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Journal Articles

Gain recovery dynamics in active type-II semiconductor heterostructures

F. Schäfer, M. Stein, J. Lorenz, F. Dobener, C. Ngo, J. T. Steiner, C. Fuchs, W. Stolz, K. Volz, T. Meier, J. Hader, J. V. Moloney, S. W. Koch, S. Chatterjee
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 082104 (2023)
https://doi.org/10.1063/5.0128777
Published: February 2023
View article titled, Gain recovery dynamics in active type-II semiconductor heterostructures
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Journal Articles

Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface

G. Mette, J. E. Zimmermann, A. Lerch, K. Brixius, J. Güdde, A. Beyer, M. Dürr, K. Volz, W. Stolz, U. Höfer
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 081602 (2020)
https://doi.org/10.1063/5.0021092
Published: August 2020
View article titled, Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface
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Includes: Supplementary data
Journal Articles

Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures

L. Ostheim, P. J. Klar, Y. Moryson, M. Rohnke, A. Beyer, M. Volk, M. Munde, W. Stolz, K. Volz
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 215704 (2019)
https://doi.org/10.1063/1.5124049
Published: December 2019
View article titled, Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures
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Journal Articles

Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N

B. Fluegel, D. A. Beaton, K. Alberi, K. Volz, W. Stolz
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 145704 (2019)
https://doi.org/10.1063/1.5086181
Published: April 2019
View article titled, Linewidth broadening and tunneling of excitons bound to N pairs in dilute GaAs:N
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Journal Articles

Influence of the atom source operating parameters on the structural and optical properties of In x Ga 1 − x N nanowires grown by plasma-assisted molecular beam epitaxy

P. Hille, F. Walther, P. Klement, J. Müßener, J. Schörmann, J. Kaupe, S. Mitić, N. W. Rosemann, S. Chatterjee, A. Beyer, K. I. Gries, K. Volz, M. Eickhoff
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 165703 (2018)
https://doi.org/10.1063/1.5050391
Published: October 2018
View article titled, Influence of the atom source operating parameters on the structural and optical properties of In x Ga 1 − x N nanowires grown by plasma-assisted molecular beam epitaxy
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Journal Articles

1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)

E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, K. Volz
Journal: AIP Advances
AIP Advances 8, 055329 (2018)
https://doi.org/10.1063/1.5034083
Published: May 2018
View article titled, 1 eV Ga(NAsSb) grown by MOVPE using di-<em>tertiary</em>-butyl-arsano-amine (DTBAA)
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Journal Articles

Structural and electronic properties of isovalent boron atoms in GaAs

C. M. Krammel, L. Nattermann, E. Sterzer, K. Volz, P. M. Koenraad
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161589 (2018)
https://doi.org/10.1063/1.5011166
Published: February 2018
View article titled, Structural and electronic properties of isovalent boron atoms in GaAs
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Includes: Supplementary data
Journal Articles

Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry

Z. L. Bushell, R. M. Joseph, L. Nattermann, P. Ludewig, K. Volz, J. L. Keddie, S. J. Sweeney
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 045701 (2018)
https://doi.org/10.1063/1.5006974
Published: January 2018
View article titled, Optical functions and critical points of dilute bismide alloys studied by spectroscopic ellipsometry
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Journal Articles

Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates

W. Guo, Y. Mols, J. Belz, A. Beyer, K. Volz, A. Schulze, R. Langer, B. Kunert
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 025303 (2017)
https://doi.org/10.1063/1.4991481
Published: July 2017
View article titled, Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates
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Journal Articles

Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures

R. Woscholski, S. Gies, M. Wiemer, M. K. Shakfa, A. Rahimi-Iman, P. Ludewig, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, M. Koch
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 145707 (2016)
https://doi.org/10.1063/1.4945434
Published: April 2016
View article titled, Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures
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Journal Articles

Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

K. Jandieri, P. Ludewig, T. Wegele, A. Beyer, B. Kunert, P. Springer, S. D. Baranovskii, S. W. Koch, K. Volz, W. Stolz
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 065701 (2015)
https://doi.org/10.1063/1.4928331
Published: August 2015
View article titled, Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures
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Journal Articles

Self-assembly of ordered wurtzite/rock salt heterostructures—A new view on phase separation in MgxZn1−xO

K. I. Gries, T. A. Wassner, S. Vogel, J. Bruckbauer, I. Häusler, R. Straubinger, A. Beyer, A. Chernikov, B. Laumer, M. Kracht, C. Heiliger, J. Janek, S. Chatterjee, K. Volz, M. Eickhoff
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 045706 (2015)
https://doi.org/10.1063/1.4926776
Published: July 2015
View article titled, Self-assembly of ordered wurtzite/rock salt heterostructures—A new view on phase separation in Mg<sub>x</sub>Zn<sub>1−x</sub>O
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Includes: Supplementary data
Journal Articles

Thermal quenching of photoluminescence in Ga(AsBi)

M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii, M. Koch
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 025709 (2015)
https://doi.org/10.1063/1.4905687
Published: January 2015
View article titled, Thermal quenching of photoluminescence in Ga(AsBi)
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Journal Articles

Effect of boron localized states on the conduction band transport in BxGa1−xP

S. Petznick, L. Ostheim, P. J. Klar, S. Liebich, K. Volz, W. Stolz
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 222105 (2014)
https://doi.org/10.1063/1.4903244
Published: December 2014
View article titled, Effect of boron localized states on the conduction band transport in B<sub><em>x</em></sub>Ga<sub>1−</sub><sub><em>x</em></sub>P
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Journal Articles

Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells

N. W. Rosemann, B. Metzger, B. Kunert, K. Volz, W. Stolz, S. Chatterjee
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 252105 (2013)
https://doi.org/10.1063/1.4852575
Published: December 2013
View article titled, Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells
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Journal Articles

Atomic structure of (110) anti-phase boundaries in GaP on Si(001)

A. Beyer, B. Haas, K. I. Gries, K. Werner, M. Luysberg, W. Stolz, K. Volz
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 032107 (2013)
https://doi.org/10.1063/1.4815985
Published: July 2013
View article titled, Atomic structure of (110) anti-phase boundaries in GaP on Si(001)
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Journal Articles

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

P. Ludewig, N. Knaub, N. Hossain, S. Reinhard, L. Nattermann, I. P. Marko, S. R. Jin, K. Hild, S. Chatterjee, W. Stolz, S. J. Sweeney, K. Volz
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 242115 (2013)
https://doi.org/10.1063/1.4811736
Published: June 2013
View article titled, Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
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Journal Articles

Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer

L. Desplanque, S. El Kazzi, C. Coinon, S. Ziegler, B. Kunert, A. Beyer, K. Volz, W. Stolz, Y. Wang, P. Ruterana, X. Wallart
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 142111 (2012)
https://doi.org/10.1063/1.4758292
Published: October 2012
View article titled, Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layer
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Journal Articles

Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers

N. Hossain, S. R. Jin, S. Liebich, M. Zimprich, K. Volz, B. Kunert, W. Stolz, S. J. Sweeney
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 011107 (2012)
https://doi.org/10.1063/1.4733312
Published: July 2012
View article titled, Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers
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Journal Articles

GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure

A. Beyer, J. Ohlmann, S. Liebich, H. Heim, G. Witte, W. Stolz, K. Volz
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 083534 (2012)
https://doi.org/10.1063/1.4706573
Published: April 2012
View article titled, GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
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