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Journal Articles

High-mobility wide bandgap amorphous gallium oxide thin-film transistors for NMOS inverters

Yong Zhang, Chi-Hsin Huang, Kenji Nomura

Appl. Phys. Rev. 11, 011418 (2024)

https://doi.org/10.1063/5.0159529

Published: March 2024

View article titled, High-mobility wide bandgap amorphous gallium oxide thin-film transistors for NMOS inverters

Includes: Supplementary data

Journal Articles

Dual-gated ambipolar oxide synaptic transistor for multistate excitatory and inhibitory responses

Yong Zhang, Chi-Hsin Huang, Kenji Nomura

Appl. Phys. Lett. 121, 262105 (2022)

https://doi.org/10.1063/5.0123309

Published: December 2022

View article titled, Dual-gated ambipolar oxide synaptic transistor for multistate excitatory and inhibitory responses

Includes: Supplementary data

Journal Articles

Ferroelectric capacitor with an asymmetric double-layer PLZT structure for FRAM

Wensheng Wang, Ko Nakamura, Takashi Eshita, Kenji Nomura, Kazuaki Takai, Hideshi Yamaguchi, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito, Manabu Kojima

Appl. Phys. Lett. 120, 102901 (2022)

https://doi.org/10.1063/5.0083645

Published: March 2022

View article titled, Ferroelectric capacitor with an asymmetric double-layer PLZT structure for FRAM

Journal Articles

Resistive switching memory effects in p-type hydrogen-treated CuO nanowire

Chi-Hsin Huang, Yalun Tang, Kosuke Matsuzaki, Kenji Nomura

Appl. Phys. Lett. 117, 043502 (2020)

https://doi.org/10.1063/5.0010839

Published: July 2020

View article titled, Resistive switching memory effects in p-type hydrogen-treated CuO nanowire

Includes: Supplementary data

Journal Articles

Threshold switching of non-stoichiometric CuO nanowire for selector application

Chi-Hsin Huang, Kosuke Matsuzaki, Kenji Nomura

Appl. Phys. Lett. 116, 023503 (2020)

https://doi.org/10.1063/1.5131733

Published: January 2020

View article titled, Threshold switching of non-stoichiometric CuO nanowire for selector application

Journal Articles

Reconstruction of IrO₂/(Pb, La)(Zr, Ti)O₃ (PLZT) interface by optimization of postdeposition annealing and sputtering conditions

Kenji Nomura, Wensheng Wang, Ko Nakamura, Takashi Eshita, Kazuaki Takai, Soichiro Ozawa, Hideshi Yamaguchi, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito, Yuji Kataoka, Manabu Kojima

J. Appl. Phys. 126, 074105 (2019)

https://doi.org/10.1063/1.5091501

Published: August 2019

View article titled, Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions

Journal Articles

Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology

Kazuo Yamada, Kenji Nomura, Katsumi Abe, Satoshi Takeda, Hideo Hosono

Appl. Phys. Lett. 105, 133503 (2014)

https://doi.org/10.1063/1.4896948

Published: September 2014

View article titled, Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology

Journal Articles

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Yuichiro Hanyu, Kay Domen, Kenji Nomura, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

Appl. Phys. Lett. 103, 202114 (2013)

https://doi.org/10.1063/1.4832076

Published: November 2013

View article titled, Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Journal Articles

Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

Ken Watanabe, Dong-Hee Lee, Isao Sakaguchi, Kenji Nomura, Toshio Kamiya, Hajime Haneda, Hideo Hosono, Naoki Ohashi

Appl. Phys. Lett. 103, 201904 (2013)

https://doi.org/10.1063/1.4829996

Published: November 2013

View article titled, Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

Includes: Supplementary data

Journal Articles

Band alignment of InGaZnO₄/Si interface by hard x-ray photoelectron spectroscopy

Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Eiji Ikenaga, Takeharu Sugiyama, Keisuke Kobayashi, Hideo Hosono

J. Appl. Phys. 112, 033713 (2012)

https://doi.org/10.1063/1.4744983

Published: August 2012

View article titled, Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy

Journal Articles

Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O

Keisuke Ide, Kenji Nomura, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

J. Appl. Phys. 111, 073513 (2012)

https://doi.org/10.1063/1.3699372

Published: April 2012

View article titled, Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O

Journal Articles

Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Mutsumi Kimura, Toshio Kamiya, Hideo Hosono

