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Journal Articles

Nitrogen incorporation and optical studies of Ga As Sb N ∕ Ga As single quantum well heterostructures

Kalyan Nunna, S. Iyer, L. Wu, J. Li, S. Bharatan, X. Wei, R. T. Senger, K. K. Bajaj
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 053106 (2007)
https://doi.org/10.1063/1.2777448
Published: September 2007
View articletitled, Nitrogen incorporation and optical studies of Ga As Sb N ∕ Ga As single quantum well heterostructures
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Journal Articles

Optical studies of molecular beam epitaxy grown Ga As Sb N ∕ Ga As single quantum well structures

Kalyan Nunna, S. Iyer, L. Wu, S. Bharatan, Jia Li, K. K. Bajaj, X. Wei, R. T. Senger
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1113–1116 (2007)
https://doi.org/10.1116/1.2720860
Published: May 2007
View articletitled, Optical studies of molecular beam epitaxy grown Ga As Sb N ∕ Ga As single quantum well structures
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Journal Articles

Monte Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures

T. Makino, K. Saito, A. Ohtomo, M. Kawasaki, R. T. Senger, K. K. Bajaj
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 066108 (2006)
https://doi.org/10.1063/1.2181431
Published: March 2006
View articletitled, Monte Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures
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Journal Articles

Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys

A. N. Westmeyer, S. Mahajan, K. K. Bajaj, J. Y. Lin, H. X. Jiang, D. D. Koleske, R. T. Senger
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 013705 (2006)
https://doi.org/10.1063/1.2158492
Published: January 2006
View articletitled, Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys
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Journal Articles

Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells

J. Li, S. Iyer, S. Bharatan, L. Wu, K. Nunna, W. Collis, K. K. Bajaj, K. Matney
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 013703 (2005)
https://doi.org/10.1063/1.1931032
Published: July 2005
View articletitled, Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells
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Journal Articles

Magnetoluminescence properties of GaAsSbN/GaAs quantum well structures

R. T. Senger, K. K. Bajaj, E. D. Jones, N. A. Modine, K. E. Waldrip, F. Jalali, J. F. Klem, G. M. Peake, X. Wei, S. W. Tozer
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 5425–5427 (2003)
https://doi.org/10.1063/1.1637439
Published: December 2003
View articletitled, Magnetoluminescence properties of GaAsSbN/GaAs quantum well structures
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Journal Articles

Photoluminescence excitonic linewidth in GaAsN alloys

R. T. Senger, K. K. Bajaj
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 7505–7508 (2003)
https://doi.org/10.1063/1.1628405
Published: December 2003
View articletitled, Photoluminescence excitonic linewidth in GaAsN alloys
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Journal Articles

Magneto-optical properties of GaAsSb/GaAs quantum wells

R. T. Senger, K. K. Bajaj, E. D. Jones, N. A. Modine, K. E. Waldrip, F. Jalali, J. F. Klem, G. M. Peake, X. Wei, S. W. Tozer
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 2614–2616 (2003)
https://doi.org/10.1063/1.1615680
Published: September 2003
View articletitled, Magneto-optical properties of GaAsSb/GaAs quantum wells
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Journal Articles

Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations

Giuliano Coli, K. K. Bajaj, J. Li, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 80, 2907–2909 (2002)
https://doi.org/10.1063/1.1471932
Published: April 2002
View articletitled, Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations
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Journal Articles

Excitonic transitions in ZnO/MgZnO quantum well heterostructures

Giuliano Coli, K. K. Bajaj
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 2861–2863 (2001)
https://doi.org/10.1063/1.1370116
Published: May 2001
View articletitled, Excitonic transitions in ZnO/MgZnO quantum well heterostructures
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Journal Articles

Linewidths of excitonic luminescence transitions in AlGaN alloys

Giuliano Coli, K. K. Bajaj, J. Li, J. Y. Lin, H. X. Jiang
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 1829–1831 (2001)
https://doi.org/10.1063/1.1357212
Published: March 2001
View articletitled, Linewidths of excitonic luminescence transitions in AlGaN alloys
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Journal Articles

Magnetoluminescence studies in InGaP alloys

J. Zeman, G. Martinez, K. K. Bajaj, I. Krivorotov, K. Uchida
Journal: Applied Physics Letters
Appl. Phys. Lett. 77, 4335–4337 (2000)
https://doi.org/10.1063/1.1334648
Published: December 2000
View articletitled, Magnetoluminescence studies in InGaP alloys
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Journal Articles

