1-20 of 85
K. L. Pey
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Destructive dielectric breakdown of 2D muscovite mica

Open Access
A. Maruvada, S. J. O'Shea, J. Deng, K. Shubhakar, N. Raghavan, K. L. Pey
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 112904 (2024)
https://doi.org/10.1063/5.0222048
Published: September 2024
View articletitled, Destructive dielectric breakdown of 2D muscovite mica
Open the PDF for Destructive dielectric breakdown of 2D muscovite mica in another window
Journal Articles

The interplay between drift and electrical measurement in conduction atomic force microscopy

Available to Purchase
A. Ranjan, K. L. Pey, S. J. O’Shea
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 90, 073701 (2019)
https://doi.org/10.1063/1.5095647
Published: July 2019
View articletitled, The interplay between drift and electrical measurement in conduction atomic force microscopy
Open the PDF for The interplay between drift and electrical measurement in conduction atomic force microscopy in another window
Journal Articles

Random telegraph noise in 2D hexagonal boron nitride dielectric films

Available to Purchase
A. Ranjan, F. M. Puglisi, N. Raghavan, S. J. O'Shea, K. Shubhakar, P. Pavan, A. Padovani, L. Larcher, K. L. Pey
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 133505 (2018)
https://doi.org/10.1063/1.5022040
Published: March 2018
View articletitled, Random telegraph noise in 2D hexagonal boron nitride dielectric films
Open the PDF for Random telegraph noise in 2D hexagonal boron nitride dielectric films in another window
Journal Articles

Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations

Available to Purchase
R. Thamankar, F. M. Puglisi, A. Ranjan, N. Raghavan, K. Shubhakar, J. Molina, L. Larcher, A. Padovani, P. Pavan, S. J. O'Shea, K. L. Pey
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 024301 (2017)
https://doi.org/10.1063/1.4991002
Published: July 2017
View articletitled, Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations
Open the PDF for Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations in another window
Journal Articles

Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy

Available to Purchase
R. Thamankar, N. Raghavan, J. Molina, F. M. Puglisi, S. J. O'Shea, K. Shubhakar, L. Larcher, P. Pavan, A. Padovani, K. L. Pey
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 084304 (2016)
https://doi.org/10.1063/1.4941697
Published: February 2016
View articletitled, Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy
Open the PDF for Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy in another window
Journal Articles

Charge transport in lightly reduced graphene oxide: A transport energy perspective

Available to Purchase
R. S. Kajen, N. Chandrasekhar, K. L. Pey, C. Vijila, M. Jaiswal, S. Saravanan, Andrew M. H. Ng, C. P. Wong, K. P. Loh
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 063710 (2013)
https://doi.org/10.1063/1.4792042
Published: February 2013
View articletitled, Charge transport in lightly reduced graphene oxide: A transport energy perspective
Open the PDF for Charge transport in lightly reduced graphene oxide: A transport energy perspective in another window
Journal Articles

Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack

Available to Purchase
Y. N. Chen, K. E. J. Goh, X. Wu, Z. Z. Lwin, P. K. Singh, S. Mahapatra, K. L. Pey
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 104503 (2012)
https://doi.org/10.1063/1.4764873
Published: November 2012
View articletitled, Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack
Open the PDF for Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack in another window
Journal Articles

Study of charge distribution and charge loss in dual-layer metal-nanocrystal-embedded high-κ/SiO2 gate stack

Available to Purchase
Z. Z. Lwin, K. L. Pey, Q. Zhang, M. Bosman, Q. Liu, C. L. Gan, P. K. Singh, S. Mahapatra
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 193109 (2012)
https://doi.org/10.1063/1.4712565
Published: May 2012
View articletitled, Study of charge distribution and charge loss in dual-layer metal-nanocrystal-embedded high-κ/SiO2 gate stack
Open the PDF for Study of charge distribution and charge loss in dual-layer metal-nanocrystal-embedded high-κ/SiO2 gate stack in another window
Journal Articles

The electronic barrier height of silicon native oxides at different oxidation stages

Available to Purchase
H. L. Qin, K. E. J. Goh, C. Troadec, M. Bosman, K. L. Pey
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 054111 (2012)
https://doi.org/10.1063/1.3693556
Published: March 2012
View articletitled, The electronic barrier height of silicon native oxides at different oxidation stages
Open the PDF for The electronic barrier height of silicon native oxides at different oxidation stages in another window
Journal Articles

Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

Available to Purchase
W. H. Liu, K. L. Pey, N. Raghavan, X. Wu, M. Bosman
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 024101 (2012)
https://doi.org/10.1063/1.3676255
Published: January 2012
View articletitled, Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications
Open the PDF for Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications in another window
Journal Articles

Subthreshold characteristics of ballistic electron emission spectra

Available to Purchase
H. L. Qin, K. E. J. Goh, M. Bosman, K. L. Pey, C. Troadec
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 013701 (2012)
https://doi.org/10.1063/1.3672698
Published: January 2012
View articletitled, Subthreshold characteristics of ballistic electron emission spectra
Open the PDF for Subthreshold characteristics of ballistic electron emission spectra in another window
Journal Articles

Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal

Available to Purchase
W. H. Liu, K. L. Pey, X. Wu, N. Raghavan, A. Padovani, L. Larcher, L. Vandelli, M. Bosman, T. Kauerauf
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 232909 (2011)
https://doi.org/10.1063/1.3669525
Published: December 2011
View articletitled, Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal
Open the PDF for Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal in another window
Journal Articles

Localized charge trapping and lateral charge diffusion in metal nanocrystal-embedded High-κ/SiO2 gate stack

Available to Purchase
Z. Z. Lwin, K. L. Pey, C. Liu, Q. Liu, Q. Zhang, Y. N. Chen, P. K. Singh, S. Mahapatra
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 222102 (2011)
https://doi.org/10.1063/1.3664220
Published: November 2011
View articletitled, Localized charge trapping and lateral charge diffusion in metal nanocrystal-embedded High-κ/SiO2 gate stack
Open the PDF for Localized charge trapping and lateral charge diffusion in metal nanocrystal-embedded High-κ/SiO2 gate stack in another window
Journal Articles

Stress migration risk on electromigration reliability in advanced narrow line copper interconnects

Available to Purchase
A. Heryanto, K. L. Pey, Y. K. Lim, N. Raghavan, W. Liu, J. Wei, C. L. Gan, J. B. Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 083702 (2011)
https://doi.org/10.1063/1.3651385
Published: October 2011
View articletitled, Stress migration risk on electromigration reliability in advanced narrow line copper interconnects
Open the PDF for Stress migration risk on electromigration reliability in advanced narrow line copper interconnects in another window
Journal Articles

Chemical insight into origin of forming-free resistive random-access memory devices

Available to Purchase
X. Wu, Z. Fang, K. Li, M. Bosman, N. Raghavan, X. Li, H. Y. Yu, N. Singh, G. Q. Lo, X. X. Zhang, K. L. Pey
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 133504 (2011)
https://doi.org/10.1063/1.3645623
Published: September 2011
View articletitled, Chemical insight into origin of forming-free resistive random-access memory devices
Open the PDF for Chemical insight into origin of forming-free resistive random-access memory devices in another window
Journal Articles

Electronic properties of ultrathin high-κ dielectrics studied by ballistic electron emission microscopy

Available to Purchase
H. L. Qin, C. Troadec, K. E. J. Goh, K. Kakushima, H. Iwai, M. Bosman, K. L. Pey
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 052201 (2011)
https://doi.org/10.1116/1.3622296
Published: August 2011
View articletitled, Electronic properties of ultrathin high-κ dielectrics studied by ballistic electron emission microscopy
Open the PDF for Electronic properties of ultrathin high-κ dielectrics studied by ballistic electron emission microscopy in another window
Journal Articles

Comparison between chemical vapor deposited and physical vapor deposited WSi 2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

Available to Purchase
B. S. Ong, K. L. Pey, C. Y. Ong, C. S. Tan, D. A. Antoniadis, E. A. Fitzgerald
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 182102 (2011)
https://doi.org/10.1063/1.3584024
Published: May 2011
View articletitled, Comparison between chemical vapor deposited and physical vapor deposited WSi 2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors
Open the PDF for Comparison between chemical vapor deposited and physical vapor deposited WSi 2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors in another window
Journal Articles

Study of automatic recovery on the metal nanocrystal-based Al 2 O 3 / SiO 2 gate stack

Available to Purchase
Y. N. Chen, K. L. Pey, K. E. J. Goh, Z. Z. Lwin, P. Singh, S. Mahapatra
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 083504 (2011)
https://doi.org/10.1063/1.3556641
Published: February 2011
View articletitled, Study of automatic recovery on the metal nanocrystal-based Al 2 O 3 / SiO 2 gate stack
Open the PDF for Study of automatic recovery on the metal nanocrystal-based Al 2 O 3 / SiO 2 gate stack in another window
Journal Articles

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

Available to Purchase
K. Shubhakar, K. L. Pey, S. S. Kushvaha, S. J. O’Shea, N. Raghavan, M. Bosman, M. Kouda, K. Kakushima, H. Iwai
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 072902 (2011)
https://doi.org/10.1063/1.3553190
Published: February 2011
View articletitled, Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy
Open the PDF for Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy in another window
Journal Articles

The effect of stress migration on electromigration in dual damascene copper interconnects

Available to Purchase
A. Heryanto, K. L. Pey, Y. K. Lim, W. Liu, N. Raghavan, J. Wei, C. L. Gan, M. K. Lim, J. B. Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 013716 (2011)
https://doi.org/10.1063/1.3531393
Published: January 2011
View articletitled, The effect of stress migration on electromigration in dual damascene copper interconnects
Open the PDF for The effect of stress migration on electromigration in dual damascene copper interconnects in another window