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Journal Articles

Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range

L. Hahn, F. Fuchs, L. Kirste, R. Driad, F. Rutz, T. Passow, K. Köhler, R. Rehm, O. Ambacher
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 151102 (2018)
https://doi.org/10.1063/1.5022660
Published: April 2018
View article titled, Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range
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Journal Articles

Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures: Frequency dependence of capacitance and conductance

K. Köhler, W. Pletschen, B. Godejohann, S. Müller, H. P. Menner, O. Ambacher
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 205702 (2015)
https://doi.org/10.1063/1.4936125
Published: November 2015
View article titled, Admittance–voltage profiling of Al<sub>x</sub>Ga<sub>1−x</sub>N/GaN heterostructures: Frequency dependence of capacitance and conductance
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Journal Articles

Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

J. Däubler, T. Passow, R. Aidam, K. Köhler, L. Kirste, M. Kunzer, J. Wagner
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 111111 (2014)
https://doi.org/10.1063/1.4895067
Published: September 2014
View article titled, Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter
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Journal Articles

Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN

J. Binder, K. P. Korona, A. Wysmołek, M. Kamińska, K. Köhler, L. Kirste, O. Ambacher, M. Zając, R. Dwiliński
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 223504 (2013)
https://doi.org/10.1063/1.4845715
Published: December 2013
View article titled, Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN
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Journal Articles

Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1−xN

K. Köhler, R. Gutt, J. Wiegert, L. Kirste
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 073514 (2013)
https://doi.org/10.1063/1.4792662
Published: February 2013
View article titled, Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and Al<sub>x</sub>Ga<sub>1−x</sub>N
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Journal Articles

Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures

P. Waltereit, W. Bronner, M. Musser, F. van Raay, M. Dammann, M. Cäsar, S. Müller, L. Kirste, K. Köhler, R. Quay, M. Mikulla, O. Ambacher
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 053718 (2012)
https://doi.org/10.1063/1.4752257
Published: September 2012
View article titled, Influence of AlGaN barrier thickness on electrical and device properties in Al<sub>0.14</sub>Ga<sub>0.86</sub>N/GaN high electron mobility transistor structures
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Journal Articles

Growth mechanism and electronic properties of epitaxial In2O3 films on sapphire

Ch. Y. Wang, L. Kirste, F. M. Morales, J. M. Mánuel, C. C. Röhlig, K. Köhler, V. Cimalla, R. García, O. Ambacher
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 093712 (2011)
https://doi.org/10.1063/1.3658217
Published: November 2011
View article titled, Growth mechanism and electronic properties of epitaxial In<sub>2</sub>O<sub>3</sub> films on sapphire
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Journal Articles

Comprehensive surface analysis of GaN-capped AlGaN/GaN high electron mobility transistors: Influence of growth method

R. Gutt, M. Himmerlich, M. Fenske, S. Müller, T. Lim, L. Kirste, P. Waltereit, K. Köhler, S. Krischok, T. Fladung
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 083527 (2011)
https://doi.org/10.1063/1.3653825
Published: October 2011
View article titled, Comprehensive surface analysis of GaN-capped AlGaN/GaN high electron mobility transistors: Influence of growth method
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Journal Articles

Photoluminescence dynamics in GaAs/AlGaAs quantum wells under pulsed intersubband excitation

S. Zybell, H. Schneider, S. Winnerl, M. Wagner, K. Köhler, M. Helm
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 041103 (2011)
https://doi.org/10.1063/1.3615298
Published: July 2011
View article titled, Photoluminescence dynamics in GaAs/AlGaAs quantum wells under pulsed intersubband excitation
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Journal Articles

Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content

K. Köhler, S. Müller, P. Waltereit, W. Pletschen, V. Polyakov, T. Lim, L. Kirste, H. P. Menner, P. Brückner, O. Ambacher, C. Buchheim, R. Goldhahn
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 053705 (2011)
https://doi.org/10.1063/1.3553866
Published: March 2011
View article titled, Electrical properties of Al<sub>x</sub>Ga<sub>1-x</sub>N/GaN heterostructures with low Al content
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Journal Articles

Experimental demonstration of efficient pulsed terahertz emission from a stacked GaAs/AlGaAs p - i - n - i heterostructure