Photoreflectance studies of Te-doped GaSb at the E +Δ transition

S. Iyer, S. Mulugeta, W. Collis, S. Venkatraman, K. K. Bajaj, G. Coli
Journal: Journal of Applied Physics
J. Appl. Phys. 87, 2336–2339 (2000)
https://doi.org/10.1063/1.372184
Published: March 2000
View articletitled, Photoreflectance studies of Te-doped GaSb at the E +Δ transition
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Journal Articles

Comment on “Optical investigations of AlGaN on GaN epitaxial films” [Appl. Phys. Lett. 74 , 2456 (1999)]

K. K. Bajaj, G. Coli
Journal: Applied Physics Letters
Appl. Phys. Lett. 75, 2334–2335 (1999)
https://doi.org/10.1063/1.125007
Published: October 1999
View articletitled, Comment on “Optical investigations of AlGaN on GaN epitaxial films” [Appl. Phys. Lett. 74 , 2456 (1999)]
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Journal Articles

Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)

D. G. Chtchekine, L. P. Fu, G. D. Gilliland, Y. Chen, S. E. Ralph, K. K. Bajaj, Y. Bu, M. C. Lin, F. T. Bacalzo, S. R. Stock
Journal: Journal of Applied Physics
J. Appl. Phys. 81, 2197–2207 (1997)
https://doi.org/10.1063/1.364253
Published: March 1997
View articletitled, Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)
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Journal Articles

Erratum: ‘‘Low temperature photoluminescence of Te‐doped GaSb grown by liquid phase electroepitaxy’’ [J. Appl. Phys. 77 , 5902 (1995)]

S. Iyer, L. Small, S. M. Hegde, K. K. Bajaj, A. Abul‐Fadl
Journal: Journal of Applied Physics
J. Appl. Phys. 79, 1185 (1996)
https://doi.org/10.1063/1.362713
Published: January 1996
View articletitled, Erratum: ‘‘Low temperature photoluminescence of Te‐doped GaSb grown by liquid phase electroepitaxy’’ [J. Appl. Phys. 77 , 5902 (1995)]
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Journal Articles

Optical studies of heterointerfacial growth interrupts in type‐II GaAs/AlAs superlattices by time resolved photoluminescence imaging

T. Chang, L. P. Fu, F. T. Bacalzo, G. D. Gilliland, D. J. Wolford, K. K. Bajaj, A. Antonelli, R. Chen, J. Klem, M. Hafich
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 13, 1760–1765 (1995)
https://doi.org/10.1116/1.587809
Published: July 1995
View articletitled, Optical studies of heterointerfacial growth interrupts in type‐II GaAs/AlAs superlattices by time resolved photoluminescence imaging
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Journal Articles

Low‐temperature photoluminescence of Te‐doped GaSb grown by liquid phase electroepitaxy

S. Iyer, L. Small, S. M. Hegde, K. K. Bajaj, A. Abul‐Fadl
Journal: Journal of Applied Physics
J. Appl. Phys. 77, 5902–5909 (1995)
https://doi.org/10.1063/1.359170
Published: June 1995
View articletitled, Low‐temperature photoluminescence of Te‐doped GaSb grown by liquid phase electroepitaxy
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Journal Articles

Exciton binding energy in a quantum wire in the presence of a magnetic field

Gang Li, Spiros V. Branis, K. K. Bajaj
Journal: Journal of Applied Physics
J. Appl. Phys. 77, 1097–1104 (1995)
https://doi.org/10.1063/1.359582
Published: February 1995
View articletitled, Exciton binding energy in a quantum wire in the presence of a magnetic field
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Journal Articles

Photoluminescence study of liquid phase electroepitaxially grown GaInAsSb on (100)GaSb

S. Iyer, S. Hegde, K. K. Bajaj, Ali Abul‐Fadl, W. Mitchel
Journal: Journal of Applied Physics
J. Appl. Phys. 73, 3958–3961 (1993)
https://doi.org/10.1063/1.352859
Published: April 1993
View articletitled, Photoluminescence study of liquid phase electroepitaxially grown GaInAsSb on (100)GaSb
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