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Journal Articles

Acceptor state anchoring in gallium nitride

D. Cameron, K. P. O'Donnell, P. R. Edwards, M. Peres, K. Lorenz, M. J. Kappers, M. Boćkowski

Appl. Phys. Lett. 116, 102105 (2020)

https://doi.org/10.1063/1.5142168

Published: March 2020

View articletitled, Acceptor state anchoring in gallium nitride

Journal Articles

Extended X-ray absorption fine structure study of the Er bonding in AlNO:Er_x films with x ≤ 3.6%

M. Katsikini, V. Kachkanov, P. Boulet, P. R. Edwards, K. P. O'Donnell, V. Brien

J. Appl. Phys. 124, 085705 (2018)

https://doi.org/10.1063/1.5036614

Published: August 2018

View articletitled, Extended X-ray absorption fine structure study of the Er bonding in AlNO:Erx films with x ≤ 3.6%

Includes: Supplementary data

Journal Articles

Luminescence of Eu³⁺ in GaN(Mg, Eu): Transitions from the ⁵D₁ level

A. K. Singh, K. P. O'Donnell, P. R. Edwards, D. Cameron, K. Lorenz, M. J. Kappers, M. Boćkowski, M. Yamaga, R. Prakash

Appl. Phys. Lett. 111, 241105 (2017)

https://doi.org/10.1063/1.5001143

Published: December 2017

View articletitled, Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the 5D1 level

Journal Articles

Crystalfield symmetries of luminescent Eu³⁺ centers in GaN: The importance of the ⁵D_{to ⁷F₁ transition}

K. P. O'Donnell, P. R. Edwards, M. Yamaga, K. Lorenz, M. J. Kappers, M. Boćkowski

Appl. Phys. Lett. 108, 022102 (2016)

https://doi.org/10.1063/1.4939631

Published: January 2016

View articletitled, Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the 5D to 7F1 transition

Journal Articles

Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

K. P. O'Donnell, R. W. Martin, P. R. Edwards, K. Lorenz, E. Alves, M. Boćkowski

AIP Conf. Proc. 1566, 63–64 (2013)

https://doi.org/10.1063/1.4848286

Published: December 2013

View articletitled, Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

Journal Articles

InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

V. Kachkanov, I. P. Dolbnya, K. P. O’Donnell, R. W. Martin, P. R. Edwards, S. Pereira

Appl. Phys. Lett. 99, 181909 (2011)

https://doi.org/10.1063/1.3658619

Published: November 2011

View articletitled, InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

Journal Articles

Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

K. Lorenz, E. Alves, I. S. Roqan, K. P. O’Donnell, A. Nishikawa, Y. Fujiwara, M. Boćkowski

Appl. Phys. Lett. 97, 111911 (2010)

https://doi.org/10.1063/1.3489103

Published: September 2010

View articletitled, Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

Journal Articles

Optical and structural properties of Eu-implanted In x Al 1 − x N

I. S. Roqan, K. P. O’Donnell, R. W. Martin, C. Trager-Cowan, V. Matias, A. Vantomme, K. Lorenz, E. Alves, I. M. Watson

J. Appl. Phys. 106, 083508 (2009)

https://doi.org/10.1063/1.3245386

Published: October 2009

View articletitled, Optical and structural properties of Eu-implanted In x Al 1 − x N

Journal Articles

Europium doping of zincblende GaN by ion implantation

K. Lorenz, I. S. Roqan, N. Franco, K. P. O’Donnell, V. Darakchieva, E. Alves, C. Trager-Cowan, R. W. Martin, D. J. As, M. Panfilova

J. Appl. Phys. 105, 113507 (2009)

https://doi.org/10.1063/1.3138806

Published: June 2009

View articletitled, Europium doping of zincblende GaN by ion implantation

Journal Articles

Optical energies of AlInN epilayers

K. Wang, R. W. Martin, D. Amabile, P. R. Edwards, S. Hernandez, E. Nogales, K. P. O’Donnell, K. Lorenz, E. Alves, V. Matias, A. Vantomme, D. Wolverson, I. M. Watson

J. Appl. Phys. 103, 073510 (2008)

https://doi.org/10.1063/1.2898533

Published: April 2008

View articletitled, Optical energies of AlInN epilayers

Journal Articles

Photoluminescence of near-lattice-matched Ga N ∕ Al In N quantum wells grown on free-standing GaN and on sapphire substrates

L. T. Tan, R. W. Martin, K. P. O’Donnell, I. M. Watson, Z. H. Wu, F. A. Ponce

Appl. Phys. Lett. 92, 031907 (2008)

https://doi.org/10.1063/1.2837630

Published: January 2008

View articletitled, Photoluminescence of near-lattice-matched Ga N ∕ Al In N quantum wells grown on free-standing GaN and on sapphire substrates

