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Journal Articles

Origin of residual strain in heteroepitaxial films

Eveline Postelnicu, Rui-Tao Wen, Danhao Ma, Baoming Wang, Kazumi Wada, Jurgen Michel, Lionel C. Kimerling

Appl. Phys. Lett. 123, 102103 (2023)

https://doi.org/10.1063/5.0153231

Published: September 2023

View article titled, Origin of residual strain in heteroepitaxial films

Journal Articles

Point defect–dislocation interactions in BEOL-compatible Ge-on-Si epitaxy

Eveline Postelnicu, Rui-Tao Wen, Danhao Ma, Baoming Wang, Kazumi Wada, Jurgen Michel, Lionel C. Kimerling

Appl. Phys. Lett. 123, 031103 (2023)

https://doi.org/10.1063/5.0153230

Published: July 2023

View article titled, Point defect–dislocation interactions in BEOL-compatible Ge-on-Si epitaxy

Journal Articles

Coalescence induced dislocation reduction in selectively grown lattice-mismatched heteroepitaxy: Theoretical prediction and experimental verification

Motoki Yako, Yasuhiko Ishikawa, Kazumi Wada

J. Appl. Phys. 123, 185304 (2018)

https://doi.org/10.1063/1.5011421

Published: May 2018

View article titled, Coalescence induced dislocation reduction in selectively grown lattice-mismatched heteroepitaxy: Theoretical prediction and experimental verification

Journal Articles

C-band electromodulation in silicon–germanium ring and linear devices

Peng Huei Lim, Jingnan Cai, Yasuhiko Ishikawa, Kazumi Wada

Appl. Phys. Lett. 97, 131115 (2010)

https://doi.org/10.1063/1.3496469

Published: October 2010

View article titled, C-band electromodulation in silicon–germanium ring and linear devices

Journal Articles

Enhanced photoluminescence from germanium-based ring resonators

Peng Huei Lim, Yosuke Kobayashi, Shinya Takita, Yasuhiko Ishikawa, Kazumi Wada

Appl. Phys. Lett. 93, 041103 (2008)

https://doi.org/10.1063/1.2950087

Published: July 2008

View article titled, Enhanced photoluminescence from germanium-based ring resonators

Journal Articles

Luminescence enhancement by Si ring resonator structures on silicon on insulator

Shiyun Lin, Yosuke Kobayashi, Yasuhiko Ishikawa, Kazumi Wada

Appl. Phys. Lett. 92, 021113 (2008)

https://doi.org/10.1063/1.2835051

Published: January 2008

View article titled, Luminescence enhancement by Si ring resonator structures on silicon on insulator

Journal Articles

Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates

Douglas D. Cannon, Jifeng Liu, David T. Danielson, Samerkhae Jongthammanurak, Uchechukwu U. Enuha, Kazumi Wada, Jurgen Michel, Lionel C. Kimerling

Appl. Phys. Lett. 91, 252111 (2007)

https://doi.org/10.1063/1.2825410

Published: December 2007

View article titled, Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates

Journal Articles

Theoretical study of nitrogen-doping effects on void formation processes in silicon crystal growth

Hiroyuki Kageshima, Akihito Taguchi, Kazumi Wada

J. Appl. Phys. 100, 113513 (2006)

https://doi.org/10.1063/1.2375018

Published: December 2006

View article titled, Theoretical study of nitrogen-doping effects on void formation processes in silicon crystal growth

Journal Articles

Large electro-optic effect in tensile strained Ge-on-Si films

Samerkhae Jongthammanurak, Jifeng Liu, Kazumi Wada, Douglas D. Cannon, David T. Danielson, Dong Pan, Lionel C. Kimerling, Jurgen Michel

Appl. Phys. Lett. 89, 161115 (2006)

https://doi.org/10.1063/1.2363948

Published: October 2006

View article titled, Large electro-optic effect in tensile strained Ge-on-Si films

Journal Articles

High-performance, tensile-strained Ge p - i - n photodetectors on a Si platform

Jifeng Liu, Jurgen Michel, Wojciech Giziewicz, Dong Pan, Kazumi Wada, Douglas D. Cannon, Samerkhae Jongthammanurak, David T. Danielson, Lionel C. Kimerling, Jian Chen, F. Ömer Ilday, Franz X. Kärtner, John Yasaitis

Appl. Phys. Lett. 87, 103501 (2005)

https://doi.org/10.1063/1.2037200

Published: August 2005

View article titled, High-performance, tensile-strained Ge p - i - n photodetectors on a Si platform

Journal Articles

Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate

Yasuhiko Ishikawa, Kazumi Wada, Jifeng Liu, Douglas D. Cannon, Hsin-Chiao Luan, Jurgen Michel, Lionel C. Kimerling

J. Appl. Phys. 98, 013501 (2005)

https://doi.org/10.1063/1.1943507

Published: July 2005

View article titled, Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate

Journal Articles

Tensile strained Ge p - i - n photodetectors on Si platform for C and L band telecommunications

Jifeng Liu, Douglas D. Cannon, Kazumi Wada, Yasuhiko Ishikawa, Samerkhae Jongthammanurak, David T. Danielson, Jurgen Michel, Lionel C. Kimerling

