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Journal Articles

Near-infrared-light-induced decomposition of Rhodamine B triggered by localized surface plasmon at gold square dimers with well-defined separation distance

Satoshi Kaneko, Shuhei Watanabe, Shinya Kasai, Tomoaki Nishino, Kazuhito Tsukagoshi, Manabu Kiguchi

AIP Advances 9, 035153 (2019)

https://doi.org/10.1063/1.5093763

Published: March 2019

View articletitled, Near-infrared-light-induced decomposition of Rhodamine B triggered by localized surface plasmon at gold square dimers with well-defined separation distance

Includes: Supplementary data

Journal Articles

Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors

Kazunori Kurishima, Toshihide Nabatame, Nobuhiko Mitoma, Takio Kizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura

J. Vac. Sci. Technol. B 36, 061206 (2018)

https://doi.org/10.1116/1.5039665

Published: October 2018

View articletitled, Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors

Journal Articles

Pronounced photogating effect in atomically thin WSe₂ with a self-limiting surface oxide layer

Mahito Yamamoto, Keiji Ueno, Kazuhito Tsukagoshi

Appl. Phys. Lett. 112, 181902 (2018)

https://doi.org/10.1063/1.5030525

Published: May 2018

View articletitled, Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer

Includes: Supplementary data

Journal Articles

Carrier polarity engineering in carbon nanotube field-effect transistors by induced charges in polymer insulator

Shinya Aikawa, Sungjin Kim, Theerapol Thurakitseree, Erik Einarsson, Taiki Inoue, Shohei Chiashi, Kazuhito Tsukagoshi, Shigeo Maruyama

Appl. Phys. Lett. 112, 013501 (2018)

https://doi.org/10.1063/1.4994114

Published: January 2018

View articletitled, Carrier polarity engineering in carbon nanotube field-effect transistors by induced charges in polymer insulator

Includes: Supplementary data

Journal Articles

Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

Nobuhiko Mitoma, Bo Da, Hideki Yoshikawa, Toshihide Nabatame, Makoto Takahashi, Kazuhiro Ito, Takio Kizu, Akihiko Fujiwara, Kazuhito Tsukagoshi

Appl. Phys. Lett. 109, 221903 (2016)

https://doi.org/10.1063/1.4968810

Published: November 2016

View articletitled, Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

Journal Articles

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

Takio Kizu, Shinya Aikawa, Toshihide Nabatame, Akihiko Fujiwara, Kazuhiro Ito, Makoto Takahashi, Kazuhito Tsukagoshi

J. Appl. Phys. 120, 045702 (2016)

https://doi.org/10.1063/1.4959822

Published: July 2016

View articletitled, Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

Journal Articles

Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Shunpei Takeshita, Sadashige Matsuo, Takahiro Tanaka, Shu Nakaharai, Kazuhito Tsukagoshi, Takahiro Moriyama, Teruo Ono, Tomonori Arakawa, Kensuke Kobayashi

Appl. Phys. Lett. 108, 103106 (2016)

https://doi.org/10.1063/1.4943642

Published: March 2016

View articletitled, Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Journal Articles

Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

Takio Kizu, Nobuhiko Mitoma, Miki Miyanaga, Hideaki Awata, Toshihide Nabatame, Kazuhito Tsukagoshi

J. Appl. Phys. 118, 125702 (2015)

https://doi.org/10.1063/1.4931422

Published: September 2015

View articletitled, Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

Journal Articles

Influence of Al₂O₃ layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors

Kazunori Kurishima, Toshihide Nabatame, Maki Shimizu, Nobuhiko Mitoma, Takio Kizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura

J. Vac. Sci. Technol. A 33, 061506 (2015)

https://doi.org/10.1116/1.4928763

Published: August 2015

View articletitled, Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors

Journal Articles

Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Huabin Sun, Yao Yin, Qijing Wang, Qian Jun, Yu Wang, Kazuhito Tsukagoshi, Xizhang Wang, Zheng Hu, Lijia Pan, Youdou Zheng, Yi Shi, Yun Li

Appl. Phys. Lett. 107, 053304 (2015)

https://doi.org/10.1063/1.4928534

Published: August 2015

View articletitled, Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Journal Articles

Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

Shinya Aikawa, Nobuhiko Mitoma, Takio Kizu, Toshihide Nabatame, Kazuhito Tsukagoshi

