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Journal Articles

Plasma-etch-free β-Ga₂O₃–NiO–PtO_x merged PiN Schottky diode with high-voltage stress reliability

Joseph A. Spencer, Yuan Qin, Alan G. Jacobs, Boyan Wang, Neeraj Nepal, Hannah N. Masten, Matthew Porter, Bixuan Wang, Geoffrey M. Foster, Akito Kuramata, Karl D. Hobart, Travis J. Anderson, Yuhao Zhang, Marko J. Tadjer

APL Electronic Devices 1, 016108 (2025)

https://doi.org/10.1063/5.0238709

Published: March 2025

View articletitled, Plasma-etch-free β-Ga2O3–NiO–PtOx merged PiN Schottky diode with high-voltage stress reliability

Journal Articles

Structural, electrical, and thermal characterization of homoepitaxial close-injection showerhead metalorganic chemical vapor deposition β-Ga₂O₃ enhancement-mode recessed-gate MOSFETs

Hannah N. Masten, Gustavo Armando Alvarez, Corey Halverson, Joyce Christiansen-Salameh, Eugene Y. Kwon, Michael Liao, James Spencer Lundh, Audrey Rose Gutierrez, Fikadu Alema, Andrei Osinsky, Alan G. Jacobs, Mark S. Goorsky, Marc H. Weber, Zhiting Tian, Karl D. Hobart, Marko J. Tadjer

J. Vac. Sci. Technol. A 43, 022703 (2025)

https://doi.org/10.1116/6.0004176

Published: February 2025

View articletitled, Structural, electrical, and thermal characterization of homoepitaxial close-injection showerhead metalorganic chemical vapor deposition β-Ga2O3 enhancement-mode recessed-gate MOSFETs

Journal Articles

Electrothermal enhancement of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer

James Spencer Lundh, Cory Cress, Alan G. Jacobs, Zhe Cheng, Hannah N. Masten, Joseph A. Spencer, Kohei Sasaki, James Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Travis J. Anderson, Marko J. Tadjer, Karl D. Hobart, Michael A. Mastro

J. Appl. Phys. 136, 224502 (2024)

https://doi.org/10.1063/5.0225896

Published: December 2024

View articletitled, Electrothermal enhancement of β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer

Journal Articles

Epitaxial growth of GaN on β-Ga₂O₃ via RF plasma nitridation

Frank P. Kelly, Matthew M. Landi, Riley E. Vesto, Marko J. Tadjer, Karl D. Hobart, Kyekyoon Kim

J. Appl. Phys. 136, 155701 (2024)

https://doi.org/10.1063/5.0233590

Published: October 2024

View articletitled, Epitaxial growth of GaN on β-Ga2O3 via RF plasma nitridation

Journal Articles

Reduced temperature in lateral (Al_xGa₁₋_x)₂O₃/Ga₂O₃ heterojunction field effect transistor capped with nanocrystalline diamond

Hannah N. Masten, James Spencer Lundh, Tatyana I. Feygelson, Kohei Sasaki, Zhe Cheng, Joseph A. Spencer, Pai-Ying Liao, Jennifer K. Hite, Daniel J. Pennachio, Alan G. Jacobs, Michael A. Mastro, Boris N. Feigelson, Akito Kuramata, Peide Ye, Samuel Graham, Bradford B. Pate, Karl D. Hobart, Travis J. Anderson, Marko J. Tadjer

Appl. Phys. Lett. 124, 153502 (2024)

https://doi.org/10.1063/5.0191771

Published: April 2024

View articletitled, Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Includes: Supplementary data

Journal Articles

Assessment of channel temperature in β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

James Spencer Lundh, Georges Pavlidis, Kohei Sasaki, Andrea Centrone, Joseph A. Spencer, Hannah N. Masten, Marc Currie, Alan G. Jacobs, Keita Konishi, Akito Kuramata, Karl D. Hobart, Travis J. Anderson, Marko J. Tadjer

Appl. Phys. Lett. 124, 054103 (2024)

https://doi.org/10.1063/5.0177609

Published: January 2024

View articletitled, Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Journal Articles

Experimental determination of critical thickness limitations of (010) β -(Al_xGa_{1 − x})₂O₃ heteroepitaxial films

James Spencer Lundh, Kenny Huynh, Michael Liao, William Olsen, Kaicheng Pan, Kohei Sasaki, Keita Konishi, Hannah N. Masten, Jennifer K. Hite, Michael A. Mastro, Nadeemullah A. Mahadik, Mark Goorsky, Akito Kuramata, Karl D. Hobart, Travis J. Anderson, Marko J. Tadjer