A. Lisauskas, A. Reklaitis, R. Venckevičius, I. Kašalynas, G. Valušis, G. Grigaliūnaitė–Vonsevičienė, H. Maestre, J. Schmidt, V. Blank, M. D. Thomson, H. G. Roskos, K. Köhler
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 091103 (2011)
https://doi.org/10.1063/1.3561642
Published: March 2011
View article titled, Experimental demonstration of efficient pulsed terahertz emission from a stacked GaAs/AlGaAs p - i - n - i heterostructure
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Journal Articles

Impact of Al content on transport properties of two-dimensional electron gas in GaN / Al x Ga 1 − x N / GaN heterostructures

V. M. Polyakov, V. Cimalla, V. Lebedev, K. Köhler, S. Müller, P. Waltereit, O. Ambacher
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 142112 (2010)
https://doi.org/10.1063/1.3499656
Published: October 2010
View article titled, Impact of Al content on transport properties of two-dimensional electron gas in GaN / Al x Ga 1 − x N / GaN heterostructures
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Journal Articles

Influence of the surface potential on electrical properties of Al x Ga 1 − x N / GaN heterostructures with different Al-content: Effect of growth method

K. Köhler, S. Müller, R. Aidam, P. Waltereit, W. Pletschen, L. Kirste, H. P. Menner, W. Bronner, A. Leuther, R. Quay, M. Mikulla, O. Ambacher, R. Granzner, F. Schwierz, C. Buchheim, R. Goldhahn
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 053711 (2010)
https://doi.org/10.1063/1.3319585
Published: March 2010
View article titled, Influence of the surface potential on electrical properties of Al x Ga 1 − x N / GaN heterostructures with different Al-content: Effect of growth method
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Journal Articles

Rate equations analysis of external-cavity quantum cascade lasers

Q. K. Yang, B. Hinkov, F. Fuchs, W. Bronner, K. Köhler, J. Wagner, R. Maulini, J. Faist
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 043109 (2010)
https://doi.org/10.1063/1.3309764
Published: February 2010
View article titled, Rate equations analysis of external-cavity quantum cascade lasers
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Journal Articles

The Role of Gated and Ungated Plasma in THz Detection by Field Effect Transistors

M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, K. Köhler, G. Valušis, K. Gołaszewska, E. Kamińska, A. Piotrowska
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1199, 505–506 (2010)
https://doi.org/10.1063/1.3295529
Published: January 2010
View article titled, The Role of Gated and Ungated Plasma in THz Detection by Field Effect Transistors
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Journal Articles

Optical And Mass Spectrometric Investigation Of The Interaction Of Hydrogen With Nitrogen In (In)GaAsN Layers

H. Ch. Alt, P. Messerer, L. Kirste, K. Köhler, H. Riechert
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1199, 87–88 (2010)
https://doi.org/10.1063/1.3295567
Published: January 2010
View article titled, Optical And Mass Spectrometric Investigation Of The Interaction Of Hydrogen With Nitrogen In (In)GaAsN Layers
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Journal Articles

Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures

P. Waltereit, S. Müller, K. Bellmann, C. Buchheim, R. Goldhahn, K. Köhler, L. Kirste, M. Baeumler, M. Dammann, W. Bronner, R. Quay, O. Ambacher
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 023535 (2009)
https://doi.org/10.1063/1.3184348
Published: July 2009
View article titled, Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
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Journal Articles

Influence of doping profiles on coherent acoustic phonon detection and generation in semiconductors

F. Hudert, A. Bartels, T. Dekorsy, K. Köhler
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 123509 (2008)
https://doi.org/10.1063/1.3033140
Published: December 2008
View article titled, Influence of doping profiles on coherent acoustic phonon detection and generation in semiconductors
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Journal Articles

Terahertz detection by two dimensional plasma field effect transistors in quantizing magnetic fields

M. Sakowicz, J. Łusakowski, K. Karpierz, M. Grynberg, W. Knap, K. Köhler, G. Valušis, K. Gołaszewska, E. Kamińska, A. Piotrowska
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 203509 (2008)
https://doi.org/10.1063/1.2930682
Published: May 2008
View article titled, Terahertz detection by two dimensional plasma field effect transistors in quantizing magnetic fields
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Journal Articles

Band anticrossing in diluted Al x Ga 1 − x As 1 − y N y   ( x ⩽ 0.37 , y ⩽ 0.04 )

S. Procz, M. Fiederle, M. Kunzer, K. Köhler, J. Wagner
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 073103 (2008)
https://doi.org/10.1063/1.2895002
Published: April 2008
View article titled, Band anticrossing in diluted Al x Ga 1 − x As 1 − y N y   ( x ⩽ 0.37 , y ⩽ 0.04 )
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