the Al2O3-based high-k MISFET with heavy-doped n-type poly-Si gates

Open Access
Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi
Journal: AIP Advances
AIP Advances 3, 102113 (2013)
https://doi.org/10.1063/1.4825071
Published: October 2013
View article titled, Interstitial oxygen induced Fermi level pinning in the Al2O3-based high-k MISFET with heavy-doped n-type poly-Si gates
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Journal Articles

Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories

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Moon Young Yang, Katsumasa Kamiya, Blanka Magyari-Köpe, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 093504 (2013)
https://doi.org/10.1063/1.4819772
Published: August 2013
View article titled, Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories
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Journal Articles

Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon

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Moon Young Yang, Katsumasa Kamiya, Takashi Yamauchi, Takashi Nakayama, Kenji Shiraishi
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 063701 (2013)
https://doi.org/10.1063/1.4817432
Published: August 2013
View article titled, Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon
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Journal Articles

Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide

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Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato, Katsumasa Kamiya, Kenji Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 212110 (2012)
https://doi.org/10.1063/1.4722782
Published: May 2012
View article titled, Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide
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Journal Articles

Theoretical study of Si-based ionic switch

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Takashi Yamauchi, Moon Young Yang, Katsumasa Kamiya, Kenji Shiraishi, Takashi Nakayama
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 203506 (2012)
https://doi.org/10.1063/1.4718758
Published: May 2012
View article titled, Theoretical study of Si-based ionic switch
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Journal Articles

Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material

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Naoto Umezawa, Kenji Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 092904 (2012)
https://doi.org/10.1063/1.3689968
Published: February 2012
View article titled, Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material
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Includes: Supplementary data
Journal Articles

ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels

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Katsumasa Kamiya, Moon Young Yang, Seong-Geon Park, Blanka Magyari-Köpe, Yoshio Nishi, Masaaki Niwa, Kenji Shiraishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 073502 (2012)
https://doi.org/10.1063/1.3685222
Published: February 2012
View article titled, ON-OFF switching mechanism of resistive–random–access–memories based on the formation and disruption of oxygen vacancy conducting channels
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