Appl. Phys. Lett. 123, 222104 (2023)

https://doi.org/10.1063/5.0174682

Published: November 2023

View articletitled, Experimental determination of critical thickness limitations of (010) β -(AlxGa1 − x)2O3 heteroepitaxial films

Journal Articles

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga₂O₃:N with high mobility

Joseph A. Spencer, Marko J. Tadjer, Alan G. Jacobs, Michael A. Mastro, John L. Lyons, Jaime A. Freitas, Jr., James C. Gallagher, Quang T. Thieu, Kohei Sasaki, Akito Kuramata, Yuhao Zhang, Travis J. Anderson, Karl D. Hobart

Appl. Phys. Lett. 121, 192102 (2022)

https://doi.org/10.1063/5.0120494

Published: November 2022

View articletitled, Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

Includes: Supplementary data

Journal Articles

Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications

Nicholas J. Hines, Luke Yates, Brian M. Foley, Zhe Cheng, Thomas L. Bougher, Mark S. Goorsky, Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Samuel Graham

Rev. Sci. Instrum. 92, 044907 (2021)

https://doi.org/10.1063/5.0039966

Published: April 2021

View articletitled, Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications

Includes: Supplementary data

Journal Articles

Delta-doped β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterostructure field-effect transistors by ozone molecular beam epitaxy

Marko J. Tadjer, Kohei Sasaki, Daiki Wakimoto, Travis J. Anderson, Michael A. Mastro, James C. Gallagher, Alan G. Jacobs, Alyssa L. Mock, Andrew D. Koehler, Mona Ebrish, Karl D. Hobart, Akito Kuramata

J. Vac. Sci. Technol. A 39, 033402 (2021)

https://doi.org/10.1116/6.0000932

Published: March 2021

View articletitled, Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy

Includes: Supplementary data

Journal Articles

Effect of probe geometry during measurement of >100 A Ga₂O₃ vertical rectifiers

Ribhu Sharma, Minghan Xian, Chaker Fares, Mark E. Law, Marko Tadjer, Karl D. Hobart, Fan Ren, Stephen J. Pearton

J. Vac. Sci. Technol. A 39, 013406 (2021)

https://doi.org/10.1116/6.0000815

Published: December 2020

View articletitled, Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers

Journal Articles

Structural transition and recovery of Ge implanted β -Ga₂O₃

Elaf A. Anber, Daniel Foley, Andrew C. Lang, James Nathaniel, James L. Hart, Marko J. Tadjer, Karl D. Hobart, Stephen Pearton, Mitra L. Taheri

Appl. Phys. Lett. 117, 152101 (2020)

https://doi.org/10.1063/5.0022170

Published: October 2020

View articletitled, Structural transition and recovery of Ge implanted β -Ga2O3

Includes: Supplementary data

Journal Articles

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O₃ treatments

Geoffrey M. Foster, Andrew Koehler, Mona Ebrish, James Gallagher, Travis Anderson, Brenton Noesges, Leonard Brillson, Brendan Gunning, Karl D. Hobart, Francis Kub

Appl. Phys. Lett. 117, 082103 (2020)

https://doi.org/10.1063/5.0021153

Published: August 2020

View articletitled, Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

Journal Articles

Integration of polycrystalline Ga₂O₃ on diamond for thermal management

Zhe Cheng, Virginia D. Wheeler, Tingyu Bai, Jingjing Shi, Marko J. Tadjer, Tatyana Feygelson, Karl D. Hobart, Mark S. Goorsky, Samuel Graham

Appl. Phys. Lett. 116, 062105 (2020)

https://doi.org/10.1063/1.5125637

Published: February 2020

View articletitled, Integration of polycrystalline Ga2O3 on diamond for thermal management

Journal Articles

Thermal conductance across β -Ga₂O₃-diamond van der Waals heterogeneous interfaces

Zhe Cheng, Luke Yates, Jingjing Shi, Marko J. Tadjer, Karl D. Hobart, Samuel Graham

APL Mater. 7, 031118 (2019)

https://doi.org/10.1063/1.5089559

Published: March 2019

View articletitled, Thermal conductance across β -Ga2O3-diamond van der Waals heterogeneous interfaces

Journal Articles

Coefficients of thermal expansion of single crystalline β -Ga₂O₃ and in-plane thermal strain calculations of various materials combinations with β -Ga₂O₃

