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K. M. Yu
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Journal Articles

Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

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M. Welna, Ł Janicki, W. M. Linhart, T. Tanaka, K. M. Yu, R. Kudrawiec, W. Walukiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 083106 (2019)
https://doi.org/10.1063/1.5111600
Published: August 2019
View articletitled, Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys
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Journal Articles

ZnO1−xTex highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure

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M. Ting, K. M. Yu, M. Jaquez, I. D. Sharp, Yifan Ye, N. Segercrantz, R. Greif, S. S. Mao, Chao Ping Liu, W. Walukiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 155702 (2019)
https://doi.org/10.1063/1.5088852
Published: April 2019
View articletitled, ZnO1−xTex highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure
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Journal Articles

Undoped p-type GaN1–xSbx alloys: Effects of annealing

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N. Segercrantz, Y. Baumgartner, M. Ting, K. M. Yu, S. S. Mao, W. L. Sarney, S. P. Svensson, W. Walukiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 252102 (2016)
https://doi.org/10.1063/1.4972559
Published: December 2016
View articletitled, Undoped p-type GaN1–xSbx alloys: Effects of annealing
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Journal Articles

Band structure of germanium carbides for direct bandgap silicon photonics

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C. A. Stephenson, W. A. O'Brien, M. W. Penninger, W. F. Schneider, M. Gillett-Kunnath, J. Zajicek, K. M. Yu, R. Kudrawiec, R. A. Stillwell, M. A. Wistey
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 053102 (2016)
https://doi.org/10.1063/1.4959255
Published: August 2016
View articletitled, Band structure of germanium carbides for direct bandgap silicon photonics
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Journal Articles

Growth and characterization of ZnO1−xSx highly mismatched alloys over the entire composition

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M. Jaquez, K. M. Yu, M. Ting, M. Hettick, J. F. Sánchez-Royo, M. Wełna, A. Javey, O. D. Dubon, W. Walukiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 215702 (2015)
https://doi.org/10.1063/1.4936551
Published: December 2015
View articletitled, Growth and characterization of ZnO1−xSx highly mismatched alloys over the entire composition
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Journal Articles

Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

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N. Segercrantz, K. M. Yu, M. Ting, W. L. Sarney, S. P. Svensson, S. V. Novikov, C. T. Foxon, W. Walukiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 142104 (2015)
https://doi.org/10.1063/1.4932592
Published: October 2015
View articletitled, Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range
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Journal Articles

Effects of the d-donor level of vanadium on the properties of Zn1−xVxO films

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E. García-Hemme, K. M. Yu, P. Wahnon, G. González-Díaz, W. Walukiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 182101 (2015)
https://doi.org/10.1063/1.4919791
Published: May 2015
View articletitled, Effects of the d-donor level of vanadium on the properties of Zn1−xVxO films
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Journal Articles

Temperature evolution of carrier dynamics in GaNxPyAs1−y−xalloys

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M. Baranowski, R. Kudrawiec, A. V. Luce, M. Latkowska, K. M. Yu, Y. J. Kuang (邝彦瑾), J. Misiewicz, C. W. Tu, W. Walukiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 175702 (2015)
https://doi.org/10.1063/1.4919751
Published: May 2015
View articletitled, Temperature evolution of carrier dynamics in GaNxPyAs1−y−xalloys
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Journal Articles

Electronic band structure of ZnO-rich highly mismatched ZnO1−xTex alloys

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M. Ting, R. dos Reis, M. Jaquez, O. D. Dubon, S. S. Mao, K. M. Yu, W. Walukiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 092101 (2015)
https://doi.org/10.1063/1.4913840
Published: March 2015
View articletitled, Electronic band structure of ZnO-rich highly mismatched ZnO1−xTex alloys
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Journal Articles

Bi-induced band gap reduction in epitaxial InSbBi alloys

Open Access
M. K. Rajpalke, W. M. Linhart, K. M. Yu, M. Birkett, J. Alaria, J. J. Bomphrey, S. Sallis, L. F. J. Piper, T. S. Jones, M. J. Ashwin, T. D. Veal
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 212101 (2014)
https://doi.org/10.1063/1.4902442
Published: November 2014
View articletitled, Bi-induced band gap reduction in epitaxial InSbBi alloys
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Journal Articles