Appl. Phys. Lett. 87, 011110 (2005)

https://doi.org/10.1063/1.1993749

Published: July 2005

View article titled, Tensile strained Ge p - i - n photodetectors on Si platform for C and L band telecommunications

Journal Articles

Defect kinetics of O‐V‐N complexes in Si ingot growth based on first‐principles calculations and thermodynamics

Hiroyuki Kageshima, Akihito Taguchi, Kazumi Wada

AIP Conf. Proc. 772, 77–78 (2005)

https://doi.org/10.1063/1.1994002

Published: June 2005

View article titled, Defect kinetics of O‐V‐N complexes in Si ingot growth based on first‐principles calculations and thermodynamics

Journal Articles

Optical characteristics of one-dimensional Si ∕ Si O 2 photonic crystals for thermophotovoltaic applications

Francis O’Sullivan, Ivan Celanovic, Natalija Jovanovic, John Kassakian, Shoji Akiyama, Kazumi Wada

J. Appl. Phys. 97, 033529 (2005)

https://doi.org/10.1063/1.1849437

Published: January 2005

View article titled, Optical characteristics of one-dimensional Si ∕ Si O 2 photonic crystals for thermophotovoltaic applications

Journal Articles

Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications

Douglas D. Cannon, Jifeng Liu, Yasuhiko Ishikawa, Kazumi Wada, David T. Danielson, Samerkhae Jongthammanurak, Jurgen Michel, Lionel C. Kimerling

Appl. Phys. Lett. 84, 906–908 (2004)

https://doi.org/10.1063/1.1645677

Published: February 2004

View article titled, Tensile strained epitaxial Ge films on Si(100) substrates with potential application in <em>L</em>-band telecommunications

Journal Articles

Silicidation-induced band gap shrinkage in Ge epitaxial films on Si

Jifeng Liu, Douglas D. Cannon, Kazumi Wada, Yasuhiko Ishikawa, Samerkhae Jongthammanurak, David T. Danielson, Jurgen Michel, Lionel C. Kimerling

Appl. Phys. Lett. 84, 660–662 (2004)

https://doi.org/10.1063/1.1644618

Published: February 2004

View article titled, Silicidation-induced band gap shrinkage in Ge epitaxial films on Si

Journal Articles

Strain-induced band gap shrinkage in Ge grown on Si substrate

Yasuhiko Ishikawa, Kazumi Wada, Douglas D. Cannon, Jifeng Liu, Hsin-Chiao Luan, Lionel C. Kimerling

Appl. Phys. Lett. 82, 2044–2046 (2003)

https://doi.org/10.1063/1.1564868

Published: March 2003

View article titled, Strain-induced band gap shrinkage in Ge grown on Si substrate

Journal Articles

Tunable multichannel optical filter based on silicon photonic band gap materials actuation

Yasha Yi, Peter Bermel, Kazumi Wada, Xiaoman Duan, J. D. Joannopoulos, L. C. Kimerling

Appl. Phys. Lett. 81, 4112–4114 (2002)

https://doi.org/10.1063/1.1525072

Published: November 2002

View article titled, Tunable multichannel optical filter based on silicon photonic band gap materials actuation

Journal Articles

Correlation between photoreflectance signal intensity and current gain of InP/InGaAs heterojunction bipolar transistor structures

Hiroki Sugiyama, Noriyuki Watanabe, Kazuo Watanabe, Takashi Kobayashi, Kazumi Wada

J. Appl. Phys. 88, 1600–1605 (2000)

https://doi.org/10.1063/1.373860

Published: August 2000

View article titled, Correlation between photoreflectance signal intensity and current gain of InP/InGaAs heterojunction bipolar transistor structures

Journal Articles

Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si

Hiroyuki Kageshima, Akihito Taguchi, Kazumi Wada

Appl. Phys. Lett. 76, 3718–3720 (2000)

https://doi.org/10.1063/1.126760

Published: June 2000

View article titled, Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si

NARROW

Topics

Origin of residual strain in heteroepitaxial films

Point defect–dislocation interactions in BEOL-compatible Ge-on-Si epitaxy

Coalescence induced dislocation reduction in selectively grown lattice-mismatched heteroepitaxy: Theoretical prediction and experimental verification

C-band electromodulation in silicon–germanium ring and linear devices

Enhanced photoluminescence from germanium-based ring resonators

Luminescence enhancement by Si ring resonator structures on silicon on insulator

Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates

Theoretical study of nitrogen-doping effects on void formation processes in silicon crystal growth

Large electro-optic effect in tensile strained Ge-on-Si films

High-performance, tensile-strained Ge p - i - n photodetectors on a Si platform

Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate

Tensile strained Ge p - i - n photodetectors on Si platform for C and L band telecommunications

Defect kinetics of O‐V‐N complexes in Si ingot growth based on first‐principles calculations and thermodynamics

Optical characteristics of one-dimensional Si ∕ Si O 2 photonic crystals for thermophotovoltaic applications

Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications

Silicidation-induced band gap shrinkage in Ge epitaxial films on Si

Strain-induced band gap shrinkage in Ge grown on Si substrate

Tunable multichannel optical filter based on silicon photonic band gap materials actuation

Correlation between photoreflectance signal intensity and current gain of InP/InGaAs heterojunction bipolar transistor structures

Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si

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