Appl. Phys. Lett. 106, 192103 (2015)

https://doi.org/10.1063/1.4921054

Published: May 2015

View articletitled, Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

Journal Articles

Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

Nobuhiko Mitoma, Shinya Aikawa, Wei Ou-Yang, Xu Gao, Takio Kizu, Meng-Fang Lin, Akihiko Fujiwara, Toshihide Nabatame, Kazuhito Tsukagoshi

Appl. Phys. Lett. 106, 042106 (2015)

https://doi.org/10.1063/1.4907285

Published: January 2015

View articletitled, Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

Journal Articles

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

Meng-Fang Lin, Xu Gao, Nobuhiko Mitoma, Takio Kizu, Wei Ou-Yang, Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi

AIP Advances 5, 017116 (2015)

https://doi.org/10.1063/1.4905903

Published: January 2015

View articletitled, Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

Includes: Supplementary data

Journal Articles

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

Wei Ou-Yang, Nobuhiko Mitoma, Takio Kizu, Xu Gao, Meng-Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi

Appl. Phys. Lett. 105, 163503 (2014)

https://doi.org/10.1063/1.4898815

Published: October 2014

View articletitled, Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

Includes: Supplementary data

Journal Articles

Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

Xu Gao, Shinya Aikawa, Nobuhiko Mitoma, Meng-Fang Lin, Takio Kizu, Toshihide Nabatame, Kazuhito Tsukagoshi

Appl. Phys. Lett. 105, 023503 (2014)

https://doi.org/10.1063/1.4890312

Published: July 2014

View articletitled, Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

Includes: Supplementary data

Journal Articles

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Takio Kizu, Shinya Aikawa, Nobuhiko Mitoma, Maki Shimizu, Xu Gao, Meng-Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi

Appl. Phys. Lett. 104, 152103 (2014)

https://doi.org/10.1063/1.4871511

Published: April 2014

View articletitled, Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Journal Articles

Stable amorphous In₂O₃-based thin-film transistors by incorporating SiO₂ to suppress oxygen vacancies

Nobuhiko Mitoma, Shinya Aikawa, Xu Gao, Takio Kizu, Maki Shimizu, Meng-Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi

Appl. Phys. Lett. 104, 102103 (2014)

https://doi.org/10.1063/1.4868303

Published: March 2014

View articletitled, Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies

Journal Articles

Modulation of effective damping constant using spin Hall effect

Shinya Kasai, Kouta Kondou, Hiroaki Sukegawa, Seiji Mitani, Kazuhito Tsukagoshi, Yoshichika Otani

Appl. Phys. Lett. 104, 092408 (2014)

https://doi.org/10.1063/1.4867649

Published: March 2014

View articletitled, Modulation of effective damping constant using spin Hall effect

Journal Articles

Effects of dopants in InO_x-based amorphous oxide semiconductors for thin-film transistor applications

Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi

Appl. Phys. Lett. 103, 172105 (2013)

https://doi.org/10.1063/1.4822175

Published: October 2013

View articletitled, Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Journal Articles

Realization of graphene field-effect transistor with high-κ HCa₂Nb₃O₁₀ nanoflake as top-gate dielectric

Wenwu Li, Song-Lin Li, Katsuyoshi Komatsu, Alex Aparecido-Ferreira, Yen-Fu Lin, Yong Xu, Minoru Osada, Takayoshi Sasaki, Kazuhito Tsukagoshi

Appl. Phys. Lett. 103, 023113 (2013)

https://doi.org/10.1063/1.4813537

Published: July 2013

View articletitled, Realization of graphene field-effect transistor with high-κ HCa2Nb3O10 nanoflake as top-gate dielectric

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Near-infrared-light-induced decomposition of Rhodamine B triggered by localized surface plasmon at gold square dimers with well-defined separation distance

Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors

Pronounced photogating effect in atomically thin WSe₂ with a self-limiting surface oxide layer

Carrier polarity engineering in carbon nanotube field-effect transistors by induced charges in polymer insulator

Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

Influence of Al₂O₃ layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors

Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Stable amorphous In₂O₃-based thin-film transistors by incorporating SiO₂ to suppress oxygen vacancies

Modulation of effective damping constant using spin Hall effect

Effects of dopants in InO_x-based amorphous oxide semiconductors for thin-film transistor applications

Realization of graphene field-effect transistor with high-κ HCa₂Nb₃O₁₀ nanoflake as top-gate dielectric

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