Michael E. Liao, Chao Li, Hsuan Ming Yu, Eva Rosker, Marko J. Tadjer, Karl D. Hobart, Mark S. Goorsky

APL Mater. 7, 022517 (2019)

https://doi.org/10.1063/1.5054327

Published: December 2018

View articletitled, Coefficients of thermal expansion of single crystalline β -Ga2O3 and in-plane thermal strain calculations of various materials combinations with β -Ga2O3

Journal Articles

High-resolution dislocation imaging and micro-structural analysis of HVPE- β Ga₂O₃ films using monochromatic synchrotron topography

Nadeemullah A. Mahadik, Marko J. Tadjer, Peter L. Bonanno, Karl D. Hobart, Robert E. Stahlbush, Travis J. Anderson, Akito Kuramata

APL Mater. 7, 022513 (2019)

https://doi.org/10.1063/1.5051633

Published: December 2018

View articletitled, High-resolution dislocation imaging and micro-structural analysis of HVPE- β Ga2O3 films using monochromatic synchrotron topography

Journal Articles

High resistivity halide vapor phase homoepitaxial β-Ga₂O₃ films co-doped by silicon and nitrogen

Marko J. Tadjer, Andrew D. Koehler, Jaime A. Freitas, Jr., James C. Gallagher, Matty C. Specht, Evan R. Glaser, Karl D. Hobart, Travis J. Anderson, Fritz J. Kub, Quang T. Thieu, Kohei Sasaki, Daiki Wakimoto, Ken Goto, Shinya Watanabe, Akito Kuramata

Appl. Phys. Lett. 113, 192102 (2018)

https://doi.org/10.1063/1.5045601

Published: November 2018

View articletitled, High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen

Journal Articles

Valence band offsets for CuI on (-201) bulk Ga₂O₃ and epitaxial (010) (Al_0.14Ga_0.86)₂O₃

Chaker Fares, F. Ren, David C. Hays, B. P. Gila, Marko Tadjer, Karl D. Hobart, S. J. Pearton

Appl. Phys. Lett. 113, 182101 (2018)

https://doi.org/10.1063/1.5055941

Published: October 2018

View articletitled, Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3

Journal Articles

Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond

Aditya Sood, Jungwan Cho, Karl D. Hobart, Tatyana I. Feygelson, Bradford B. Pate, Mehdi Asheghi, David G. Cahill, Kenneth E. Goodson

J. Appl. Phys. 119, 175103 (2016)

https://doi.org/10.1063/1.4948335

Published: May 2016

View articletitled, Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond

Includes: Supplementary data

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Plasma-etch-free β-Ga₂O₃–NiO–PtO_x merged PiN Schottky diode with high-voltage stress reliability

Structural, electrical, and thermal characterization of homoepitaxial close-injection showerhead metalorganic chemical vapor deposition β-Ga₂O₃ enhancement-mode recessed-gate MOSFETs

Electrothermal enhancement of β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer

Epitaxial growth of GaN on β-Ga₂O₃ via RF plasma nitridation

Reduced temperature in lateral (Al_xGa₁₋_x)₂O₃/Ga₂O₃ heterojunction field effect transistor capped with nanocrystalline diamond

Assessment of channel temperature in β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Experimental determination of critical thickness limitations of (010) β -(Al_xGa_{1 − x})₂O₃ heteroepitaxial films

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga₂O₃:N with high mobility

Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications

Delta-doped β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterostructure field-effect transistors by ozone molecular beam epitaxy

Effect of probe geometry during measurement of >100 A Ga₂O₃ vertical rectifiers

Structural transition and recovery of Ge implanted β -Ga₂O₃

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O₃ treatments

Integration of polycrystalline Ga₂O₃ on diamond for thermal management

Thermal conductance across β -Ga₂O₃-diamond van der Waals heterogeneous interfaces

Coefficients of thermal expansion of single crystalline β -Ga₂O₃ and in-plane thermal strain calculations of various materials combinations with β -Ga₂O₃

High-resolution dislocation imaging and micro-structural analysis of HVPE- β Ga₂O₃ films using monochromatic synchrotron topography

High resistivity halide vapor phase homoepitaxial β-Ga₂O₃ films co-doped by silicon and nitrogen

Valence band offsets for CuI on (-201) bulk Ga₂O₃ and epitaxial (010) (Al_0.14Ga_0.86)₂O₃

Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond

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