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Journal Articles

Defect evolution in ultralow energy, high dose helium implants of silicon performed at elevated temperatures

K. Haynes, X. Hu, B. D. Wirth, C. Hatem, K. S. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 165708 (2018)
https://doi.org/10.1063/1.5046096
Published: October 2018
View article titled, Defect evolution in ultralow energy, high dose helium implants of silicon performed at elevated temperatures
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Includes: Supplementary data
Journal Articles

Modulating the resistivity of MoS2 through low energy phosphorus plasma implantation

K. Haynes, R. Murray, Z. Weinrich, X. Zhao, D. Chiappe, S. Sutar, I. Radu, C. Hatem, S. S. Perry, K. S. Jones
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 262102 (2017)
https://doi.org/10.1063/1.4989829
Published: June 2017
View article titled, Modulating the resistivity of MoS<sub>2</sub> through low energy phosphorus plasma implantation
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Journal Articles

Use of a buried loop layer as a detector of interstitial flux during oxidation of SiGe heterostructures

Thomas P. Martin, Henry L. Aldridge, Jr., K. S. Jones, Renata A. Camillo-Castillo
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 021101 (2017)
https://doi.org/10.1116/1.4972516
Published: December 2016
View article titled, Use of a buried loop layer as a detector of interstitial flux during oxidation of SiGe heterostructures
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Journal Articles

Activation of Si implants into InAs characterized by Raman scattering

A. G. Lind, T. P. Martin, Jr., V. C. Sorg, E. L. Kennon, V. Q. Truong, H. L. Aldridge, C. Hatem, M. O. Thompson, K. S. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 095705 (2016)
https://doi.org/10.1063/1.4942880
Published: March 2016
View article titled, Activation of Si implants into InAs characterized by Raman scattering
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Journal Articles

Concentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As

H. L. Aldridge, Jr., A. G. Lind, M. E. Law, C. Hatem, K. S. Jones
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 042113 (2014)
https://doi.org/10.1063/1.4892079
Published: July 2014
View article titled, Concentration-dependent diffusion of ion-implanted silicon in In<sub>0.53</sub>Ga<sub>0.47</sub>As
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Journal Articles

Maximizing electrical activation of ion-implanted Si in In0.53Ga0.47As

A. G. Lind, N. G. Rudawski, N. J. Vito, C. Hatem, M. C. Ridgway, R. Hengstebeck, B. R. Yates, K. S. Jones
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 232102 (2013)
https://doi.org/10.1063/1.4835097
Published: December 2013
View article titled, Maximizing electrical activation of ion-implanted Si in In<sub>0.53</sub>Ga<sub>0.47</sub>As
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Journal Articles

Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors

M. R. Holzworth, N. G. Rudawski, P. G. Whiting, S. J. Pearton, K. S. Jones, L. Lu, T. S. Kang, F. Ren, E. Patrick, M. E. Law
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 023503 (2013)
https://doi.org/10.1063/1.4813535
Published: July 2013
View article titled, Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors
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Journal Articles

Substrate orientation dependence on the solid phase epitaxial growth rate of Ge

B. L. Darby, B. R. Yates, I. Martin-Bragado, J. L. Gomez-Selles, R. G. Elliman, K. S. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 033505 (2013)
https://doi.org/10.1063/1.4776718
Published: January 2013
View article titled, Substrate orientation dependence on the solid phase epitaxial growth rate of Ge
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Journal Articles

Activation and thermal stability of ultra-shallow B+-implants in Ge

B. R. Yates, B. L. Darby, D. H. Petersen, O. Hansen, R. Lin, P. F. Nielsen, L. Romano, B. L. Doyle, A. Kontos, K. S. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 123525 (2012)
https://doi.org/10.1063/1.4770474
Published: December 2012
View article titled, Activation and thermal stability of ultra-shallow B<sup>+</sup>-implants in Ge
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Journal Articles

Role of nucleation sites on the formation of nanoporous Ge

B. R. Yates, B. L. Darby, R. G. Elliman, K. S. Jones
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 131907 (2012)
https://doi.org/10.1063/1.4755886
Published: September 2012
View article titled, Role of nucleation sites on the formation of nanoporous Ge
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Journal Articles

Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes

N. G. Rudawski, B. L. Darby, B. R. Yates, K. S. Jones, R. G. Elliman, A. A. Volinsky
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 083111 (2012)
https://doi.org/10.1063/1.3689781
Published: February 2012
View article titled, Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes
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Journal Articles

B segregation to grain boundaries and diffusion in polycrystalline Si with flash annealing

S. Jin, K. S. Jones, M. E. Law, R. Camillo-Castillo
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 044508 (2012)
https://doi.org/10.1063/1.3688246
Published: February 2012
View article titled, B segregation to grain boundaries and diffusion in polycrystalline Si with flash annealing
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Journal Articles

Pulsed-laser atom probe tomography of p-type field effect transistors on Si-on-insulator substrates

S. Jin, K. S. Jones, P. A. Ronsheim, M. Hatzistergos
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 061203 (2011)
https://doi.org/10.1116/1.3647879
Published: October 2011
View article titled, Pulsed-laser atom probe tomography of <em>p</em>-type field effect transistors on Si-on-insulator substrates
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Journal Articles

Interface stability in stressed solid-phase epitaxial growth

S. Morarka, S. Jin, N. G. Rudawski, K. S. Jones, M. E. Law, R. G. Elliman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 041210 (2011)
https://doi.org/10.1116/1.3610172
Published: August 2011
View article titled, Interface stability in stressed solid-phase epitaxial growth
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Journal Articles

Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

M. R. Holzworth, N. G. Rudawski, S. J. Pearton, K. S. Jones, L. Lu, T. S. Kang, F. Ren, J. W. Johnson
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 122103 (2011)
https://doi.org/10.1063/1.3569715
Published: March 2011
View article titled, Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor
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Journal Articles

Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors

Chih-Yang Chang, Travis Anderson, Jennifer Hite, Liu Lu, Chien-Fong Lo, Byung-Hwan Chu, D. J. Cheney, E. A. Douglas, B. P. Gila, F. Ren, G. D. Via, Patrick Whiting, R. Holzworth, K. S. Jones, Soohwan Jang, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 1044–1047 (2010)
https://doi.org/10.1116/1.3491038
Published: September 2010
View article titled, Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
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Journal Articles

Effect of n - and p -type dopants on patterned amorphous regrowth

S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, R. G. Elliman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1F1–C1F5 (2010)
https://doi.org/10.1116/1.3207953
Published: March 2010
View article titled, Effect of n - and p -type dopants on patterned amorphous regrowth
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Journal Articles

Stressed multidirectional solid-phase epitaxial growth of Si

N. G. Rudawski, K. S. Jones, S. Morarka, M. E. Law, R. G. Elliman
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 081101 (2009)
https://doi.org/10.1063/1.3091395
Published: April 2009
View article titled, Stressed multidirectional solid-phase epitaxial growth of Si
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Journal Articles

Modeling two-dimensional solid-phase epitaxial regrowth using level set methods

S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, R. G. Elliman
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 053701 (2009)
https://doi.org/10.1063/1.3082086
Published: March 2009
View article titled, Modeling two-dimensional solid-phase epitaxial regrowth using level set methods
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Journal Articles

An Atomistic Model of Stressed Si Solid‐Phase Epitaxy

N. G. Rudawski, K. S. Jones, R. Gwilliam
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1066, 205–208 (2008)
https://doi.org/10.1063/1.3033593
Published: November 2008
View article titled, An Atomistic Model of Stressed Si Solid‐Phase Epitaxy
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