Journal Articles

Cathodoluminescence of rare earth implanted AlInN

K. Wang, R. W. Martin, E. Nogales, P. R. Edwards, K. P. O’Donnell, K. Lorenz, E. Alves, I. M. Watson

Appl. Phys. Lett. 89, 131912 (2006)

https://doi.org/10.1063/1.2357343

Published: September 2006

View articletitled, Cathodoluminescence of rare earth implanted AlInN

Journal Articles

Photoluminescence and phonon satellites of single In Ga N ∕ Ga N quantum wells with varying GaN cap thickness

L. T. Tan, R. W. Martin, K. P. O’Donnell, I. M. Watson

Appl. Phys. Lett. 89, 101910 (2006)

https://doi.org/10.1063/1.2345246

Published: September 2006

View articletitled, Photoluminescence and phonon satellites of single In Ga N ∕ Ga N quantum wells with varying GaN cap thickness

Journal Articles

Local structure of luminescent InGaN alloys

V. Kachkanov, K. P. O’Donnell, R. W. Martin, J. F. W. Mosselmans, S. Pereira

Appl. Phys. Lett. 89, 101908 (2006)

https://doi.org/10.1063/1.2346172

Published: September 2006

View articletitled, Local structure of luminescent InGaN alloys

Journal Articles

Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing

E. Nogales, R. W. Martin, K. P. O’Donnell, K. Lorenz, E. Alves, S. Ruffenach, O. Briot

Appl. Phys. Lett. 88, 031902 (2006)

https://doi.org/10.1063/1.2162797

Published: January 2006

View articletitled, Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing

Journal Articles

Comment on “Direct evidence of nanocluster-induced luminescence in InGaN epifilms” [Appl. Phys. Lett. 86, 021911 (2005)]

S. Pereira, M. R. Correia, E. Alves, K. P. O’Donnell

Appl. Phys. Lett. 87, 136101 (2005)

https://doi.org/10.1063/1.2058203

Published: September 2005

View articletitled, Comment on “Direct evidence of nanocluster-induced luminescence in InGaN epifilms” [Appl. Phys. Lett. 86, 021911 (2005)]

Journal Articles

Selectively excited photoluminescence from Eu-implanted GaN

K. Wang, R. W. Martin, K. P. O’Donnell, V. Katchkanov, E. Nogales, K. Lorenz, E. Alves, S. Ruffenach, O. Briot

Appl. Phys. Lett. 87, 112107 (2005)

https://doi.org/10.1063/1.2045551

Published: September 2005

View articletitled, Selectively excited photoluminescence from Eu-implanted GaN

Journal Articles

Raman-scattering study of the InGaN alloy over the whole composition range

S. Hernández, R. Cuscó, D. Pastor, L. Artús, K. P. O’Donnell, R. W. Martin, I. M. Watson, Y. Nanishi, E. Calleja

J. Appl. Phys. 98, 013511 (2005)

https://doi.org/10.1063/1.1940139

Published: July 2005

View articletitled, Raman-scattering study of the InGaN alloy over the whole composition range

Journal Articles

High-temperature annealing and optical activation of Eu-implanted GaN

K. Lorenz, U. Wahl, E. Alves, S. Dalmasso, R. W. Martin, K. P. O'Donnell, S. Ruffenach, O. Briot

Appl. Phys. Lett. 85, 2712–2714 (2004)

https://doi.org/10.1063/1.1801686

Published: October 2004

View articletitled, High-temperature annealing and optical activation of Eu-implanted GaN

Journal Articles

Erratum: “Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping” [Appl. Phys. Lett. 80 , 3913 (2002)]

S. Pereira, M. R. Correia, E. Pereira, K. P. O’Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, C. J. Deatcher

Appl. Phys. Lett. 81, 3500 (2002)

https://doi.org/10.1063/1.1519670

Published: October 2002

View articletitled, Erratum: “Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping” [Appl. Phys. Lett. 80 , 3913 (2002)]

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Acceptor state anchoring in gallium nitride

Extended X-ray absorption fine structure study of the Er bonding in AlNO:Er_x films with x ≤ 3.6%

Luminescence of Eu³⁺ in GaN(Mg, Eu): Transitions from the ⁵D₁ level

Crystalfield symmetries of luminescent Eu³⁺ centers in GaN: The importance of the ⁵D_{to ⁷F₁ transition}

Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

Optical and structural properties of Eu-implanted In x Al 1 − x N

Europium doping of zincblende GaN by ion implantation

Optical energies of AlInN epilayers

Photoluminescence of near-lattice-matched Ga N ∕ Al In N quantum wells grown on free-standing GaN and on sapphire substrates

Cathodoluminescence of rare earth implanted AlInN

Photoluminescence and phonon satellites of single In Ga N ∕ Ga N quantum wells with varying GaN cap thickness

Local structure of luminescent InGaN alloys

Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing

Comment on “Direct evidence of nanocluster-induced luminescence in InGaN epifilms” [Appl. Phys. Lett. 86, 021911 (2005)]

Selectively excited photoluminescence from Eu-implanted GaN

Raman-scattering study of the InGaN alloy over the whole composition range

High-temperature annealing and optical activation of Eu-implanted GaN

Erratum: “Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping” [Appl. Phys. Lett. 80 , 3913 (2002)]

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