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Journal Articles

Enhancing the luminescence yield of Cr3+ in β -Ga2O3 by proton irradiation

M. Peres, D. M. Esteves, B. M. S. Teixeira, J. Zanoni, L. C. Alves, E. Alves, L. F. Santos, X. Biquard, Z. Jia, W. Mu, J. Rodrigues, N. A. Sobolev, M. R. Correia, T. Monteiro, N. Ben Sedrine, K. Lorenz
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 261904 (2022)
https://doi.org/10.1063/5.0089541
Published: June 2022
View articletitled, Enhancing the luminescence yield of Cr3+ in β -Ga2O3 by proton irradiation
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Includes: Supplementary data
Journal Articles

Self-powered proton detectors based on GaN core–shell p–n microwires

D. Verheij, M. Peres, S. Cardoso, L. C. Alves, E. Alves, C. Durand, J. Eymery, J. Fernandes, K. Lorenz
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 193501 (2021)
https://doi.org/10.1063/5.0045050
Published: May 2021
View articletitled, Self-powered proton detectors based on GaN core–shell p–n microwires
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Includes: Supplementary data
Journal Articles

XANES/EXAFS study of the Lu and Y incorporation in the single crystal Tb3Sc2Al3O12 Faraday rotator

X. Biquard, E. G. Víllora, K. Shimamura, K. Lorenz
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 115106 (2020)
https://doi.org/10.1063/1.5145188
Published: March 2020
View articletitled, XANES/EXAFS study of the Lu and Y incorporation in the single crystal Tb3Sc2Al3O12 Faraday rotator
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Journal Articles

Acceptor state anchoring in gallium nitride

D. Cameron, K. P. O'Donnell, P. R. Edwards, M. Peres, K. Lorenz, M. J. Kappers, M. Boćkowski
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 102105 (2020)
https://doi.org/10.1063/1.5142168
Published: March 2020
View articletitled, Acceptor state anchoring in gallium nitride
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Journal Articles

Size control of GaN nanocrystals formed by ion implantation in thermally grown silicon dioxide

K. Filintoglou, F. Pinakidou, J. Arvanitidis, D. Christofilos, E. C. Paloura, S. Ves, P. Kutza, Ph. Lorenz, P. Gerlach, E. Wendler, A. Undisz, M. Rettenmayr, O. Milchanin, F. F. Komarov, K. Lorenz, M. Katsikini
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 034302 (2020)
https://doi.org/10.1063/1.5132604
Published: January 2020
View articletitled, Size control of GaN nanocrystals formed by ion implantation in thermally grown silicon dioxide
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Journal Articles

Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications

J. Cardoso, N. Ben Sedrine, A. Alves, M. A. Martins, M. Belloeil, B. Daudin, D. Nd. Faye, E. Alves, K. Lorenz, A. J. Neves, M. R. Correia, T. Monteiro
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 201905 (2018)
https://doi.org/10.1063/1.5048772
Published: November 2018
View articletitled, Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications
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Includes: Supplementary data
Journal Articles

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

I. A. Ajia, Y. Yamashita, K. Lorenz, M. M. Muhammed, L. Spasevski, D. Almalawi, J. Xu, K. Iizuka, Y. Morishima, D. H. Anjum, N. Wei, R. W. Martin, A. Kuramata, I. S. Roqan
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 082102 (2018)
https://doi.org/10.1063/1.5025178
Published: August 2018
View articletitled, GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices
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Includes: Supplementary data
Journal Articles

Spatially resolved optical activation of Eu ions by laser irradiation in implanted hexagonal MoO3 microrods

P. Almodóvar, C. Díaz-Guerra, J. Ramírez-Castellanos, J. M. González-Calbet, M. Peres, K. Lorenz
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 031902 (2018)
https://doi.org/10.1063/1.5039559
Published: July 2018
View articletitled, Spatially resolved optical activation of Eu ions by laser irradiation in implanted hexagonal MoO3 microrods
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Includes: Supplementary data
Journal Articles

Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the 5D1 level

A. K. Singh, K. P. O'Donnell, P. R. Edwards, D. Cameron, K. Lorenz, M. J. Kappers, M. Boćkowski, M. Yamaga, R. Prakash
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 241105 (2017)
https://doi.org/10.1063/1.5001143
Published: December 2017
View articletitled, Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the 5D1 level
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Journal Articles

Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1−xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect

S. Schöche, T. Hofmann, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, P. Kühne, K. Lorenz, M. Schubert, V. Darakchieva
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 205701 (2017)
https://doi.org/10.1063/1.4983765
Published: May 2017
View articletitled, Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1−xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect
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Journal Articles

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

M. Fialho, S. Magalhães, M. P. Chauvat, P. Ruterana, K. Lorenz, E. Alves
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 165703 (2016)
https://doi.org/10.1063/1.4966120
Published: October 2016
View articletitled, Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium
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Journal Articles

Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers

J. Rodrigues, M. Fialho, T. C. Esteves, N. F. Santos, N. Ben Sedrine, L. Rino, A. J. Neves, K. Lorenz, E. Alves, T. Monteiro
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 081701 (2016)
https://doi.org/10.1063/1.4961931
Published: August 2016
View articletitled, Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers
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Journal Articles

Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

T. H. Flemban, M. C. Sequeira, Z. Zhang, S. Venkatesh, E. Alves, K. Lorenz, I. S. Roqan
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 065301 (2016)
https://doi.org/10.1063/1.4941434
Published: February 2016
View articletitled, Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films
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Journal Articles

Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the 5D to 7F1 transition

K. P. O'Donnell, P. R. Edwards, M. Yamaga, K. Lorenz, M. J. Kappers, M. Boćkowski
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 022102 (2016)
https://doi.org/10.1063/1.4939631
Published: January 2016
View articletitled, Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the 5D to 7F1 transition
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Journal Articles

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero, Y. Wang, M.-P. Chauvat, P. Ruterana, S. Pouget, K. Lorenz, E. Alves, E. Monroy
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 233504 (2014)
https://doi.org/10.1063/1.4903944
Published: December 2014
View articletitled, High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
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Journal Articles

High optical and structural quality of GaN epilayers grown on ( 2 ¯ 01 ) β-Ga2O3

M. M. Muhammed, M. Peres, Y. Yamashita, Y. Morishima, S. Sato, N. Franco, K. Lorenz, A. Kuramata, I. S. Roqan
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 042112 (2014)
https://doi.org/10.1063/1.4891761
Published: July 2014
View articletitled, High optical and structural quality of GaN epilayers grown on ( 2 ¯ 01 ) β-Ga2O3
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Journal Articles

Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

K. P. O'Donnell, R. W. Martin, P. R. Edwards, K. Lorenz, E. Alves, M. Boćkowski
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1566, 63–64 (2013)
https://doi.org/10.1063/1.4848286
Published: December 2013
View articletitled, Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN
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Journal Articles

Optical doping of Al x Ga 1− x N compounds by ion implantation of Tm ions

M. Fialho, K. Lorenz, S. Magalhães, A. Redondo-Cubero, J. Rodrigues, N. F. Santos, T. Monteiro, E. Alves
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1496, 63–66 (2012)
https://doi.org/10.1063/1.4766490
Published: November 2012
View articletitled, Optical doping of Al x Ga 1− x N compounds by ion implantation of Tm ions
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Journal Articles

Mechanisms of damage formation in Eu-implanted AlN

S. Leclerc, B. Lacroix, A. Declémy, K. Lorenz, P. Ruterana
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 073525 (2012)
https://doi.org/10.1063/1.4758311
Published: October 2012
View articletitled, Mechanisms of damage formation in Eu-implanted AlN
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Journal Articles

Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations

V. Darakchieva, K. Lorenz, M.-Y. Xie, E. Alves, C. L. Hsiao, L. C. Chen, L. W. Tu, W. J. Schaff, T. Yamaguchi, Y. Nanishi
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 063535 (2011)
https://doi.org/10.1063/1.3642969
Published: September 2011
View articletitled, Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations
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