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Journal Articles

Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method

Tomoki Harada, Daisuke Ohori, Kazuhiko Endo, Seiji Samukawa, Tetsuo Ikari, Atsuhiko Fukuyama

J. Appl. Phys. 133, 125703 (2023)

https://doi.org/10.1063/5.0146578

Published: March 2023

View article titled, Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method

Journal Articles

Room-temperature and high-quality HfO₂/SiO₂ gate stacked film grown by neutral beam enhanced atomic layer deposition

Beibei Ge, Daisuke Ohori, Yi-Ho Chen, Takuya Ozaki, Kazuhiko Endo, Yiming Li, Jenn-Hwan Tarng, Seiji Samukawa

J. Vac. Sci. Technol. A 40, 022405 (2022)

https://doi.org/10.1116/6.0001607

Published: February 2022

View article titled, Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition

Journal Articles

Surface wettability of silicon nanopillar array structures fabricated by biotemplate ultimate top-down processes

Sou Takeuchi, Daisuke Ohori, Masahiro Sota, Teruhisa Ishida, Yiming Li, Jenn-Hwan Tarng, Kazuhiko Endo, Seiji Samukawa

J. Vac. Sci. Technol. A 39, 023202 (2021)

https://doi.org/10.1116/6.0000770

Published: February 2021

View article titled, Surface wettability of silicon nanopillar array structures fabricated by biotemplate ultimate top-down processes

Journal Articles

Atomic layer defect-free etching for germanium using HBr neutral beam

Takuya Fujii, Daisuke Ohori, Shuichi Noda, Yosuke Tanimoto, Daisuke Sato, Hideyuki Kurihara, Wataru Mizubayashi, Kazuhiko Endo, Yiming Li, Yao-Jen Lee, Takuya Ozaki, Seiji Samukawa

J. Vac. Sci. Technol. A 37, 051001 (2019)

https://doi.org/10.1116/1.5100547

Published: July 2019

View article titled, Atomic layer defect-free etching for germanium using HBr neutral beam

Journal Articles

Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam

Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, En-Tzu Lee, Yiming Li, Yao-Jen Lee, Takuya Ozaki, Seiji Samukawa

J. Vac. Sci. Technol. A 37, 021003 (2019)

https://doi.org/10.1116/1.5079692

Published: January 2019

View article titled, Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam

Journal Articles

Steep switching in trimmed-gate tunnel FET

Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda

AIP Advances 8, 095103 (2018)

https://doi.org/10.1063/1.5043570

Published: September 2018

View article titled, Steep switching in trimmed-gate tunnel FET

Journal Articles

Inhibition of initial bacterial adhesion on titanium surfaces by lactoferrin coating

Futami Nagano-Takebe, Hiroshi Miyakawa, Futoshi Nakazawa, Kazuhiko Endo

Biointerphases 9, 029006 (2014)

https://doi.org/10.1116/1.4867415

Published: March 2014

View article titled, Inhibition of initial bacterial adhesion on titanium surfaces by lactoferrin coating

Journal Articles

Low activation energy, high-quality oxidation of Si and Ge using neutral beam

Akira Wada, Kazuhiko Endo, Meishoku Masahara, Chi-Hsien Huang, Seiji Samukawa

Appl. Phys. Lett. 98, 203111 (2011)

https://doi.org/10.1063/1.3592576

Published: May 2011

View article titled, Low activation energy, high-quality oxidation of Si and Ge using neutral beam

Journal Articles

Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Meishoku Masahara, Yongxun Liu, Kazuhiko Endo, Takashi Matsukawa, Kunihiro Sakamoto, Kenichi Ishii, Shinichi O’uchi, Etsuro Sugimata, Hiromi Yamauchi, Eiichi Suzuki

Appl. Phys. Lett. 88, 072103 (2006)

https://doi.org/10.1063/1.2173715

Published: February 2006

View article titled, Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Journal Articles

Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Meishoku Masahara, Shinichi Hosokawa, Takashi Matsukawa, Kazuhiko Endo, Yuuichi Naitou, Hisao Tanoue, Eiichi Suzuki

Appl. Phys. Lett. 85, 4139–4141 (2004)

https://doi.org/10.1063/1.1812571

Published: November 2004

View article titled, Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Journal Articles

Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

Kazuhiko Endo, Keisuke Shinoda, Toru Tatsumi

J. Appl. Phys. 86, 2739–2745 (1999)

https://doi.org/10.1063/1.371119

Published: September 1999

View article titled, Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

Journal Articles

Plasma fluorination of polyimide thin films

Kazuhiko Endo, Toru Tatsumi

J. Vac. Sci. Technol. A 15, 3134–3137 (1997)

https://doi.org/10.1116/1.580857

Published: November 1997

View article titled, Plasma fluorination of polyimide thin films

Journal Articles

Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi

Appl. Phys. Lett. 70, 2616–2618 (1997)

https://doi.org/10.1063/1.118935

Published: May 1997

View article titled, Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics

Journal Articles

Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi, Yoshihisa Matsubara

Appl. Phys. Lett. 70, 1078–1079 (1997)

https://doi.org/10.1063/1.118490

Published: March 1997

View article titled, Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Journal Articles

Nitrogen doped fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi

Appl. Phys. Lett. 68, 3656–3658 (1996)

https://doi.org/10.1063/1.115761

Published: June 1996

View article titled, Nitrogen doped fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Journal Articles

Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi

Appl. Phys. Lett. 68, 2864–2866 (1996)

https://doi.org/10.1063/1.116350

Published: May 1996

View article titled, Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Journal Articles

Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi

J. Appl. Phys. 78, 1370–1372 (1995)

https://doi.org/10.1063/1.360313

Published: July 1995

View article titled, Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Journal Articles

Extremely high vacuum system for dynamical surface analysis

Katsuyuki Tsukui, Kazuhiko Endo, Ryu Hasunuma, Toshiaki Osaka, Iwao Ohdomari, Nobuaki Yagi, Hajime Aihara

J. Vac. Sci. Technol. A 11, 2655–2658 (1993)

https://doi.org/10.1116/1.578621

Published: September 1993

View article titled, Extremely high vacuum system for dynamical surface analysis

Journal Articles

Treatment of the wall materials of extremely high vacuum chamber for dynamical surface analysis

Katsuyuki Tsukui, Ryu Hasunuma, Kazuhiko Endo, Toshiaki Osaka, Iwao Ohdomari

J. Vac. Sci. Technol. A 11, 417–421 (1993)

https://doi.org/10.1116/1.578746

Published: March 1993

View article titled, Treatment of the wall materials of extremely high vacuum chamber for dynamical surface analysis

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Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method

Room-temperature and high-quality HfO₂/SiO₂ gate stacked film grown by neutral beam enhanced atomic layer deposition

Surface wettability of silicon nanopillar array structures fabricated by biotemplate ultimate top-down processes

Atomic layer defect-free etching for germanium using HBr neutral beam

Atomic layer germanium etching for 3D Fin-FET using chlorine neutral beam

Steep switching in trimmed-gate tunnel FET

Inhibition of initial bacterial adhesion on titanium surfaces by lactoferrin coating

Low activation energy, high-quality oxidation of Si and Ge using neutral beam

Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Plasma deposition of low-dielectric-constant fluorinated amorphous carbon

Plasma fluorination of polyimide thin films

Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics

Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Nitrogen doped fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Extremely high vacuum system for dynamical surface analysis

Treatment of the wall materials of extremely high vacuum chamber for dynamical surface analysis

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