Appl. Phys. Lett. 99, 093507 (2011)

https://doi.org/10.1063/1.3633100

Published: September 2011

View article titled, Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

Includes: Supplementary data

Journal Articles

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

Kenji Nomura, Toshio Kamiya, Hideo Hosono

Appl. Phys. Lett. 99, 053505 (2011)

https://doi.org/10.1063/1.3622121

Published: August 2011

View article titled, Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

Includes: Supplementary data

Journal Articles

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

Kenji Nomura, Toshio Kamiya, Eiji Ikenaga, Hiroshi Yanagi, Keisuke Kobayashi, Hideo Hosono

J. Appl. Phys. 109, 073726 (2011)

https://doi.org/10.1063/1.3560769

Published: April 2011

View article titled, Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

Journal Articles

Sputtering formation of p -type SnO thin-film transistors on glass toward oxide complimentary circuits

Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Appl. Phys. Lett. 97, 072111 (2010)

https://doi.org/10.1063/1.3478213

Published: August 2010

View article titled, Sputtering formation of p -type SnO thin-film transistors on glass toward oxide complimentary circuits

Includes: Supplementary data

Journal Articles

Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n -type a-In–Ga–Zn–O and p -type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

Kenji Nomura, Takashi Aoki, Kiyoshi Nakamura, Toshio Kamiya, Takashi Nakanishi, Takayuki Hasegawa, Mutsumi Kimura, Takeo Kawase, Masahiro Hirano, Hideo Hosono

Appl. Phys. Lett. 96, 263509 (2010)

https://doi.org/10.1063/1.3458799

Published: June 2010

View article titled, Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n -type a-In–Ga–Zn–O and p -type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

Journal Articles

Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique

Mutsumi Kimura, Toshio Kamiya, Takashi Nakanishi, Kenji Nomura, Hideo Hosono

Appl. Phys. Lett. 96, 262105 (2010)

https://doi.org/10.1063/1.3455072

Published: June 2010

View article titled, Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique

Journal Articles

Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors

Toshio Kamiya, Kenji Nomura, Hideo Hosono

Appl. Phys. Lett. 96, 122103 (2010)

https://doi.org/10.1063/1.3364131

Published: March 2010

View article titled, Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors

Includes: Supplementary data

Journal Articles

Magnetization profile of Ir in a MnIr/CoFe exchange bias system evaluated by hard x-ray resonant magnetic reflectivity

Shuuichi Doi, Kenji Nomura, Naoki Awaji, Nobuyoshi Hosoito, Ryuichiro Yamagishi, Motohiro Suzuki

J. Appl. Phys. 106, 123919 (2009)

https://doi.org/10.1063/1.3273313

Published: December 2009

View article titled, Magnetization profile of Ir in a MnIr/CoFe exchange bias system evaluated by hard x-ray resonant magnetic reflectivity

Journal Articles

Field-modulated thermopower in SrTiO 3 -based field-effect transistors with amorphous 12 CaO ⋅ 7 Al 2 O 3 glass gate insulator

Hiromichi Ohta, Yumi Masuoka, Ryoji Asahi, Takeharu Kato, Yuichi Ikuhara, Kenji Nomura, Hideo Hosono

Appl. Phys. Lett. 95, 113505 (2009)

https://doi.org/10.1063/1.3231873

Published: September 2009

View article titled, Field-modulated thermopower in SrTiO 3 -based field-effect transistors with amorphous 12 CaO ⋅ 7 Al 2 O 3 glass gate insulator

NARROW

Topics

High-mobility wide bandgap amorphous gallium oxide thin-film transistors for NMOS inverters

Dual-gated ambipolar oxide synaptic transistor for multistate excitatory and inhibitory responses

Ferroelectric capacitor with an asymmetric double-layer PLZT structure for FRAM

Resistive switching memory effects in p-type hydrogen-treated CuO nanowire

Threshold switching of non-stoichiometric CuO nanowire for selector application

Reconstruction of IrO₂/(Pb, La)(Zr, Ti)O₃ (PLZT) interface by optimization of postdeposition annealing and sputtering conditions

Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors

Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

Band alignment of InGaZnO₄/Si interface by hard x-ray photoelectron spectroscopy

Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O

Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

Sputtering formation of p -type SnO thin-film transistors on glass toward oxide complimentary circuits

Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n -type a-In–Ga–Zn–O and p -type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique

Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors

Magnetization profile of Ir in a MnIr/CoFe exchange bias system evaluated by hard x-ray resonant magnetic reflectivity

Field-modulated thermopower in SrTiO 3 -based field-effect transistors with amorphous 12 CaO ⋅ 7 Al 2 O 3 glass gate insulator

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