Growth and characterization of highly mismatched GaN1−xSbx alloys

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K. M. Yu, S. V. Novikov, Min Ting, W. L. Sarney, S. P. Svensson, M. Shaw, R. W. Martin, W. Walukiewicz, C. T. Foxon
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 123704 (2014)
https://doi.org/10.1063/1.4896364
Published: September 2014
View articletitled, Growth and characterization of highly mismatched GaN1−xSbx alloys
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Journal Articles

High Bi content GaSbBi alloys

Open Access
M. K. Rajpalke, W. M. Linhart, M. Birkett, K. M. Yu, J. Alaria, J. Kopaczek, R. Kudrawiec, T. S. Jones, M. J. Ashwin, T. D. Veal
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 043511 (2014)
https://doi.org/10.1063/1.4891217
Published: July 2014
View articletitled, High Bi content GaSbBi alloys
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Journal Articles

Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

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J. Luo, L. H. Li, H. T. Liu, K. M. Yu, Y. Xu, X. J. Zuo, P. Z. Zhu, Y. F. Ma, Ricky K. Y. Fu, Paul K. Chu
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 85, 063506 (2014)
https://doi.org/10.1063/1.4875982
Published: June 2014
View articletitled, Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon
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Journal Articles

Composition determination of quaternary GaAsPN layers from single X-ray diffraction measurement of quasi-forbidden (002) reflection

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J.-M. Tilli, H. Jussila, K. M. Yu, T. Huhtio, M. Sopanen
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 203102 (2014)
https://doi.org/10.1063/1.4878939
Published: May 2014
View articletitled, Composition determination of quaternary GaAsPN layers from single X-ray diffraction measurement of quasi-forbidden (002) reflection
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Journal Articles

Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance

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J. Kopaczek, R. Kudrawiec, W. M. Linhart, M. K. Rajpalke, K. M. Yu, T. S. Jones, M. J. Ashwin, J. Misiewicz, T. D. Veal
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 261907 (2013)
https://doi.org/10.1063/1.4858967
Published: December 2013
View articletitled, Temperature dependence of the band gap of GaSb1−xBix alloys with 0 &lt; x ≤ 0.042 determined by photoreflectance
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Journal Articles

Growth and properties of GaSbBi alloys

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M. K. Rajpalke, W. M. Linhart, M. Birkett, K. M. Yu, D. O. Scanlon, J. Buckeridge, T. S. Jones, M. J. Ashwin, T. D. Veal
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 142106 (2013)
https://doi.org/10.1063/1.4824077
Published: October 2013
View articletitled, Growth and properties of GaSbBi alloys
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Journal Articles

Material properties of Cd1− x Mg x O alloys synthesized by radio frequency sputtering

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Guibin Chen, K. M. Yu, L. A. Reichertz, W. Walukiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 041902 (2013)
https://doi.org/10.1063/1.4816326
Published: July 2013
View articletitled, Material properties of Cd1− x Mg x O alloys synthesized by radio frequency sputtering
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Journal Articles

Local structure of amorphous GaN1−xAsx semiconductor alloys across the composition range

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A. X. Levander, K. M. Yu, S. V. Novikov, Z. Liliental-Weber, C. T. Foxon, O. D. Dubon, J. Wu, W. Walukiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 243505 (2013)
https://doi.org/10.1063/1.4812277
Published: June 2013
View articletitled, Local structure of amorphous GaN1−xAsx semiconductor alloys across the composition range
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Journal Articles

Crystal structure and properties of CdxZn1−xO alloys across the full composition range

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D. M. Detert, S. H. M. Lim, K. Tom, A. V. Luce, A. Anders, O. D. Dubon, K. M. Yu, W. Walukiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 232103 (2013)
https://doi.org/10.1063/1.4809950
Published: June 2013
View articletitled, Crystal structure and properties of CdxZn1−xO alloys across the full composition range
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Journal Articles

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

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Y. J. Kuang (邝彦瑾), K. M. Yu, R. Kudrawiec, A. V. Luce, M. Ting, W. Walukiewicz, C. W. Tu
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 112105 (2013)
https://doi.org/10.1063/1.4795782
Published: March 2013
View articletitled, GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy
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