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Journal Articles

Determination of donor and DX center capture characteristics by pulsed photoluminescence

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M. Lamprecht, K. Thonke
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 095704 (2018)
https://doi.org/10.1063/1.5024345
Published: March 2018
View articletitled, Determination of donor and DX center capture characteristics by pulsed photoluminescence
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Journal Articles

Evidence of terbium and oxygen co-segregation in annealed AlN:Tb

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V. C. Angadi, F. Benz, I. Tischer, K. Thonke, T. Aoki, T. Walther
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 222102 (2017)
https://doi.org/10.1063/1.4984237
Published: May 2017
View articletitled, Evidence of terbium and oxygen co-segregation in annealed AlN:Tb
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Journal Articles

Persistent photoconductivity in ZnO nanowires: Influence of oxygen and argon ambient

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M. Madel, F. Huber, R. Mueller, B. Amann, M. Dickel, Y. Xie, K. Thonke
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 124301 (2017)
https://doi.org/10.1063/1.4978911
Published: March 2017
View articletitled, Persistent photoconductivity in ZnO nanowires: Influence of oxygen and argon ambient
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Journal Articles

Stacking fault emission in GaN: Influence of n-type doping

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M. Hocker, I. Tischer, B. Neuschl, K. Thonke, M. Caliebe, M. Klein, F. Scholz
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 185703 (2016)
https://doi.org/10.1063/1.4949512
Published: May 2016
View articletitled, Stacking fault emission in GaN: Influence of n-type doping
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Journal Articles

Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy

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T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller-Caspary, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, D. Hommel, F. Scholz, A. Rosenauer
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 175701 (2016)
https://doi.org/10.1063/1.4948385
Published: May 2016
View articletitled, Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
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Journal Articles

Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state

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M. Lamprecht, C. Grund, B. Neuschl, K. Thonke, Z. Bryan, R. Collazo, Z. Sitar
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 155701 (2016)
https://doi.org/10.1063/1.4946828
Published: April 2016
View articletitled, Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state
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Journal Articles

Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN

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B. Neuschl, M. L. Gödecke, K. Thonke, F. Lipski, M. Klein, F. Scholz, M. Feneberg
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 215705 (2015)
https://doi.org/10.1063/1.4936124
Published: December 2015
View articletitled, Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN
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Journal Articles

Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures

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B. Neuschl, J. Helbing, K. Thonke, T. Meisch, J. Wang, F. Scholz
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 183507 (2014)
https://doi.org/10.1063/1.4901907
Published: November 2014
View articletitled, Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures
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Journal Articles

Composition dependent valence band order in c-oriented wurtzite AlGaN layers

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B. Neuschl, J. Helbing, M. Knab, H. Lauer, M. Madel, K. Thonke, T. Meisch, K. Forghani, F. Scholz, M. Feneberg
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 113506 (2014)
https://doi.org/10.1063/1.4895995
Published: September 2014
View articletitled, Composition dependent valence band order in c-oriented wurtzite AlGaN layers
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Journal Articles

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

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B. Neuschl, K. Thonke, M. Feneberg, R. Goldhahn, T. Wunderer, Z. Yang, N. M. Johnson, J. Xie, S. Mita, A. Rice, R. Collazo, Z. Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 122105 (2013)
https://doi.org/10.1063/1.4821183
Published: September 2013
View articletitled, Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
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Journal Articles

Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiN x interlayers

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B. Neuschl, K. J. Fujan, M. Feneberg, I. Tischer, K. Thonke, K. Forghani, M. Klein, F. Scholz
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 192108 (2010)
https://doi.org/10.1063/1.3515865
Published: November 2010
View articletitled, Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiN x interlayers
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Journal Articles

Growth of cubic GaN quantum dots

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T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, D. J. As
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1292, 165–168 (2010)
https://doi.org/10.1063/1.3518287
Published: November 2010
View articletitled, Growth of cubic GaN quantum dots
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Journal Articles

Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets

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K. J. Fujan, M. Feneberg, B. Neuschl, T. Meisch, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek, U. Kaiser
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 101904 (2010)
https://doi.org/10.1063/1.3487935
Published: September 2010
View articletitled, Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
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Journal Articles

Semiconductor quantum dots through conversion of micelle-generated metal clusters

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D. Wahl, A. Ladenburger, M. Feneberg, W. Schoch, K. Thonke, R. Sauer
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 093105 (2009)
https://doi.org/10.1063/1.3216849
Published: August 2009
View articletitled, Semiconductor quantum dots through conversion of micelle-generated metal clusters
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Journal Articles

Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering

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R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y. Taniyasu, M. Kasu
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 031903 (2009)
https://doi.org/10.1063/1.3186044
Published: July 2009
View articletitled, Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering
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Journal Articles

Structural and cathodoluminescence properties of ZnO nanorods after Ga-implantation and annealing

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L. D. Yao, D. Weissenberger, M. Dürrschnabel, D. Gerthsen, I. Tischer, M. Wiedenmann, M. Feneberg, A. Reiser, K. Thonke
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 103521 (2009)
https://doi.org/10.1063/1.3132865
Published: May 2009
View articletitled, Structural and cathodoluminescence properties of ZnO nanorods after Ga-implantation and annealing
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Journal Articles

Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods

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D. Weissenberger, D. Gerthsen, A. Reiser, G. M. Prinz, M. Feneberg, K. Thonke, H. Zhou, J. Sartor, J. Fallert, C. Klingshirn, H. Kalt
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 042107 (2009)
https://doi.org/10.1063/1.3075849
Published: January 2009
View articletitled, Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods
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Journal Articles

Incorporation of Ga in Zn O ∕ Ga N epitaxial films

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R. Schneider, M. Schirra, A. Reiser, G. M. Prinz, W. Limmer, R. Sauer, K. Thonke, J. Biskupek, U. Kaiser
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 131905 (2008)
https://doi.org/10.1063/1.2905284
Published: April 2008
View articletitled, Incorporation of Ga in Zn O ∕ Ga N epitaxial films
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Journal Articles

Conductivity of single ZnO nanorods after Ga implantation in a focused-ion-beam system

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D. Weissenberger, M. Dürrschnabel, D. Gerthsen, F. Pérez-Willard, A. Reiser, G. M. Prinz, M. Feneberg, K. Thonke, R. Sauer
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 132110 (2007)
https://doi.org/10.1063/1.2791006
Published: September 2007
View articletitled, Conductivity of single ZnO nanorods after Ga implantation in a focused-ion-beam system
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Journal Articles

Cathodoluminescence study of single zinc oxide nanopillars with high spatial and spectral resolution

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M. Schirra, A. Reiser, G. M. Prinz, A. Ladenburger, K. Thonke, R. Sauer
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 113509 (2007)
https://doi.org/10.1063/1.2735411
Published: June 2007
View articletitled, Cathodoluminescence study of single zinc oxide nanopillars with high spatial and spectral resolution
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